Two kinds of corner effects existing in double-gate （DG） and gate-all-around （GAA） MOSFETs have been investigated by three-dimensional （3D） and two-dimensional （2D） simulations. It is found that the corner eff...Two kinds of corner effects existing in double-gate （DG） and gate-all-around （GAA） MOSFETs have been investigated by three-dimensional （3D） and two-dimensional （2D） simulations. It is found that the corner effect caused by conterminous gates, which is usually deemed to deteriorate the transistor performance, does not always play a negative role in GAA transistors. It can suppress the leakage current of transistors with low channel doping, though it will enhance the leakage current at high channel doping. The study of another kind of corner effect, which exists in the corner at the bottom of the silicon pillar of DG/GAA vertical MOSFETs, indicates that the D-top structure with drain on the top of the device pillar of vertical transistor shows great advantage due to lower leakage current and better DIBL （drain induced barrier lowering） effect immunity than the S-top structure with source on the top of the device pillar. Therefore the D-top structure is more suitable when the requirement in leakage current and short channel character is critical.展开更多
Many natural creatures have demonstrated unique abilities in directional liquid transport(DLT)for better adapting to the local environment,which,for a long time,have inspired the material fabrication for applications ...Many natural creatures have demonstrated unique abilities in directional liquid transport(DLT)for better adapting to the local environment,which,for a long time,have inspired the material fabrication for applications in microfluidics,self-cleaning,water collection,etc.Recently,DLTs aroused by the corner effect have been witnessed in various natural organisms,where liquid transports/spreads spontaneously along the corner structures in microgrooves,wedges or conical structures driven by micro-/nano-scaled capillary forces without external energy input.Particularly,these DLTs show advantages of ultrahigh speed,continuous proceeding,and/or external controllability.Here,we reviewed recent research advances on the bioinspired DLTs induced by the corner effect,as well as the involved mechanisms and the artificial counterpart materials with various applications.We also introduced some bioinspired materials that are capable of stimulus-responsive DLT under external fields.Finally,we suggested perspectives of the bioinspired DLTs in liquid manipulations.展开更多
In this study we performed a classical spectrum analysis of seismic waveforms recorded at far field stations of the great MW7.9 Wenchuan earthquake to observe the shifts of the corner frequency with azimuth due to the...In this study we performed a classical spectrum analysis of seismic waveforms recorded at far field stations of the great MW7.9 Wenchuan earthquake to observe the shifts of the corner frequency with azimuth due to the Doppler effect.Our results show that this damaging great earthquake had a dominating rupture propagation direction of 64.0°.The equivalent radius of the fault rupture surface was estimated to be 33 km,yielding the rupture area of about 3 500 km2.Thus the length of the rupture fault surface is about 230 km if the depth（or width） extent is 15 km.The computer program developed in this study can quickly provide the information about the source of a future large（damaging） earthquake,which could be very useful for predicting aftershocks and planning the rescue operations.展开更多
基金Project supported by State Key Fundamental Research Project of China （Grant No 2000036501） and the National Natural Science Foundation of China （Grant No 90207004）.
文摘Two kinds of corner effects existing in double-gate （DG） and gate-all-around （GAA） MOSFETs have been investigated by three-dimensional （3D） and two-dimensional （2D） simulations. It is found that the corner effect caused by conterminous gates, which is usually deemed to deteriorate the transistor performance, does not always play a negative role in GAA transistors. It can suppress the leakage current of transistors with low channel doping, though it will enhance the leakage current at high channel doping. The study of another kind of corner effect, which exists in the corner at the bottom of the silicon pillar of DG/GAA vertical MOSFETs, indicates that the D-top structure with drain on the top of the device pillar of vertical transistor shows great advantage due to lower leakage current and better DIBL （drain induced barrier lowering） effect immunity than the S-top structure with source on the top of the device pillar. Therefore the D-top structure is more suitable when the requirement in leakage current and short channel character is critical.
基金supported by the National Key R&D Program of China(No.2018YFA0704801)the National Natural Science Foundation of China for Distinguished Young Scholar(No.22125201)the National Natural Science Foundation of China(Nos.21872002 and 22105013).
文摘Many natural creatures have demonstrated unique abilities in directional liquid transport(DLT)for better adapting to the local environment,which,for a long time,have inspired the material fabrication for applications in microfluidics,self-cleaning,water collection,etc.Recently,DLTs aroused by the corner effect have been witnessed in various natural organisms,where liquid transports/spreads spontaneously along the corner structures in microgrooves,wedges or conical structures driven by micro-/nano-scaled capillary forces without external energy input.Particularly,these DLTs show advantages of ultrahigh speed,continuous proceeding,and/or external controllability.Here,we reviewed recent research advances on the bioinspired DLTs induced by the corner effect,as well as the involved mechanisms and the artificial counterpart materials with various applications.We also introduced some bioinspired materials that are capable of stimulus-responsive DLT under external fields.Finally,we suggested perspectives of the bioinspired DLTs in liquid manipulations.
文摘In this study we performed a classical spectrum analysis of seismic waveforms recorded at far field stations of the great MW7.9 Wenchuan earthquake to observe the shifts of the corner frequency with azimuth due to the Doppler effect.Our results show that this damaging great earthquake had a dominating rupture propagation direction of 64.0°.The equivalent radius of the fault rupture surface was estimated to be 33 km,yielding the rupture area of about 3 500 km2.Thus the length of the rupture fault surface is about 230 km if the depth（or width） extent is 15 km.The computer program developed in this study can quickly provide the information about the source of a future large（damaging） earthquake,which could be very useful for predicting aftershocks and planning the rescue operations.
