This article introduces a novel 20 V radiation-hardened high-voltage metal-oxide-semiconductor field-effect transistor(MOSFET)driver with an optimized input circuit and a drain-surrounding-source(DSS)structure.The inp...This article introduces a novel 20 V radiation-hardened high-voltage metal-oxide-semiconductor field-effect transistor(MOSFET)driver with an optimized input circuit and a drain-surrounding-source(DSS)structure.The input circuit of a conventional inverter consists of a thick-gate-oxide n-type MOSFET(NMOS).These conventional drivers can tolerate a total ionizing dose(TID)of up to 100 krad(Si).In contrast,the proposed comparator input circuit uses both a thick-gate-oxide p-type MOSFET(PMOS)and thin-gate-oxide NMOS to offer a high input voltage and higher TID tolerance.Because the thick-gate-oxide PMOS and thin-gate-oxide NMOS collectively provide better TID tolerance than the thick-gate-oxide NMOS,the circuit exhibits enhanced TID tolerance of>300 krad(Si).Simulations and experimental date indicate that the DSS structure reduces the probability of unwanted parasitic bipolar junction transistor activation,yielding a better single-event effect tolerance of over 81.8 MeVcm^(2)mg^(-1).The innovative strategy proposed in this study involves circuit and layout design optimization,and does not require any specialized process flow.Hence,the proposed circuit can be manufactured using common commercial 0.35μm BCD processes.展开更多
This paper presents a fully-differential CMOS dynamic comparator for use in high-speed pipelined ADCs with low stage resolution. Because the architecture is based on the coupled current sources and differential input ...This paper presents a fully-differential CMOS dynamic comparator for use in high-speed pipelined ADCs with low stage resolution. Because the architecture is based on the coupled current sources and differential input pairs, this comparator＇s threshold voltage can be adjusted to a desired level. Compared with traditional comparators, this one shows significant improvement in area,power,and speed. Fabricated in 0.35μm CMOS technology,it occupies only 30μm × 70μm. Simulation and measurement results indicate the comparator has a sampling frequency up to 1GHz with 2Vpp differential input signal range and only 181μW power consumption under a 3.3V supply. The speed/power ratio reaches up to 5524GS/J.展开更多
随着人工智能技术的发展,集成了检索增强生成的AI附加组件在学术搜索领域日益普及。文章对PrimoResearch Assistant、Web of Science Research Assistant和Scopus AI三款工具开展了详细的对比研究,从检索与生成机制、预过滤和查询解析...随着人工智能技术的发展,集成了检索增强生成的AI附加组件在学术搜索领域日益普及。文章对PrimoResearch Assistant、Web of Science Research Assistant和Scopus AI三款工具开展了详细的对比研究,从检索与生成机制、预过滤和查询解析、结果输出及用户体验、定价条款、可解释性和可重复性等多个维度进行分析,并通过布尔检索策略生成方式、检索增强生成答案等测试评估其性能表现,旨在为学术研究人员和图书馆员提供参考依据,帮助其选择最适合的工具以提高学术搜索效率。展开更多
文章基于CNKI、Web of Science两大数据库2005—2024年收录的图书馆学习空间研究文献,运用CiteSpace、Bicomb、SPSS软件进行可视化分析。结果显示,国外研究以技术驱动创新为主导,聚焦智能化技术与跨学科应用;而国内研究呈现理论创新与...文章基于CNKI、Web of Science两大数据库2005—2024年收录的图书馆学习空间研究文献,运用CiteSpace、Bicomb、SPSS软件进行可视化分析。结果显示,国外研究以技术驱动创新为主导,聚焦智能化技术与跨学科应用;而国内研究呈现理论创新与实践探索并重,通过大数据、AI等技术形成本土化解决方案。文章提出通过数字技术与人文关怀的平衡发展、国际化视野与本土化创新的有机结合、理论研究与实践应用的深度融合,为我国图书馆学习空间的研究提供借鉴与参考。展开更多
基金supported by the National Natural Science Foundation of China(U2241221).
文摘This article introduces a novel 20 V radiation-hardened high-voltage metal-oxide-semiconductor field-effect transistor(MOSFET)driver with an optimized input circuit and a drain-surrounding-source(DSS)structure.The input circuit of a conventional inverter consists of a thick-gate-oxide n-type MOSFET(NMOS).These conventional drivers can tolerate a total ionizing dose(TID)of up to 100 krad(Si).In contrast,the proposed comparator input circuit uses both a thick-gate-oxide p-type MOSFET(PMOS)and thin-gate-oxide NMOS to offer a high input voltage and higher TID tolerance.Because the thick-gate-oxide PMOS and thin-gate-oxide NMOS collectively provide better TID tolerance than the thick-gate-oxide NMOS,the circuit exhibits enhanced TID tolerance of>300 krad(Si).Simulations and experimental date indicate that the DSS structure reduces the probability of unwanted parasitic bipolar junction transistor activation,yielding a better single-event effect tolerance of over 81.8 MeVcm^(2)mg^(-1).The innovative strategy proposed in this study involves circuit and layout design optimization,and does not require any specialized process flow.Hence,the proposed circuit can be manufactured using common commercial 0.35μm BCD processes.
文摘This paper presents a fully-differential CMOS dynamic comparator for use in high-speed pipelined ADCs with low stage resolution. Because the architecture is based on the coupled current sources and differential input pairs, this comparator＇s threshold voltage can be adjusted to a desired level. Compared with traditional comparators, this one shows significant improvement in area,power,and speed. Fabricated in 0.35μm CMOS technology,it occupies only 30μm × 70μm. Simulation and measurement results indicate the comparator has a sampling frequency up to 1GHz with 2Vpp differential input signal range and only 181μW power consumption under a 3.3V supply. The speed/power ratio reaches up to 5524GS/J.
文摘随着人工智能技术的发展,集成了检索增强生成的AI附加组件在学术搜索领域日益普及。文章对PrimoResearch Assistant、Web of Science Research Assistant和Scopus AI三款工具开展了详细的对比研究,从检索与生成机制、预过滤和查询解析、结果输出及用户体验、定价条款、可解释性和可重复性等多个维度进行分析,并通过布尔检索策略生成方式、检索增强生成答案等测试评估其性能表现,旨在为学术研究人员和图书馆员提供参考依据,帮助其选择最适合的工具以提高学术搜索效率。
文摘文章基于CNKI、Web of Science两大数据库2005—2024年收录的图书馆学习空间研究文献,运用CiteSpace、Bicomb、SPSS软件进行可视化分析。结果显示,国外研究以技术驱动创新为主导,聚焦智能化技术与跨学科应用;而国内研究呈现理论创新与实践探索并重,通过大数据、AI等技术形成本土化解决方案。文章提出通过数字技术与人文关怀的平衡发展、国际化视野与本土化创新的有机结合、理论研究与实践应用的深度融合,为我国图书馆学习空间的研究提供借鉴与参考。
