With the rapid integration of renewable energy sources,modern power systems are increasingly challenged by heightened volatility and uncertainty.Doubly-fed variable-speed pumped storage units(DFVS-PSUs)have emerged as...With the rapid integration of renewable energy sources,modern power systems are increasingly challenged by heightened volatility and uncertainty.Doubly-fed variable-speed pumped storage units(DFVS-PSUs)have emerged as promising technologies for mitigating grid oscillations and enhancing system flexibility.However,the excitation converters in DFVS-PSUs are prone to significant issues such as elevated common-mode voltage(CMV)and neutral-point voltage(NPV)fluctuations,which can lead to electromagnetic interference and degrade transient performance.To address these challenges,an optimized virtual space vector pulse width modulation(OVSVPWM)strategy is proposed,aiming to suppress CMV and NPV simultaneously through coordinated multi-objective control.Specifically,a dynamic feedback mechanism is introduced to adjust the balancing factor of basic vectors in the synthesized virtual small vector in real-time,achieving autonomous balancing of the NPV.To address the excessive switching actions introduced by the OVSVPWM strategy,a phase duty ratio-based sequence reconstruction method is adopted,which reduces the total number of switching actions to half of the original.A zero-level buffering scheme is employed to reconstruct the single-phase voltage-level output sequence,achieving peak CMV suppression down to udc/6.Simulation results demonstrate that the proposed strategy significantly improves electromagnetic compatibility and operational stability while maintaining high power quality.展开更多
Rectifiers with high efficiency and high power density are crucial to the stable and efficient power supply of 5G communication base stations,which deserves in-depth investigation.In general,there are two key problems...Rectifiers with high efficiency and high power density are crucial to the stable and efficient power supply of 5G communication base stations,which deserves in-depth investigation.In general,there are two key problems to be addressed:supporting both alternating current(AC)and direct current(DC)input,and minimizing the common-mode voltage as well as leakage current for safety reasons.In this paper,a hybrid five-level single-phase rectifier is proposed.A five-level topology is adopted in the upper arm,and a half-bridge diode topology is adopted in the lower arm.A dual closed-loop control strategy and a flying capacitor voltage regulation method are designed accordingly so that the compatibility of both AC and DC input is realized with low common voltage and small passive devices.Simulation and experimental results demonstrate the effectiveness and performance of the proposed rectifier.展开更多
Insulation failure significantly contributes to the unpredictable shutdown of power equipment.Compared to the partial discharge and high-frequency(HF)injection methods,the HF common-mode(CM)leakage current method offe...Insulation failure significantly contributes to the unpredictable shutdown of power equipment.Compared to the partial discharge and high-frequency(HF)injection methods,the HF common-mode(CM)leakage current method offers a non-intrusive and highly sensitive alternative.However,the detection of HF CM currents is susceptible to interference from differential-mode(DM)currents,which exhibit high-amplitude and multifrequency components during normal operation.To address this challenge,this paper proposes a double-ring current sensor based on the principle of magnetic shielding for inverter-fed machine winding insulation monitoring.The inner ring harnesses the magnetic aggregation effect to isolate the DM current magnetic field,whereas the outer ring serves as the magnetic core of the Rogowski current sensor,enabling HF CM current monitoring.First,the magnetic field distributions of the CM and DM currents were analyzed.Then,a correlation between the sensor parameters and signal-to-noise ratio of the target HF CM current was established.Finally,an experimental study was conducted on a 3-kW PMSM for verification.The results indicate that the proposed double-ring HF CM sensor can effectively mitigate DM current interference.Compared to a single-ring sensor,a reduction of approximately 40%in the DM component was achieved,which significantly enhanced the precision of online insulation monitoring.展开更多
The balanced operational amplifier including its merits and designing methods is discussed by comparing its performance to a conventional differential output amplifier when used in a single balanced stage. A balanced ...The balanced operational amplifier including its merits and designing methods is discussed by comparing its performance to a conventional differential output amplifier when used in a single balanced stage. A balanced OTA circuit design is also presented.展开更多
A new method for reducing the substrate rated losses of integrated spiral inductors is presented.The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the S...A new method for reducing the substrate rated losses of integrated spiral inductors is presented.The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the Si substrate. The substrate pn junction can be realized by using the standard silicon technologies without any additional processing steps.Integrated inductors on silicon are designed and fabricated. S parameters of the inductor based equivalent circuit are investigated and the inductor parameters are calculated.The impacts of the substrate pn junction isolation on the inductor quality factor are studied.The experimental results show that substrate pn junction isolation in certain depth has achieved a significant improvement.At 3GHz,the substrate pn junction isolation increases the inductor quality factor by 40%.展开更多
A new structure of the on- chip integrated inductors im plem ented in conventional Si process is presented as a lateral solenoid.The fabrication process utilizes a conventional Si technology with standard double- lay...A new structure of the on- chip integrated inductors im plem ented in conventional Si process is presented as a lateral solenoid.The fabrication process utilizes a conventional Si technology with standard double- layer m etal- lization.S param eters of the inductors based equivalent circuit are investigated and the inductor parameters are cal- culated from the m easured data.Experimental results are presented on an integrated inductors fabricated in a lateral solenoid type utilizing double m etal layers rather than a single metal layer as used in conventional planar spiral de- vices.Inductors with peak Q of 1.3and inductance value of 2 .2 n H are presented,which are com parable to conven- tional planar spiral inductors.展开更多
To decrease the metal losses of RF spiral inductor,a novel layout structure with gradually reduced metal line width and space from outside to inside is presented. This gradual changed inductor has less eddy-current ef...To decrease the metal losses of RF spiral inductor,a novel layout structure with gradually reduced metal line width and space from outside to inside is presented. This gradual changed inductor has less eddy-current effect than the conventional inductor of fixed metal width and space. So the series resistance can be reduced and the quality （Q） factor of the inductor relating to metal losses is increased. The obtained experimental results corroborate the validity of the proposed method. For a 6nH inductor on high-resistivity silicon at 2.46GHz,Q factor of 14.25 is 11.3% higher than the conventional inductor with the same layout size. This inductor can be integrated with radio frequency integrated circuits to gain better performance in RF front end of a wireless communication system.展开更多
An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyze...An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyzed. Circuit element parameters are extracted from RF measurements. Compared with the reference air-core inductor without magnetic film, L and Q of the ferrite thin-film inductor are 17% and 40% higher at 2GHz,respectively. Both the equivalent circuit analysis and test results demonstrate significant enhancement of the performance of RF integration inductors by ferrite thin-film integration.展开更多
A voltage controlled oscillator (VCO) which can generate 2 4GHz quadrature local oscillating (LO) signals is reported.It combines a LC VCO,realized by on chip symmetrical spiral inductors and differential diodes,an...A voltage controlled oscillator (VCO) which can generate 2 4GHz quadrature local oscillating (LO) signals is reported.It combines a LC VCO,realized by on chip symmetrical spiral inductors and differential diodes,and a two stage ring VCO.The principle of this VCO is demonstrated and further the phase noise is discussed in detail.The fabrication of prototype is demonstrated using 0 25μm single poly five metal N well salicide CMOS digital process.The reports show that the novel VCO is can generate quadrature LO signals with a tuning range of more than 300MHz as well as the phase noise--104 33dBc/Hz at 600KHz offset at 2 41GHz (when measuring only one port of differential outputs).In addition,this VCO can work in low power supply voltage and dissipate low power,thus it can be used in many integrated transceivers.展开更多
A distributed capacitance model for monolithic inductors is developed to predict the equivalently parasitical capacitances of the inductor.The ratio of the self-resonant frequency (f SR) of the differential-driven sym...A distributed capacitance model for monolithic inductors is developed to predict the equivalently parasitical capacitances of the inductor.The ratio of the self-resonant frequency (f SR) of the differential-driven symmetric inductor to the f SR of the single-ended driven inductor is firstly predicted and explained.Compared with a single-ended configuration,experimental data demonstrate that the differential inductor offers a 127% greater maximum quality factor and a broader range of operating frequencies.Two differential inductors with low parasitical capacitance are developed and validated.展开更多
A novel local-dielectric-thickening technique i s presented for performance improvements of Si-based spiral inductors.This technique employs the processes of deposition,photolithography,and wet-etching,to locally thic...A novel local-dielectric-thickening technique i s presented for performance improvements of Si-based spiral inductors.This technique employs the processes of deposition,photolithography,and wet-etching,to locally thicken the oxide layer under the inductor,which can decrease the substrate loss and improve the inductor performance.Both the structures and processes are compact,economical,and compatible with CMOS processing.Several square spiral inductors with different inductances are fabricated,and the quality factors and the self-resonant frequencies both increase clearly with this proposed technique:for the 10nH,5nH,and 2nH inductors,the peak quality factors are effectively improved by 46.7%,49.7%,and 68.6%,respectively;however,the improvement percents of the self-resonant frequencies are more significant,which are 92.1%,91.0%,and no less than 68.1% respectively.展开更多
Dual pn junctions in lateral and vertical directions are formed by diffusing the p^＋ on the patterned n-well in standard CMOS technology, which are inserted under the inductor in order to reduce the currents in the s...Dual pn junctions in lateral and vertical directions are formed by diffusing the p^＋ on the patterned n-well in standard CMOS technology, which are inserted under the inductor in order to reduce the currents in the substrate induced by the electromagnetic field from the inductor. The thickness of high resistance is not equivalent to the width of the depletion region of the vertical pn junctions,but the depth of the bottom pn junction in the substrate are both proposed and validated. For the first time, through the grounded p^＋-diffusion layer shielding the suhstrate from the electric field of the inductor, the width of the depletion regions of the lateral and vertical pn junctions are changed by increasing the voltage applied to the n wells. The quality factor is improved or reduced with the thickness of high resistance by 19%. This phenomenon validates the theory that the pn junction substrate isolation can reduce the loss caused by the currents in the substrate induced by the electromagnetic field from the inductor.展开更多
A novel MEMS inductor consisting of a planar single crystalline silicon spiral with a copper surface coating as the conductor is presented. Using a silicon-glass anodic bonding and deep etching formation-and-release p...A novel MEMS inductor consisting of a planar single crystalline silicon spiral with a copper surface coating as the conductor is presented. Using a silicon-glass anodic bonding and deep etching formation-and-release process,a 40μm-thick silicon spiral is formed, which is suspended on a glass substrate to eliminate substrate loss. The surfaces of the silicon spiral are coated with highly conformal copper by electroless plating to reduce the resis- tive loss in the conductor,with thin nickel film plated on the surface of the copper layer for final surface passivation. The fabricated inductor exhibits a self-resonance frequency higher than 15GHz,with a quality factor of about 40 and an inductance of over 5nil at 11.3GHz. Simulations based on a compact equivalent circuit model of the inductor and parameter extraction using a characteristic-function approach are carried out,and good agreement with measurements is obtained.展开更多
文摘With the rapid integration of renewable energy sources,modern power systems are increasingly challenged by heightened volatility and uncertainty.Doubly-fed variable-speed pumped storage units(DFVS-PSUs)have emerged as promising technologies for mitigating grid oscillations and enhancing system flexibility.However,the excitation converters in DFVS-PSUs are prone to significant issues such as elevated common-mode voltage(CMV)and neutral-point voltage(NPV)fluctuations,which can lead to electromagnetic interference and degrade transient performance.To address these challenges,an optimized virtual space vector pulse width modulation(OVSVPWM)strategy is proposed,aiming to suppress CMV and NPV simultaneously through coordinated multi-objective control.Specifically,a dynamic feedback mechanism is introduced to adjust the balancing factor of basic vectors in the synthesized virtual small vector in real-time,achieving autonomous balancing of the NPV.To address the excessive switching actions introduced by the OVSVPWM strategy,a phase duty ratio-based sequence reconstruction method is adopted,which reduces the total number of switching actions to half of the original.A zero-level buffering scheme is employed to reconstruct the single-phase voltage-level output sequence,achieving peak CMV suppression down to udc/6.Simulation results demonstrate that the proposed strategy significantly improves electromagnetic compatibility and operational stability while maintaining high power quality.
文摘Rectifiers with high efficiency and high power density are crucial to the stable and efficient power supply of 5G communication base stations,which deserves in-depth investigation.In general,there are two key problems to be addressed:supporting both alternating current(AC)and direct current(DC)input,and minimizing the common-mode voltage as well as leakage current for safety reasons.In this paper,a hybrid five-level single-phase rectifier is proposed.A five-level topology is adopted in the upper arm,and a half-bridge diode topology is adopted in the lower arm.A dual closed-loop control strategy and a flying capacitor voltage regulation method are designed accordingly so that the compatibility of both AC and DC input is realized with low common voltage and small passive devices.Simulation and experimental results demonstrate the effectiveness and performance of the proposed rectifier.
基金supported in part by the National Natural Science Foundation of China under Grant 51907116in part sponsored by Natural Science Foundation of Shanghai 22ZR1425400sponsored by Shanghai Rising-Star Program 23QA1404000。
文摘Insulation failure significantly contributes to the unpredictable shutdown of power equipment.Compared to the partial discharge and high-frequency(HF)injection methods,the HF common-mode(CM)leakage current method offers a non-intrusive and highly sensitive alternative.However,the detection of HF CM currents is susceptible to interference from differential-mode(DM)currents,which exhibit high-amplitude and multifrequency components during normal operation.To address this challenge,this paper proposes a double-ring current sensor based on the principle of magnetic shielding for inverter-fed machine winding insulation monitoring.The inner ring harnesses the magnetic aggregation effect to isolate the DM current magnetic field,whereas the outer ring serves as the magnetic core of the Rogowski current sensor,enabling HF CM current monitoring.First,the magnetic field distributions of the CM and DM currents were analyzed.Then,a correlation between the sensor parameters and signal-to-noise ratio of the target HF CM current was established.Finally,an experimental study was conducted on a 3-kW PMSM for verification.The results indicate that the proposed double-ring HF CM sensor can effectively mitigate DM current interference.Compared to a single-ring sensor,a reduction of approximately 40%in the DM component was achieved,which significantly enhanced the precision of online insulation monitoring.
文摘The balanced operational amplifier including its merits and designing methods is discussed by comparing its performance to a conventional differential output amplifier when used in a single balanced stage. A balanced OTA circuit design is also presented.
文摘A new method for reducing the substrate rated losses of integrated spiral inductors is presented.The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the Si substrate. The substrate pn junction can be realized by using the standard silicon technologies without any additional processing steps.Integrated inductors on silicon are designed and fabricated. S parameters of the inductor based equivalent circuit are investigated and the inductor parameters are calculated.The impacts of the substrate pn junction isolation on the inductor quality factor are studied.The experimental results show that substrate pn junction isolation in certain depth has achieved a significant improvement.At 3GHz,the substrate pn junction isolation increases the inductor quality factor by 40%.
文摘A new structure of the on- chip integrated inductors im plem ented in conventional Si process is presented as a lateral solenoid.The fabrication process utilizes a conventional Si technology with standard double- layer m etal- lization.S param eters of the inductors based equivalent circuit are investigated and the inductor parameters are cal- culated from the m easured data.Experimental results are presented on an integrated inductors fabricated in a lateral solenoid type utilizing double m etal layers rather than a single metal layer as used in conventional planar spiral de- vices.Inductors with peak Q of 1.3and inductance value of 2 .2 n H are presented,which are com parable to conven- tional planar spiral inductors.
文摘To decrease the metal losses of RF spiral inductor,a novel layout structure with gradually reduced metal line width and space from outside to inside is presented. This gradual changed inductor has less eddy-current effect than the conventional inductor of fixed metal width and space. So the series resistance can be reduced and the quality （Q） factor of the inductor relating to metal losses is increased. The obtained experimental results corroborate the validity of the proposed method. For a 6nH inductor on high-resistivity silicon at 2.46GHz,Q factor of 14.25 is 11.3% higher than the conventional inductor with the same layout size. This inductor can be integrated with radio frequency integrated circuits to gain better performance in RF front end of a wireless communication system.
文摘An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyzed. Circuit element parameters are extracted from RF measurements. Compared with the reference air-core inductor without magnetic film, L and Q of the ferrite thin-film inductor are 17% and 40% higher at 2GHz,respectively. Both the equivalent circuit analysis and test results demonstrate significant enhancement of the performance of RF integration inductors by ferrite thin-film integration.
文摘A voltage controlled oscillator (VCO) which can generate 2 4GHz quadrature local oscillating (LO) signals is reported.It combines a LC VCO,realized by on chip symmetrical spiral inductors and differential diodes,and a two stage ring VCO.The principle of this VCO is demonstrated and further the phase noise is discussed in detail.The fabrication of prototype is demonstrated using 0 25μm single poly five metal N well salicide CMOS digital process.The reports show that the novel VCO is can generate quadrature LO signals with a tuning range of more than 300MHz as well as the phase noise--104 33dBc/Hz at 600KHz offset at 2 41GHz (when measuring only one port of differential outputs).In addition,this VCO can work in low power supply voltage and dissipate low power,thus it can be used in many integrated transceivers.
文摘A distributed capacitance model for monolithic inductors is developed to predict the equivalently parasitical capacitances of the inductor.The ratio of the self-resonant frequency (f SR) of the differential-driven symmetric inductor to the f SR of the single-ended driven inductor is firstly predicted and explained.Compared with a single-ended configuration,experimental data demonstrate that the differential inductor offers a 127% greater maximum quality factor and a broader range of operating frequencies.Two differential inductors with low parasitical capacitance are developed and validated.
文摘A novel local-dielectric-thickening technique i s presented for performance improvements of Si-based spiral inductors.This technique employs the processes of deposition,photolithography,and wet-etching,to locally thicken the oxide layer under the inductor,which can decrease the substrate loss and improve the inductor performance.Both the structures and processes are compact,economical,and compatible with CMOS processing.Several square spiral inductors with different inductances are fabricated,and the quality factors and the self-resonant frequencies both increase clearly with this proposed technique:for the 10nH,5nH,and 2nH inductors,the peak quality factors are effectively improved by 46.7%,49.7%,and 68.6%,respectively;however,the improvement percents of the self-resonant frequencies are more significant,which are 92.1%,91.0%,and no less than 68.1% respectively.
文摘Dual pn junctions in lateral and vertical directions are formed by diffusing the p^＋ on the patterned n-well in standard CMOS technology, which are inserted under the inductor in order to reduce the currents in the substrate induced by the electromagnetic field from the inductor. The thickness of high resistance is not equivalent to the width of the depletion region of the vertical pn junctions,but the depth of the bottom pn junction in the substrate are both proposed and validated. For the first time, through the grounded p^＋-diffusion layer shielding the suhstrate from the electric field of the inductor, the width of the depletion regions of the lateral and vertical pn junctions are changed by increasing the voltage applied to the n wells. The quality factor is improved or reduced with the thickness of high resistance by 19%. This phenomenon validates the theory that the pn junction substrate isolation can reduce the loss caused by the currents in the substrate induced by the electromagnetic field from the inductor.
文摘A novel MEMS inductor consisting of a planar single crystalline silicon spiral with a copper surface coating as the conductor is presented. Using a silicon-glass anodic bonding and deep etching formation-and-release process,a 40μm-thick silicon spiral is formed, which is suspended on a glass substrate to eliminate substrate loss. The surfaces of the silicon spiral are coated with highly conformal copper by electroless plating to reduce the resis- tive loss in the conductor,with thin nickel film plated on the surface of the copper layer for final surface passivation. The fabricated inductor exhibits a self-resonance frequency higher than 15GHz,with a quality factor of about 40 and an inductance of over 5nil at 11.3GHz. Simulations based on a compact equivalent circuit model of the inductor and parameter extraction using a characteristic-function approach are carried out,and good agreement with measurements is obtained.
