Amorphous NbS_(2)was proposed as the resistive switching(RS)layer for conductive-bridge random access memory(CBRAM)for the first time,with Cu and Au as the top and bottom electrodes,respectively.NbS_(2)films were prep...Amorphous NbS_(2)was proposed as the resistive switching(RS)layer for conductive-bridge random access memory(CBRAM)for the first time,with Cu and Au as the top and bottom electrodes,respectively.NbS_(2)films were prepared at room temperature,which exhibited an amorphous structure and did not crystalize even annealed at 500°C,showing good thermal stability.The amorphous NbS_(2)CBRAM devices present stable bipolar non-volatile RS characteristics.Repetitive RS behavior is demonstrated in amorphous NbS_(2)CBRAMs.The operating voltage during all RS cycles is less than 1 V,demonstrating that the NbS_(2)CBRAM is a low-operation voltage memory device.The distribution of the high and low resistive state resistance is relatively concentrated,and the on-off ratio has been kept above 100,offering a sufficient data read/write window.The formation and fracture of the Cu metal conductive filament is considered to be the RS mechanism by analyzing the dependence of current and voltage in logarithmic coordinates.Our study demonstrated that amorphous NbS_(2)is a promising material for lowoperation voltage CBRAM.展开更多
Chalcogenide phase-change materials(PCMs),in particular,the flagship Ge2Sb2Te5(GST),are leading candidates for advanced memory applications.Yet,GST in conventional devices suffer from high power consumption,because th...Chalcogenide phase-change materials(PCMs),in particular,the flagship Ge2Sb2Te5(GST),are leading candidates for advanced memory applications.Yet,GST in conventional devices suffer from high power consumption,because the RESET operation requires melting of the crystalline GST phase.Recently,we have developed a conductive-bridge scheme for low-power phase-change application utilizing a self-decomposed Ge-Sb-O(GSO)alloy.In this work,we present thorough structural and electrical characterizations of GSO thin films by tailoring the concentration of oxygen in the phase-separating GSO system.We elucidate a two-step process in the as-deposited amorphous film upon the introduction of oxygen:with increasing oxygen doping level,germanium oxides form first,followed by antimony oxides.To enable the conductive-bridge switching mode for femtojoule-level RESET energy,the oxygen content should be sufficiently low to keep the antimony-rich domains easily crystallized under external electrical stimulus.Our work serves as a useful example to exploit alloy decomposition that develops heterogeneous PCMs,minimizing the active switching volume for low-power electronics.展开更多
基金supported by“Pioneer”and“Leading Goose”R&D Program of Zhejiang Province(Nos.2021C01SA 301612 and 2023C01235).
文摘Amorphous NbS_(2)was proposed as the resistive switching(RS)layer for conductive-bridge random access memory(CBRAM)for the first time,with Cu and Au as the top and bottom electrodes,respectively.NbS_(2)films were prepared at room temperature,which exhibited an amorphous structure and did not crystalize even annealed at 500°C,showing good thermal stability.The amorphous NbS_(2)CBRAM devices present stable bipolar non-volatile RS characteristics.Repetitive RS behavior is demonstrated in amorphous NbS_(2)CBRAMs.The operating voltage during all RS cycles is less than 1 V,demonstrating that the NbS_(2)CBRAM is a low-operation voltage memory device.The distribution of the high and low resistive state resistance is relatively concentrated,and the on-off ratio has been kept above 100,offering a sufficient data read/write window.The formation and fracture of the Cu metal conductive filament is considered to be the RS mechanism by analyzing the dependence of current and voltage in logarithmic coordinates.Our study demonstrated that amorphous NbS_(2)is a promising material for lowoperation voltage CBRAM.
基金The authors thank Miss Dan He and Miss Chenyu Liang at Instrument Analysis Center of Xi’an Jiaotong University for their assistance with Raman and XPS measurements.E M acknowledges the National Natural Science Foundation of China(Grant No.52150710545)The authors acknowledge the 111 project 2.0(BP2018008)the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies of XJTU.W Z and E M also acknowledge the support of XJTU for their work at CAID.X M acknowledges the National Natural Science Foundation of China(Grant No.62174060)and the funding for Hubei Key Laboratory of Advanced Memories.
文摘Chalcogenide phase-change materials(PCMs),in particular,the flagship Ge2Sb2Te5(GST),are leading candidates for advanced memory applications.Yet,GST in conventional devices suffer from high power consumption,because the RESET operation requires melting of the crystalline GST phase.Recently,we have developed a conductive-bridge scheme for low-power phase-change application utilizing a self-decomposed Ge-Sb-O(GSO)alloy.In this work,we present thorough structural and electrical characterizations of GSO thin films by tailoring the concentration of oxygen in the phase-separating GSO system.We elucidate a two-step process in the as-deposited amorphous film upon the introduction of oxygen:with increasing oxygen doping level,germanium oxides form first,followed by antimony oxides.To enable the conductive-bridge switching mode for femtojoule-level RESET energy,the oxygen content should be sufficiently low to keep the antimony-rich domains easily crystallized under external electrical stimulus.Our work serves as a useful example to exploit alloy decomposition that develops heterogeneous PCMs,minimizing the active switching volume for low-power electronics.
