This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor （BJT）. Simulation results indicate the mechanism of current gain degradation, which is...This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor （BJT）. Simulation results indicate the mechanism of current gain degradation, which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current. The experimental results are well-matched with the simulation, which is modeled by exponential distributions of the interface state density replacing the single interface state trap. Furthermore, the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H-SiC BJT performance.展开更多
In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conve...In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.展开更多
In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor （LBJT） with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the ...In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor （LBJT） with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm 3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT （VBJT） with comparable breakdown voltage （3357 V） shows that the minimum base width of 0.25 ~tm and base doping as high as 8 × 10^17 cm^-3 contribute to a maximum current gain of only 128.展开更多
This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor （BJT-BSIT） compound device in the low current operation. It also proposes a best the...This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor （BJT-BSIT） compound device in the low current operation. It also proposes a best thermal compensating factor to the compound device that indicates the relationship between the thermal variation rate of current gain and device structure. This is important for the design of compound device to be optimized. Finally, the analytical model is found to be in good agreement with numerical simulation and experimental results. The test results demonstrate that thermal variation rate of current gain is below 10% in 25 ℃-85 ℃ and 20% in -55 ℃-25 ℃.展开更多
A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of hol...A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of holes through polysilicon/silicon interface oxide layer and reduced mobility mechanism in polysilicon. The modeling results based on this model are in good agreement with experimental data.展开更多
Considering the impacts of ideal factor n, VBE and band gap changes with the temperature on current gain, the current gain expression has been corrected to make the results closer to the actual test. Besides, the acce...Considering the impacts of ideal factor n, VBE and band gap changes with the temperature on current gain, the current gain expression has been corrected to make the results closer to the actual test. Besides, the accelerating lifetime study method in the constant temperature-humidity stress is used to estimate the reliability of the same batch transistors. Applying the revised findings from the expression, the current gains before and after the test are compared and analyzed, and, according to the degradation data of the current gain, the transistor lifetimes in the test stress are respectively extrapolated in the different failure criteria.展开更多
Due to the backscattered parasitic current from the barriers,the current gain of the widely used amplifier is far from ideal.In this work,we demonstrate a vertical Au/Al2O3/BP/MoS2 tunneling hot-electron transfer ampl...Due to the backscattered parasitic current from the barriers,the current gain of the widely used amplifier is far from ideal.In this work,we demonstrate a vertical Au/Al2O3/BP/MoS2 tunneling hot-electron transfer amplifier with a hot-electron emitter-base junction and a p-n junction as the base-collector barrier.Fairly monoenergetic electrons traverse through the ultrathin Al2O3 dielectric via tunneling,which are accelerated and shifted to the collector region.The devices exhibit a high current on-off ratio of>105 and a high current density(JC)of∼1,000 A/cm2 at the same time.Notably,this work demonstrates a common-emitter current gain(β)value of 1,384 with a nanowatt power consumption at room temperature,which is a record high value among the all 2D based hot-electron transistors.Furthermore,the temperature dependent performance is investigated,and theβvalue of 1,613 is obtained at 150 K.Therefore,this work presents the potential of 2D based transistors for high-performance applications.展开更多
A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to improve the current gain due to the lower electrons density in the surface region by extending the ...A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to improve the current gain due to the lower electrons density in the surface region by extending the emitter metal to overlap the passivation layer on the extrinsic base surface. The electrons trapped in the extrinsic base surface induce the degeneration of Si C BJTs device performance. By modulating the electron recombination rate, the novel structure can increase the current gain to 63.2% compared with conventional ones with the compatible process technology. Optimized sizes are an overlapped metal length of 4 m, as well as an oxide layer thickness of 50 nm.展开更多
Direct current（DC） and radio frequency（RF） performances of InP-based high electron mobility transistors（HEMTs）are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shock...Direct current（DC） and radio frequency（RF） performances of InP-based high electron mobility transistors（HEMTs）are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shockley–Read–Hall recombination, Auger recombination, radiative recombination, density gradient model and high field-dependent mobility are used to characterize the devices. The simulated results and measured results about DC and RF performances are compared, showing that they are well matched. However, the slight differences in channel current and pinch-off voltage may be accounted for by the surface defects resulting from oxidized InAlAs material in the gate-recess region. Moreover,the simulated frequency characteristics can be extrapolated beyond the test equipment limitation of 40 GHz, which gives a more accurate maximum oscillation frequency( f;) of 385 GHz.展开更多
目的了解我国东北地区孕妇孕期增重自我认知的现状,分析孕期体重增长自我认知的影响因素,为制定孕妇的体重增长策略提供科学依据。方法基于科技部基础资源调查专项“中国孕产妇营养与健康科学调查”所收集到的2020—2024年我国东北地区...目的了解我国东北地区孕妇孕期增重自我认知的现状,分析孕期体重增长自我认知的影响因素,为制定孕妇的体重增长策略提供科学依据。方法基于科技部基础资源调查专项“中国孕产妇营养与健康科学调查”所收集到的2020—2024年我国东北地区孕妇体重情况的有关数据,根据孕妇对目前孕期体重增长的自我认知与实际孕期体重增长的符合程度,评价孕期增重自我认知情况,并分析其影响因素。结果孕期增重自我认知的偏移率为55.08%(3877/7039)。妊娠阶段为孕中期是孕期增重自我认知偏移的促进因素(孕前消瘦:OR=2.60,95%CI:1.72~3.97;孕前体重正常:OR=2.39,95%CI:2.04~2.80;孕前超重肥胖:OR=2.77,95%CI:2.25~3.42);在孕前体重正常的孕妇中,孕妇常住地为农村是孕期增重自我认知偏移的阻碍因素(OR=0.83,95%CI:0.71~0.97);在孕前超重肥胖的孕妇中,妊娠阶段为孕晚期以及孕前体重自我认知偏移也为孕期增重自我认知偏移的促进因素(OR=1.97,95%CI:1.59~2.43;OR=1.64,95%CI:1.38~1.96)。结论东北地区孕妇的孕期增重异常比例较高,且孕期增重过多的问题较为突出。孕期增重自我认知偏移率较高,孕妇高估或低估孕期增重等自我认知偏移情况较为严重。常住地、妊娠阶段、孕前体质指数(body mass index,BMI)分类、孕前体重自我认知是与孕期增重自我认知的相关因素。展开更多
随着清洁能源规模的不断扩大,可平滑电能输出的混合储能系统(hybrid energy storage system,HESS)逐渐受到广泛关注。双有源桥可实现电气隔离和软开关,常应用于HESS中。为拓宽电压增益范围并降低储能装置侧电流纹波,文中提出一种基于电...随着清洁能源规模的不断扩大,可平滑电能输出的混合储能系统(hybrid energy storage system,HESS)逐渐受到广泛关注。双有源桥可实现电气隔离和软开关,常应用于HESS中。为拓宽电压增益范围并降低储能装置侧电流纹波,文中提出一种基于电流源型双向谐振变换器的HESS拓扑。首先,给出变换器的拓扑及等效电路,分析其开关模态和工作原理,推导出等效电路模型、电压增益表达式及低压侧电流纹波特性。在此基础上,提出一种解耦控制策略,通过调节各储能装置侧全桥的占空比独立控制超级电容和蓄电池的传输功率,并根据功率分配指令动态调整各端口功率占比。仿真结果表明,所提系统能实现各开关管的零电压开通(zero voltage switching,ZVS),在负载切换和功率指令变化时均表现出快速的动态响应和良好的稳定性。展开更多
A double balanced Gilbert-cell class-A amplifier bleeding mixer (DBGC CAAB mixer) is proposed and implemented. The injection current is utilized to amplify the local oscillator (LO) signal to improve the performance o...A double balanced Gilbert-cell class-A amplifier bleeding mixer (DBGC CAAB mixer) is proposed and implemented. The injection current is utilized to amplify the local oscillator (LO) signal to improve the performance of the transconductor stage. The DBGC CAAB mixer achieves a conversion gain of 17.5 dB at -14 dBm LO power, and the noise figure is suppressed from 45 dB to 10.7 dB. It is important to stress that the new configuration will not drain additional power in contrast to the former current bleeding mixers. This topology dramatically relieves the requirement of the LO power. The DBGC CAAB mixer is implemented by using 0.18-μm RFCMOS technology and operates at the 2.4 GHz ISM application with 10 MHz intermediate frequency. The power consumption is 12 mA at 1.5 V supply voltage. The DBGC CAAB mixer features the highest FOM figure within a wide range of LO power.展开更多
碲镉汞短波红外焦平面探测器在红外天文观测中具有重要作用。采用光子转移曲线(Photon Transfer Curve, PTC)来表征探测器性能参数是一种重要的测试方法。根据PTC测量探测器的增益是表征探测器其他性能的前提。采用碲镉汞液相外延薄膜...碲镉汞短波红外焦平面探测器在红外天文观测中具有重要作用。采用光子转移曲线(Photon Transfer Curve, PTC)来表征探测器性能参数是一种重要的测试方法。根据PTC测量探测器的增益是表征探测器其他性能的前提。采用碲镉汞液相外延薄膜材料和n-on-p芯片结构制备了640×512规格的红外探测器,探测器截止波长为2.0μm。用PTC方法测量红外焦平面探测器的增益,发现在焦平面上不同区域的增益是不均匀的,增益的非均匀性达到了20.2%。增益的非均匀性反映了探测器芯片内部性能的差异,尤其是不同光敏元噪声的差异。芯片加工过程可能是引起增益不均匀的原因之一。通过改进芯片工艺,特别是改进芯片的机械化学减薄工艺,降低抛光损伤,提高了探测器芯片表面不同区域的增益均匀性。改进工艺后,增益的非均匀性从20.2%降低到0.3%,获得了增益均匀的探测器芯片,增益的平均值为0.159 DN/e-,并测量得到探测器的暗电流为2.2 e-/s,读出噪声为67 e-。展开更多
文摘This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor （BJT）. Simulation results indicate the mechanism of current gain degradation, which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current. The experimental results are well-matched with the simulation, which is modeled by exponential distributions of the interface state density replacing the single interface state trap. Furthermore, the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H-SiC BJT performance.
文摘In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.
基金supported by the Ministry of Education of China (Grant No. 20100101110056)the Natural Science Foundation for Distinguished Young Scholars of Zhejiang Province of China (Grant No. R1100468)
文摘In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor （LBJT） with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm 3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT （VBJT） with comparable breakdown voltage （3357 V） shows that the minimum base width of 0.25 ~tm and base doping as high as 8 × 10^17 cm^-3 contribute to a maximum current gain of only 128.
文摘This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor （BJT-BSIT） compound device in the low current operation. It also proposes a best thermal compensating factor to the compound device that indicates the relationship between the thermal variation rate of current gain and device structure. This is important for the design of compound device to be optimized. Finally, the analytical model is found to be in good agreement with numerical simulation and experimental results. The test results demonstrate that thermal variation rate of current gain is below 10% in 25 ℃-85 ℃ and 20% in -55 ℃-25 ℃.
基金Supported by National Natural Science Foundation of China
文摘A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of holes through polysilicon/silicon interface oxide layer and reduced mobility mechanism in polysilicon. The modeling results based on this model are in good agreement with experimental data.
文摘Considering the impacts of ideal factor n, VBE and band gap changes with the temperature on current gain, the current gain expression has been corrected to make the results closer to the actual test. Besides, the accelerating lifetime study method in the constant temperature-humidity stress is used to estimate the reliability of the same batch transistors. Applying the revised findings from the expression, the current gains before and after the test are compared and analyzed, and, according to the degradation data of the current gain, the transistor lifetimes in the test stress are respectively extrapolated in the different failure criteria.
基金This work was supported by the National Key Research and Development Program of Ministry of Science and Technology(Nos.2018YFA0703704 and 2018YFB0406603)the National Natural Science Foundation of China(Nos.61851403,51872084,61704052,61811540408,51872084,and 61704051)as well as the Natural Science Foundation of Hunan Province(Nos.2017RS3021 and 2017JJ3033).
文摘Due to the backscattered parasitic current from the barriers,the current gain of the widely used amplifier is far from ideal.In this work,we demonstrate a vertical Au/Al2O3/BP/MoS2 tunneling hot-electron transfer amplifier with a hot-electron emitter-base junction and a p-n junction as the base-collector barrier.Fairly monoenergetic electrons traverse through the ultrathin Al2O3 dielectric via tunneling,which are accelerated and shifted to the collector region.The devices exhibit a high current on-off ratio of>105 and a high current density(JC)of∼1,000 A/cm2 at the same time.Notably,this work demonstrates a common-emitter current gain(β)value of 1,384 with a nanowatt power consumption at room temperature,which is a record high value among the all 2D based hot-electron transistors.Furthermore,the temperature dependent performance is investigated,and theβvalue of 1,613 is obtained at 150 K.Therefore,this work presents the potential of 2D based transistors for high-performance applications.
基金Project supported by the National Natural Science Foundation of China(Nos.61306093,61401075)
文摘A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to improve the current gain due to the lower electrons density in the surface region by extending the emitter metal to overlap the passivation layer on the extrinsic base surface. The electrons trapped in the extrinsic base surface induce the degeneration of Si C BJTs device performance. By modulating the electron recombination rate, the novel structure can increase the current gain to 63.2% compared with conventional ones with the compatible process technology. Optimized sizes are an overlapped metal length of 4 m, as well as an oxide layer thickness of 50 nm.
基金supported by the National Natural Science Foundation of China(Grant Nos.61404115 and 61434006)the Postdoctoral Science Foundation of Henan Province,China(Grant No.2014006)the Development Fund for Outstanding Young Teachers of Zhengzhou University(Grant No.1521317004)
文摘Direct current（DC） and radio frequency（RF） performances of InP-based high electron mobility transistors（HEMTs）are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shockley–Read–Hall recombination, Auger recombination, radiative recombination, density gradient model and high field-dependent mobility are used to characterize the devices. The simulated results and measured results about DC and RF performances are compared, showing that they are well matched. However, the slight differences in channel current and pinch-off voltage may be accounted for by the surface defects resulting from oxidized InAlAs material in the gate-recess region. Moreover,the simulated frequency characteristics can be extrapolated beyond the test equipment limitation of 40 GHz, which gives a more accurate maximum oscillation frequency( f;) of 385 GHz.
文摘目的了解我国东北地区孕妇孕期增重自我认知的现状,分析孕期体重增长自我认知的影响因素,为制定孕妇的体重增长策略提供科学依据。方法基于科技部基础资源调查专项“中国孕产妇营养与健康科学调查”所收集到的2020—2024年我国东北地区孕妇体重情况的有关数据,根据孕妇对目前孕期体重增长的自我认知与实际孕期体重增长的符合程度,评价孕期增重自我认知情况,并分析其影响因素。结果孕期增重自我认知的偏移率为55.08%(3877/7039)。妊娠阶段为孕中期是孕期增重自我认知偏移的促进因素(孕前消瘦:OR=2.60,95%CI:1.72~3.97;孕前体重正常:OR=2.39,95%CI:2.04~2.80;孕前超重肥胖:OR=2.77,95%CI:2.25~3.42);在孕前体重正常的孕妇中,孕妇常住地为农村是孕期增重自我认知偏移的阻碍因素(OR=0.83,95%CI:0.71~0.97);在孕前超重肥胖的孕妇中,妊娠阶段为孕晚期以及孕前体重自我认知偏移也为孕期增重自我认知偏移的促进因素(OR=1.97,95%CI:1.59~2.43;OR=1.64,95%CI:1.38~1.96)。结论东北地区孕妇的孕期增重异常比例较高,且孕期增重过多的问题较为突出。孕期增重自我认知偏移率较高,孕妇高估或低估孕期增重等自我认知偏移情况较为严重。常住地、妊娠阶段、孕前体质指数(body mass index,BMI)分类、孕前体重自我认知是与孕期增重自我认知的相关因素。
文摘随着清洁能源规模的不断扩大,可平滑电能输出的混合储能系统(hybrid energy storage system,HESS)逐渐受到广泛关注。双有源桥可实现电气隔离和软开关,常应用于HESS中。为拓宽电压增益范围并降低储能装置侧电流纹波,文中提出一种基于电流源型双向谐振变换器的HESS拓扑。首先,给出变换器的拓扑及等效电路,分析其开关模态和工作原理,推导出等效电路模型、电压增益表达式及低压侧电流纹波特性。在此基础上,提出一种解耦控制策略,通过调节各储能装置侧全桥的占空比独立控制超级电容和蓄电池的传输功率,并根据功率分配指令动态调整各端口功率占比。仿真结果表明,所提系统能实现各开关管的零电压开通(zero voltage switching,ZVS),在负载切换和功率指令变化时均表现出快速的动态响应和良好的稳定性。
文摘A double balanced Gilbert-cell class-A amplifier bleeding mixer (DBGC CAAB mixer) is proposed and implemented. The injection current is utilized to amplify the local oscillator (LO) signal to improve the performance of the transconductor stage. The DBGC CAAB mixer achieves a conversion gain of 17.5 dB at -14 dBm LO power, and the noise figure is suppressed from 45 dB to 10.7 dB. It is important to stress that the new configuration will not drain additional power in contrast to the former current bleeding mixers. This topology dramatically relieves the requirement of the LO power. The DBGC CAAB mixer is implemented by using 0.18-μm RFCMOS technology and operates at the 2.4 GHz ISM application with 10 MHz intermediate frequency. The power consumption is 12 mA at 1.5 V supply voltage. The DBGC CAAB mixer features the highest FOM figure within a wide range of LO power.
