Extreme ultraviolet(EUV)lithography is crucial for advancing semiconductor manufacturing;however,current EUV light sources,such as laser-produced plasma(LPP),have significant limitations,including low energy-conversio...Extreme ultraviolet(EUV)lithography is crucial for advancing semiconductor manufacturing;however,current EUV light sources,such as laser-produced plasma(LPP),have significant limitations,including low energy-conversion efficiency and debris contamination.Various schemes,including optical free-electron laser undulators,have been studied to generate coherent EUV light.However,optical undulators suffer from limited focal lengths,which pose a significant challenge to achieving a higher gain.In this study,a novel approach is proposed that employs a stretched off-axis paraboloid(sOAP)mirror,thus extending the focus distance to the centimeter range while achieving a well-controlled periodic light field.This enables high-intensity 92-eV EUV sources to exceed 1016/s,as demonstrated in the simulations.The proposed setup provides an efficient and powerful solution for advanced applications including semiconductor lithography.展开更多
基金supported in part by the National Key R&D Program of China(No.2023YFA1606900)the National Natural Science Foundation of China(NSFC)(Nos.12235003 and 12447106).
文摘Extreme ultraviolet(EUV)lithography is crucial for advancing semiconductor manufacturing;however,current EUV light sources,such as laser-produced plasma(LPP),have significant limitations,including low energy-conversion efficiency and debris contamination.Various schemes,including optical free-electron laser undulators,have been studied to generate coherent EUV light.However,optical undulators suffer from limited focal lengths,which pose a significant challenge to achieving a higher gain.In this study,a novel approach is proposed that employs a stretched off-axis paraboloid(sOAP)mirror,thus extending the focus distance to the centimeter range while achieving a well-controlled periodic light field.This enables high-intensity 92-eV EUV sources to exceed 1016/s,as demonstrated in the simulations.The proposed setup provides an efficient and powerful solution for advanced applications including semiconductor lithography.
