Low-cost and large-area uniform amorphous Ga_(2)O_(3)(α-Ga_(2)O_(3))solar-blind ultraviolet(UV)detectors have garnered significant attention in recent years.Oxygen vacancy(VO)defects are generally considered as the p...Low-cost and large-area uniform amorphous Ga_(2)O_(3)(α-Ga_(2)O_(3))solar-blind ultraviolet(UV)detectors have garnered significant attention in recent years.Oxygen vacancy(VO)defects are generally considered as the predominant defects affecting the detector performance.Reducing VOconcentration generally results in both low dark current and low photo current,significantly limiting further improvement of the photo-to-dark current ratio(PDCR)parameter.Herein,a delicately optimized atomic layer deposition(ALD)method is revealed having the capability to break through the trade-off in a-Ga_(2)O_(3),achieving both low dark current and high photocurrent simultaneously.For a clear demonstration,a-Ga_(2)O_(3)contrast sample is prepared by magnetron sputtering and compared as well.Combined tests are performed including xray photoelectron spectroscopy,photoluminescence,electron paramagnetic resonance and Fourier-transform infrared spectroscopy.It is found that ALDα-Ga_(2)O_(3)has a lower VOconcentration,but also a lower dangling bonds concentration which are strong non-irradiation recombination centers.Therefore,decrease of dangling bonds is suggested to compensate for the low optical gain induced by low VOconcentration and promote the PDCR to~2.06×10^(6).Our findings firstly prove that the dangling bonds also play an important role in determining the a-Ga_(2)O_(3)detection performance,offering new insights for further promotion ofα-Ga_(2)O_(3)UV detector performance via dual optimization of dangling bonds and VO.展开更多
We have investigated the effect of surface dangling bonds and molecular passivation on the doping of GaAs nanowires by first-principles calculations. Results show that the positively charged surface dangling bond on G...We have investigated the effect of surface dangling bonds and molecular passivation on the doping of GaAs nanowires by first-principles calculations. Results show that the positively charged surface dangling bond on Ga atom is the most stable defect for both ultrathin and large size GaAs nanowires. It can form the trap centers of holes and then prefer to capture the holes from p-type doping. Thus it could obviously reduce the efficiency of the p-type doping. We also found that the NO2 molecule is electronegative enough to capture the unpaired electrons of surface dangling bonds, which is an ideal passivation material for the Zn-doped GaAs nanowires.展开更多
Though GaN nanoribbons （GaNNRs） with H atoms terminating both edges are nonmagnetic semiconductors, the extra dangling bond bands around the Fermi level lead to a transition from semiconducting to metallic, except f...Though GaN nanoribbons （GaNNRs） with H atoms terminating both edges are nonmagnetic semiconductors, the extra dangling bond bands around the Fermi level lead to a transition from semiconducting to metallic, except for the armchair edge GaNNRs （AGaNNRs） with bare N and Ga edges, which are still nonmagnetic semiconductors due to the strong coupling of the dangling bonds of dimeric N and Ga atoms at the same edge. The larger difference in the charge density （pUp_pdown） for edge bare N atoms and decaying for N sub-lattices away from the edge, as well as the smaller difference in the charge density for edge bare Ga atoms and without decaying for Ga sub-lattices away from the edge is consistent with the magnetic moment of a GaNNR with bare N edge being larger than that of a GaNNR with bare Ga edge. The magnetic moment of a zigzag edge GaNNR （ZGaNNR） with bare N （Ga） edge has nearly half the value of the magnetic moment of a AGaNNR with bare N （Ga） edge. Such a relationship also exists in the number of extra dangling bond states appearing around the Fermi level in the band structures. For ZGaNNRs, the magnetic moment of bare N and Ga edges is larger than either bare N edge or bare Ga edge, but smaller than their sum, implying that there exists an interaction between the dangling bonds at both edges of bare N and Ga edges.展开更多
The lead-free inorganic perovskite CsSnI_(3) is considered as one of the best candidates for emerging photovoltaics.Nevertheless,CsSnI_(3)-based perovskite solar cells experience a significant drop in performance due ...The lead-free inorganic perovskite CsSnI_(3) is considered as one of the best candidates for emerging photovoltaics.Nevertheless,CsSnI_(3)-based perovskite solar cells experience a significant drop in performance due to the nonradiative recombination facilitated by trapping.Here,we show an electron donor passivation method to regulate deep-level defects for CsSnI_(3) perovskite with electron donor pyrrole.Experimental observations combined with theoretical simulations verify that the saturation of Tin dangling bonds with pyrrole on the CsSnI_(3) surface via a Lewis acid-base addition reaction can significantly reduce the density of deep-level defects.Consequently,the printable mesoporous perovskite solar cells with an FTO/compact-TiO_(2)/mesoporous-TiO_(2)/Al_(2)O_(3)/NiO/carbon framework device structure penetrated with CsSnI_(3) achieve a power conversion efficiency of up to 10.11%.To our knowledge,this represents the highest efficiency reported to date for lead-free pero vs kite-based printable mesoporous solar cells.Furthermore,the unencapsulated devices demonstrated remarkable long-term stability,retaining 92%of their initial efficiency even after 2400 h of aging in a nitrogen atmosphere.展开更多
The self-activated (SA) luminescence in ZnS nanoparticles was studied by comparing the UV-light irradiation induced spectral change, Raman spectra, and EPR spectra of the un-rinsed and rinsed samples. The results show...The self-activated (SA) luminescence in ZnS nanoparticles was studied by comparing the UV-light irradiation induced spectral change, Raman spectra, and EPR spectra of the un-rinsed and rinsed samples. The results show that the SA centers prefer to occupy the sites near the surface and that the donor of SA emission may be related to organic functional groups such as -OH, -CH 3, and -COO. The EPR signals are enhanced remarkably in the rinsed nanoparticles comparing with that in the un-rinsed ones. It is believed that organic functional groups physically combine with the surface dangling bonds of ZnS nanoparticles, leading the nonradiative transition channels to decrease, and thus the SA emission to increase.展开更多
Based on the empirical electron surface model （EESM）,the covalent electron density of dangling bonds （CEDDB） was calculated for various crystal planes of gold,and the surface energy was calculated further.Calculat...Based on the empirical electron surface model （EESM）,the covalent electron density of dangling bonds （CEDDB） was calculated for various crystal planes of gold,and the surface energy was calculated further.Calculation results show that CEDDB has a great influence on the surface energy of various index surfaces and the anisotropy of the surface.The calculated surface energy is in agreement with experimental and other theoretical values.The calculated surface energy of the close-packed （111） surface has the lowest surface energy,which agrees with the theoretical prediction.Also,it is found that the spatial distribution of covalent bonds has a great influence on the surface energy of various index surfaces.Therefore,CEDDB should be a suitable parameter to describe and quantify the dangling bonds and surface energy of various crystal surfaces.展开更多
6H-SiC is an important semiconductor material. The 6H-SiC wafer is always exposed to a high-humidity environment and the effect from the absorbed water molecule and some relative adsorbates is not negligible. Here, th...6H-SiC is an important semiconductor material. The 6H-SiC wafer is always exposed to a high-humidity environment and the effect from the absorbed water molecule and some relative adsorbates is not negligible. Here, the oxygen and water molecules absorbed on the 6H-SiC(0001) surface and the dissociation process were studied with density functional theory. On the 6H-SiC(0001) surface, absorbed O2 is spontaneously dissociated into O*, which is absorbed on a hollow site, and further transforms the 6H-SiC(0001) surface into SiO2. The absorbed H2O is spontaneously broken into OH*and H*, which are both absorbed on the top of the Si atom, and OH* is further reversibly transformed into O* and H*. The H* could saturate the dangling Si bond and change the absorption type of O*, which could stabilize the 6H-SiC(0001) surface and prevent it from transforming into SiO2.展开更多
Photoluminescence （PL） spectra of Si nanocrystals （NCs） prepared by 130 keV Si ions implantation onto SiO2 matrix were investigated as a function of annealing temperature and implanted ion dose. PL spectra consist...Photoluminescence （PL） spectra of Si nanocrystals （NCs） prepared by 130 keV Si ions implantation onto SiO2 matrix were investigated as a function of annealing temperature and implanted ion dose. PL spectra consist of two PL peaks, originated from smaller Si NCs due to quantum confinement effect （QCE） and the interface states located at the surface of larger Si NCs. The evolution of number of dangling bonds （DBs） on Si NCs was also investigated. For bydrogen-passivated samples, a monotonic increase in PL peak intensity with the dose of implanted Si ions up to 3× 10^17 ions/cm^2 is observed. The number of DBs on individual Si NC, the interaction between DBs at the surface of neighbouring Si NCs and their effects on the efficiency of PL are discussed.展开更多
This paper uses a molecular static approach with a many-body potential to investigate the surface energetic and bonding characteristics of tetrahexahedral platinum nanocrystals enclosed by high-index facets such as {2...This paper uses a molecular static approach with a many-body potential to investigate the surface energetic and bonding characteristics of tetrahexahedral platinum nanocrystals enclosed by high-index facets such as {210}, {310}, {410}, {520} and {730}. It mainly focuses on the effect of crystal size and surface Miller index on these characteristics. The results show that the surface energy and dangling bond density increase with decreasing diameter of tetrahexahedral nanocrystals and generally show an order of {210} 〉{730}〉 {520} 〉 {310} 〉 {410}. However, this order is not valid at crystal sizes below 7 nm or so. The results of corresponding surfaces are also presented for comparison.展开更多
The properties of temperature dependence of conductivity σ of electron beam evaporated a-Si_(1-x)Gd_x films which was deposited on some substrates of glass and Al-foil at a substrate temperature of approximately 300...The properties of temperature dependence of conductivity σ of electron beam evaporated a-Si_(1-x)Gd_x films which was deposited on some substrates of glass and Al-foil at a substrate temperature of approximately 300℃ in a background pressure about 2×10^(-4) Pa with a deposition speed about 0.2 nm/s was analyzed and studied.The forms of Gd^(3+) ions in the films,the dangling bond compensation achieved by Gd^(3+) ions and the impurity states compensation achieved by structural disorder aroused by doping Gd ele- ment into a-Si film could be the key factors in resolving the properties of conduction in a-Si_(1-x)Gd_x films.In the temperature region of 290 K<T<500 K,an analysis of conductivity allows to reveal two conductivity regions:(1)conducting conduction of the carriers excited to conductive band,(2)hopping conduction of the carriers in the impurity band near E_F level thermo-excited.展开更多
Photoluminescence （PL） intensity of passivated silicon nanocrystals （Si NCs） embedded in a SiO2 matrix is com- pared with that of unpassivated Si NCs. We investigate the relative enhancement of PL intensity （IR）...Photoluminescence （PL） intensity of passivated silicon nanocrystals （Si NCs） embedded in a SiO2 matrix is com- pared with that of unpassivated Si NCs. We investigate the relative enhancement of PL intensity （IR） as a function of annealing temperature and implanted Si ion dose. The IR increases simultaneously with the annealing temperature. This demonstrates an increase in the number of dangling bonds （DBs） with the degree of Si crystallization varying via the annealing temperature. The increase in IR with implanted Si ion dose is also observed. We believe that the near-field interaction between DBs and neighboring Si NCs is an additional factor that reduces the PL efficiency of unpassivated Si NCs.展开更多
The defect properties of semiconductors,especially those at grain boundaries(GBs)in polycrystalline semiconductor films,significantly influence their optoelectronic properties and consequently the performance of corre...The defect properties of semiconductors,especially those at grain boundaries(GBs)in polycrystalline semiconductor films,significantly influence their optoelectronic properties and consequently the performance of corresponding optoelectronic devices.However,despite extensive studies on GB defect properties in three-dimensional(3D)and twodimensional(2D)semiconductors,research on GB defects in one-dimensional(1D)semiconductors remains unclear.Here,we report the intrinsic benign GB defect properties in 1D semiconductors,arising from their 1D crystal structure where no dangling bonds are present at GBs.Using the typical 1D optoelectronic material selenium(Se)as an example,we find that no defect states are introduced along the interchain direction of crystal planes through a combination of density of states and band structure calculations.We finally position the Kelvin probe force microscope probe on the cross-section of vertically oriented Se films to directly characterize the GB properties of polycrystalline Se films.We observe no significant changes in potential at the GBs,with the average plane potential difference being as low as approximately 10 mV,thus experimentally confirming the benign nature of GB defects in 1D materials.The combined theoretical and experimental results demonstrate the great potential of 1D semiconductors for optoelectronic applications.展开更多
The effect of Si （100） surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by （NH4）2S solution, which was attributed to physical adsorption of S at...The effect of Si （100） surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by （NH4）2S solution, which was attributed to physical adsorption of S atoms. SEM and XPS analyses reveal that Si surface atoms were chemically bonded with S atoms after Si surface treatment in NH4OH and （NH4）2S mixing solution. This induces a more ideal value for the Schottky barrier height compared with a diode treated only by HF solution, indicating that surface states originating from dangling bonds are passivated with S atoms.展开更多
Hydrogenated amorphous silicon(a-Si:H)has a long history in the development of photovoltaics,especially in the research field of a-Si:H thin-film solar cells and crystalline/amorphous silicon heterojunction solar cell...Hydrogenated amorphous silicon(a-Si:H)has a long history in the development of photovoltaics,especially in the research field of a-Si:H thin-film solar cells and crystalline/amorphous silicon heterojunction solar cells.More than 40 years ago,Staebler and Wronski reported conductance decrease of a-Si:H induced by light soaking.This phenomenon has been widely investigated for electronic applications.In contrast to that,we found light soaking can also improve dark conductance of a-Si:H when boron or phosphorus atoms are doped into the amorphous network.Here we survey these two photoelectronic effects,and discuss their implementations to silicon solar cells.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62404146,12174275,62174113)the Basic and Applied Basic Research Foundation of Guangdong Province,China(Grant Nos.2023A1515110730 and 2023A1515140094)the INTPART Program at the Research Council of Norway(Project number 322382)。
文摘Low-cost and large-area uniform amorphous Ga_(2)O_(3)(α-Ga_(2)O_(3))solar-blind ultraviolet(UV)detectors have garnered significant attention in recent years.Oxygen vacancy(VO)defects are generally considered as the predominant defects affecting the detector performance.Reducing VOconcentration generally results in both low dark current and low photo current,significantly limiting further improvement of the photo-to-dark current ratio(PDCR)parameter.Herein,a delicately optimized atomic layer deposition(ALD)method is revealed having the capability to break through the trade-off in a-Ga_(2)O_(3),achieving both low dark current and high photocurrent simultaneously.For a clear demonstration,a-Ga_(2)O_(3)contrast sample is prepared by magnetron sputtering and compared as well.Combined tests are performed including xray photoelectron spectroscopy,photoluminescence,electron paramagnetic resonance and Fourier-transform infrared spectroscopy.It is found that ALDα-Ga_(2)O_(3)has a lower VOconcentration,but also a lower dangling bonds concentration which are strong non-irradiation recombination centers.Therefore,decrease of dangling bonds is suggested to compensate for the low optical gain induced by low VOconcentration and promote the PDCR to~2.06×10^(6).Our findings firstly prove that the dangling bonds also play an important role in determining the a-Ga_(2)O_(3)detection performance,offering new insights for further promotion ofα-Ga_(2)O_(3)UV detector performance via dual optimization of dangling bonds and VO.
基金This work was supported by the National Basic Research Program of China （No.2010CB327600）, the National Natural Science Foundation of China （No.61020106007 and No.61376019）, the Natural Science Foundation of Beijing （No.4142038）, the Specialized Research Fund for the Doctoral Program of Higher Education （No.20120005110011）, and the 111 Program of China （No.B07005）. Jian-gong Cui would like to thank Dr. Xin Yan and Dr. Jun-shuai Li from Beijing University of Posts and Telecommunications for useful discussions.
文摘We have investigated the effect of surface dangling bonds and molecular passivation on the doping of GaAs nanowires by first-principles calculations. Results show that the positively charged surface dangling bond on Ga atom is the most stable defect for both ultrathin and large size GaAs nanowires. It can form the trap centers of holes and then prefer to capture the holes from p-type doping. Thus it could obviously reduce the efficiency of the p-type doping. We also found that the NO2 molecule is electronegative enough to capture the unpaired electrons of surface dangling bonds, which is an ideal passivation material for the Zn-doped GaAs nanowires.
基金supported by the National Natural Science Foundation of China (Grant Nos. 51071098 and 11104175)the State Key Development for Basic Research of China (Grant No. 2010CB631002)
文摘Though GaN nanoribbons （GaNNRs） with H atoms terminating both edges are nonmagnetic semiconductors, the extra dangling bond bands around the Fermi level lead to a transition from semiconducting to metallic, except for the armchair edge GaNNRs （AGaNNRs） with bare N and Ga edges, which are still nonmagnetic semiconductors due to the strong coupling of the dangling bonds of dimeric N and Ga atoms at the same edge. The larger difference in the charge density （pUp_pdown） for edge bare N atoms and decaying for N sub-lattices away from the edge, as well as the smaller difference in the charge density for edge bare Ga atoms and without decaying for Ga sub-lattices away from the edge is consistent with the magnetic moment of a GaNNR with bare N edge being larger than that of a GaNNR with bare Ga edge. The magnetic moment of a zigzag edge GaNNR （ZGaNNR） with bare N （Ga） edge has nearly half the value of the magnetic moment of a AGaNNR with bare N （Ga） edge. Such a relationship also exists in the number of extra dangling bond states appearing around the Fermi level in the band structures. For ZGaNNRs, the magnetic moment of bare N and Ga edges is larger than either bare N edge or bare Ga edge, but smaller than their sum, implying that there exists an interaction between the dangling bonds at both edges of bare N and Ga edges.
基金supported by the National Key Research and Development Program of China(2022YFB4200305)the National Natural Science Foundation of China(22379049)Hubei Provincial Key Research and Development Program(2023BAB113)。
文摘The lead-free inorganic perovskite CsSnI_(3) is considered as one of the best candidates for emerging photovoltaics.Nevertheless,CsSnI_(3)-based perovskite solar cells experience a significant drop in performance due to the nonradiative recombination facilitated by trapping.Here,we show an electron donor passivation method to regulate deep-level defects for CsSnI_(3) perovskite with electron donor pyrrole.Experimental observations combined with theoretical simulations verify that the saturation of Tin dangling bonds with pyrrole on the CsSnI_(3) surface via a Lewis acid-base addition reaction can significantly reduce the density of deep-level defects.Consequently,the printable mesoporous perovskite solar cells with an FTO/compact-TiO_(2)/mesoporous-TiO_(2)/Al_(2)O_(3)/NiO/carbon framework device structure penetrated with CsSnI_(3) achieve a power conversion efficiency of up to 10.11%.To our knowledge,this represents the highest efficiency reported to date for lead-free pero vs kite-based printable mesoporous solar cells.Furthermore,the unencapsulated devices demonstrated remarkable long-term stability,retaining 92%of their initial efficiency even after 2400 h of aging in a nitrogen atmosphere.
文摘The self-activated (SA) luminescence in ZnS nanoparticles was studied by comparing the UV-light irradiation induced spectral change, Raman spectra, and EPR spectra of the un-rinsed and rinsed samples. The results show that the SA centers prefer to occupy the sites near the surface and that the donor of SA emission may be related to organic functional groups such as -OH, -CH 3, and -COO. The EPR signals are enhanced remarkably in the rinsed nanoparticles comparing with that in the un-rinsed ones. It is believed that organic functional groups physically combine with the surface dangling bonds of ZnS nanoparticles, leading the nonradiative transition channels to decrease, and thus the SA emission to increase.
基金supported by the Beijing Natural Science Foundation,China (No.2072014)the Ph.D. Program Foundation of the Ministry of Education of China (No.200800100006)
文摘Based on the empirical electron surface model （EESM）,the covalent electron density of dangling bonds （CEDDB） was calculated for various crystal planes of gold,and the surface energy was calculated further.Calculation results show that CEDDB has a great influence on the surface energy of various index surfaces and the anisotropy of the surface.The calculated surface energy is in agreement with experimental and other theoretical values.The calculated surface energy of the close-packed （111） surface has the lowest surface energy,which agrees with the theoretical prediction.Also,it is found that the spatial distribution of covalent bonds has a great influence on the surface energy of various index surfaces.Therefore,CEDDB should be a suitable parameter to describe and quantify the dangling bonds and surface energy of various crystal surfaces.
基金supported by the Fundamental Research Project of Qinghai Province (2017-ZJ-795)
文摘6H-SiC is an important semiconductor material. The 6H-SiC wafer is always exposed to a high-humidity environment and the effect from the absorbed water molecule and some relative adsorbates is not negligible. Here, the oxygen and water molecules absorbed on the 6H-SiC(0001) surface and the dissociation process were studied with density functional theory. On the 6H-SiC(0001) surface, absorbed O2 is spontaneously dissociated into O*, which is absorbed on a hollow site, and further transforms the 6H-SiC(0001) surface into SiO2. The absorbed H2O is spontaneously broken into OH*and H*, which are both absorbed on the top of the Si atom, and OH* is further reversibly transformed into O* and H*. The H* could saturate the dangling Si bond and change the absorption type of O*, which could stabilize the 6H-SiC(0001) surface and prevent it from transforming into SiO2.
文摘Photoluminescence （PL） spectra of Si nanocrystals （NCs） prepared by 130 keV Si ions implantation onto SiO2 matrix were investigated as a function of annealing temperature and implanted ion dose. PL spectra consist of two PL peaks, originated from smaller Si NCs due to quantum confinement effect （QCE） and the interface states located at the surface of larger Si NCs. The evolution of number of dangling bonds （DBs） on Si NCs was also investigated. For bydrogen-passivated samples, a monotonic increase in PL peak intensity with the dose of implanted Si ions up to 3× 10^17 ions/cm^2 is observed. The number of DBs on individual Si NC, the interaction between DBs at the surface of neighbouring Si NCs and their effects on the efficiency of PL are discussed.
基金Project supported by the International Science & Technology Cooperation Project of China (Grant No 2007DFA40890)the National Natural Science Foundation of China (Grant Nos 10702056 and 10774124)the Program for New Century Excellent Talents in Fujian Province University, China
文摘This paper uses a molecular static approach with a many-body potential to investigate the surface energetic and bonding characteristics of tetrahexahedral platinum nanocrystals enclosed by high-index facets such as {210}, {310}, {410}, {520} and {730}. It mainly focuses on the effect of crystal size and surface Miller index on these characteristics. The results show that the surface energy and dangling bond density increase with decreasing diameter of tetrahexahedral nanocrystals and generally show an order of {210} 〉{730}〉 {520} 〉 {310} 〉 {410}. However, this order is not valid at crystal sizes below 7 nm or so. The results of corresponding surfaces are also presented for comparison.
文摘The properties of temperature dependence of conductivity σ of electron beam evaporated a-Si_(1-x)Gd_x films which was deposited on some substrates of glass and Al-foil at a substrate temperature of approximately 300℃ in a background pressure about 2×10^(-4) Pa with a deposition speed about 0.2 nm/s was analyzed and studied.The forms of Gd^(3+) ions in the films,the dangling bond compensation achieved by Gd^(3+) ions and the impurity states compensation achieved by structural disorder aroused by doping Gd ele- ment into a-Si film could be the key factors in resolving the properties of conduction in a-Si_(1-x)Gd_x films.In the temperature region of 290 K<T<500 K,an analysis of conductivity allows to reveal two conductivity regions:(1)conducting conduction of the carriers excited to conductive band,(2)hopping conduction of the carriers in the impurity band near E_F level thermo-excited.
基金Project supported by the State Key Laboratory of Nuclear Physics and Technology, China
文摘Photoluminescence （PL） intensity of passivated silicon nanocrystals （Si NCs） embedded in a SiO2 matrix is com- pared with that of unpassivated Si NCs. We investigate the relative enhancement of PL intensity （IR） as a function of annealing temperature and implanted Si ion dose. The IR increases simultaneously with the annealing temperature. This demonstrates an increase in the number of dangling bonds （DBs） with the degree of Si crystallization varying via the annealing temperature. The increase in IR with implanted Si ion dose is also observed. We believe that the near-field interaction between DBs and neighboring Si NCs is an additional factor that reduces the PL efficiency of unpassivated Si NCs.
基金supported by the National Natural Science Foundation of China(Nos.22375206 and 22269019)the Youth Innovation Promotion Association CAS(No.Y2021014)Hubei Key Laboratory of Polymer Materials,Hubei University.
文摘The defect properties of semiconductors,especially those at grain boundaries(GBs)in polycrystalline semiconductor films,significantly influence their optoelectronic properties and consequently the performance of corresponding optoelectronic devices.However,despite extensive studies on GB defect properties in three-dimensional(3D)and twodimensional(2D)semiconductors,research on GB defects in one-dimensional(1D)semiconductors remains unclear.Here,we report the intrinsic benign GB defect properties in 1D semiconductors,arising from their 1D crystal structure where no dangling bonds are present at GBs.Using the typical 1D optoelectronic material selenium(Se)as an example,we find that no defect states are introduced along the interchain direction of crystal planes through a combination of density of states and band structure calculations.We finally position the Kelvin probe force microscope probe on the cross-section of vertically oriented Se films to directly characterize the GB properties of polycrystalline Se films.We observe no significant changes in potential at the GBs,with the average plane potential difference being as low as approximately 10 mV,thus experimentally confirming the benign nature of GB defects in 1D materials.The combined theoretical and experimental results demonstrate the great potential of 1D semiconductors for optoelectronic applications.
基金supported by the State Key Development Program for Basic Research of China(No.2006CB302704)
文摘The effect of Si （100） surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by （NH4）2S solution, which was attributed to physical adsorption of S atoms. SEM and XPS analyses reveal that Si surface atoms were chemically bonded with S atoms after Si surface treatment in NH4OH and （NH4）2S mixing solution. This induces a more ideal value for the Schottky barrier height compared with a diode treated only by HF solution, indicating that surface states originating from dangling bonds are passivated with S atoms.
基金supports from National Natural Science Foundations of China(Nos.T2322028,62004208,62074153)Science and Technology Commission of Shanghai Municipality(No.22ZR1473200)+1 种基金Talent plan of Shanghai Branch,Chinese Academy of Sciences(No.CASSHB-QNPD-2023-001)Shanghai Rising-Star Program(No.23QA1411100).
文摘Hydrogenated amorphous silicon(a-Si:H)has a long history in the development of photovoltaics,especially in the research field of a-Si:H thin-film solar cells and crystalline/amorphous silicon heterojunction solar cells.More than 40 years ago,Staebler and Wronski reported conductance decrease of a-Si:H induced by light soaking.This phenomenon has been widely investigated for electronic applications.In contrast to that,we found light soaking can also improve dark conductance of a-Si:H when boron or phosphorus atoms are doped into the amorphous network.Here we survey these two photoelectronic effects,and discuss their implementations to silicon solar cells.
