The presence of a van Hove singularity(vHS)at the Fermi level can trigger magnetic instability by mediating a spontaneous transition from paramagnetic to magnetically ordered states.While electrostatic doping(typicall...The presence of a van Hove singularity(vHS)at the Fermi level can trigger magnetic instability by mediating a spontaneous transition from paramagnetic to magnetically ordered states.While electrostatic doping(typically achieved via ionic gating)to shift the vHS to the Fermi level provides a general mechanism for engineering such magnetism,its volatile nature often leads to the collapse of induced states upon gate field removal.Here,a novel scheme is presented for non-volatile magnetic control by utilizing ferroelectric heterostructures to achieve reversible magnetism switching.Using two-dimensional VSiN_(3),a nonmagnetic material with Mexican-hat electronic band dispersions hosting vHSs,as a prototype,it is preliminarily demonstrated that both electron and hole doping can robustly induce magnetism.Further,by interfacing VSiN_(3)with ferroelectric Sc_(2)CO_(2),reversible switching of its magnetic state via polarization-driven heterointerfacial charge transfer is achieved.This mechanism enables a dynamic transition between insulating and half-metallic phases in VSiN_(3),establishing a pathway to design multiferroic tunnel junctions with giant tunneling electroresistance or magnetoresistance.This work bridges non-volatile ferroelectric control with vHS-enhanced magnetism,opening opportunities for energy-efficient and high-performance spintronic devices and non-volatile memory devices.展开更多
Terahertz(THz)switches are essential components of THz communication systems.THz switches based on conventional waveguides and photonic crystal structures are sensitive to manufacturing defects and sharp bending,resul...Terahertz(THz)switches are essential components of THz communication systems.THz switches based on conventional waveguides and photonic crystal structures are sensitive to manufacturing defects and sharp bending,resulting in high scattering losses.In addition,THz switches with tunable working bandwidths have not yet been demonstrated.Here,we design THz switches based on a topological valley photonic crystal(VPC)structure using magnetic materials,which can achieve high forward transmittance based on the unique spin–valley locking effect.The broad working bandwidth allows selective turning on and off at a designed wavelength region by controlling the applied magnetic field.The designed THz switch can achieve an extinction ratio of up to 31.66 dB with an insertion loss of less than 0.13 dB.The 3-dB bandwidth is up to 49 GHz.This tunable THz switch can be experimentally fabricated by current fabrication techniques and thus can find broad applications in THz communication systems.展开更多
Nanostructured BN and BN-Co films with Cu,Co,Au as the top electrodes,and Pt as the bottom electrodes were grown by magnetron sputtering.Both BN samples and BN-Co ones show bipolar resistive switching behaviors.For th...Nanostructured BN and BN-Co films with Cu,Co,Au as the top electrodes,and Pt as the bottom electrodes were grown by magnetron sputtering.Both BN samples and BN-Co ones show bipolar resistive switching behaviors.For the sample with active Cu as the top electrode,the formation and rupture of metallic Cu conductive filaments can explain the resistive switching behavior;for the other samples,the generation and annihilation of nitrogen vacancies under the electric stimuli may contribute to the occurrence of resistive switching.Taking advantage of the formed and broken Co-N bonds during resistive switching,the saturation magnetization of the BN-Co films can be modulated.Thus,it investigated the resistive switching behavior of BN and BN-Co materials in this work.Similar to that of oxide materials,the resistive switching behaviors of the nitrides may be attributed to the movement of cations or anions within the dielectric or electrodes during the application of voltage.Additionally,ion migration may lead to the formation or breaking of Co-N bonds,which can effectively regulate the magnetism of BN-Co materials.This study extends resistive switching materials to nitrides,enabling the regulation of magnetism along with resistance changes,thus providing insights for the design of novel voltage-controlled magnetic devices and achieving multi-functionality.展开更多
Spin-orbit torque(SOT)has been considered as one of the promising technologies for the next-generation magnetic random access memory(MRAM).So far,SOT has been widely utilized for inducing various modes of magnetizatio...Spin-orbit torque(SOT)has been considered as one of the promising technologies for the next-generation magnetic random access memory(MRAM).So far,SOT has been widely utilized for inducing various modes of magnetization switching.However,it is a challenge that so many multiple modes of magnetization switching are integrated together.Here we propose a method of implementing both unipolar switching and bipolar switching of the perpendicular magnetization within a single SOT device.The mode of switching can be easily changed by tuning the amplitude of the applied current.We show that the field-like torque plays an important role in switching process.The field-like torque induces the precession of the magnetization in the case of unipolar switching,however,the field-like torque helps to generate an effective zcomponent torque in the case of bipolar switching.In addition,the influence of key parameters on the mode of switching is discussed,including the field-like torque strength,the bias field,and the current density.Our proposal can be used to design novel reconfigurable logic circuits in the near future.展开更多
The magnetization switching plays an essential role in spintronic devices.In this study,a Pd（3 nm）/Co（0.14–1.68 nm）/Pd（5 nm） wedge film is deposited on an Mg O（111） substrate by molecular beam epitaxy.We inve...The magnetization switching plays an essential role in spintronic devices.In this study,a Pd（3 nm）/Co（0.14–1.68 nm）/Pd（5 nm） wedge film is deposited on an Mg O（111） substrate by molecular beam epitaxy.We investigate the polar magneto-optical Kerr effect（MOKE） and carry out the first-order reversal curve（FORC） measurements.For the wedge system,it is observed that the Co thickness could drive the spin reorientation transition（SRT） from out-of-plane to in-plane.Meanwhile,we find the different types of magnetization switchings in the continuous SRT process,which can originate from the formation of different magnetic compositions.Our work provides the possibility of tuning the interfacial effect,and paves the way to analyzing magnetization switching.展开更多
The voltage controlled magnetic switching effect is verified experimentally. The Landau–Lifshitz–Gilbert（LLG）equation is used to study the voltage controlled magnetic switching. It is found that the initial values...The voltage controlled magnetic switching effect is verified experimentally. The Landau–Lifshitz–Gilbert（LLG）equation is used to study the voltage controlled magnetic switching. It is found that the initial values of magnetic moment components are critical for the switching effect, which should satisfy a definite condition. The external magnetic field which affects only the oscillation period should be comparable to the internal magnetic field. If the external magnetic field is too small, the switching effect will disappear. The precessions of mx and my are the best for the tilt angle of the external magnetic field θt = 0？, i.e., the field is perpendicular to the sample plane.展开更多
Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque(SOT)effect.However,the measurement of in-plane magnetization switching typically relies on the gi...Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque(SOT)effect.However,the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process,or the non-electric approach of Kerr imaging technique.Here,we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field.In this case,the symmetry of MR is broken,resulting in a resistance difference for opposite magnetization orientations.Moreover,the feasibility of our method is widely evidenced in heavy metal/ferromagnet(Pt/Ni_(20)Fe_(80) and W/Co_(20)Fe_(60)B_(20))and the topological insulator/ferromagnet(Bi_(2)Se_(3)/Ni_(20)Fe_(80)).Our work simplifies the characterization process of the in-plane magnetization switching,which can promote the development of SOT-based devices.展开更多
Spin-orbit torque(SOT)effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices.Recently,topological insulators(TIs)have gained extensive attentio...Spin-orbit torque(SOT)effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices.Recently,topological insulators(TIs)have gained extensive attention,as they are demonstrated to maintain a large effective spin Hall angle(θeff SH),even at room temperature.However,molecular beam epitaxy(MBE),as a precise deposition method,is required to guarantee favorable surface states of TIs,which hinders the prospect of TIs towards industrial application.In this paper,we demonstrate that Bi2Te3 films grown by magnetron sputtering can provide a notable SOT effect in the heterostructure with perpendicular magnetic anisotropy CoTb ferrimagnetic alloy.By harmonic Hall measurement,a high SOT efficiency(8.7±0.9 Oe/(10^9 A/m^2))and a largeθ^eff SH(3.3±0.3)are obtained at room temperature.Besides,we also observe an ultra-low critical switching current density(9.7×10^9 A/m^2).Moreover,the low-power characteristic of the sputtered Bi2Te3 film is investigated by drawing a comparison with different sputtered SOT sources.Our work may provide an alternative to leverage chalcogenides as a realistic and efficient SOT source in future spintronic devices.展开更多
The spin–orbit torque via the spin Hall effect of heavy metals has shown promising prospect in driving the magnetization switching in spintronic devices due to the generated spin current from heavy metals.Recently,th...The spin–orbit torque via the spin Hall effect of heavy metals has shown promising prospect in driving the magnetization switching in spintronic devices due to the generated spin current from heavy metals.Recently,the 3d-light metals have been predicted the ability to generate orbital current and the associated orbital torques from the orbital Hall effect.However,few experiments have been carried out since it is quite hard to directly detect the orbital current-generated orbital torque.Here,we report an effective method to demonstrate the strong orbital torques in light metal Cr through a conversion process from orbital current to spin current by introducing the Pt interfacial layer in perpendicularly magnetized symmetric Pt/Co/Pt structures.A quite large and monotonically growth of orbital torque efficiency in Pt/Co/Pt/Cr with the increase of the thickness of Cr layer is obtained with the largest effective orbital torque efficiency around 2.6 Oe/(MA·cm^(-2))(1 Oe=79.5775 A·m^(-1)).The ability of orbital torque to drive the magnetization switching is also reported with the critical switching current density down to the order of 106A·cm^(-2).Our findings prove the efficiency for switching the magnetization from light metal Cr layers through the orbital Hall effect.展开更多
Finite-control-set model predictive control(FCSMPC)has advantages of multi-objective optimization and easy implementation.To reduce the computational burden and switching frequency,this article proposed a simplified M...Finite-control-set model predictive control(FCSMPC)has advantages of multi-objective optimization and easy implementation.To reduce the computational burden and switching frequency,this article proposed a simplified MPC for dual three-phase permanent magnet synchronous motor(DTPPMSM).The novelty of this method is the decomposition of prediction function and the switching optimization algorithm.Based on the decomposition of prediction function,the current increment vector is obtained,which is employed to select the optimal voltage vector and calculate the duty cycle.Then,the computation burden can be reduced and the current tracking performance can be maintained.Additionally,the switching optimization algorithm was proposed to optimize the voltage vector action sequence,which results in lower switching frequency.Hence,this control strategy can not only reduce the computation burden and switching frequency,but also maintain the steady-state and dynamic performance.The simulation and experimental results are presented to verify the feasibility of the proposed strategy.展开更多
Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures.In particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential f...Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures.In particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential for low-power stateful logic circuits in the next generation.In this study,we successfully obtained the XOR logic gate by utilizing a spin-orbit torque device with a lateral interface,which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic anisotropy.The angle of the lateral interface is set at 45°relative to the current direction,leading to the competition between symmetry breaking and current-driven Néel-type domain wall motion.Consequently,the field-free magnetic switching reversed is realized by the same sign of current amplitude at this interface.Based on this field-free magnetic switching behavior,we successfully proposed an XOR logic gate that could be implemented using only a single spin-orbit torque Hall device.This study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.展开更多
For the advantages of easy realization and rapidly intelligent response,the one-cycle control was applied in five-phase six-leg switching power amplifier for magnetic bearing.This paper improves the one-cycle control ...For the advantages of easy realization and rapidly intelligent response,the one-cycle control was applied in five-phase six-leg switching power amplifier for magnetic bearing.This paper improves the one-cycle control considering resistance voltage drop and derives its mathematical models.The improved algorithm is compared with the former one.The simulation and experimental results show that the improved algorithm can effectively reduce the output current ripple,achieve good tracking of the given current,improve the control accuracy,and verify the effectiveness and superiority of the method.展开更多
The performance of traditional flux switching permanent magnet tubular machine(FSPMTM)are improved by using new material and structure in this paper.The existing silicon steel sheet making for all mover cores or part ...The performance of traditional flux switching permanent magnet tubular machine(FSPMTM)are improved by using new material and structure in this paper.The existing silicon steel sheet making for all mover cores or part of stator cores are replaced by soft magnetic composite(SMC)cores,and the lamination direction of the silicon steel sheet in stator cores have be changed.The eddy current loss of the machine with hybrid cores will be reduced greatly as the magnetic flux will not pass through the silicon steel sheet vertically.In order to reduce the influence of end effect,the unequal stator width design method is proposed.With the new design,the symmetry of the permanent magnet flux linkage has been improved greatly and the cogging force caused by the end effect has been reduced.Both 2-D and 3-D finite element methods(FEM)are applied for the quantitative analysis.展开更多
Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO（001） films is investigated by magnetoresistance measurements. When the temperature decreases from 300K to 80K, the measured three-...Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO（001） films is investigated by magnetoresistance measurements. When the temperature decreases from 300K to 80K, the measured three-jump hysteresis loops turn into two-jump loops. The temperature dependence of the fourfold in-plane magnetic anisotropy constant K1, domain wall pinning energy, and an additional uniaxial magnetic anisotropy constant KUare responsible for this transformation. The strengths of K1 and domain wall pinning energy increase with decreasing temperature, but KU remains unchanged. Moreover, magnetization reversal mechanisms, with either two successive or two separate 90°domain wall propagation, are introduced to explain the multi-jump magnetic switching process in epitaxial Fe/MgO（001） films at different temperatures.展开更多
Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The ma...Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.展开更多
Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient spintronics.Here,we propose a no...Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient spintronics.Here,we propose a novel approach to accomplish this task at room temperature by resistive switching(RS) via electrochemical metallization(ECM) in a device with the stack of Si/SiO_(2)/Ta/Pt/Ag/Mn-doped ZnO(MZO)/Pt/Co/Pt/ITO.By applying certain voltages,the device could be set at high-resistance-state(HRS) and low-resistance-state(LRS),accompanied with a larger and a smaller coercivity(H_(C)),respectively,which demonstrates a nonvolatile E-field control of PMA.Based on our previous studies and the present control experiments,the electric modulation of PMA can be briefly explained as follows.At LRS,the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich,leading to weakening of PMA and reduction of H_(C).In contrast,at HRS,most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich,causing partial recovery of PMA and an increase of H_(C).This work provides a new clue to designing low-power spintronic devices based on PMA films.展开更多
In this study,current-induced partial magnetization-based switching was realized through the spin–orbit torque(SOT)in single-layer L1_(0) FePt with a perpendicular anisotropy(K_(u⊥))of 1.19×10^(7) erg·cm^(...In this study,current-induced partial magnetization-based switching was realized through the spin–orbit torque(SOT)in single-layer L1_(0) FePt with a perpendicular anisotropy(K_(u⊥))of 1.19×10^(7) erg·cm^(-3)(1 erg·cm^(-3)=0.1 J·m^(-3)),and its corresponding SOT efficiency(βDL)was 8×10^(-6) Oe·(A·cm^(-2))^(-1)(1 Oe=79.57747 A·m^(-1)),which is several times higher than that of the traditional Ta/CoFeB/MgO structure reported in past work.The SOT in the FePt films originated from the structural inversion asymmetry in the FePt films since the dislocations and defects were inhomogeneously distributed within the samples.Furthermore,the FePt grown on MgO with a granular structure had a larger effective SOT field and effi-ciency than that grown on SrTiO_(3)(STO)with a continuous structure.The SOT efficiency was found to be considerably dependent on not only the sputtering temperature-induced chemical ordering but also the lattice mismatch-induced evolution of the microstructure.Our findings can provide a useful means of efficiently electrically controlling a magnetic bit that is highly thermally stable via SOT.展开更多
Permanent magnet flux-switching machine (PMFSM) is a relatively new structure. Available literatures mainly focused on its general design procedure and performance analysis. In this paper, Finite Element Method (FEM) ...Permanent magnet flux-switching machine (PMFSM) is a relatively new structure. Available literatures mainly focused on its general design procedure and performance analysis. In this paper, Finite Element Method (FEM) is taken to ana-lyze various design techniques to reduce the cogging torque in a prototype 12/10-pole PMFSM.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.62174016,12474047,12204202,and 11974355)the Basic Research Program of Jiangsu(Grant No.BK20220679)+1 种基金the Fund for Shanxi“1331Project”the Research Project Supported by Shanxi Scholarship Council of China.
文摘The presence of a van Hove singularity(vHS)at the Fermi level can trigger magnetic instability by mediating a spontaneous transition from paramagnetic to magnetically ordered states.While electrostatic doping(typically achieved via ionic gating)to shift the vHS to the Fermi level provides a general mechanism for engineering such magnetism,its volatile nature often leads to the collapse of induced states upon gate field removal.Here,a novel scheme is presented for non-volatile magnetic control by utilizing ferroelectric heterostructures to achieve reversible magnetism switching.Using two-dimensional VSiN_(3),a nonmagnetic material with Mexican-hat electronic band dispersions hosting vHSs,as a prototype,it is preliminarily demonstrated that both electron and hole doping can robustly induce magnetism.Further,by interfacing VSiN_(3)with ferroelectric Sc_(2)CO_(2),reversible switching of its magnetic state via polarization-driven heterointerfacial charge transfer is achieved.This mechanism enables a dynamic transition between insulating and half-metallic phases in VSiN_(3),establishing a pathway to design multiferroic tunnel junctions with giant tunneling electroresistance or magnetoresistance.This work bridges non-volatile ferroelectric control with vHS-enhanced magnetism,opening opportunities for energy-efficient and high-performance spintronic devices and non-volatile memory devices.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFA1404201)Australia Research Council(Grant Nos.DP220100603 and FT220100559)+7 种基金the National Natural Science Foundation of China(Grant No.U23A20375)the Natural Science Foundation of Shanxi Province(Grant No.202403021211011)Research Project Supported by Shanxi Scholarship Council of China(Grant No.2024-032)Fund Program for the Scientific Activities of Selected Returned Overseas Professionals in Shanxi Province(Grant No.20240006)the Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices(Grant No.KF202402)Basic Scientific Research Conditions and Major Scientific Instrument and Equipment Development of Anhui Science and Technology Department(Grant No.2023YFF0715700)Key Research Project of Shanxi Province(Grant No.202302150101001)Linkage Project Scheme(Grant Nos.LP210200345 and LP210100467).
文摘Terahertz(THz)switches are essential components of THz communication systems.THz switches based on conventional waveguides and photonic crystal structures are sensitive to manufacturing defects and sharp bending,resulting in high scattering losses.In addition,THz switches with tunable working bandwidths have not yet been demonstrated.Here,we design THz switches based on a topological valley photonic crystal(VPC)structure using magnetic materials,which can achieve high forward transmittance based on the unique spin–valley locking effect.The broad working bandwidth allows selective turning on and off at a designed wavelength region by controlling the applied magnetic field.The designed THz switch can achieve an extinction ratio of up to 31.66 dB with an insertion loss of less than 0.13 dB.The 3-dB bandwidth is up to 49 GHz.This tunable THz switch can be experimentally fabricated by current fabrication techniques and thus can find broad applications in THz communication systems.
文摘Nanostructured BN and BN-Co films with Cu,Co,Au as the top electrodes,and Pt as the bottom electrodes were grown by magnetron sputtering.Both BN samples and BN-Co ones show bipolar resistive switching behaviors.For the sample with active Cu as the top electrode,the formation and rupture of metallic Cu conductive filaments can explain the resistive switching behavior;for the other samples,the generation and annihilation of nitrogen vacancies under the electric stimuli may contribute to the occurrence of resistive switching.Taking advantage of the formed and broken Co-N bonds during resistive switching,the saturation magnetization of the BN-Co films can be modulated.Thus,it investigated the resistive switching behavior of BN and BN-Co materials in this work.Similar to that of oxide materials,the resistive switching behaviors of the nitrides may be attributed to the movement of cations or anions within the dielectric or electrodes during the application of voltage.Additionally,ion migration may lead to the formation or breaking of Co-N bonds,which can effectively regulate the magnetism of BN-Co materials.This study extends resistive switching materials to nitrides,enabling the regulation of magnetism along with resistance changes,thus providing insights for the design of novel voltage-controlled magnetic devices and achieving multi-functionality.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62171013 and 61704005)the National Key Research and Development Program of China(Grant Nos.2021YFB3601303,2021YFB3601304,and 2021YFB3601300)+1 种基金the Beijing Municipal Science and Technology Project,China(Grant No.Z201100004220002)the Fundamental Research Funds for the Central Universities,China(Grant No.YWF-21-BJ-J-1043)。
文摘Spin-orbit torque(SOT)has been considered as one of the promising technologies for the next-generation magnetic random access memory(MRAM).So far,SOT has been widely utilized for inducing various modes of magnetization switching.However,it is a challenge that so many multiple modes of magnetization switching are integrated together.Here we propose a method of implementing both unipolar switching and bipolar switching of the perpendicular magnetization within a single SOT device.The mode of switching can be easily changed by tuning the amplitude of the applied current.We show that the field-like torque plays an important role in switching process.The field-like torque induces the precession of the magnetization in the case of unipolar switching,however,the field-like torque helps to generate an effective zcomponent torque in the case of bipolar switching.In addition,the influence of key parameters on the mode of switching is discussed,including the field-like torque strength,the bias field,and the current density.Our proposal can be used to design novel reconfigurable logic circuits in the near future.
基金Project supported by the National Basic Research Program of China(Grant Nos.2015CB921403 and 2016YFA0300701)the National Natural Science Foundation of China(Grant Nos.51427801,11374350,and 51671212)
文摘The magnetization switching plays an essential role in spintronic devices.In this study,a Pd（3 nm）/Co（0.14–1.68 nm）/Pd（5 nm） wedge film is deposited on an Mg O（111） substrate by molecular beam epitaxy.We investigate the polar magneto-optical Kerr effect（MOKE） and carry out the first-order reversal curve（FORC） measurements.For the wedge system,it is observed that the Co thickness could drive the spin reorientation transition（SRT） from out-of-plane to in-plane.Meanwhile,we find the different types of magnetization switchings in the continuous SRT process,which can originate from the formation of different magnetic compositions.Our work provides the possibility of tuning the interfacial effect,and paves the way to analyzing magnetization switching.
基金supported by the Advanced Research Plan of the Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC015)
文摘The voltage controlled magnetic switching effect is verified experimentally. The Landau–Lifshitz–Gilbert（LLG）equation is used to study the voltage controlled magnetic switching. It is found that the initial values of magnetic moment components are critical for the switching effect, which should satisfy a definite condition. The external magnetic field which affects only the oscillation period should be comparable to the internal magnetic field. If the external magnetic field is too small, the switching effect will disappear. The precessions of mx and my are the best for the tilt angle of the external magnetic field θt = 0？, i.e., the field is perpendicular to the sample plane.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11904017, 11974145, 51901008, and 12004024)Shandong Provincial Natural Science Foundation, China (Grant No. ZR2020ZD28)+1 种基金platform from Qingdao Science and Technology Commissionthe Fundamental Research Funds for the Central Universities of China
文摘Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque(SOT)effect.However,the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process,or the non-electric approach of Kerr imaging technique.Here,we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field.In this case,the symmetry of MR is broken,resulting in a resistance difference for opposite magnetization orientations.Moreover,the feasibility of our method is widely evidenced in heavy metal/ferromagnet(Pt/Ni_(20)Fe_(80) and W/Co_(20)Fe_(60)B_(20))and the topological insulator/ferromagnet(Bi_(2)Se_(3)/Ni_(20)Fe_(80)).Our work simplifies the characterization process of the in-plane magnetization switching,which can promote the development of SOT-based devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61971024 and 51901008)Young Elite Scientist Sponsorship Program by CAST(Grant No.2017QNRC001)+2 种基金the International Mobility Project(Grant No.B16001)National Key Technology Program of China(Grant No.2017ZX01032101)P.K.A.acknowledges support by a grant from the National Science Foundation,Division of Electrical,Communications and Cyber Systems(NSF ECCS-1853879).
文摘Spin-orbit torque(SOT)effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices.Recently,topological insulators(TIs)have gained extensive attention,as they are demonstrated to maintain a large effective spin Hall angle(θeff SH),even at room temperature.However,molecular beam epitaxy(MBE),as a precise deposition method,is required to guarantee favorable surface states of TIs,which hinders the prospect of TIs towards industrial application.In this paper,we demonstrate that Bi2Te3 films grown by magnetron sputtering can provide a notable SOT effect in the heterostructure with perpendicular magnetic anisotropy CoTb ferrimagnetic alloy.By harmonic Hall measurement,a high SOT efficiency(8.7±0.9 Oe/(10^9 A/m^2))and a largeθ^eff SH(3.3±0.3)are obtained at room temperature.Besides,we also observe an ultra-low critical switching current density(9.7×10^9 A/m^2).Moreover,the low-power characteristic of the sputtered Bi2Te3 film is investigated by drawing a comparison with different sputtered SOT sources.Our work may provide an alternative to leverage chalcogenides as a realistic and efficient SOT source in future spintronic devices.
基金the National Natural Science Foundation of China(Grant Nos.91963201 and 51671098)the 111 Project(Grant No.B20063)+1 种基金the Program for Changjiang Scholars and Innovative Research Team in University PCSIRT(Grant No.IRT16R35)the Natural Science Foundation of Gansu Province,China(Grant No.22JR5RA474).
文摘The spin–orbit torque via the spin Hall effect of heavy metals has shown promising prospect in driving the magnetization switching in spintronic devices due to the generated spin current from heavy metals.Recently,the 3d-light metals have been predicted the ability to generate orbital current and the associated orbital torques from the orbital Hall effect.However,few experiments have been carried out since it is quite hard to directly detect the orbital current-generated orbital torque.Here,we report an effective method to demonstrate the strong orbital torques in light metal Cr through a conversion process from orbital current to spin current by introducing the Pt interfacial layer in perpendicularly magnetized symmetric Pt/Co/Pt structures.A quite large and monotonically growth of orbital torque efficiency in Pt/Co/Pt/Cr with the increase of the thickness of Cr layer is obtained with the largest effective orbital torque efficiency around 2.6 Oe/(MA·cm^(-2))(1 Oe=79.5775 A·m^(-1)).The ability of orbital torque to drive the magnetization switching is also reported with the critical switching current density down to the order of 106A·cm^(-2).Our findings prove the efficiency for switching the magnetization from light metal Cr layers through the orbital Hall effect.
基金supported by the National Natural Science Foundation of China under Grant 5227705。
文摘Finite-control-set model predictive control(FCSMPC)has advantages of multi-objective optimization and easy implementation.To reduce the computational burden and switching frequency,this article proposed a simplified MPC for dual three-phase permanent magnet synchronous motor(DTPPMSM).The novelty of this method is the decomposition of prediction function and the switching optimization algorithm.Based on the decomposition of prediction function,the current increment vector is obtained,which is employed to select the optimal voltage vector and calculate the duty cycle.Then,the computation burden can be reduced and the current tracking performance can be maintained.Additionally,the switching optimization algorithm was proposed to optimize the voltage vector action sequence,which results in lower switching frequency.Hence,this control strategy can not only reduce the computation burden and switching frequency,but also maintain the steady-state and dynamic performance.The simulation and experimental results are presented to verify the feasibility of the proposed strategy.
基金financially supported by the Chinese Academy of Sciences (Nos.XDA18000000 and Y201926)the Youth Innovation Promotion Association of CAS (No.2020118)+1 种基金Beijing Municipal Natural Science Foundation (No.4244071)the Funding Support from Research Grants Council—Early Career Scheme (No.26200520)。
文摘Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures.In particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential for low-power stateful logic circuits in the next generation.In this study,we successfully obtained the XOR logic gate by utilizing a spin-orbit torque device with a lateral interface,which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic anisotropy.The angle of the lateral interface is set at 45°relative to the current direction,leading to the competition between symmetry breaking and current-driven Néel-type domain wall motion.Consequently,the field-free magnetic switching reversed is realized by the same sign of current amplitude at this interface.Based on this field-free magnetic switching behavior,we successfully proposed an XOR logic gate that could be implemented using only a single spin-orbit torque Hall device.This study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.
基金supported by the National Science Foundation of China(No.51607096)。
文摘For the advantages of easy realization and rapidly intelligent response,the one-cycle control was applied in five-phase six-leg switching power amplifier for magnetic bearing.This paper improves the one-cycle control considering resistance voltage drop and derives its mathematical models.The improved algorithm is compared with the former one.The simulation and experimental results show that the improved algorithm can effectively reduce the output current ripple,achieve good tracking of the given current,improve the control accuracy,and verify the effectiveness and superiority of the method.
基金This work was supported in part by the National Natural Science Foundation of China under project 51877065Hebei Province Education Department Youth Talent Leading Project under grant BJ2018037in part by the State Key Laboratory of Reliability and Intelligence of Electrical Equipment under grant EERIKF2018005.
文摘The performance of traditional flux switching permanent magnet tubular machine(FSPMTM)are improved by using new material and structure in this paper.The existing silicon steel sheet making for all mover cores or part of stator cores are replaced by soft magnetic composite(SMC)cores,and the lamination direction of the silicon steel sheet in stator cores have be changed.The eddy current loss of the machine with hybrid cores will be reduced greatly as the magnetic flux will not pass through the silicon steel sheet vertically.In order to reduce the influence of end effect,the unequal stator width design method is proposed.With the new design,the symmetry of the permanent magnet flux linkage has been improved greatly and the cogging force caused by the end effect has been reduced.Both 2-D and 3-D finite element methods(FEM)are applied for the quantitative analysis.
基金supported by the National Basic Research Program of China(Grant Nos.2015CB921403,2011CB921801,and 2012CB933102)the National Natural Science Foundation of China(Grant Nos.51427801,11374350,and 11274361)
文摘Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO（001） films is investigated by magnetoresistance measurements. When the temperature decreases from 300K to 80K, the measured three-jump hysteresis loops turn into two-jump loops. The temperature dependence of the fourfold in-plane magnetic anisotropy constant K1, domain wall pinning energy, and an additional uniaxial magnetic anisotropy constant KUare responsible for this transformation. The strengths of K1 and domain wall pinning energy increase with decreasing temperature, but KU remains unchanged. Moreover, magnetization reversal mechanisms, with either two successive or two separate 90°domain wall propagation, are introduced to explain the multi-jump magnetic switching process in epitaxial Fe/MgO（001） films at different temperatures.
基金the Tencent Foundation through the XPLORER PRIZEthe National Key Research and Development Program of China(Grant Nos.2018YFB0407602 and 2021YFB3601303)the National Natural Science Foundation of China(Grant Nos.61627813,11904017,92164206,and 61571023)。
文摘Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.
基金Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403602)the National Natural Science Foundation of China (Grant Nos. 51971109, 52025012, and 52001169)。
文摘Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient spintronics.Here,we propose a novel approach to accomplish this task at room temperature by resistive switching(RS) via electrochemical metallization(ECM) in a device with the stack of Si/SiO_(2)/Ta/Pt/Ag/Mn-doped ZnO(MZO)/Pt/Co/Pt/ITO.By applying certain voltages,the device could be set at high-resistance-state(HRS) and low-resistance-state(LRS),accompanied with a larger and a smaller coercivity(H_(C)),respectively,which demonstrates a nonvolatile E-field control of PMA.Based on our previous studies and the present control experiments,the electric modulation of PMA can be briefly explained as follows.At LRS,the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich,leading to weakening of PMA and reduction of H_(C).In contrast,at HRS,most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich,causing partial recovery of PMA and an increase of H_(C).This work provides a new clue to designing low-power spintronic devices based on PMA films.
基金supported by National Key Research and Development Program of China (2020AAA0109005)the National Natural Science Foundation of China (61674062, 51501168, 41574175, and 41204083)+3 种基金the Fundamental Research Funds for the Central Universities of the China University of Geosciences (Wuhan) (CUG150632 and CUGL160414)the Fundamental Research Funds for National Universities of the China University of Geosciences (Wuhan)the Interdisciplinary program of Wuhan National High Magnetic Field Center (WHMFC202119)Huazhong University of Science and Technology, and Fund from Shenzhen Virtual University Park (2021Szvup091)
文摘In this study,current-induced partial magnetization-based switching was realized through the spin–orbit torque(SOT)in single-layer L1_(0) FePt with a perpendicular anisotropy(K_(u⊥))of 1.19×10^(7) erg·cm^(-3)(1 erg·cm^(-3)=0.1 J·m^(-3)),and its corresponding SOT efficiency(βDL)was 8×10^(-6) Oe·(A·cm^(-2))^(-1)(1 Oe=79.57747 A·m^(-1)),which is several times higher than that of the traditional Ta/CoFeB/MgO structure reported in past work.The SOT in the FePt films originated from the structural inversion asymmetry in the FePt films since the dislocations and defects were inhomogeneously distributed within the samples.Furthermore,the FePt grown on MgO with a granular structure had a larger effective SOT field and effi-ciency than that grown on SrTiO_(3)(STO)with a continuous structure.The SOT efficiency was found to be considerably dependent on not only the sputtering temperature-induced chemical ordering but also the lattice mismatch-induced evolution of the microstructure.Our findings can provide a useful means of efficiently electrically controlling a magnetic bit that is highly thermally stable via SOT.
文摘Permanent magnet flux-switching machine (PMFSM) is a relatively new structure. Available literatures mainly focused on its general design procedure and performance analysis. In this paper, Finite Element Method (FEM) is taken to ana-lyze various design techniques to reduce the cogging torque in a prototype 12/10-pole PMFSM.
