三维电子气(Three Dimensional Electron Gas,3DEG)是极化掺杂场效应晶体管(Polarization-doped Field Effect Transistor,PolFET)优秀性能的关键所在,但目前未见三维电子气相关的定量理论工作。提出三维电子气的定量理论,基于PolFET中...三维电子气(Three Dimensional Electron Gas,3DEG)是极化掺杂场效应晶体管(Polarization-doped Field Effect Transistor,PolFET)优秀性能的关键所在,但目前未见三维电子气相关的定量理论工作。提出三维电子气的定量理论,基于PolFET中的渐变Al组分铝镓氮(Aluminum Gallium Nitride,AlGaN)层的极化效应定量研究,计算体极化电荷分布,结合空间电荷分析提出AlGaN层的耗尽近似和中性近似,引入费米-狄拉克统计、能带电势关系等物理关系,建立求解耗尽区宽度的方程组,定义其边界条件与边界近似,并给出求解耗尽区宽度的数值解法和方程解析解(最大相对误差均不超过3%)。展开更多
Magnetic Monopole SearchesIsolated supermassive monopole candidate events have not been confirmed. The most sensitive experiments obtain negative results.
We propose a wavelength selective diffraction using reflectors placed on three-dimensional grid cross points. Different wavelengths are separated into spots distributed in two-dimensional plane. Compact device with hi...We propose a wavelength selective diffraction using reflectors placed on three-dimensional grid cross points. Different wavelengths are separated into spots distributed in two-dimensional plane. Compact device with high port counts is attainable.展开更多
文摘三维电子气(Three Dimensional Electron Gas,3DEG)是极化掺杂场效应晶体管(Polarization-doped Field Effect Transistor,PolFET)优秀性能的关键所在,但目前未见三维电子气相关的定量理论工作。提出三维电子气的定量理论,基于PolFET中的渐变Al组分铝镓氮(Aluminum Gallium Nitride,AlGaN)层的极化效应定量研究,计算体极化电荷分布,结合空间电荷分析提出AlGaN层的耗尽近似和中性近似,引入费米-狄拉克统计、能带电势关系等物理关系,建立求解耗尽区宽度的方程组,定义其边界条件与边界近似,并给出求解耗尽区宽度的数值解法和方程解析解(最大相对误差均不超过3%)。
文摘Magnetic Monopole SearchesIsolated supermassive monopole candidate events have not been confirmed. The most sensitive experiments obtain negative results.
文摘We propose a wavelength selective diffraction using reflectors placed on three-dimensional grid cross points. Different wavelengths are separated into spots distributed in two-dimensional plane. Compact device with high port counts is attainable.
