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Prioritized Random Access Based on Compute-and-Forward
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作者 Xu Yu Cui Chen Guo Qing 《China Communications》 2025年第4期254-267,共14页
In wireless networks,the prioritized transmission scheme is essential for accommodating different priority classes of users sharing a common channel.In this paper,we propose a prioritized random access scheme based on... In wireless networks,the prioritized transmission scheme is essential for accommodating different priority classes of users sharing a common channel.In this paper,we propose a prioritized random access scheme based on compute-and-forward,referred to as expanding window sign-compute diversity slotted ALOHA(EW-SCDSA).We improve the expanding window technique and apply it to a high-throughput random access scheme,i.e.,the signcompute diversity slotted ALOHA(SCDSA)scheme,to implement prioritized random access.We analyze the probability of user resolution in each priority class utilizing a bipartite graph and derive the corresponding lower bounds,the effectiveness of which is validated through simulation experiments.Simulation results demonstrate that the EW-SCDSA scheme can provide heterogeneous reliability performance for various user priority classes and significantly outperforms the existing advanced prioritized random access scheme. 展开更多
关键词 compute-and-forward diversity transmission prioritized transmission random access slotted ALOHA
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Materials,processes,devices and applications of magnetoresistive random access memory
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作者 Meiyin Yang Yan Cui +1 位作者 Jingsheng Chen Jun Luo 《International Journal of Extreme Manufacturing》 2025年第1期277-306,共30页
Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circ... Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circuits.Although MRAM has achieved mass production,its manufacturing process still remains challenging,resulting in only a few semiconductor companies dominating its production.In this review,we delve into the materials,processes,and devices used in MRAM,focusing on both the widely adopted spin transfer torque MRAM and the next-generation spin-orbit torque MRAM.We provide an overview of their operational mechanisms and manufacturing technologies.Furthermore,we outline the major hurdles faced in MRAM manufacturing and propose potential solutions in detail.Then,the applications of MRAM in artificial intelligent hardware are introduced.Finally,we present an outlook on the future development and applications of MRAM. 展开更多
关键词 spin transfer torque-magnetoresistive random access memory(STT-MRAM) spin-orbit torque(SOT)MRAM materials for MRAM field-free writing of SOT-MRAM MRAM process artificial intelligence
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Recovery of single event upset in advanced complementary metal-oxide semiconductor static random access memory cells 被引量:4
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作者 Qin Jun-Rui Chen Shu-Ming +1 位作者 Liang Bin Liu Bi-Wei 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第2期624-628,共5页
Using computer-aided design three-dimensional (3D) simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi... Using computer-aided design three-dimensional (3D) simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer (LET) threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability. 展开更多
关键词 single event upset multi-node charge collection static random access memory angulardependence
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Pilot Domain NOMA for Grant-Free Massive Random Access in Massive MIMO Marine Communication System 被引量:4
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作者 Yongxin Liu Ming Zhao +1 位作者 Limin Xiao Shidong Zhou 《China Communications》 SCIE CSCD 2020年第6期131-144,共14页
We propose a pilot domain non-orthogonal multiple access(NOMA)for uplink massive devices grant-free random access scenarios in massive multiple-input multiple-output(MIMO)maritime communication systems.These scenarios... We propose a pilot domain non-orthogonal multiple access(NOMA)for uplink massive devices grant-free random access scenarios in massive multiple-input multiple-output(MIMO)maritime communication systems.These scenarios are characterized by numerous devices with sporadic access behavior,and therefore only a subset of them are active.Due to massive potential devices in the network,it is infeasible to assign a unique orthogonal pilot to each device in advance.In such scenarios,pilot decontamination is a crucial problem.In this paper,the devices are randomly assigned non-orthogonal pilots which are constructed by a linear combination of some orthogonal pilots.We show that a bipartite graph can conveniently describe the interference cancellation(IC)processes of pilot decontamination.High spectrum efficiency(SE)and low outage probability can be obtained by selecting the numbers of orthogonal pilots according to the given probability distribution.Numerical evaluatioDs show that the proposed pilot domain NOMA decreases the outage probability from 20%to 2 e-12 at the SE of 4 bits/s/Hz for a single device,compared to the conventional method of slotted ALOHA with 1024 antennas at the BS,or increases the spectrum efficiency from 1.2 bits/s/Hz to 4 bit/s/Hz at the outage probability of2 e-12 in contrast with the Welch bound equality(WBE)non-orthogonal pilots. 展开更多
关键词 NOMA grant-free random access maritime-communication bipartite graphs density evolution
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Performance Characterization and Receiver Design for Random Temporal Multiple Access in Non-Coordinated Networks 被引量:1
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作者 Yin Lu Jun Fang +1 位作者 Zhong Guo J.Andrew Zhang 《China Communications》 SCIE CSCD 2019年第6期173-184,共12页
Random access is a well-known multiple access method for uncoordinated communication nodes.Existing work mainly focuses on optimizing iterative access protocols,assuming that packets are corrupted once they are collid... Random access is a well-known multiple access method for uncoordinated communication nodes.Existing work mainly focuses on optimizing iterative access protocols,assuming that packets are corrupted once they are collided,or that feedback is available and can be exploited.In practice,a packet may still be able to be recovered successfully even when collided with other packets.System design and performance analysis under such a situation,particularly when the details of collision are taken into consideration,are less known.In this paper,we provide a framework for analytically evaluating the actual detection performance in a random temporal multiple access system where nodes can only transmit.Explicit expressions are provided for collision probability and signal to interference and noise ratio(SINR)when different numbers of packets are collided.We then discuss and compare two receiver options for the AP,and provide detailed receiver design for the premium one.In particular,we propose a synchronization scheme which can largely reduce the preamble length.We also demonstrate that system performance could be a convex function of preamble length both analytically and via simulation,as well as the forward error correction(FEC)coding rate. 展开更多
关键词 random TEMPORAL multiple access non-coordination NETWORKS packet COLLISION
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An Improved Random Access Scheme for M2M Communications 被引量:2
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作者 Yali Wu Guixia Kang +2 位作者 Yanyan Guo Xia Zhu Ningbo Zhang 《China Communications》 SCIE CSCD 2016年第6期12-21,共10页
In this study, an improved random access(RA) scheme for Machine-to-Machine(M2M) communications is proposed. The improved RA scheme is realized by two steps. First, the improved RA scheme achieves a reasonable resource... In this study, an improved random access(RA) scheme for Machine-to-Machine(M2M) communications is proposed. The improved RA scheme is realized by two steps. First, the improved RA scheme achieves a reasonable resource tradeoff between physical random access channel(PRACH) and physical uplink shared channel(PUSCH). To realize a low-complexity resource allocation between PRACH and PUSCH, a boundary of traffic load is derived to divide the number of active M2 M users(UEs) into multiple intervals. The corresponding resource allocation for these intervals is determined by e NB. Then the resource allocation for other number of UEs can be obtained from the allocation of these intervals with less computation. Second, the access barring on arrival rate of new UEs is introduced in the improved RA scheme to reduce the expected delay. Numerical results show that the proposed improved RA scheme can realize a low-complexity resource allocation between PRACH and PUSCH. Meanwhile, the expected delay can be effectively reduced by access barring on arriving rate of new M2 M UEs. 展开更多
关键词 machine-to-machine communications random access success access resource allocation
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Design, analysis and optimization of random access inter-satellite ranging system 被引量:3
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作者 XU Xiaoyi WANG Chunhui JIN Zhonghe 《Journal of Systems Engineering and Electronics》 SCIE EI CSCD 2020年第5期871-883,共13页
In this paper, a random access inter-satellite ranging(RAISR) system is designed. The ranging accuracy is optimized by an algorithm to greatly improve the ranging accuracy. This paper verifies the feasibility of the R... In this paper, a random access inter-satellite ranging(RAISR) system is designed. The ranging accuracy is optimized by an algorithm to greatly improve the ranging accuracy. This paper verifies the feasibility of the RAISR system through a series of theoretical analysis, numerical simulation, hardware system design and testing. The research work brings the solution to the design and accuracy optimization problem of the RAISR system,which eliminates the main error caused by the satellite dynamic characteristics and frequency source drift of the RAISR system.The accuracy of the measurement system has been significantly improved. 展开更多
关键词 satellite ranging random access distributed network
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Random Access and Resource Allocation for the Coexistence of NOMA-Based and OMA-Based M2M Communications 被引量:2
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作者 Yali Wu Guixia Kang Ningbo Zhang 《China Communications》 SCIE CSCD 2017年第6期43-53,共11页
In the future fifth generation(5G) systems,non-orthogonal multiple access(NOMA) is a promising technology that can greatly enhance the network capacity compared to orthogonal multiple access(OMA) .In this paper,we pro... In the future fifth generation(5G) systems,non-orthogonal multiple access(NOMA) is a promising technology that can greatly enhance the network capacity compared to orthogonal multiple access(OMA) .In this paper,we propose a novel random access(RA) and resource allocation scheme for the coexistence of NOMA-based and OMAbased machine-to-machine(M2M) communications,which aims at improving the number of successful data packet transmissions and guaranteeing the quality of service(Qo S) (e.g.,the minimum data rate requirement) for M2 M communications.The algorithm of joint user equipment(UE) paring and power allocation is proposed for the coexisting RA(i.e.,the coexistence of NOMA-based RA and OMA-based RA) .The resource allocation for the coexisting RA is investigated,thus improving the number of successful data packet transmissions by more efficiently using the radio resources.Simulation results demonstrate that the proposed RA and resource allocation scheme outperforms the conventional RA in terms of the number of successful data packet transmissions,thus is a promising technology in future M2 M communications. 展开更多
关键词 machine-to-machine communications random access non-orthogonal multiple access user equipment paring power allocation resource allocation
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Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer 被引量:1
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作者 苏帅 鉴肖川 +5 位作者 王芳 韩叶梅 田雨仙 王晓旸 张宏智 张楷亮 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第10期368-372,共5页
In this letter,the Ta/HfO/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each.The reset current is reduced for the HfO/BN bilayer device compared with that... In this letter,the Ta/HfO/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each.The reset current is reduced for the HfO/BN bilayer device compared with that for the Ta/HfO/TiN structure.Furthermore,the reset current decreases with increasing BN thickness.The HfOlayer is a dominating switching layer,while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode.The current conduction mechanism of low resistance state in the HfO/BN bilayer device is space-chargelimited current(SCLC),while it is Ohmic conduction in the HfOdevice. 展开更多
关键词 resistive random access memory(RRAM) low-power consumption UNIFORMITY HfO_x
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Si1Sb2Te3 phase change material for chalcogenide random access memory 被引量:1
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作者 张挺 宋志棠 +3 位作者 刘波 刘卫丽 封松林 陈邦明 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第8期2475-2478,共4页
This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous pha... This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well. 展开更多
关键词 phase change chalcogenide random access memory Si-Sb-Te
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Delay-Optimal Random Access in Large-Scale Energy Harvesting IoT Networks Based on Mean Field Game 被引量:2
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作者 Dezhi Wang Wei Wang +1 位作者 Zhaoyang Zhang Aiping Huang 《China Communications》 SCIE CSCD 2022年第4期121-136,共16页
With energy harvesting capability, the Internet of things(IoT) devices transmit data depending on their available energy, which leads to a more complicated coupling and brings new technical challenges to delay optimiz... With energy harvesting capability, the Internet of things(IoT) devices transmit data depending on their available energy, which leads to a more complicated coupling and brings new technical challenges to delay optimization. In this paper,we study the delay-optimal random access(RA) in large-scale energy harvesting IoT networks. We model a two-dimensional Markov decision process(MDP)to address the coupling between the data and energy queues, and adopt the mean field game(MFG) theory to reveal the coupling among the devices by utilizing the large-scale property. Specifically, to obtain the optimal access strategy for each device, we derive the Hamilton-Jacobi-Bellman(HJB) equation which requires the statistical information of other devices.Moreover, to model the evolution of the states distribution in the system, we derive the Fokker-PlanckKolmogorov(FPK) equation based on the access strategy of devices. By solving the two coupled equations,we obtain the delay-optimal random access solution in an iterative manner with Lax-Friedrichs method. Finally, the simulation results show that the proposed scheme achieves significant performance gain compared with the conventional schemes. 展开更多
关键词 wireless communications energy harvesting random access mean field game
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Universal memory based on phase-change materials:From phase-change random access memory to optoelectronic hybrid storage 被引量:2
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作者 Bo Liu Tao Wei +5 位作者 Jing Hu Wanfei Li Yun Ling Qianqian Liu Miao Cheng Zhitang Song 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第5期128-149,共22页
The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods,which constitute an insurmountable challenge for existing data centers.At present,... The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods,which constitute an insurmountable challenge for existing data centers.At present,computing devices use the von Neumann architecture with separate computing and memory units,which exposes the shortcomings of“memory bottleneck”.Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this bottleneck.Phase-change random access memory(PCRAM)is called one of the best solutions for next generation non-volatile memory.Due to its high speed,good data retention,high density,low power consumption,PCRAM has the broad commercial prospects in the in-memory computing application.In this review,the research progress of phase-change materials and device structures for PCRAM,as well as the most critical performances for a universal memory,such as speed,capacity,and power consumption,are reviewed.By comparing the advantages and disadvantages of phase-change optical disk and PCRAM,a new concept of optoelectronic hybrid storage based on phase-change material is proposed.Furthermore,its feasibility to replace existing memory technologies as a universal memory is also discussed as well. 展开更多
关键词 universal memory optoelectronic hybrid storage phase-change material phase-change random access memory
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Total ionizing dose and synergistic effects of magnetoresistive random-access memory 被引量:9
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作者 Xing-Yao Zhang Qi Guo +1 位作者 Yu-Dong Li Lin Wen 《Nuclear Science and Techniques》 SCIE CAS CSCD 2018年第8期136-140,共5页
A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,fr... A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,from which the total ionizing dose(TID) and the synergistic damage mechanism of MRAM were analyzed.In addition,DC,AC,and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system.The radiation-sensitive parameters were obtained through analyzing the data.Because of the magnetic field applied on the MRAM while testing the synergistic effects,shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID,and hence radiation damage of the synergistic effects was also lower. 展开更多
关键词 随机存取 剂量 电离 记忆 集成电路测试 MRAM TID 存储器
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Perpendicular magnetic tunnel junction and its application in magnetic random access memory 被引量:1
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作者 刘厚方 Syed Shahbaz Ali 韩秀峰 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第7期13-21,共9页
Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy (PMA) are introduced. ... Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy (PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered (Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory. 展开更多
关键词 magnetic random access memory perpendicular magnetic anisotropy spin transfer torque effect magnetic tunnel junction
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Three-Dimensional Simulations of RESET Operation in Phase-Change Random Access Memory with Blade-Type Like Phase Change Layer by Finite Element Modeling 被引量:2
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作者 金秋雪 刘波 +8 位作者 刘燕 王维维 汪恒 许震 高丹 王青 夏洋洋 宋志棠 封松林 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第9期128-131,共4页
An optimized device structure for reducing the RESET current of phase-change random access memory (PCRAM) with blade-type like (BTL) phase change layer is proposed. The electrical thermal analysis of the BTL cell ... An optimized device structure for reducing the RESET current of phase-change random access memory (PCRAM) with blade-type like (BTL) phase change layer is proposed. The electrical thermal analysis of the BTL cell and the blade heater contactor structure by three-dimensional finite element modeling are compared with each other during RESET operation. The simulation results show that the programming region of the phase change layer in the BTL cell is much smaller, and thermal electrical distributions of the BTL cell are more concentrated on the TiN/GST interface. The results indicate that the BTL cell has the superiorities of increasing the heating efficiency, decreasing the power consumption and reducing the RESET current from 0.67mA to 0.32mA. Therefore, the BTL cell will be appropriate for high performance PCRAM device with lower power consumption and lower RESET current. 展开更多
关键词 PCRAM cell RESET Three-Dimensional Simulations of RESET Operation in Phase-Change random access Memory with Blade-Type Like Phase Change Layer by Finite Element Modeling of by in with
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Catalyzing Random Access at Physical Layer for Internet of Things:An Intelligence Enabled User Signature Code Acquisition Approach 被引量:1
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作者 Xiaojie Fang Xinyu Yin +2 位作者 Xuejun Sha Jinghui Qiu Hongli Zhang 《China Communications》 SCIE CSCD 2021年第10期181-192,共12页
Exploiting random access for the underlying connectivity provisioning has great potential to incorporate massive machine-type communication(MTC)devices in an Internet of Things(Io T)network.However,massive access atte... Exploiting random access for the underlying connectivity provisioning has great potential to incorporate massive machine-type communication(MTC)devices in an Internet of Things(Io T)network.However,massive access attempts from versatile MTC devices may bring congestion to the IIo T network,thereby hindering service increasing of IIo T applications.In this paper,an intelligence enabled physical(PHY-)layer user signature code acquisition(USCA)algorithm is proposed to overcome the random access congestion problem with reduced signaling and control overhead.In the proposed scheme,the detector aims at approximating the optimal observation on both active user detection and user data reception by iteratively learning and predicting the convergence of the user signature codes that are in active.The crossentropy based low-complexity iterative updating rule is present to guarantee that the proposed USCA algorithm is computational feasible.A closed-form bit error rate(BER)performance analysis is carried out to show the efficiency of the proposed intelligence USCA algorithm.Simulation results confirm that the proposed USCA algorithm provides an inherent tradeoff between performance and complexity and allows the detector achieves an approximate optimal performance with a reasonable computational complexity. 展开更多
关键词 Internet of Things(IoT) artificial intelligence physical layer CROSS-ENTROPY random access
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Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices 被引量:4
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作者 崔岩 杨玲 +2 位作者 高腾 李博 罗家俊 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第8期444-449,共6页
The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories(MRAMs) with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor(CMOS) process respectively and different magnetic tunneling j... The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories(MRAMs) with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor(CMOS) process respectively and different magnetic tunneling junctions(MTJs) are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad(Si) in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application. 展开更多
关键词 magnetoresistive random-access memories total ionizing dose effect magnetic tunneling junction magnetic Compton scattering effect
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Robustness self-testing of states and measurements in the prepare-and-measure scenario with 3 → 1 random access code
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作者 Shi-Hui Wei Fen-Zhuo Guo +1 位作者 Xin-Hui Li Qiao-Yan Wen 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第7期144-151,共8页
Recently, Tavakoli et al.proposed a self-testing scheme in the prepare-and-measure scenario, showing that self-testing is not necessarily based on entanglement and violation of a Bell inequality [Phys.Rev.A 98 062307(... Recently, Tavakoli et al.proposed a self-testing scheme in the prepare-and-measure scenario, showing that self-testing is not necessarily based on entanglement and violation of a Bell inequality [Phys.Rev.A 98 062307(2018)].They realized the self-testing of preparations and measurements in an N → 1(N ≥ 2) random access code(RAC), and provided robustness bounds in a 2 → 1 RAC.Since all N → 1 RACs with shared randomness are combinations of 2 → 1 and 3 → 1 RACs, the3 → 1 RAC is just as important as the 2 → 1 RAC.In this paper, we find a set of preparations and measurements in the3 → 1 RAC, and use them to complete the robustness self-testing analysis in the prepare-and-measure scenario.The method is robust to small but inevitable experimental errors. 展开更多
关键词 ROBUSTNESS SELF-TESTING prepare-and-measure SCENARIO 3 1 random access CODE
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Improved Method of Contention-Based Random Access in LTE System
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作者 Han-Song Su Min Zhang Gao-Hua Liu 《Journal of Electronic Science and Technology》 CAS CSCD 2018年第2期175-183,共9页
Random access is the necessary process to establish the wireless link between the user equipment (UE) and network. The performance of the random access directly affects the performance of the network. In this work, ... Random access is the necessary process to establish the wireless link between the user equipment (UE) and network. The performance of the random access directly affects the performance of the network. In this work, we propose a method on the basis of the existing alternatives. In this method, we estimate the system load in advance to adjust the number of terminals. An access threshold is set to control the number of terminals which want to access the base station at an acceptable level. At the same time, we havean improvement on the existing power climbing strategy. We suppose that the power ramping is not always necessary for the re-access. And the selection ofpower ramping steps is studied in this paper. Simulations based on MATLAB are employed to evaluate the effectiveness of the proposed solution and to make comparisons with existing alternatives. 展开更多
关键词 access threshold long-term evolution(LTE) power ramping steps random access
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Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers
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作者 赖云锋 陈凡 +3 位作者 曾泽村 林培杰 程树英 俞金玲 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第8期411-416,共6页
As an industry accepted storage scheme, hafnium oxide(HfO_x) based resistive random access memory(RRAM)should further improve its thermal stability and data retention for practical applications. We therefore fabri... As an industry accepted storage scheme, hafnium oxide(HfO_x) based resistive random access memory(RRAM)should further improve its thermal stability and data retention for practical applications. We therefore fabricated RRAMs with HfO_x/ZnO double-layer as the storage medium to study their thermal stability as well as data retention. The HfO_x/ZnO double-layer is capable of reversible bipolar switching under ultralow switching current(〈 3 μA) with a Schottky emission dominant conduction for the high resistance state and a Poole–Frenkel emission governed conduction for the low resistance state. Compared with a drastically increased switching current at 120℃ for the single HfO_x layer RRAM, the HfO_x/ZnO double-layer exhibits excellent thermal stability and maintains neglectful fluctuations in switching current at high temperatures(up to 180℃), which might be attributed to the increased Schottky barrier height to suppress current at high temperatures. Additionally, the HfO_x/ZnO double-layer exhibits 10-year data retention @85℃ that is helpful for the practical applications in RRAMs. 展开更多
关键词 resistive random access memory (RRAM) thermal stability data retention double layer
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