We study the existence and stability of dark-gap solitons in linear lattice and nonlinear lattices.The results indicate that the combination of linear and nonlinear lattices gives dark-gap solitons unique properties.T...We study the existence and stability of dark-gap solitons in linear lattice and nonlinear lattices.The results indicate that the combination of linear and nonlinear lattices gives dark-gap solitons unique properties.The linear lattice can stabilize dark-gap solitons,while the nonlinear lattice reduces the stability of dark-gap solitons.On the basis of numerical analysis,we investigate the effects of lattice depth,chemical potential,nonlinear lattice amplitude,and nonlinear lattice period on the soliton in mixed lattices with the same and different periods.The stability of dark-gap soliton is studied carefully by means of real-time evolution and linear stability analysis.Dark-gap solitons can exist stably in the band gap,but the solitons formed by the mixed lattices are slightly different when the period is the same or different.展开更多
针对薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display,TFT-LCD)边缘亮度偏低、出现暗带的不良现象,对不良机理及影响因子进行研究,并总结较优工艺条件。实验结果表明从液晶面板设计角度,均匀的边缘盒厚有助于提升边...针对薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display,TFT-LCD)边缘亮度偏低、出现暗带的不良现象,对不良机理及影响因子进行研究,并总结较优工艺条件。实验结果表明从液晶面板设计角度,均匀的边缘盒厚有助于提升边缘亮度均一性,故适中的液晶量、硅球尺寸、硅球掺杂比及较硬的封框胶其性能更优,同时贴附偏光片后的液晶面板越平坦其暗带程度越轻;从背光源角度,模组成品的边缘暗带不良与背光源批次存在强相关性,但主要受背光源的平坦度等尺寸参数影响而非背光源自身的暗带程度。此外,老化工艺释放了背光源与液晶屏组装时产生的内应力,缓和边缘位置的形变,适当延长老化时间有利于降低边缘暗带不良发生率。通过以上较优条件的导入,成功改善了TFT-LCD显示器边缘暗带不良,有效地提升了产品竞争力。展开更多
Condense matter methods and mathematical models used in solving problems in solid state physics are transformed to high energy quantum cosmology in order to estimate the magnitude of the missing dark energy of the uni...Condense matter methods and mathematical models used in solving problems in solid state physics are transformed to high energy quantum cosmology in order to estimate the magnitude of the missing dark energy of the universe. Looking at the problem from this novel viewpoint was rewarded by a rather unexpected result, namely that the gap labelling method of integrated density of states for three dimensional icosahedral quasicrystals is identical to the previously measured and theoretically concluded ordinary energy density of the universe, namely a mere 4.5 percent of Einstein’s energy density, i.e. E(O) = mc2/22 where E is the energy, m is the mass and c is the speed of light. Consequently we conclude that the missing dark energy density must be E(D) = 1 - E(O) = mc2(21/22) in agreement with all known cosmological measurements and observations. This result could also be interpreted as a strong evidence for the self similarity of the geometry of spacetime, which is an expression of its basic fractal nature.展开更多
A series of Si-rich amorphous silicon carbide （a-SiC：H） thin films were deposited in conventional plasma enhanced chemical vapor deposition system with various gas ratio R = [CH4]/[SiH4]. The microstructural, optic...A series of Si-rich amorphous silicon carbide （a-SiC：H） thin films were deposited in conventional plasma enhanced chemical vapor deposition system with various gas ratio R = [CH4]/[SiH4]. The microstructural, optical and electronic properties of as-deposited films were investigated in this study. It was found that optical band gap was linearly proportional to carbon content in the films and it could be controlled in a range of 1.8-2.4 eV by changing the gas ratio, R. Both dark and photo conductivities in room temperature were decreased with the increasing of carbon content in the films, and the photosensitivity reached as high as 104 for the film with the optical band gap of 1.96 eV. The as-deposited samples were subsequently annealed at the temperatures of 900℃ and 1000℃. The formation of nanocrystalline silicon （nc- Si） dots in amorphous silicon carbide （a-SiC） host matrix was shown. The dark conductivity was enhanced by five orders of magnitude after annealing compared with that of as-deposited films. The result of temperature-dependent conductivity suggested that the property of carrier transport was dominated by conduction process between the extended states. Furthermore, room temperature electroluminescence （EL） was achieved from nc-Si/SiC system and the possible mechanism of radiative recombination mechanism was discussed.展开更多
基金supported by the Innovation Capability Improvement Project of Hebei Province,China(Grant No.22567605H).
文摘We study the existence and stability of dark-gap solitons in linear lattice and nonlinear lattices.The results indicate that the combination of linear and nonlinear lattices gives dark-gap solitons unique properties.The linear lattice can stabilize dark-gap solitons,while the nonlinear lattice reduces the stability of dark-gap solitons.On the basis of numerical analysis,we investigate the effects of lattice depth,chemical potential,nonlinear lattice amplitude,and nonlinear lattice period on the soliton in mixed lattices with the same and different periods.The stability of dark-gap soliton is studied carefully by means of real-time evolution and linear stability analysis.Dark-gap solitons can exist stably in the band gap,but the solitons formed by the mixed lattices are slightly different when the period is the same or different.
文摘针对薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display,TFT-LCD)边缘亮度偏低、出现暗带的不良现象,对不良机理及影响因子进行研究,并总结较优工艺条件。实验结果表明从液晶面板设计角度,均匀的边缘盒厚有助于提升边缘亮度均一性,故适中的液晶量、硅球尺寸、硅球掺杂比及较硬的封框胶其性能更优,同时贴附偏光片后的液晶面板越平坦其暗带程度越轻;从背光源角度,模组成品的边缘暗带不良与背光源批次存在强相关性,但主要受背光源的平坦度等尺寸参数影响而非背光源自身的暗带程度。此外,老化工艺释放了背光源与液晶屏组装时产生的内应力,缓和边缘位置的形变,适当延长老化时间有利于降低边缘暗带不良发生率。通过以上较优条件的导入,成功改善了TFT-LCD显示器边缘暗带不良,有效地提升了产品竞争力。
文摘Condense matter methods and mathematical models used in solving problems in solid state physics are transformed to high energy quantum cosmology in order to estimate the magnitude of the missing dark energy of the universe. Looking at the problem from this novel viewpoint was rewarded by a rather unexpected result, namely that the gap labelling method of integrated density of states for three dimensional icosahedral quasicrystals is identical to the previously measured and theoretically concluded ordinary energy density of the universe, namely a mere 4.5 percent of Einstein’s energy density, i.e. E(O) = mc2/22 where E is the energy, m is the mass and c is the speed of light. Consequently we conclude that the missing dark energy density must be E(D) = 1 - E(O) = mc2(21/22) in agreement with all known cosmological measurements and observations. This result could also be interpreted as a strong evidence for the self similarity of the geometry of spacetime, which is an expression of its basic fractal nature.
基金Acknowledgements This work was supported by National Natural Science Foundation of China （Grant No. 61036001）, the National Science Foundation of Jiangsu province （No. BK2010010） and the Fundamental Research Funds for the Central Universities （No. 1112021001）.
文摘A series of Si-rich amorphous silicon carbide （a-SiC：H） thin films were deposited in conventional plasma enhanced chemical vapor deposition system with various gas ratio R = [CH4]/[SiH4]. The microstructural, optical and electronic properties of as-deposited films were investigated in this study. It was found that optical band gap was linearly proportional to carbon content in the films and it could be controlled in a range of 1.8-2.4 eV by changing the gas ratio, R. Both dark and photo conductivities in room temperature were decreased with the increasing of carbon content in the films, and the photosensitivity reached as high as 104 for the film with the optical band gap of 1.96 eV. The as-deposited samples were subsequently annealed at the temperatures of 900℃ and 1000℃. The formation of nanocrystalline silicon （nc- Si） dots in amorphous silicon carbide （a-SiC） host matrix was shown. The dark conductivity was enhanced by five orders of magnitude after annealing compared with that of as-deposited films. The result of temperature-dependent conductivity suggested that the property of carrier transport was dominated by conduction process between the extended states. Furthermore, room temperature electroluminescence （EL） was achieved from nc-Si/SiC system and the possible mechanism of radiative recombination mechanism was discussed.
