In this paper, an efficient thermal analysis method is presented for large scale compound semiconductor integrated circuits based on a heterojunction bipolar transistor with considering the change of thermal conductiv...In this paper, an efficient thermal analysis method is presented for large scale compound semiconductor integrated circuits based on a heterojunction bipolar transistor with considering the change of thermal conductivity with temperature.The influence caused by the thermal conductivity can be equivalent to the increment of the local temperature surrounding the individual device. The junction temperature for each device can be efficiently calculated by the combination of the semianalytic temperature distribution function and the iteration of local temperature with high accuracy, providing a temperature distribution for a full chip. Applying this method to the InP frequency divider chip and the GaAs analog to digital converter chip, the computational results well agree with the results from the simulator COMSOL and the infrared thermal imager respectively. The proposed method can also be applied to thermal analysis in various kinds of semiconductor integrated circuits.展开更多
In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated...In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.展开更多
A combined PIXE-RBS channeling measurement system to examine Ⅲ-Ⅴ compound semiconductors has been established. Preliminary results on studying Si+ and Te+ implanted GaAs have been presented and discussed.
A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The ana...A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOSFET models are inherited. For core model derivation, a novel method is used to realize a direct application of the standard surfacepotentialmodelofMOSFETsforHEMTmodeling,withoutbreakingthemathematicstructure.Thehigh-order derivatives of I–V /C–V remain continuous, making the model suitable for RF large-signal applications. Furthermore, the self-heating effects and the transconductance dispersion are also modelled. The model has been verified through comparison with measured DC IV, Gummel symmetry test, CV, minimum noise figure, small-signal Sparameters up to 66 GHz and single-tone input power sweep at 29 GHz for a 475 m0.1 m InGaAs/GaAs power pHEMT, fabricated at a commercial foundry.展开更多
We report the synthesis and characterization of a Si-based ternary semiconductor Mg_(3)Si_(2)Te_(6),which exhibits a quasitwo-dimensional structure,where the trigonal Mg_(3)Si_(2)Te_(6)layers are separated by Mg ions....We report the synthesis and characterization of a Si-based ternary semiconductor Mg_(3)Si_(2)Te_(6),which exhibits a quasitwo-dimensional structure,where the trigonal Mg_(3)Si_(2)Te_(6)layers are separated by Mg ions.Ultraviolet-visible absorption spectroscopy and density functional theory calculations were performed to investigate the electronic structure.The experimentally determined direct band gap is 1.39 eV,consistent with the value of the density function theory calculations.Our results reveal that Mg_(3)Si_(2)Te_(6)is a direct gap semiconductor,which is a potential candidate for near-infrared optoelectronic devices.展开更多
Large grain, low-dislocation, high-quality single crystals of various Pb-salt compounds have been grown reproducibly by the Horizontal Unseeded Vapor Growth (HUVG) technique. The Tunable Diode Lasers with better perfo...Large grain, low-dislocation, high-quality single crystals of various Pb-salt compounds have been grown reproducibly by the Horizontal Unseeded Vapor Growth (HUVG) technique. The Tunable Diode Lasers with better performance have been made with such crystals. The annealing feature, dislocations and diffusion in the crystals have also been investigated.展开更多
This paper investigates the steady-state behavior of a semiconductor laser subject to arbitrary levels of external optical feedback by means of an iterative travelling-wave (ITW) model. Analytical expressions are deve...This paper investigates the steady-state behavior of a semiconductor laser subject to arbitrary levels of external optical feedback by means of an iterative travelling-wave (ITW) model. Analytical expressions are developed based on an iterative equation. We show that, as in good agreement with previous work, in the weak-feedback regime of operation except for a phase shift the ITW model will be simplified to the Lang-Kobayashi (LK) model, and that in the case where this phase shift is equal to zero the ITW model is identical to the LK model. The present work is of use in particular for distinguishing the coherence-collapse regime from the strong-feedback regime where low-intensity-noise and narrow-linewidth laser operation would be possible at high feedback levels with re-stabilization of the compound laser system.展开更多
基金Project supported by the Advance Research Foundation of China(Grant No.9140Axxx501)the National Defense Advance Research Project,China(Grant No.3151xxxx301)+1 种基金the Frontier Innovation Program,China(Grant No.48xx4)the 111 Project,China(Grant No.B12026)
文摘In this paper, an efficient thermal analysis method is presented for large scale compound semiconductor integrated circuits based on a heterojunction bipolar transistor with considering the change of thermal conductivity with temperature.The influence caused by the thermal conductivity can be equivalent to the increment of the local temperature surrounding the individual device. The junction temperature for each device can be efficiently calculated by the combination of the semianalytic temperature distribution function and the iteration of local temperature with high accuracy, providing a temperature distribution for a full chip. Applying this method to the InP frequency divider chip and the GaAs analog to digital converter chip, the computational results well agree with the results from the simulator COMSOL and the infrared thermal imager respectively. The proposed method can also be applied to thermal analysis in various kinds of semiconductor integrated circuits.
文摘In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.
文摘A combined PIXE-RBS channeling measurement system to examine Ⅲ-Ⅴ compound semiconductors has been established. Preliminary results on studying Si+ and Te+ implanted GaAs have been presented and discussed.
文摘A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOSFET models are inherited. For core model derivation, a novel method is used to realize a direct application of the standard surfacepotentialmodelofMOSFETsforHEMTmodeling,withoutbreakingthemathematicstructure.Thehigh-order derivatives of I–V /C–V remain continuous, making the model suitable for RF large-signal applications. Furthermore, the self-heating effects and the transconductance dispersion are also modelled. The model has been verified through comparison with measured DC IV, Gummel symmetry test, CV, minimum noise figure, small-signal Sparameters up to 66 GHz and single-tone input power sweep at 29 GHz for a 475 m0.1 m InGaAs/GaAs power pHEMT, fabricated at a commercial foundry.
基金the National Natural Science Foundation of China(Grant Nos.12174454,11904414,11904416,and 12104427)the Guangdong Basic and Applied Basic Research Foundation,China(Grant No.2021B1515120015)+1 种基金the Guangzhou Basic and Applied Basic Research Foundation(Grant No.202201011123)the National Key Research and Development Program of China(Grant No.2019YFA0705702).
文摘We report the synthesis and characterization of a Si-based ternary semiconductor Mg_(3)Si_(2)Te_(6),which exhibits a quasitwo-dimensional structure,where the trigonal Mg_(3)Si_(2)Te_(6)layers are separated by Mg ions.Ultraviolet-visible absorption spectroscopy and density functional theory calculations were performed to investigate the electronic structure.The experimentally determined direct band gap is 1.39 eV,consistent with the value of the density function theory calculations.Our results reveal that Mg_(3)Si_(2)Te_(6)is a direct gap semiconductor,which is a potential candidate for near-infrared optoelectronic devices.
文摘Large grain, low-dislocation, high-quality single crystals of various Pb-salt compounds have been grown reproducibly by the Horizontal Unseeded Vapor Growth (HUVG) technique. The Tunable Diode Lasers with better performance have been made with such crystals. The annealing feature, dislocations and diffusion in the crystals have also been investigated.
文摘This paper investigates the steady-state behavior of a semiconductor laser subject to arbitrary levels of external optical feedback by means of an iterative travelling-wave (ITW) model. Analytical expressions are developed based on an iterative equation. We show that, as in good agreement with previous work, in the weak-feedback regime of operation except for a phase shift the ITW model will be simplified to the Lang-Kobayashi (LK) model, and that in the case where this phase shift is equal to zero the ITW model is identical to the LK model. The present work is of use in particular for distinguishing the coherence-collapse regime from the strong-feedback regime where low-intensity-noise and narrow-linewidth laser operation would be possible at high feedback levels with re-stabilization of the compound laser system.
