The erosion of silver contacts due to break arcs with length proportional to time and of variable duration has been measured by weighing the contacts following 5000 openings at a constant current equal to 40 A.The exp...The erosion of silver contacts due to break arcs with length proportional to time and of variable duration has been measured by weighing the contacts following 5000 openings at a constant current equal to 40 A.The experimental results show that,for arc durations shorter than 60 μs,the transfer of metal from the anode to the cathode occurs,but after passing this stage,when the two electrodes are separated by greater distances,each will display erosion.This is the result of the diffusion of material outside the space between the two electrodes.In order to interpret these results,we have applied a classical model of the physical phenomena occurring at the root of the arc.Analysis of the experimental results shows that for an arc duration of less than15 μs,no distinct cathode root is seen to exist,but beyond this,several spots appear gradually on the cathode for arc duration up to 50 μs,after which they merge into a single spot.The comparison between experiment results and theoretical interpretation is reasonable up to 60 μs.展开更多
In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current–voltage（I–V –T） characteristics of a Schottky barrier diode fabricated on free...In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current–voltage（I–V –T） characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to-150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer.A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I–V curves is obtained.展开更多
In this work,we discuss the origin of several anomalies present in the point-contact Andreev reflection spectra of（Li1-xFex）OHFeSe,LiTi2O4,and La2-xCexCuO4.While these features are similar to those stemming from int...In this work,we discuss the origin of several anomalies present in the point-contact Andreev reflection spectra of（Li1-xFex）OHFeSe,LiTi2O4,and La2-xCexCuO4.While these features are similar to those stemming from intrinsic superconducting properties,such as Andreev reflection,electron-boson coupling,multigap superconductivity,d-wave and p-wave pairing symmetry,they cannot be accounted for by the modified Blonder–Tinkham–Klapwijk（BTK） model,but require to consider critical current effects arising from the junction geometry.Our results point to the importance of tracking the evolution of the dips and peaks in the differential conductance as a function of the bias voltage,in order to correctly deduce the properties of the superconducting state.展开更多
With the continuous development of industrial technology, the weak current plays an increasingly important role in all fields of life. In order to facilitate the user to carry, the study of contactless weak current me...With the continuous development of industrial technology, the weak current plays an increasingly important role in all fields of life. In order to facilitate the user to carry, the study of contactless weak current measurement technology is also emerging. This article’s design idea is based on two-dimensional reluctance sensor device built non-contact weak current detection system. The system uses the reluctance sensor HMC1002 to collect the current signal and the temperature sensor DS18B20 to compensate the temperature. The signals collected by the reluctance sensor and the temperature sensor are extremely weak. After being amplified by the amplifying circuit, the signal is conducive to subsequent detection and processing. Filter circuit can filter out interference signals to achieve the goal of improving accuracy. After the corresponding algorithm of the microcontroller will convert the signal voltage, easy to read and store, thus designing a non-contact current measurement capable of detecting weak currents and achieving higher accuracy.展开更多
针对断路器机械特性异常诊断中的多源信号采集与分析问题,设计出一套分合闸线圈电流和触头行程信号的采集系统,并提出了相应的异常模拟方案。通过引入分段滤波和循环差分判别进行特征提取,机器学习算法采用CatBoost模型进行单源信号的...针对断路器机械特性异常诊断中的多源信号采集与分析问题,设计出一套分合闸线圈电流和触头行程信号的采集系统,并提出了相应的异常模拟方案。通过引入分段滤波和循环差分判别进行特征提取,机器学习算法采用CatBoost模型进行单源信号的异常诊断,结合遗传算法(genetic algorithm,GA)进行参数优化,实现了基于线圈电流和触头行程的高准确率诊断。同时,利用线性判别分析(linear discriminant analysis,LDA)方法进行特征融合,提升了异常诊断效果。此外,对多种融合方法的诊断结果进行对比分析。结果表明,LDA-GA-CatBoost的特征级融合方法与基于改进的D-S证据理论(dempster-shafer theory of evidence,DST)的决策级融合方法的异常诊断率最高,均为95.82%,但LDA-GA-CatBoost的模型训练时间仅为改进的D-S证据理论的一半,更具有应用优势。展开更多
Micromagnetic simulation is employed to study the gyration motion of magnetic vortices in distinct permalloy nanodisks driven by a spin-polarized current. The critical current density for magnetic vortex gyration, eig...Micromagnetic simulation is employed to study the gyration motion of magnetic vortices in distinct permalloy nanodisks driven by a spin-polarized current. The critical current density for magnetic vortex gyration, eigenfrequency, trajectory, velocity and the time for a magnetic vortex to obtain the steady gyration are analyzed. Simulation results reveal that the magnetic vortices in larger and thinner nanodisks can achieve a lower-frequency gyration at a lower current density in a shorter time. However, the magnetic vortices in thicker nanodisks need a higher current density and longer time to attain steady gyration but with a higher eigenfrequency. We also find that the point-contact position exerts different influences on these parameters in different nanodisks, which contributes to the control of the magnetic vortex gyration. The conclusions of this paper can serve as a theoretical basis for designing nano-oscillators and microwave frequency modulators.展开更多
This paper introduces the configuration and the operation principles of a high power direct current circuit breaker （DCCB）. The commutating current principle of the breaker is described in details with its theory an...This paper introduces the configuration and the operation principles of a high power direct current circuit breaker （DCCB）. The commutating current principle of the breaker is described in details with its theory and simulation analysis. The test results presented show that the DCCB meets the requirements for quenching protection. It will be used as the main breaker for quench protection in EAST.展开更多
The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on...The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on M （M = Ag,Au,Ta） substrate. Compared with the corresponding free-standing monolayer SnSe, the adsorbed SnSe undergoes a semiconductor- to-metal transition. The potential difference AV indicates that SnSefra contact is the best candidate for the Schottky contact of the three SnSe/M contacts. Two types of current-in-plane （CIP） structure, where a freestanding monolayer SnSe is con- nected to SnSe/M, are identified as the n-type CIP structure in SnSe/Ag contact and p-type CIP structure in SnSe/Au and SnSe/Ta contact. The results can stimulate further investigation for the multifunctional SnSe/metal contact.展开更多
The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and ...The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission （TE） theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49 × 10^7 cm^-2.展开更多
The physical mechanisms of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures by laser annealing and rapid thermal annealing are systematically investigated. The microstructures indicate that a better surface mo...The physical mechanisms of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures by laser annealing and rapid thermal annealing are systematically investigated. The microstructures indicate that a better surface morphology and an intact contact interface are formed after laser annealing. None of the TiN alloy spikes are formed at the interface of the laser annealing sample. The experimental results show that the current transport mechanism through the ohmic contact after laser annealing is different from the conventional spike mechanism, and it is dominated by thermionic field emission.展开更多
In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained fr...In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current （AC） resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage （VDs） less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.展开更多
This work addresses the critical issue of current density distribution in the sliding electrical contact interface based on electromechanical coupling, which is essential for minimizing damage and enhancing performanc...This work addresses the critical issue of current density distribution in the sliding electrical contact interface based on electromechanical coupling, which is essential for minimizing damage and enhancing performance. Using electromechanical coupling analysis and finite element analysis (FEA), the effects of initial contact pressure, pulse current input, and armature speed on current density are examined. Key findings indicate that optimizing the convex rail and armature structures significantly reduces peak current density, improving uniformity and reducing damage. These optimizations enhance the efficiency, accuracy, and service life of sliding electrical contact interfaces, providing a theoretical foundation for designing more durable and efficient high-current-density applications.展开更多
文摘The erosion of silver contacts due to break arcs with length proportional to time and of variable duration has been measured by weighing the contacts following 5000 openings at a constant current equal to 40 A.The experimental results show that,for arc durations shorter than 60 μs,the transfer of metal from the anode to the cathode occurs,but after passing this stage,when the two electrodes are separated by greater distances,each will display erosion.This is the result of the diffusion of material outside the space between the two electrodes.In order to interpret these results,we have applied a classical model of the physical phenomena occurring at the root of the arc.Analysis of the experimental results shows that for an arc duration of less than15 μs,no distinct cathode root is seen to exist,but beyond this,several spots appear gradually on the cathode for arc duration up to 50 μs,after which they merge into a single spot.The comparison between experiment results and theoretical interpretation is reasonable up to 60 μs.
文摘In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current–voltage（I–V –T） characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to-150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer.A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I–V curves is obtained.
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2015CB921000,2016YFA0300301,and 2017YFA0302902)the National Natural Science Foundation of China(Grant Nos.11674374 and 1474338)+5 种基金the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(Grant No.QYZDB-SSW-SLH008)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant Nos.XDB07020100 and XDB07030200)the Beijing Municipal Science and Technology Project(Grant No.Z161100002116011)the Fonds de la Recherche Scientifique–FNRS and the ARC Grant 13/18-08 for Concerted Research Actions,financed by the French Community of Belgium(Wallonia-Brussels Federation)Jérémy Brisbois acknowledges the support from F.R.S.–FNRS(Research Fellowship)The work of Alejandro V Silhanek is partially supported by PDR T.0106.16 of the F.R.S.–FNRS
文摘In this work,we discuss the origin of several anomalies present in the point-contact Andreev reflection spectra of（Li1-xFex）OHFeSe,LiTi2O4,and La2-xCexCuO4.While these features are similar to those stemming from intrinsic superconducting properties,such as Andreev reflection,electron-boson coupling,multigap superconductivity,d-wave and p-wave pairing symmetry,they cannot be accounted for by the modified Blonder–Tinkham–Klapwijk（BTK） model,but require to consider critical current effects arising from the junction geometry.Our results point to the importance of tracking the evolution of the dips and peaks in the differential conductance as a function of the bias voltage,in order to correctly deduce the properties of the superconducting state.
文摘With the continuous development of industrial technology, the weak current plays an increasingly important role in all fields of life. In order to facilitate the user to carry, the study of contactless weak current measurement technology is also emerging. This article’s design idea is based on two-dimensional reluctance sensor device built non-contact weak current detection system. The system uses the reluctance sensor HMC1002 to collect the current signal and the temperature sensor DS18B20 to compensate the temperature. The signals collected by the reluctance sensor and the temperature sensor are extremely weak. After being amplified by the amplifying circuit, the signal is conducive to subsequent detection and processing. Filter circuit can filter out interference signals to achieve the goal of improving accuracy. After the corresponding algorithm of the microcontroller will convert the signal voltage, easy to read and store, thus designing a non-contact current measurement capable of detecting weak currents and achieving higher accuracy.
文摘针对断路器机械特性异常诊断中的多源信号采集与分析问题,设计出一套分合闸线圈电流和触头行程信号的采集系统,并提出了相应的异常模拟方案。通过引入分段滤波和循环差分判别进行特征提取,机器学习算法采用CatBoost模型进行单源信号的异常诊断,结合遗传算法(genetic algorithm,GA)进行参数优化,实现了基于线圈电流和触头行程的高准确率诊断。同时,利用线性判别分析(linear discriminant analysis,LDA)方法进行特征融合,提升了异常诊断效果。此外,对多种融合方法的诊断结果进行对比分析。结果表明,LDA-GA-CatBoost的特征级融合方法与基于改进的D-S证据理论(dempster-shafer theory of evidence,DST)的决策级融合方法的异常诊断率最高,均为95.82%,但LDA-GA-CatBoost的模型训练时间仅为改进的D-S证据理论的一半,更具有应用优势。
基金Project supported by the Thirteenth Five-Year Program for Science and Technology of Education Department of Jilin Province,China(Grant No.JJKH20191007KJ)the Program for Development of Science and Technology of Siping City,China(Grant No.2016063)
文摘Micromagnetic simulation is employed to study the gyration motion of magnetic vortices in distinct permalloy nanodisks driven by a spin-polarized current. The critical current density for magnetic vortex gyration, eigenfrequency, trajectory, velocity and the time for a magnetic vortex to obtain the steady gyration are analyzed. Simulation results reveal that the magnetic vortices in larger and thinner nanodisks can achieve a lower-frequency gyration at a lower current density in a shorter time. However, the magnetic vortices in thicker nanodisks need a higher current density and longer time to attain steady gyration but with a higher eigenfrequency. We also find that the point-contact position exerts different influences on these parameters in different nanodisks, which contributes to the control of the magnetic vortex gyration. The conclusions of this paper can serve as a theoretical basis for designing nano-oscillators and microwave frequency modulators.
基金supported by the National Meg-Science Project of the Chinese Government
文摘This paper introduces the configuration and the operation principles of a high power direct current circuit breaker （DCCB）. The commutating current principle of the breaker is described in details with its theory and simulation analysis. The test results presented show that the DCCB meets the requirements for quenching protection. It will be used as the main breaker for quench protection in EAST.
基金supported by the National Natural Science Foundation of China(Grant Nos.U1304518 and U1404109)
文摘The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on M （M = Ag,Au,Ta） substrate. Compared with the corresponding free-standing monolayer SnSe, the adsorbed SnSe undergoes a semiconductor- to-metal transition. The potential difference AV indicates that SnSefra contact is the best candidate for the Schottky contact of the three SnSe/M contacts. Two types of current-in-plane （CIP） structure, where a freestanding monolayer SnSe is con- nected to SnSe/M, are identified as the n-type CIP structure in SnSe/Ag contact and p-type CIP structure in SnSe/Au and SnSe/Ta contact. The results can stimulate further investigation for the multifunctional SnSe/metal contact.
基金supported by the National Natural Science Foundation of China(Grant No.61334002)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory of China(Grant No.ZHD201206)
文摘The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission （TE） theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49 × 10^7 cm^-2.
基金supported by the National Natural Science Foundation of China(Grant Nos.51577169 and 51777187)the National Key Research and Development Program of China(Grant No.2017YFB0402804)
文摘The physical mechanisms of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures by laser annealing and rapid thermal annealing are systematically investigated. The microstructures indicate that a better surface morphology and an intact contact interface are formed after laser annealing. None of the TiN alloy spikes are formed at the interface of the laser annealing sample. The experimental results show that the current transport mechanism through the ohmic contact after laser annealing is different from the conventional spike mechanism, and it is dominated by thermionic field emission.
基金Project supported by the National Grand Fundamental Research 973 Program of China (Grant No. 2010CB327704)the National Natural Science Foundation of China (Grant Nos. 10974013 and 60978060)+3 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090009110027)the Natural Science Foundation of Beijing,China (Grant No. 1102028)the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60825407)Beijing Municipal Science and Technology Commission (Grant No. Z090803044009001)
文摘In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current （AC） resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage （VDs） less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.
文摘This work addresses the critical issue of current density distribution in the sliding electrical contact interface based on electromechanical coupling, which is essential for minimizing damage and enhancing performance. Using electromechanical coupling analysis and finite element analysis (FEA), the effects of initial contact pressure, pulse current input, and armature speed on current density are examined. Key findings indicate that optimizing the convex rail and armature structures significantly reduces peak current density, improving uniformity and reducing damage. These optimizations enhance the efficiency, accuracy, and service life of sliding electrical contact interfaces, providing a theoretical foundation for designing more durable and efficient high-current-density applications.
