A high-sensitivity,low-noise single photon avalanche diode(SPAD)detector was presented based on a 180 nm BCD process.The proposed device utilizes a p-implant layer/high-voltage n-well(HVNW)junction to form a deep aval...A high-sensitivity,low-noise single photon avalanche diode(SPAD)detector was presented based on a 180 nm BCD process.The proposed device utilizes a p-implant layer/high-voltage n-well(HVNW)junction to form a deep avalanche multiplication region for near-infrared(NIR)sensitivity enhancement.By optimizing the device size and electric field of the guard ring,the fill factor(FF)is significantly improved,further increasing photon detection efficiency(PDE).To solve the dark noise caused by the increasing active diameter,a field polysilicon gate structure connected to the p+anode was investigated,effectively suppressing dark count noise by 76.6%.It is experimentally shown that when the active diameter increases from 5 to 10μm,the FF is significantly improved from 20.7%to 39.1%,and thus the peak PDE also rises from 13.3%to 25.8%.At an excess bias voltage of 5 V,a NIR photon detection probability(PDP)of 6.8%at 905 nm,a dark count rate(DCR)of 2.12 cps/μm^(2),an afterpulsing probability(AP)of 1.2%,and a timing jitter of 216 ps are achieved,demonstrating excellent single photon detection performance.展开更多
This paper proposes two optimal designs of single photon avalanche diodes(SPADs) minimizing dark count rate(DCR). The first structure is introduced as p^+/pwell/nwell, in which a specific shallow pwell layer is added ...This paper proposes two optimal designs of single photon avalanche diodes(SPADs) minimizing dark count rate(DCR). The first structure is introduced as p^+/pwell/nwell, in which a specific shallow pwell layer is added between p^+and nwell layers to decrease the electric field below a certain threshold. The simulation results show on average 19.7%and 8.5% reduction of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. Moreover, a new structure is introduced as n+/nwell/pwell, in which a specific shallow nwell layer is added between n+and pwell layers to lower the electric field below a certain threshold. The simulation results show on average 29.2% and 5.5% decrement of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. It is shown that in higher excess biases(about 6 volts), the n+/nwell/pwell structure is proper to be integrated as digital silicon photomultiplier(dSiPM) due to low DCR. On the other hand, the p^+/pwell/nwell structure is appropriate to be utilized in dSiPM in high temperatures(above 50?C) due to lower DCR value.展开更多
The dark count is one of the key physical issues for superconducting nanowire single-photon detectors(SNSPDs)that limits various applications for optical quantum information and classical optics.When the bias current ...The dark count is one of the key physical issues for superconducting nanowire single-photon detectors(SNSPDs)that limits various applications for optical quantum information and classical optics.When the bias current approaches the switching current of SNSPDs,the dark count is actually dominated by the intrinsic dark counts(iDCs).However,the origin of iDCs and its relation to constrictions remains unclear for practical SNSPDs.We herein systematically characterize the iDCs of the SNSPDs with and without artificial geometric constrictions by applying the differential readout method.For these devices with constrictions,we have observed distinct Gaussian distributions in the temporal distribution of iDCs,in which the time difference between the distributions is consistent with the geometric distance between constrictions,and the rates of iDCs produced by each constriction are in good agreement with constrictions'widths.With respect to practical SNSPDs,surprisingly,we also observe several Gaussian distributions in the temporal domain and it shows no significant dependence on the devices’sizes,demonstrating that the iDCs of SNSPDs are mainly dominated by a few specific constrictions.展开更多
Conventional superconducting nanowire single-photon detectors(SNSPDs)have been typically limited in their applications due to their size,weight,and power consumption,which confine their use to laboratory settings.Howe...Conventional superconducting nanowire single-photon detectors(SNSPDs)have been typically limited in their applications due to their size,weight,and power consumption,which confine their use to laboratory settings.However,with the rapid development of remote imaging,sensing technologies,and long-range quantum communication with fewer topographical constraints,the demand for high-efficiency single-photon detectors integrated with avionic platforms is rapidly growing.We herein designed and manufactured the first drone-based SNSPD system with a system detection efficiency(SDE)as high as 91.8%.This drone-based system incorporates high-performance NbTiN SNSPDs,a self-developed miniature liquid helium dewar,and custom-built integrated electrical setups,making it capable of being launched in complex topographical conditions.Such a drone-based SNSPD system may open the use of SNSPDs for applications that demand high SDE in complex environments.展开更多
A near-infrared(NIR) enhanced silicon single-photon avalanche diode(SPAD) detector is proposed using 0.18 μm bipolar-CMOS-DMOS technology. It is based on a deep multiplication region, formed by a junction between the...A near-infrared(NIR) enhanced silicon single-photon avalanche diode(SPAD) detector is proposed using 0.18 μm bipolar-CMOS-DMOS technology. It is based on a deep multiplication region, formed by a junction between the highvoltage P-well(HVPW) and high-voltage buried N+ layer, to enhance the NIR photon detection probability(PDP). Thanks to the lightly doped P-type epitaxial layer, the electric field in the guard ring is reduced and premature breakdown is prevented. In particular, an extra P-type implantation layer(PIL) is added to the HVPW to reduce the breakdown voltage and enhance the device's sensitivity. Further research on the impact of different PIL sizes on the device performance is carried out. It is experimentally shown that at an excess bias voltage of 5 V, the optimized SPAD achieves a dark count rate of 0.64 cps/μm^(2), peak PDP of 54.8% at 555 nm and PDP of 10.53% at 905 nm. The full width at half-maximum of the timing jitter is 285 ps, and the afterpulsing probability is lower than 1.17%. This novel device provides a practical, low-cost solution for high-performance NIR time-of-flight detectors and 3D imaging sensors.展开更多
通过实验比较研究了基于SNSPD与SPAD探测器的激光测距系统.实验中,当接收回波端衰减120 d B时,天空光背景可忽略,基于SPAD的激光测距系统探测概率低于0.2%,而基于SNSPD的激光测距系统探测概率达35%;当激光发射频率低于1 k Hz,基于SNSPD...通过实验比较研究了基于SNSPD与SPAD探测器的激光测距系统.实验中,当接收回波端衰减120 d B时,天空光背景可忽略,基于SPAD的激光测距系统探测概率低于0.2%,而基于SNSPD的激光测距系统探测概率达35%;当激光发射频率低于1 k Hz,基于SNSPD的激光测距系统探测概率比SPAD高60%以上.研究表明:在探测弱信号回波光子时,SNSPD的探测性能远远优于SPAD,其原因是SNSPD具有较低的暗计数和高探测概率.与此同时,在接收端无衰减情况下,天空光背景会带来暗计数,影响测距系统信噪比.通过仿真分析表明,当背景亮度L0高于30 W/(m^2·sr)时,该基于SNSPD的激光测距系统的信噪比低于6,可能影响测距系统稳定探测.展开更多
针对现有单光子探测器模块价格昂贵和体积大的不足,设计了基于In Ga As/In P雪崩光电二极管(APD)的便携式单光子探测器,给出了探测器温控模块和偏置电压源的设计电路,门控信号的产生和雪崩信号的提取由FPGA完成。实验结果表明:在200 MH...针对现有单光子探测器模块价格昂贵和体积大的不足,设计了基于In Ga As/In P雪崩光电二极管(APD)的便携式单光子探测器,给出了探测器温控模块和偏置电压源的设计电路,门控信号的产生和雪崩信号的提取由FPGA完成。实验结果表明:在200 MHz门控条件且制冷温度为-55℃时,探测器的最大光子探测效率(PDE)约为16%,当探测效率为12%时,暗计数率(DCR)约为8.2×10-6/ns。展开更多
基金supported by the National Natural Science Foundation of China under Grant 62171233the Natural Science Foundation of China,Jiangsu Province under Grant BK20241891the Jiangsu Province Graduate Research and Practice Innovation Plan under Grants SJCX24_0313 and KYCX24_1169。
文摘A high-sensitivity,low-noise single photon avalanche diode(SPAD)detector was presented based on a 180 nm BCD process.The proposed device utilizes a p-implant layer/high-voltage n-well(HVNW)junction to form a deep avalanche multiplication region for near-infrared(NIR)sensitivity enhancement.By optimizing the device size and electric field of the guard ring,the fill factor(FF)is significantly improved,further increasing photon detection efficiency(PDE).To solve the dark noise caused by the increasing active diameter,a field polysilicon gate structure connected to the p+anode was investigated,effectively suppressing dark count noise by 76.6%.It is experimentally shown that when the active diameter increases from 5 to 10μm,the FF is significantly improved from 20.7%to 39.1%,and thus the peak PDE also rises from 13.3%to 25.8%.At an excess bias voltage of 5 V,a NIR photon detection probability(PDP)of 6.8%at 905 nm,a dark count rate(DCR)of 2.12 cps/μm^(2),an afterpulsing probability(AP)of 1.2%,and a timing jitter of 216 ps are achieved,demonstrating excellent single photon detection performance.
文摘This paper proposes two optimal designs of single photon avalanche diodes(SPADs) minimizing dark count rate(DCR). The first structure is introduced as p^+/pwell/nwell, in which a specific shallow pwell layer is added between p^+and nwell layers to decrease the electric field below a certain threshold. The simulation results show on average 19.7%and 8.5% reduction of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. Moreover, a new structure is introduced as n+/nwell/pwell, in which a specific shallow nwell layer is added between n+and pwell layers to lower the electric field below a certain threshold. The simulation results show on average 29.2% and 5.5% decrement of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. It is shown that in higher excess biases(about 6 volts), the n+/nwell/pwell structure is proper to be integrated as digital silicon photomultiplier(dSiPM) due to low DCR. On the other hand, the p^+/pwell/nwell structure is appropriate to be utilized in dSiPM in high temperatures(above 50?C) due to lower DCR value.
基金the National Key R&D Program of China(2017YFA0304000)National Natural Science Foundation of China(Grant Nos.61971408 and 61827823)+2 种基金Shanghai Municipal Science and Technology Major Project(2019SHZDZX01)Shanghai Rising-Star Program(20QA1410900)the Youth Innovation Promotion Association of Chinese Academy of Sciences(2020241,2021230).
文摘The dark count is one of the key physical issues for superconducting nanowire single-photon detectors(SNSPDs)that limits various applications for optical quantum information and classical optics.When the bias current approaches the switching current of SNSPDs,the dark count is actually dominated by the intrinsic dark counts(iDCs).However,the origin of iDCs and its relation to constrictions remains unclear for practical SNSPDs.We herein systematically characterize the iDCs of the SNSPDs with and without artificial geometric constrictions by applying the differential readout method.For these devices with constrictions,we have observed distinct Gaussian distributions in the temporal distribution of iDCs,in which the time difference between the distributions is consistent with the geometric distance between constrictions,and the rates of iDCs produced by each constriction are in good agreement with constrictions'widths.With respect to practical SNSPDs,surprisingly,we also observe several Gaussian distributions in the temporal domain and it shows no significant dependence on the devices’sizes,demonstrating that the iDCs of SNSPDs are mainly dominated by a few specific constrictions.
基金the Innovation Program for Quantum Science and Technology(Grant No.2023ZD0300100)the National Key Research and Development Program of China(Grant Nos.2023YFB3809600 and 2023YFC3007801)+1 种基金the National Natural Science Foundation of China(Grant Nos.62301543 and U24A20320)the Shanghai Sailing Program(Grant No.21YF1455700).
文摘Conventional superconducting nanowire single-photon detectors(SNSPDs)have been typically limited in their applications due to their size,weight,and power consumption,which confine their use to laboratory settings.However,with the rapid development of remote imaging,sensing technologies,and long-range quantum communication with fewer topographical constraints,the demand for high-efficiency single-photon detectors integrated with avionic platforms is rapidly growing.We herein designed and manufactured the first drone-based SNSPD system with a system detection efficiency(SDE)as high as 91.8%.This drone-based system incorporates high-performance NbTiN SNSPDs,a self-developed miniature liquid helium dewar,and custom-built integrated electrical setups,making it capable of being launched in complex topographical conditions.Such a drone-based SNSPD system may open the use of SNSPDs for applications that demand high SDE in complex environments.
基金Project supported by the National Natural Science Foundation of China (Grant No. 62171233)the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20241891)the Jiangsu Province Postgraduate Innovation Program (Grant No. KYCX23_0999)。
文摘A near-infrared(NIR) enhanced silicon single-photon avalanche diode(SPAD) detector is proposed using 0.18 μm bipolar-CMOS-DMOS technology. It is based on a deep multiplication region, formed by a junction between the highvoltage P-well(HVPW) and high-voltage buried N+ layer, to enhance the NIR photon detection probability(PDP). Thanks to the lightly doped P-type epitaxial layer, the electric field in the guard ring is reduced and premature breakdown is prevented. In particular, an extra P-type implantation layer(PIL) is added to the HVPW to reduce the breakdown voltage and enhance the device's sensitivity. Further research on the impact of different PIL sizes on the device performance is carried out. It is experimentally shown that at an excess bias voltage of 5 V, the optimized SPAD achieves a dark count rate of 0.64 cps/μm^(2), peak PDP of 54.8% at 555 nm and PDP of 10.53% at 905 nm. The full width at half-maximum of the timing jitter is 285 ps, and the afterpulsing probability is lower than 1.17%. This novel device provides a practical, low-cost solution for high-performance NIR time-of-flight detectors and 3D imaging sensors.
文摘通过实验比较研究了基于SNSPD与SPAD探测器的激光测距系统.实验中,当接收回波端衰减120 d B时,天空光背景可忽略,基于SPAD的激光测距系统探测概率低于0.2%,而基于SNSPD的激光测距系统探测概率达35%;当激光发射频率低于1 k Hz,基于SNSPD的激光测距系统探测概率比SPAD高60%以上.研究表明:在探测弱信号回波光子时,SNSPD的探测性能远远优于SPAD,其原因是SNSPD具有较低的暗计数和高探测概率.与此同时,在接收端无衰减情况下,天空光背景会带来暗计数,影响测距系统信噪比.通过仿真分析表明,当背景亮度L0高于30 W/(m^2·sr)时,该基于SNSPD的激光测距系统的信噪比低于6,可能影响测距系统稳定探测.
文摘针对现有单光子探测器模块价格昂贵和体积大的不足,设计了基于In Ga As/In P雪崩光电二极管(APD)的便携式单光子探测器,给出了探测器温控模块和偏置电压源的设计电路,门控信号的产生和雪崩信号的提取由FPGA完成。实验结果表明:在200 MHz门控条件且制冷温度为-55℃时,探测器的最大光子探测效率(PDE)约为16%,当探测效率为12%时,暗计数率(DCR)约为8.2×10-6/ns。
