A low noise, high conversion gain down-conversion mixer for WLAN 802.11a applications, which adopts the high intermediate frequency （IF） topology, is presented. The input radio frequency （RF）band, local oscillator...A low noise, high conversion gain down-conversion mixer for WLAN 802.11a applications, which adopts the high intermediate frequency （IF） topology, is presented. The input radio frequency （RF）band, local oscillator（LO）frequency band and output IF are 5.15 to 5.35, 4.15 to 4.35 and 1 GHz, respectively. Source resistive degeneration technique and pseudo-differential Gilbert topology are used to achieve high linearity, and, current bleeding technique and LC resonant loads are used to acquire a low noise figure. In addition, the mixer adopts a common-source transistor pair cross-stacked with a source follow pair（CSSF）circuit as an output buffer to enhance the mixer＇s conversion gain but not deteriorate the other performances. The mixer is implemented in 0.18 μm RF CMOS（complementary metal oxide semiconductor transistor）technology and the chip area of the mixer including all bonding pads is 580 μm×1 185 μm. The measured results show that under a 1.8 V supply, the conversion gain is 10.1 dB; the input 1 dB compression point and the input-referred third-order intercept point are-3.5 and 5.3 dBm, respectively; the single side band （SSB）noise figure （NF）is 8.65 dB, and the core current consumption is 3.8 mA.展开更多
基于高速低功耗混合应用场景下对互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)比较器性能的综合需求,系统研究其结构优化设计。阐述动态比较器在响应速度、功耗控制、输入失调与噪声抑制等方面的关键技术,介绍...基于高速低功耗混合应用场景下对互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)比较器性能的综合需求,系统研究其结构优化设计。阐述动态比较器在响应速度、功耗控制、输入失调与噪声抑制等方面的关键技术,介绍前置放大器、电源控制、闭环反馈及偏置电路的协同优化策略。结合65 nm CMOS工艺下的仿真测试结果,分析主要性能指标在典型工况下的表现,验证所提结构的可实现性与工程适应性。结果表明,该设计能够在低功耗约束下保持高速响应。展开更多
Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology....Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.展开更多
We propose a novel hybrid phase-locked loop （PLL） architecture for overcoming the trade-off between fast locking time and low spur. To reduce the settling time and meanwhile suppress the reference spurs, we employ a...We propose a novel hybrid phase-locked loop （PLL） architecture for overcoming the trade-off between fast locking time and low spur. To reduce the settling time and meanwhile suppress the reference spurs, we employ a wide-band single-path PLL and a narrow-band dual-path PLL in a transient state and a steady state, respectively, by changing the loop bandwidth according to the gain of voltage controlled oscillator （VCO） and the resister of the loop filter. The hybrid PLL is implemented in a 0.18-μm complementary metal oxide semiconductor （CMOS） process with a total die area of 1.4×0.46 mm2. The measured results exhibit a reference spur level of lower than -73 dB with a reference frequency of 10 MHz and a settling time of 20 μs with 40 MHz frequency jump at 2 GHz. The total power consumption of the hybrid PLL is less than 27 mW with a supply voltage of 1.8 V.展开更多
A 37. 5 MHz differential complementary metal oxide semiconductor （CMOS） crystal oscillator with low power and low phase noise for the radio frequency tuner of digital radio broadcasting digital radio mondiale （DRAM...A 37. 5 MHz differential complementary metal oxide semiconductor （CMOS） crystal oscillator with low power and low phase noise for the radio frequency tuner of digital radio broadcasting digital radio mondiale （DRAM） and digital audio broadcasting （DAB） systems is realized and characterized. The conventional cross-coupled n-type metal oxide semiconductor （NMOS） transistors are replaced by p-type metal oxide semiconductor （PMOS） transistors to decrease the phase noise in the core part of the crystal oscillator. A symmetry structure of the current mirror is adopted to increase the stability of direct current. The amplitude detecting circuit made up of a single- stage CMOS operational transconductance amplifier （OTA） and a simple amplitude detector is used to improve the current accuracy of the output signals. The chip is fabricated in a 0. 18- pxn CMOS process, and the total chip size is 0. 35 mm x 0. 3 mm. Under a supply voltage of 1.8 V, the measured power consumption is 3.6 mW including the output buffer for 50 testing loads. The proposed crystal oscillator exhibits a low phase noise of - 134. 7 dBc/Hz at 1-kHz offset from the center frequency of 37. 5 MHz.展开更多
针对智能车因单条引导线信息量少而引起的误识别问题,设计一种能自动识别和跟踪双边引导线的智能车系统。智能车以Freescale公司MC9S12XSl28作为核心控制器,利用COMS(Complementary Metal OxideSemiconductor)摄像头OV7620作为路径信息...针对智能车因单条引导线信息量少而引起的误识别问题,设计一种能自动识别和跟踪双边引导线的智能车系统。智能车以Freescale公司MC9S12XSl28作为核心控制器,利用COMS(Complementary Metal OxideSemiconductor)摄像头OV7620作为路径信息采集装置,对采集图像进行二值化处理、去噪操作和边缘检测后提取路径信息、进而准确地判别跑道的形状,为舵机和电机提供控制依据,以使小车平稳快速地行驶。同时,提出将行驶状态与赛道信息综合考虑的措施,并通过PID(Proportional Integral Differential)控制策略以及实验测试,实现了对各种典型跑道的优化处理,使高速行进中的智能车具有良好的转向调节能力和加减速响应能力。智能车可以在以白色为底面颜色,两边有黑色引导线的跑道上运行,克服了因单条引导线信息量少而引起的误识别问题。展开更多
磁场是太阳物理的第1观测量,当前太阳磁场观测研究正迈向大视场、高时空分辨率、高偏振测量精度以及空间观测的时代.中国首颗太阳观测卫星-先进天基太阳天文台(ASO-S)也配置了具有高时空分辨率、高磁场灵敏度的全日面矢量磁像仪(FMG)载...磁场是太阳物理的第1观测量,当前太阳磁场观测研究正迈向大视场、高时空分辨率、高偏振测量精度以及空间观测的时代.中国首颗太阳观测卫星-先进天基太阳天文台(ASO-S)也配置了具有高时空分辨率、高磁场灵敏度的全日面矢量磁像仪(FMG)载荷,针对FMG载荷的需求,讨论了大面阵、高帧频互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)图像传感器应用于太阳磁场观测的可行性.首先,基于滤光器型太阳磁像仪观测的原理,比较分析了目前CMOS图像传感器(可用的或是可选的两种快门模式)的特点,指出全局快门类型更适合FMG;其次搭建了CMOS传感器实验室测试系统,测量了CMOS图像传感器的像素增益及其分布规律;最后在怀柔太阳观测基地的全日面太阳望远镜上开展了实测验证,获得预期成果.在这些研究基础上,形成了FMG载荷探测器选型方向.展开更多
基金The Science and Technology Program of Zhejiang Province (No.2008C16017)
文摘A low noise, high conversion gain down-conversion mixer for WLAN 802.11a applications, which adopts the high intermediate frequency （IF） topology, is presented. The input radio frequency （RF）band, local oscillator（LO）frequency band and output IF are 5.15 to 5.35, 4.15 to 4.35 and 1 GHz, respectively. Source resistive degeneration technique and pseudo-differential Gilbert topology are used to achieve high linearity, and, current bleeding technique and LC resonant loads are used to acquire a low noise figure. In addition, the mixer adopts a common-source transistor pair cross-stacked with a source follow pair（CSSF）circuit as an output buffer to enhance the mixer＇s conversion gain but not deteriorate the other performances. The mixer is implemented in 0.18 μm RF CMOS（complementary metal oxide semiconductor transistor）technology and the chip area of the mixer including all bonding pads is 580 μm×1 185 μm. The measured results show that under a 1.8 V supply, the conversion gain is 10.1 dB; the input 1 dB compression point and the input-referred third-order intercept point are-3.5 and 5.3 dBm, respectively; the single side band （SSB）noise figure （NF）is 8.65 dB, and the core current consumption is 3.8 mA.
基金Project supported the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.XBBS201316,2016-QNXZ-B-2,and 2016-QNXZ-B-8)Young Talent Training Project of Science and Technology,Xinjiang,China(Grant No.qn2015yx035)
文摘Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.
基金supported by the National Natural Science Foundation of China(Grant No.61307128)the National Basic Research Program of China(GrantNo.2010CB327505)+1 种基金the Specialized Research Found for the Doctoral Program of Higher Education of China(Grant No.20131101120027)the Basic Research Foundation of Beijing Institute of Technology of China(Grant No.20120542015)
文摘We propose a novel hybrid phase-locked loop （PLL） architecture for overcoming the trade-off between fast locking time and low spur. To reduce the settling time and meanwhile suppress the reference spurs, we employ a wide-band single-path PLL and a narrow-band dual-path PLL in a transient state and a steady state, respectively, by changing the loop bandwidth according to the gain of voltage controlled oscillator （VCO） and the resister of the loop filter. The hybrid PLL is implemented in a 0.18-μm complementary metal oxide semiconductor （CMOS） process with a total die area of 1.4×0.46 mm2. The measured results exhibit a reference spur level of lower than -73 dB with a reference frequency of 10 MHz and a settling time of 20 μs with 40 MHz frequency jump at 2 GHz. The total power consumption of the hybrid PLL is less than 27 mW with a supply voltage of 1.8 V.
基金The National Natural Science Foundation of China(No. 61106024)the Specialized Research Fund for the Doctoral Program of Higher Education (No. 20090092120012)the Science and Technology Program of South east University (No. KJ2010402)
文摘A 37. 5 MHz differential complementary metal oxide semiconductor （CMOS） crystal oscillator with low power and low phase noise for the radio frequency tuner of digital radio broadcasting digital radio mondiale （DRAM） and digital audio broadcasting （DAB） systems is realized and characterized. The conventional cross-coupled n-type metal oxide semiconductor （NMOS） transistors are replaced by p-type metal oxide semiconductor （PMOS） transistors to decrease the phase noise in the core part of the crystal oscillator. A symmetry structure of the current mirror is adopted to increase the stability of direct current. The amplitude detecting circuit made up of a single- stage CMOS operational transconductance amplifier （OTA） and a simple amplitude detector is used to improve the current accuracy of the output signals. The chip is fabricated in a 0. 18- pxn CMOS process, and the total chip size is 0. 35 mm x 0. 3 mm. Under a supply voltage of 1.8 V, the measured power consumption is 3.6 mW including the output buffer for 50 testing loads. The proposed crystal oscillator exhibits a low phase noise of - 134. 7 dBc/Hz at 1-kHz offset from the center frequency of 37. 5 MHz.
文摘针对智能车因单条引导线信息量少而引起的误识别问题,设计一种能自动识别和跟踪双边引导线的智能车系统。智能车以Freescale公司MC9S12XSl28作为核心控制器,利用COMS(Complementary Metal OxideSemiconductor)摄像头OV7620作为路径信息采集装置,对采集图像进行二值化处理、去噪操作和边缘检测后提取路径信息、进而准确地判别跑道的形状,为舵机和电机提供控制依据,以使小车平稳快速地行驶。同时,提出将行驶状态与赛道信息综合考虑的措施,并通过PID(Proportional Integral Differential)控制策略以及实验测试,实现了对各种典型跑道的优化处理,使高速行进中的智能车具有良好的转向调节能力和加减速响应能力。智能车可以在以白色为底面颜色,两边有黑色引导线的跑道上运行,克服了因单条引导线信息量少而引起的误识别问题。
文摘磁场是太阳物理的第1观测量,当前太阳磁场观测研究正迈向大视场、高时空分辨率、高偏振测量精度以及空间观测的时代.中国首颗太阳观测卫星-先进天基太阳天文台(ASO-S)也配置了具有高时空分辨率、高磁场灵敏度的全日面矢量磁像仪(FMG)载荷,针对FMG载荷的需求,讨论了大面阵、高帧频互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)图像传感器应用于太阳磁场观测的可行性.首先,基于滤光器型太阳磁像仪观测的原理,比较分析了目前CMOS图像传感器(可用的或是可选的两种快门模式)的特点,指出全局快门类型更适合FMG;其次搭建了CMOS传感器实验室测试系统,测量了CMOS图像传感器的像素增益及其分布规律;最后在怀柔太阳观测基地的全日面太阳望远镜上开展了实测验证,获得预期成果.在这些研究基础上,形成了FMG载荷探测器选型方向.
