A 10-bit 500 kHz low-power successive approximation register(SAR)analog-to-digital converter(ADC)for cryogenic infrared readout circuit is proposed.To improve the simulation accuracy of metal-oxidesemiconductor field-...A 10-bit 500 kHz low-power successive approximation register(SAR)analog-to-digital converter(ADC)for cryogenic infrared readout circuit is proposed.To improve the simulation accuracy of metal-oxidesemiconductor field-efect transistors(MOSFETs),corresponding modification in device model is presented on the basis of BSIM3v3 with parameter extraction at 77 K.Corresponding timing is adopted in comparator to eliminate the influence caused by abnormal performance of MOSFETs at 77 K.The SAR ADC is fabricated and verified by standard 0.35μm complementary metal oxide semiconductor(CMOS)process.At 77 K,measurement results show that signal to noise and distortion ratio(SNDR)is 54.74 dB and efective number of bits(ENOB)is 8.8 at the sampling rate of 500 kHz.The total circuit consumes 0.6 mW at 3.3 V power supply.展开更多
Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in th...Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in this paper. By employing a set of analytical formulas, this approach extracts all of the necessary physical parameters of the diode chip in a unique way. It then extracts the package parasitic parameters with a curve-fitting method. To validate the proposed approach, a model HSMS-282 c commercial Schottky diode is taken as an example. Its physical parameters are extracted and used to simulate the diode＇s electrical characteristics. The simulated results based on the extracted parameters are compared with the measurements and a good agreement is obtained, which verifies the feasibility and accuracy of the proposed approach.展开更多
基于BSIMSOI模型研究了深亚微米级部分耗尽型绝缘体上硅金属氧化物半导体场效应晶体管(PD SOI MOSFET)器件的自加热效应、体接触效应及浮体效应,并提出了PD SOI MOSFET的建模方法及相应的模型参数提取方法。根据上述方法对西安微电子技...基于BSIMSOI模型研究了深亚微米级部分耗尽型绝缘体上硅金属氧化物半导体场效应晶体管(PD SOI MOSFET)器件的自加热效应、体接触效应及浮体效应,并提出了PD SOI MOSFET的建模方法及相应的模型参数提取方法。根据上述方法对西安微电子技术研究所0.35μm工艺条件下的PD SOI器件进行了建模和验证,结果显示所建立的模型与测试数据吻合,表明本文所提方法的准确性及有效性。展开更多
基金the National Major Scientific and Technological Special Project of China(No.2012ZX03004008)the Science and Technology Pillar Program of Tianjin(No.11ZCKFGX01400)
文摘A 10-bit 500 kHz low-power successive approximation register(SAR)analog-to-digital converter(ADC)for cryogenic infrared readout circuit is proposed.To improve the simulation accuracy of metal-oxidesemiconductor field-efect transistors(MOSFETs),corresponding modification in device model is presented on the basis of BSIM3v3 with parameter extraction at 77 K.Corresponding timing is adopted in comparator to eliminate the influence caused by abnormal performance of MOSFETs at 77 K.The SAR ADC is fabricated and verified by standard 0.35μm complementary metal oxide semiconductor(CMOS)process.At 77 K,measurement results show that signal to noise and distortion ratio(SNDR)is 54.74 dB and efective number of bits(ENOB)is 8.8 at the sampling rate of 500 kHz.The total circuit consumes 0.6 mW at 3.3 V power supply.
基金Project supported by the Joint Fund of the National Natural Science Foundation of China and the China Academy of Engineering Physics(Grant No.U1230112)
文摘Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in this paper. By employing a set of analytical formulas, this approach extracts all of the necessary physical parameters of the diode chip in a unique way. It then extracts the package parasitic parameters with a curve-fitting method. To validate the proposed approach, a model HSMS-282 c commercial Schottky diode is taken as an example. Its physical parameters are extracted and used to simulate the diode＇s electrical characteristics. The simulated results based on the extracted parameters are compared with the measurements and a good agreement is obtained, which verifies the feasibility and accuracy of the proposed approach.
文摘碳化硅(SiC)MOSFET器件的短路耐受能力差是阻碍其广泛应用的关键难题,对于国产高压SiC MOSFET器件,其短路保护研发缺乏有力的技术、经验支撑。同时,缺乏快速、准确的仿真模型也是国产高压SiC MOSFET器件应用研发面临的核心问题之一。为此,该文提出一种适用于高压SiC MOSFET器件的、考虑器件实际物理特性的、可准确描述器件短路故障中电流、电压等外特性的行为模型。该行为模型针对高压SiC MOSFET的特点修正沟道电流模型中的电压,并基于元胞层面的电流路径对JFET区及漂移区电阻进行建模。该模型考虑了国产高压SiC MOSFET的实际器件设计、工艺等因素的影响,依据半导体、器件物理计算模型的关键参数,提升模型在短路故障仿真中的精度。并且,该文明确了模型所用参数的提取方法,其中关键参数获取自器件设计环节,建立起器件设计者与应用者之间的桥梁。最后,对国网智能电网研究院有限公司研制的6.5 kV/400 A SiC MOSFET器件开展短路测试实验,仿真结果与实验结果表现出较好的一致性,短路电流关键特征的相对误差小于2.5%,验证了该行为模型的准确性。
文摘基于BSIMSOI模型研究了深亚微米级部分耗尽型绝缘体上硅金属氧化物半导体场效应晶体管(PD SOI MOSFET)器件的自加热效应、体接触效应及浮体效应,并提出了PD SOI MOSFET的建模方法及相应的模型参数提取方法。根据上述方法对西安微电子技术研究所0.35μm工艺条件下的PD SOI器件进行了建模和验证,结果显示所建立的模型与测试数据吻合,表明本文所提方法的准确性及有效性。
