In Ga N light-emitting diodes（LEDs） with Ga N/In Ga N/Al Ga N/In Ga N/Ga N composition-graded barriers are proposed to replace the sixth and the middle five Ga N barriers under the condition of removing the electron...In Ga N light-emitting diodes（LEDs） with Ga N/In Ga N/Al Ga N/In Ga N/Ga N composition-graded barriers are proposed to replace the sixth and the middle five Ga N barriers under the condition of removing the electron blocking layer（EBL）and studied numerically in this paper. Simulation results show that the specially designed barrier in the sixth barrier is able to modulate the distributions of the holes and electrons in quantum well which is adjacent to the specially designed barrier. Concretely speaking, the new barrier could enhance both the electron and hole concentration remarkably in the previous well and reduce the hole concentration for the latter one to some extent along the growth direction. What is more,a phenomenon, i.e., a better carrier distribution in all the wells, just appears with the adoption of the new barriers in the middle five barriers, resulting in a much higher light output power and a lower efficiency droop than those in a conventional LED structure.展开更多
In this work,a short-wave infrared(SWIR)n-MoSe_(2)/p-GeSn/n-germanium-on-insulator(GOI)heterojunction phototransistor(HPT)with Sn composition-graded GeSn base is proposed for improvement of overall performance at low ...In this work,a short-wave infrared(SWIR)n-MoSe_(2)/p-GeSn/n-germanium-on-insulator(GOI)heterojunction phototransistor(HPT)with Sn composition-graded GeSn base is proposed for improvement of overall performance at low cost.The Sn composition-graded GeSn base layers are grown using magnetron sputtering epitaxy technique for improvement of crystal quality with a high Sn content of 15.2%in the top layer,rendering the extension of the cutoff wavelength beyond 2400 nm and significant suppression of dark current.The enormous electron/hole injection ratio,resulting from the large bandgap offset between the MoSe_(2)emitter and the GeSn base,enables the harvesting of a high photocurrent gain of HPT.By optimizing the device parameters,a considerable responsivity of 23.79 A/W and an excellent specific detectivity of 8.24×10^(10)Jones at the peak wavelength of 2030 nm were achieved for the HPT with the dark current density of 261 mA/cm^(2)under the emitter-collector bias voltage of 1.0 V at room temperature.The fast response speed is obtained for the HPT in terms of rising/falling times of 2.8μs/9.3μs at 1550 nm,surpassing those of most van der Waals(vdW)junction-based devices.Those results demonstrate that GeSn HPTs are suitable for SWIR optoelectronic imaging and microwave photonics applications.展开更多
The characteristics ofnitride-based blue light-emitting diodes （LEDs） with A1GaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells （QWs）, the energy band di- agr...The characteristics ofnitride-based blue light-emitting diodes （LEDs） with A1GaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells （QWs）, the energy band di- agrams, the electrostatic fields, and the light output power are investigated by APSYS software. The simulation results show that the LED with AlGaN composition-graded barriers has a better performance than its AlGaN/InGaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the output power is enhanced significantly and the efficiency droop is markedly improved when the AIGaN barriers are replaced by AlGaN composition-graded barriers.展开更多
In this work,we synthesized a brand-new Al foam with a periodic structure via a simple powder metallurgical route.The periodic architecture consists of both hierarchical porous and bi-directional composition-graded st...In this work,we synthesized a brand-new Al foam with a periodic structure via a simple powder metallurgical route.The periodic architecture consists of both hierarchical porous and bi-directional composition-graded structures.The results show that the hierarchical porous material includes large pores on millimeter scale inheriting from the hollow structure of the Al tubes,and small pores on mi-crometer scale produced by the sintering of Al/Mg powders.The bi-directional Mg concentration-graded structure is formed in the tube walls due to the condensation of Mg vapor in the inner tube wall.The addition of Mg powders achieves excellent metallurgical bonding between the Al powders and the hollow tubes at 550℃.The plateau stress and energy absorption capacity of the Al foam in y-axis compression are significantly higher than that in the x-axis due to their anisotropic structure.In general,the Al foam with Mg addition presents the most superior compression performance,and we believe that our find-ings could open up a unique strategy for developing high-performance metallic foams with the periodic architecture involving both hierarchical porous and bi-directional graded structure.展开更多
基金Project supported by the Science and Technology Program Project for the Innovation of Forefront and Key Technology of Guangdong Province,China(Grant No.2014B010121001)the Special Funds for Strategic Emerging Industries of Guangdong Province,China(Grant No.2012A080304006)+3 种基金the Special Funds for the Innovation of Forefront and Key Technology of Guangdong Province,China(Grant No.2014B010119004)the Science and Technology Program Project for High Conversion Efficiency and Application of Direct Driver High-end LED Chip of Guangdong Province,China(Grant No.2013B010204065)the Special Project for Key Science and Technology of Zhongshan City,Guangdong Province,China(Grant No.2014A2FC204)the Science and Technology Program Project in Huadu District of Guangzhou City,China(Grant No.HD15PT003)
文摘In Ga N light-emitting diodes（LEDs） with Ga N/In Ga N/Al Ga N/In Ga N/Ga N composition-graded barriers are proposed to replace the sixth and the middle five Ga N barriers under the condition of removing the electron blocking layer（EBL）and studied numerically in this paper. Simulation results show that the specially designed barrier in the sixth barrier is able to modulate the distributions of the holes and electrons in quantum well which is adjacent to the specially designed barrier. Concretely speaking, the new barrier could enhance both the electron and hole concentration remarkably in the previous well and reduce the hole concentration for the latter one to some extent along the growth direction. What is more,a phenomenon, i.e., a better carrier distribution in all the wells, just appears with the adoption of the new barriers in the middle five barriers, resulting in a much higher light output power and a lower efficiency droop than those in a conventional LED structure.
基金supported in part by the National Natural Science Foundation of China(Nos.62074134 and 62104205)in part by the National Key Research and Development Program of China(No.2018YFB2200103).
文摘In this work,a short-wave infrared(SWIR)n-MoSe_(2)/p-GeSn/n-germanium-on-insulator(GOI)heterojunction phototransistor(HPT)with Sn composition-graded GeSn base is proposed for improvement of overall performance at low cost.The Sn composition-graded GeSn base layers are grown using magnetron sputtering epitaxy technique for improvement of crystal quality with a high Sn content of 15.2%in the top layer,rendering the extension of the cutoff wavelength beyond 2400 nm and significant suppression of dark current.The enormous electron/hole injection ratio,resulting from the large bandgap offset between the MoSe_(2)emitter and the GeSn base,enables the harvesting of a high photocurrent gain of HPT.By optimizing the device parameters,a considerable responsivity of 23.79 A/W and an excellent specific detectivity of 8.24×10^(10)Jones at the peak wavelength of 2030 nm were achieved for the HPT with the dark current density of 261 mA/cm^(2)under the emitter-collector bias voltage of 1.0 V at room temperature.The fast response speed is obtained for the HPT in terms of rising/falling times of 2.8μs/9.3μs at 1550 nm,surpassing those of most van der Waals(vdW)junction-based devices.Those results demonstrate that GeSn HPTs are suitable for SWIR optoelectronic imaging and microwave photonics applications.
基金Project supported by the National High Technology Program of China(Nos.2011AA03A105,2013AA03A101)the National Natural Science Foundation of China(Nos.61306051,61306050,11474105)+5 种基金the Beijing Municipal Science and Technology Project(No.D12110300140000)the National Basic Research Program of China(No.2011CB301902)the Industry-Academia-Research Union Special Fund of Guangdong Province of China(No.2012B091000169)the Science&Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund of China(No.2012B090600038)the Specialized Research Fund for the Doctoral Program of Higher Education(No.20134407110008)the Science research innovation foundation of South China Normal University of China(No.2013kyjj041)
文摘The characteristics ofnitride-based blue light-emitting diodes （LEDs） with A1GaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells （QWs）, the energy band di- agrams, the electrostatic fields, and the light output power are investigated by APSYS software. The simulation results show that the LED with AlGaN composition-graded barriers has a better performance than its AlGaN/InGaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the output power is enhanced significantly and the efficiency droop is markedly improved when the AIGaN barriers are replaced by AlGaN composition-graded barriers.
基金financially supported by the National Key R&D Program of China(No.2021YFB3802300)the Guang-dong Major Project of Basic and Applied Basic Research(No.2021B0301030001)+1 种基金supported by the National Natural Science Foundation of China(Nos.51804239,51972252,and 52171045)the Fundamen-tal Research Project at Zhongshan City in Guangdong province(No.2020B2013).
文摘In this work,we synthesized a brand-new Al foam with a periodic structure via a simple powder metallurgical route.The periodic architecture consists of both hierarchical porous and bi-directional composition-graded structures.The results show that the hierarchical porous material includes large pores on millimeter scale inheriting from the hollow structure of the Al tubes,and small pores on mi-crometer scale produced by the sintering of Al/Mg powders.The bi-directional Mg concentration-graded structure is formed in the tube walls due to the condensation of Mg vapor in the inner tube wall.The addition of Mg powders achieves excellent metallurgical bonding between the Al powders and the hollow tubes at 550℃.The plateau stress and energy absorption capacity of the Al foam in y-axis compression are significantly higher than that in the x-axis due to their anisotropic structure.In general,the Al foam with Mg addition presents the most superior compression performance,and we believe that our find-ings could open up a unique strategy for developing high-performance metallic foams with the periodic architecture involving both hierarchical porous and bi-directional graded structure.
