This paper explains the root cause of China＇s trade surplus and argues that it is rooted in structural factors. China＇s dual economic structure and the relatively slow growth in wages due to the abundant supply of l...This paper explains the root cause of China＇s trade surplus and argues that it is rooted in structural factors. China＇s dual economic structure and the relatively slow growth in wages due to the abundant supply of labor have led to a large supply glut between China＇s domestic demand and output, which has been balanced by export. This is a structural problem that cannot be solved by currency appreciation or the readjustment of capital account deficits. A potentially viable option is to adjust the current account by developing a new opening-up system featuring more freedom and compliance.展开更多
Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception.They hold great promise in neuromorphic visual systems(NVs).This study introduces the amorphous wide-bandgap Ga_(2)O...Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception.They hold great promise in neuromorphic visual systems(NVs).This study introduces the amorphous wide-bandgap Ga_(2)O_(3)photoelectric synaptic memristor,which achieves 3-bit data storage through the adjustment of current compliance(Icc)and the utilization of variable ultraviolet(UV-254 nm)light intensities.The“AND”and“OR”logic gates in memristor-aided logic(MAGIC)are implemented by utilizing voltage polarity and UV light as input signals.The device also exhibits highly stable synaptic characteristics such as paired-pulse facilitation(PPF),spike-intensity dependent plasticity(SIDP),spike-number dependent plasticity(SNDP),spike-time dependent plasticity(STDP),spike-frequency dependent plasticity(SFDP)and the learning experience behavior.Finally,when integrated into an artificial neural network(ANN),the Ag/Ga_(2)O_(3)/Pt memristive device mimicked optical pulse potentiation and electrical pulse depression with high pattern accuracy(90.7%).The single memristive cells with multifunctional features are promising candidates for optoelectronic memory storage,neuromorphic computing,and artificial visual perception applications.展开更多
文摘This paper explains the root cause of China＇s trade surplus and argues that it is rooted in structural factors. China＇s dual economic structure and the relatively slow growth in wages due to the abundant supply of labor have led to a large supply glut between China＇s domestic demand and output, which has been balanced by export. This is a structural problem that cannot be solved by currency appreciation or the readjustment of capital account deficits. A potentially viable option is to adjust the current account by developing a new opening-up system featuring more freedom and compliance.
基金supported by National Key Research and Development Program of China(Grant 2021YFA0715600,2021YFA0717700,2018YFB2202900)the National Natural Science Foundation of China(52192610,62274127,62374128,62304167)+7 种基金2023 Qinchuangyuan Construction Two Chain Integration Special Project(23LLRH0043)Key Research and Development Program of Shaanxi Province(Grant 2024GXYBXM-512)CAS Project for Young Scientists in Basic Research(YSBR-113)the open fund of State Key Laboratory of Infrared Physics(SITP-NLIST-ZD-2023-03)the open research fund of Songshan Lake Materials Laboratory(2023SLABFN02)the Wuhu and Xidian University special fund for industryuniversity-research cooperation(XWYCXY-012021004)China Postdoctoral Science Foundation(2023TQ0255)the Fundamental Research Funds for the Central Universities and the Innovation Fund of Xidian University.
文摘Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception.They hold great promise in neuromorphic visual systems(NVs).This study introduces the amorphous wide-bandgap Ga_(2)O_(3)photoelectric synaptic memristor,which achieves 3-bit data storage through the adjustment of current compliance(Icc)and the utilization of variable ultraviolet(UV-254 nm)light intensities.The“AND”and“OR”logic gates in memristor-aided logic(MAGIC)are implemented by utilizing voltage polarity and UV light as input signals.The device also exhibits highly stable synaptic characteristics such as paired-pulse facilitation(PPF),spike-intensity dependent plasticity(SIDP),spike-number dependent plasticity(SNDP),spike-time dependent plasticity(STDP),spike-frequency dependent plasticity(SFDP)and the learning experience behavior.Finally,when integrated into an artificial neural network(ANN),the Ag/Ga_(2)O_(3)/Pt memristive device mimicked optical pulse potentiation and electrical pulse depression with high pattern accuracy(90.7%).The single memristive cells with multifunctional features are promising candidates for optoelectronic memory storage,neuromorphic computing,and artificial visual perception applications.
