The rapid advancement of the thin-film lithium niobate(LiNbO_(3))platform has established it as a premier choice for high-performance photonics integrated circuits.However,the scalability and cost-efficiency of this p...The rapid advancement of the thin-film lithium niobate(LiNbO_(3))platform has established it as a premier choice for high-performance photonics integrated circuits.However,the scalability and cost-efficiency of this platform are hindered by the reliance on chip-level fabrication and integration for passive and active components,necessitating a robust wafer-level LiNbO_(3)heterogeneous integration platform.Despite its critical role in enabling ultrahigh-speed optical interconnects,as well as optical mmWave/THz sensing and communication,the realization of ultrahigh-speed photodiodes and optical coherent receivers on the LiNbO_(3)platform remains an unresolved challenge.This is primarily due to the challenges associated with the large-scale integration of direct-bandgap materials.To address these challenges,we have developed a scalable,high-speed InP-LiNbO_(3)wafer-level heterogeneous integration platform.This platform facilitates the fabrication of ultrahigh-speed photodiodes with a bandwidth of 140 GHz,capable of receiving high-quality 100-Gbaud pulse amplitude modulation(PAM4)signals.Moreover,we demonstrate a sevenchannel,single-polarization I–Q coherent receiver chip with an aggregate receiving capacity of 3.584 Tbit s^(-1).This coherent receiver exhibits a balanced detection bandwidth of 60 GHz and a common mode rejection ratio(CMRR)exceeding 20 dB.It achieves receiving capacities of 600 Gbit s^(-1)λ^(-1)with a 100-Gbaud 64-QAM signal and 512 Gbit s^(-1)λ^(-1)with a 128-Gbaud 16-QAM signal.Furthermore,energy consumption as low as 9.6 fJ bit^(-1) and 13.5 fJ bit^(-1) is achieved for 200 Gbit s^(-1)and 400 Gbit s^(-1)capacities,respectively.Our work provides a viable pathway toward enabling Pbps hyperscale data center interconnects,as well as optical mmWave/THz sensing and communication.展开更多
基金supported by the National Key Research and Development Program(Grant No.2022YFB2803800)the National Natural Science Foundation of China(Grant No.U23A20376,62431024).
文摘The rapid advancement of the thin-film lithium niobate(LiNbO_(3))platform has established it as a premier choice for high-performance photonics integrated circuits.However,the scalability and cost-efficiency of this platform are hindered by the reliance on chip-level fabrication and integration for passive and active components,necessitating a robust wafer-level LiNbO_(3)heterogeneous integration platform.Despite its critical role in enabling ultrahigh-speed optical interconnects,as well as optical mmWave/THz sensing and communication,the realization of ultrahigh-speed photodiodes and optical coherent receivers on the LiNbO_(3)platform remains an unresolved challenge.This is primarily due to the challenges associated with the large-scale integration of direct-bandgap materials.To address these challenges,we have developed a scalable,high-speed InP-LiNbO_(3)wafer-level heterogeneous integration platform.This platform facilitates the fabrication of ultrahigh-speed photodiodes with a bandwidth of 140 GHz,capable of receiving high-quality 100-Gbaud pulse amplitude modulation(PAM4)signals.Moreover,we demonstrate a sevenchannel,single-polarization I–Q coherent receiver chip with an aggregate receiving capacity of 3.584 Tbit s^(-1).This coherent receiver exhibits a balanced detection bandwidth of 60 GHz and a common mode rejection ratio(CMRR)exceeding 20 dB.It achieves receiving capacities of 600 Gbit s^(-1)λ^(-1)with a 100-Gbaud 64-QAM signal and 512 Gbit s^(-1)λ^(-1)with a 128-Gbaud 16-QAM signal.Furthermore,energy consumption as low as 9.6 fJ bit^(-1) and 13.5 fJ bit^(-1) is achieved for 200 Gbit s^(-1)and 400 Gbit s^(-1)capacities,respectively.Our work provides a viable pathway toward enabling Pbps hyperscale data center interconnects,as well as optical mmWave/THz sensing and communication.
