The downscaling of logic devices has posed numerous engineering and manufacturing challenges in copper(Cu)interconnections.The primary failure modes of Cu filling defects are narrow top openings and discontinuous Cu s...The downscaling of logic devices has posed numerous engineering and manufacturing challenges in copper(Cu)interconnections.The primary failure modes of Cu filling defects are narrow top openings and discontinuous Cu seeds on sidewalls.This study investigates the influence and mechanism of layout on Cu filling defects.Dense line wires with uneven local layouts are prone to defects,which is attributed to the altered distribution of additives in electrochemical plating(ECP),leading to differences in bottom-up filling behavior.It is demonstrated that large-sized metal conductor regions adjacent to dense line wires adsorb substantial amounts of suppressor,resulting in sparse current density in these areas.Given the fixed total local current density,the sparseness of current density in adjacent regions inevitably diverts more current lines to the dense line wire areas.The excessive current density exceeds the local redistribution capacity of additives,causing premature sealing of trench tops and the formation of void defects.A low-current plating process significantly mitigates these defects but may compromise the protective capability of the Cu seed.Additionally,the perimeter density of the layout serves as an effective evaluation index.展开更多
Kerr frequency combs have been attracting significant interest due to their rich physics and broad applications in metrology,microwave photonics,and telecommunications.In this review,we first introduce the fundamental...Kerr frequency combs have been attracting significant interest due to their rich physics and broad applications in metrology,microwave photonics,and telecommunications.In this review,we first introduce the fundamental physics,master equations,simulation methods,and dynamic process of Kerr frequency combs.We then analyze the most promising material platform for realizing Kerr frequency combs—silicon nitride on insulator(SNOI)in comparison with other material platforms.Moreover,we discuss the fabrication methods,process optimization as well as tuning and measurement schemes of SNOI-based Kerr frequency combs.Furthermore,we highlight several emerging applications of Kerr frequency combs in metrology,including spectroscopy,ranging,and timing.Finally,we summarize this review and envision the future development of chip-scale Kerr frequency combs from the viewpoint of theory,material platforms,and tuning methods.展开更多
文摘The downscaling of logic devices has posed numerous engineering and manufacturing challenges in copper(Cu)interconnections.The primary failure modes of Cu filling defects are narrow top openings and discontinuous Cu seeds on sidewalls.This study investigates the influence and mechanism of layout on Cu filling defects.Dense line wires with uneven local layouts are prone to defects,which is attributed to the altered distribution of additives in electrochemical plating(ECP),leading to differences in bottom-up filling behavior.It is demonstrated that large-sized metal conductor regions adjacent to dense line wires adsorb substantial amounts of suppressor,resulting in sparse current density in these areas.Given the fixed total local current density,the sparseness of current density in adjacent regions inevitably diverts more current lines to the dense line wire areas.The excessive current density exceeds the local redistribution capacity of additives,causing premature sealing of trench tops and the formation of void defects.A low-current plating process significantly mitigates these defects but may compromise the protective capability of the Cu seed.Additionally,the perimeter density of the layout serves as an effective evaluation index.
基金the National Key Research and Development Program of China(2021YFA1401000,2021YFB2801600,and 2017YFF0206104)National Natural Science Foundation of China(62075114 and 62175121)the Beijing Natural Science Foundation(4212050)。
文摘Kerr frequency combs have been attracting significant interest due to their rich physics and broad applications in metrology,microwave photonics,and telecommunications.In this review,we first introduce the fundamental physics,master equations,simulation methods,and dynamic process of Kerr frequency combs.We then analyze the most promising material platform for realizing Kerr frequency combs—silicon nitride on insulator(SNOI)in comparison with other material platforms.Moreover,we discuss the fabrication methods,process optimization as well as tuning and measurement schemes of SNOI-based Kerr frequency combs.Furthermore,we highlight several emerging applications of Kerr frequency combs in metrology,including spectroscopy,ranging,and timing.Finally,we summarize this review and envision the future development of chip-scale Kerr frequency combs from the viewpoint of theory,material platforms,and tuning methods.
