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AlGaInAs/InP coupled-circular microlasers 被引量:1
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作者 黄永箴 林建东 +4 位作者 姚齐峰 吕晓萌 杨跃德 肖金龙 杜云 《Chinese Optics Letters》 SCIE EI CAS CSCD 2012年第9期49-51,共3页
AlGalnAs/InP coupled-circular microlasers with radius of 10-and 2-μm width middle bus waveguide are fabricated by photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave s... AlGalnAs/InP coupled-circular microlasers with radius of 10-and 2-μm width middle bus waveguide are fabricated by photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave single-mode operation is realized with an output power of 0.17 mW and a side-mode suppression ratio of 23 dB at 45 mA. A longitudinal mode interval of 11 nm is obtained from the lasing spectra, and mode Q factor of 6.2×10^3 is estimated from 3-dB width of a minor peak near the threshold current. The mode characteristics are simulated by finite-difference time-domain technique for coupled- circular resonators. The results show that, in addition to the coupled modes, high-radial-order whispering gallery modes with travelling wave behaviors can also have high Q factors in the coupled-circular resonators with a middle bus waveguide. 展开更多
关键词 INP BUS MODE AlGaInAs/InP coupled-circular microlasers
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