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Electrolyte-gated transistors for neuromorphic applications 被引量:2
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作者 Heyi Huang Chen Ge +6 位作者 Zhuohui Liu Hai Zhong Erjia Guo Meng He Can Wang Guozhen Yang Kuijuan Jin 《Journal of Semiconductors》 EI CAS CSCD 2021年第1期77-89,共13页
Von Neumann computers are currently failing to follow Moore’s law and are limited by the von Neumann bottleneck.To enhance computing performance,neuromorphic computing systems that can simulate the function of the hu... Von Neumann computers are currently failing to follow Moore’s law and are limited by the von Neumann bottleneck.To enhance computing performance,neuromorphic computing systems that can simulate the function of the human brain are being developed.Artificial synapses are essential electronic devices for neuromorphic architectures,which have the ability to perform signal processing and storage between neighboring artificial neurons.In recent years,electrolyte-gated transistors(EGTs)have been seen as promising devices in imitating synaptic dynamic plasticity and neuromorphic applications.Among the various electronic devices,EGT-based artificial synapses offer the benefits of good stability,ultra-high linearity and repeated cyclic symmetry,and can be constructed from a variety of materials.They also spatially separate“read”and“write”operations.In this article,we provide a review of the recent progress and major trends in the field of electrolyte-gated transistors for neuromorphic applications.We introduce the operation mechanisms of electric-double-layer and the structure of EGT-based artificial synapses.Then,we review different types of channels and electrolyte materials for EGT-based artificial synapses.Finally,we review the potential applications in biological functions. 展开更多
关键词 electrolyte-gated transistors neuromorphic comupting artificial synapses
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