This paper describes a multimode high-resolution digital pulse width modulator.This modulator,based on a novel hybrid structure,not only has a programmable duty cycle but also realizes phase modulation.A 576 ps pulse ...This paper describes a multimode high-resolution digital pulse width modulator.This modulator,based on a novel hybrid structure,not only has a programmable duty cycle but also realizes phase modulation.A 576 ps pulse resolution is achieved based on a 13.56 MHz switching frequency for near field communication.Fabricated in a SMIC 0.18-μm EEPROM CMOS process,the total area of modulator is only 130×180μm2.Measurement results validate the multi-mode modulation function and high pulse resolution.展开更多
In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different ph...In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different phase profiles,can be transformed into each other.In principle,the LP and OAM modes have a different mode spatial intensity distribution and a gain difference for FM-EDF amplifiers.How to analyze and characterize the differential mode-bases gain(DMBG)is important,but still an issue.We build,for the first time to our knowledge,a local analysis model composed of discrete elements of the FM-EDF cross section in areas of mode spatial intensity distribution azimuthal variation.Using the model of the two mode bases,analysis of local particle number distribution and detailed description of the local gain difference are realized,and the overall gain difference between the two mode bases is obtained.By building an amplifier system based on mode phase profile controlling,the gain of two mode bases is characterized experimentally.The measured DMBG is∼0.8 dB in the second-order mode,which is consistent with the simulation result.This result provides a potential way to reduce the mode gain difference in the FM-EDF,which is important in improving the performance of the SDM communication system.展开更多
In this article,a graphic design method for broadband Doherty power amplifier(DPA) is proposed based on the basic principle of impedance matching with the help of Smith chart.The proposed graphic method avoids the com...In this article,a graphic design method for broadband Doherty power amplifier(DPA) is proposed based on the basic principle of impedance matching with the help of Smith chart.The proposed graphic method avoids the complex formula derivation in the traditional amplifier circuit design process,and the design process is more simple and intuitive.Besides,it only takes three steps to build the load modulation network(LMN) of two power amplifiers(PA) of the DPA.Besides,a capacitor is used to replace the parasitic parameters of the transistor,and the LMN designed in the two modes is used for exploration and comparison.Further more,the output impedance of the peaking PA is introduced to make the reflection coefficient trajectory on Smith chart lowfrequency dispersion so as to expand the bandwidth of the DPA at the output power back-off(OBO) level.It would not affect the performance of DPA in the saturation(SAT) state.In this way,a broadband DPA can be implemented easily.To validate the proposed design method,a broadband DPA operating from 1.9to 2.6 GHz is designed and measured based on the proposed method.Under the continuous-wave excitation,the fabricated DPA has a 6 dB OBO efficiency of 48%-56% and a SAT efficiency of 64%-73% from 1.75 to 2.45 GHz,and the peak output power is 48.9-49.8 dBm.展开更多
Optical nonreciprocal transmission with unidirectional amplification in a gain-assisted cavity-QED system is investigated.The results demonstrate that unidirectional amplification of this system is induced by the phas...Optical nonreciprocal transmission with unidirectional amplification in a gain-assisted cavity-QED system is investigated.The results demonstrate that unidirectional amplification of this system is induced by the phase difference between the atom-cavity coupling strengths associated with the optical gain and a phase-controlled unidirectional amplifier can be achieved.The optimal parameter conditions for the observation of ideal unidirectional amplification are obtained analytically,and are shown to be dependent on phase,atom-cavity and cavity-cavity coupling strength,and atomic dissipation.In particular,it is found that atomic dissipation is another essential condition for the realization of nonreciprocal amplification other than breaking of the time-reversal symmetry,and our unidirectional amplifier is robust against atom-cavity coupling mismatch.Such unidirectional amplifiers are crucial nonreciprocal devices for controlling photon transmission and may have potential applications in quantum information processing.展开更多
We propose an optimization method based on evolutionary computation for the design of broadband high-efficiency current-biased reverse load-modulation power amplifiers(CB-RLM PAs).First,given the reverse load-modulati...We propose an optimization method based on evolutionary computation for the design of broadband high-efficiency current-biased reverse load-modulation power amplifiers(CB-RLM PAs).First,given the reverse load-modulation characteristics of CB-RLM PAs,a comprehensive objective function is proposed that combines multi-state impedance trajectory constraints with in-band performance deviations.For the saturation and 6 dB power back-off(PBO)states,approximately optimal impedance regions on the Smith chart are derived using impedance constraint circles based on load-pull simulations.These regions are used together with in-band performance deviations(e.g.,saturated efficiency,6 dB PBO efficiency,and saturated output power)for matching network optimization and design.Second,a multi-objective evolutionary algorithm based on decomposition with adaptive weights,neighborhood,and global replacement is integrated with harmonic balance simulations to optimize design parameters and evaluate performance.Finally,to validate the proposed method,a broadband CB-RLM PA operating from 0.6 to 1.8 GHz is designed and fabricated.Measurement results show that the efficiencies at saturation,6 dB PBO,and 8 dB PBO all exceed 43.6%,with saturated output power being maintained at 40.9–41.5 dBm,which confirms the feasibility and effectiveness of the proposed broadband high-efficiency CB-RLM PA optimization and design approach.展开更多
For a multi-frequency non-reciprocal optical device,we first realize multi-frequency optical non-reciprocal transmission using a non-Hermitian multi-mode resonator array.Practically,multi-frequency operation can add c...For a multi-frequency non-reciprocal optical device,we first realize multi-frequency optical non-reciprocal transmission using a non-Hermitian multi-mode resonator array.Practically,multi-frequency operation can add channels to the non-reciprocal optical device and the non-reciprocity can route optical signals and prevent the reverse flow of noise.Using the Scully–Lamb model and gain saturation effect,we accomplish dual-frequency non-reciprocal transmission by introducing nonlinearity into a linear array of four-mode resonators.The accomplishment is directly demonstrated by the non-reciprocal transmission phenomena present in the non-divergent peaks.For example,a directional cyclic amplifier is constructed with non-reciprocal units.Regarding potential applications,non-reciprocal optical systems can be employed in dual-frequency control,parallel information processing,photonic integrated circuits,optical devices and so on.展开更多
The nonchemically amplified(nonCA)polymer resists,including ionic and nonionic types,have achieved higher resolution and smaller line edge roughness(LER)than traditional chemically amplified ones.However,for polymer r...The nonchemically amplified(nonCA)polymer resists,including ionic and nonionic types,have achieved higher resolution and smaller line edge roughness(LER)than traditional chemically amplified ones.However,for polymer resists,chain entanglement is an inevitable limitation for the further reduction of LER.To overcome this problem,it is logical to apply the nonCA concept to molecule-based resists due to their advantages of monodispersity and small size.To date,only a few examples of ionic sulfonium salts-based nonCA molecular glass resists(nonCAMGRs)have been reported.They demonstrated high resolution and small LER well,but their electron beam sensitivity seemed less than ideal.To our knowledge,non-ionic sulfoxime oxime esters-based molecular resists were not reported yet,which leaves room for new round of more in-depth reserch on nonCAMGRs.Here,employing the excellent spirobixanthene backbone,we have first designed non-ionic sulfoxime oxime esters-based nonCAMGRs X4-NI-tf and X4-NI-tfb,for comparison,sulfonium salts-based nonCAMGRs X4-I-otfdm was designed.All exhibit favorable thermal properties(T_(d,5%)>200°C)and filmforming capabilities(RMSs<0.4 nm).Via EBL,X4-I-otfdm achieved higher resolution(16 nm,LER 1.4 nm)than X4-NI-tf and X4-NI-tfb(20 nm,LER 1.6 nm).But contrast curve revealed that the sensitivity of X4-NI-tf and X4-NI-tfb(D_(100):370 and 350μC/cm^(2))was significantly higher than X4-I-otfdm(D_(100):3300μC/cm^(2)),demonstrating that the sensitivity of sulfoxime oxime esters exceeds that of sulfonium salts and introduction of bromine can further enhance the sensitivity;based on above,X4-NI-tfb exhibited the lowest Z-factor and demonstrated the best overall performance.We believe that nonCAMGRs based on sulfoxime oxime esters represent a strong candidate for high-performance photoresists.展开更多
A 32-channel charge-sensitive amplifier(CSA)is designed for fast timing in the delay-line readout of a parallel plate avalanche counter(PPAC)array.It is realized on a PCB with operational amplifiers and other discrete...A 32-channel charge-sensitive amplifier(CSA)is designed for fast timing in the delay-line readout of a parallel plate avalanche counter(PPAC)array.It is realized on a PCB with operational amplifiers and other discrete components.Each channel consists of an integrator,a pole-zero cancellation net,and a linear amplification stage,which can be adapted to accommodate either positive or negative input signals.The RMS equivalent input noise charges are 3.3 fC,the conversion gains are approximately±2 mV∕fC,and the intrinsic time resolution reaches 32 ps.In the prototype PPAC application,the CSA performs as well as the commercial FTA820A amplifier,providing a position resolution as good as 0.17 mm,and exhibiting reliable stability during several hours of continuous data acquisition.展开更多
To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for...To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial （MP）predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%.展开更多
Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order in...Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.展开更多
A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the paramet...A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the parameters, the back- propagation algorithm is applied to train the proposed neural networks. The proposed model is verified by the typical odd- order-only memory polynomial model in simulation, and the performance is compared with different numbers of taped delay lines（TDLs） and perceptrons of the hidden layer. For validating the TDFFNN model by experiments, a digital test bench is set up to collect input and output data of power amplifiers at a 60 × 10^6 sample/s sampling rate. The 3.75 MHz 16-QAM signal generated in the vector signal generator（VSG） is chosen as the input signal, when measuring the dynamic AM/AM and AM/PM characteristics of power amplifiers. By comparisons and analyses, the presented model provides a good performance in convergence, accuracy and efficiency, which is approved by simulation results and experimental results in the time domain and frequency domain.展开更多
A CMOS radio frequency low noise amplifier with high linearity and low operation voltage of less than 1.0V is presented.In this circuit,an auxiliary MOSFET in the triode region is used to boost the linearity.Simulatio...A CMOS radio frequency low noise amplifier with high linearity and low operation voltage of less than 1.0V is presented.In this circuit,an auxiliary MOSFET in the triode region is used to boost the linearity.Simulation shows that this method can boost the input-referred 3rd-order intercept point with much less power dissipation than that of traditional power/linearity tradeoff solution which pays at least 1dB power for 1dB linearity improvement.It is also shown that the size of the common-gate PMOS transistor needs to be optimized to reduce its loaded input impedance so as not to degrade the linearity due to high voltage gain at its source terminal.The simulation is carried out with TSMC 0.18μm RF CMOS technology and SpectreRF.展开更多
A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performanc...A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performances than previous works. Implemented in standard 0.35μm CMOS technology, our three-stage amplifier achieves 105dB DC gain, 3.3M GBW,68 phase margin, and 2.56V/μs average slew rate under a 150pF capacitive load. All of these are realized with only 40μW power consumption under a 2V power supply,with very small compensation capacitors.展开更多
Efficiency and linearity of the microwave power amplifier are critical elements for mobile communication systems. A memory polynomial baseband predistorter based on an indirect learning architecture is presented for i...Efficiency and linearity of the microwave power amplifier are critical elements for mobile communication systems. A memory polynomial baseband predistorter based on an indirect learning architecture is presented for improving the linearity of an envelope tracing （ET） amplifier with application to a wireless transmitter. To deal with large peak-to-average ratio （PAR） problem, a clipping procedure for the input signal is employed. Then the system performance is verified by simulation results. For a single carrier wideband code division multiple access （WCDMA） signal of 16-quadrature amplitude modulation （16-QAM）, about 2% improvement of the error vector magnitude （EVM） is achieved at an average output power of 45.5 dBm and gain of 10.6 dB, with adjacent channel leakage ratio （ACLR） of -64.55 dBc at offset frequency of 5 MHz. Moreover, a three-carrier WCDMA signal and a third-generation （3G） long term evolution （LTE） signal are used as test signals to demonstrate the performance of the proposed linearization scheme under different bandwidth signals.展开更多
We report the passive phase locking of four high power Yb-doped fiber amplifiers with ring cavity.The interference patterns at different output power are observed and the Strehl ratios are measured.The maximum coheren...We report the passive phase locking of four high power Yb-doped fiber amplifiers with ring cavity.The interference patterns at different output power are observed and the Strehl ratios are measured.The maximum coherent output power of the fiber array is up to 1062 W by multi-stage amplification.The stable beam profiles of various phase relationships are observed by controlling the position of the feedback fiber,in good agreement with the calculated results.By using master oscillator power-amplifier(MOPA)architecture and broadband operation of passively phased systems,higher power scaling with high beam quality appears to be feasible.展开更多
This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadb...This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.展开更多
To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, ...To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, are proposed for predistorter design. Two adaptive digital predistortion （ADPD） schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square （RLS） algorithm, and the other utilizes the memory LUT model and the least mean square （LMS） algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.展开更多
A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along ...A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along QD-SOA cavity are considered as state variables of the system.Simulations show that SSM calculates QD-SOA′s static and dynamic characteristics with high accuracy.展开更多
A novel and fast model of erbium-doped fiber amplifiers (EDFAs) is presented. By calculating a typical EDFA, numerical results are compared with the results obtained by spectral-solved method. The results of compariso...A novel and fast model of erbium-doped fiber amplifiers (EDFAs) is presented. By calculating a typical EDFA, numerical results are compared with the results obtained by spectral-solved method. The results of comparison show that such a model can improve the computational speed and preserve the precision. Some characteristics of the EDFA are then analyzed using this model. The results are consistent with those of the experiments.展开更多
Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully...Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward.Several approaches have been proposed and demonstrated to address this issue.In this paper,a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented.Representative device demonstrations,including ultra-narrow linewidthⅢ-Ⅴ/Si lasers,fully integratedⅢ-Ⅴ/Si/Si3N4 lasers,high-channel count mode locked quantum dot(QD)lasers,and high gain QD amplifiers will be covered.展开更多
基金Project supported by the Important National Science & Technology Specific Projects(No2009ZX03001-012-03)
文摘This paper describes a multimode high-resolution digital pulse width modulator.This modulator,based on a novel hybrid structure,not only has a programmable duty cycle but also realizes phase modulation.A 576 ps pulse resolution is achieved based on a 13.56 MHz switching frequency for near field communication.Fabricated in a SMIC 0.18-μm EEPROM CMOS process,the total area of modulator is only 130×180μm2.Measurement results validate the multi-mode modulation function and high pulse resolution.
基金supported by the National Key Research and Development Program of China(Grant No.2019YFA0706300)the National Natural Science Foundation of China(Grant Nos.U22B2010,62035018,and U2001601)+1 种基金the Program of Marine Economy Development Special Fund(Six Marine Industries)under the Department of Natural Resources of Guangdong Province(Grant No.GDNRC[2024]16)the project supported by the Southern Marine Science and Engineering Guangdong Laboratory(Zhuhai)(Grant No.SML2023SP231).
文摘In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different phase profiles,can be transformed into each other.In principle,the LP and OAM modes have a different mode spatial intensity distribution and a gain difference for FM-EDF amplifiers.How to analyze and characterize the differential mode-bases gain(DMBG)is important,but still an issue.We build,for the first time to our knowledge,a local analysis model composed of discrete elements of the FM-EDF cross section in areas of mode spatial intensity distribution azimuthal variation.Using the model of the two mode bases,analysis of local particle number distribution and detailed description of the local gain difference are realized,and the overall gain difference between the two mode bases is obtained.By building an amplifier system based on mode phase profile controlling,the gain of two mode bases is characterized experimentally.The measured DMBG is∼0.8 dB in the second-order mode,which is consistent with the simulation result.This result provides a potential way to reduce the mode gain difference in the FM-EDF,which is important in improving the performance of the SDM communication system.
基金National Natural Science Foundation of China (No. 62001061)。
文摘In this article,a graphic design method for broadband Doherty power amplifier(DPA) is proposed based on the basic principle of impedance matching with the help of Smith chart.The proposed graphic method avoids the complex formula derivation in the traditional amplifier circuit design process,and the design process is more simple and intuitive.Besides,it only takes three steps to build the load modulation network(LMN) of two power amplifiers(PA) of the DPA.Besides,a capacitor is used to replace the parasitic parameters of the transistor,and the LMN designed in the two modes is used for exploration and comparison.Further more,the output impedance of the peaking PA is introduced to make the reflection coefficient trajectory on Smith chart lowfrequency dispersion so as to expand the bandwidth of the DPA at the output power back-off(OBO) level.It would not affect the performance of DPA in the saturation(SAT) state.In this way,a broadband DPA can be implemented easily.To validate the proposed design method,a broadband DPA operating from 1.9to 2.6 GHz is designed and measured based on the proposed method.Under the continuous-wave excitation,the fabricated DPA has a 6 dB OBO efficiency of 48%-56% and a SAT efficiency of 64%-73% from 1.75 to 2.45 GHz,and the peak output power is 48.9-49.8 dBm.
基金supported by China Postdoctoral Science Foundation(2023M732028)Zhejiang Province Key Laboratory of Quantum Technology and Device(20230201)+1 种基金National Key Research and Development Program of China(2021YFA1400602)National Natural Science Foundation of China(11864018,12164022,12174288,12274326)。
文摘Optical nonreciprocal transmission with unidirectional amplification in a gain-assisted cavity-QED system is investigated.The results demonstrate that unidirectional amplification of this system is induced by the phase difference between the atom-cavity coupling strengths associated with the optical gain and a phase-controlled unidirectional amplifier can be achieved.The optimal parameter conditions for the observation of ideal unidirectional amplification are obtained analytically,and are shown to be dependent on phase,atom-cavity and cavity-cavity coupling strength,and atomic dissipation.In particular,it is found that atomic dissipation is another essential condition for the realization of nonreciprocal amplification other than breaking of the time-reversal symmetry,and our unidirectional amplifier is robust against atom-cavity coupling mismatch.Such unidirectional amplifiers are crucial nonreciprocal devices for controlling photon transmission and may have potential applications in quantum information processing.
基金supported by the National Natural Science Foundation of China(Nos.62171204,62171129,62001192).
文摘We propose an optimization method based on evolutionary computation for the design of broadband high-efficiency current-biased reverse load-modulation power amplifiers(CB-RLM PAs).First,given the reverse load-modulation characteristics of CB-RLM PAs,a comprehensive objective function is proposed that combines multi-state impedance trajectory constraints with in-band performance deviations.For the saturation and 6 dB power back-off(PBO)states,approximately optimal impedance regions on the Smith chart are derived using impedance constraint circles based on load-pull simulations.These regions are used together with in-band performance deviations(e.g.,saturated efficiency,6 dB PBO efficiency,and saturated output power)for matching network optimization and design.Second,a multi-objective evolutionary algorithm based on decomposition with adaptive weights,neighborhood,and global replacement is integrated with harmonic balance simulations to optimize design parameters and evaluate performance.Finally,to validate the proposed method,a broadband CB-RLM PA operating from 0.6 to 1.8 GHz is designed and fabricated.Measurement results show that the efficiencies at saturation,6 dB PBO,and 8 dB PBO all exceed 43.6%,with saturated output power being maintained at 40.9–41.5 dBm,which confirms the feasibility and effectiveness of the proposed broadband high-efficiency CB-RLM PA optimization and design approach.
基金supported by the National Nature Science Foundation of China(Grant Nos.12475019 and 12073056)the Major National Science and Technology Project of China(Grant No.BX2024B054)+1 种基金National Lab of Solid State Microstructure of Nanjing University(Grant Nos.M35040,M35053,and M37014)the Natural Science Foundation of Shandong Province(Grant No.ZR2024MA038)。
文摘For a multi-frequency non-reciprocal optical device,we first realize multi-frequency optical non-reciprocal transmission using a non-Hermitian multi-mode resonator array.Practically,multi-frequency operation can add channels to the non-reciprocal optical device and the non-reciprocity can route optical signals and prevent the reverse flow of noise.Using the Scully–Lamb model and gain saturation effect,we accomplish dual-frequency non-reciprocal transmission by introducing nonlinearity into a linear array of four-mode resonators.The accomplishment is directly demonstrated by the non-reciprocal transmission phenomena present in the non-divergent peaks.For example,a directional cyclic amplifier is constructed with non-reciprocal units.Regarding potential applications,non-reciprocal optical systems can be employed in dual-frequency control,parallel information processing,photonic integrated circuits,optical devices and so on.
基金supported by the National Natural Science Foundation of China(No.22278059,22174009,22078047)Fundamental Research Funds for the Central Universities(No.DUT24ZD119,DUT22LAB601 and DUT22LAB608).
文摘The nonchemically amplified(nonCA)polymer resists,including ionic and nonionic types,have achieved higher resolution and smaller line edge roughness(LER)than traditional chemically amplified ones.However,for polymer resists,chain entanglement is an inevitable limitation for the further reduction of LER.To overcome this problem,it is logical to apply the nonCA concept to molecule-based resists due to their advantages of monodispersity and small size.To date,only a few examples of ionic sulfonium salts-based nonCA molecular glass resists(nonCAMGRs)have been reported.They demonstrated high resolution and small LER well,but their electron beam sensitivity seemed less than ideal.To our knowledge,non-ionic sulfoxime oxime esters-based molecular resists were not reported yet,which leaves room for new round of more in-depth reserch on nonCAMGRs.Here,employing the excellent spirobixanthene backbone,we have first designed non-ionic sulfoxime oxime esters-based nonCAMGRs X4-NI-tf and X4-NI-tfb,for comparison,sulfonium salts-based nonCAMGRs X4-I-otfdm was designed.All exhibit favorable thermal properties(T_(d,5%)>200°C)and filmforming capabilities(RMSs<0.4 nm).Via EBL,X4-I-otfdm achieved higher resolution(16 nm,LER 1.4 nm)than X4-NI-tf and X4-NI-tfb(20 nm,LER 1.6 nm).But contrast curve revealed that the sensitivity of X4-NI-tf and X4-NI-tfb(D_(100):370 and 350μC/cm^(2))was significantly higher than X4-I-otfdm(D_(100):3300μC/cm^(2)),demonstrating that the sensitivity of sulfoxime oxime esters exceeds that of sulfonium salts and introduction of bromine can further enhance the sensitivity;based on above,X4-NI-tfb exhibited the lowest Z-factor and demonstrated the best overall performance.We believe that nonCAMGRs based on sulfoxime oxime esters represent a strong candidate for high-performance photoresists.
基金supported by the National Natural Science Foundation of China(Nos.U2167202,12225504,12005276)the Natural Science Foundation of Shandong Province(No.ZR2024QA172)the Fundamental Research Funds of Shandong University.
文摘A 32-channel charge-sensitive amplifier(CSA)is designed for fast timing in the delay-line readout of a parallel plate avalanche counter(PPAC)array.It is realized on a PCB with operational amplifiers and other discrete components.Each channel consists of an integrator,a pole-zero cancellation net,and a linear amplification stage,which can be adapted to accommodate either positive or negative input signals.The RMS equivalent input noise charges are 3.3 fC,the conversion gains are approximately±2 mV∕fC,and the intrinsic time resolution reaches 32 ps.In the prototype PPAC application,the CSA performs as well as the commercial FTA820A amplifier,providing a position resolution as good as 0.17 mm,and exhibiting reliable stability during several hours of continuous data acquisition.
基金The National High Technology Research and Development Program of China (863 Program) (No.2008AA01Z211)the Project of Industry-Academia-Research Demonstration Base of Education Ministry of Guangdong Province (No.2007B090200012)
文摘To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial （MP）predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%.
文摘Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.
基金The National Natural Science Foundation of China(No.60621002)the National High Technology Research and Development Pro-gram of China(863 Program)(No.2007AA01Z2B4).
文摘A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the parameters, the back- propagation algorithm is applied to train the proposed neural networks. The proposed model is verified by the typical odd- order-only memory polynomial model in simulation, and the performance is compared with different numbers of taped delay lines（TDLs） and perceptrons of the hidden layer. For validating the TDFFNN model by experiments, a digital test bench is set up to collect input and output data of power amplifiers at a 60 × 10^6 sample/s sampling rate. The 3.75 MHz 16-QAM signal generated in the vector signal generator（VSG） is chosen as the input signal, when measuring the dynamic AM/AM and AM/PM characteristics of power amplifiers. By comparisons and analyses, the presented model provides a good performance in convergence, accuracy and efficiency, which is approved by simulation results and experimental results in the time domain and frequency domain.
文摘A CMOS radio frequency low noise amplifier with high linearity and low operation voltage of less than 1.0V is presented.In this circuit,an auxiliary MOSFET in the triode region is used to boost the linearity.Simulation shows that this method can boost the input-referred 3rd-order intercept point with much less power dissipation than that of traditional power/linearity tradeoff solution which pays at least 1dB power for 1dB linearity improvement.It is also shown that the size of the common-gate PMOS transistor needs to be optimized to reduce its loaded input impedance so as not to degrade the linearity due to high voltage gain at its source terminal.The simulation is carried out with TSMC 0.18μm RF CMOS technology and SpectreRF.
文摘A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performances than previous works. Implemented in standard 0.35μm CMOS technology, our three-stage amplifier achieves 105dB DC gain, 3.3M GBW,68 phase margin, and 2.56V/μs average slew rate under a 150pF capacitive load. All of these are realized with only 40μW power consumption under a 2V power supply,with very small compensation capacitors.
基金supported by the National High Technology Researchand Development Program of China (863 Program) (YJCB2008023WL)
文摘Efficiency and linearity of the microwave power amplifier are critical elements for mobile communication systems. A memory polynomial baseband predistorter based on an indirect learning architecture is presented for improving the linearity of an envelope tracing （ET） amplifier with application to a wireless transmitter. To deal with large peak-to-average ratio （PAR） problem, a clipping procedure for the input signal is employed. Then the system performance is verified by simulation results. For a single carrier wideband code division multiple access （WCDMA） signal of 16-quadrature amplitude modulation （16-QAM）, about 2% improvement of the error vector magnitude （EVM） is achieved at an average output power of 45.5 dBm and gain of 10.6 dB, with adjacent channel leakage ratio （ACLR） of -64.55 dBc at offset frequency of 5 MHz. Moreover, a three-carrier WCDMA signal and a third-generation （3G） long term evolution （LTE） signal are used as test signals to demonstrate the performance of the proposed linearization scheme under different bandwidth signals.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60908011 and 60907045the National High Technology Research and Development Program of China under Grant No 2008AA03Z405the National Science and Technology Major Project of China under Grant No 2010ZX04013 and the Shanghai“Phosphor”Science Foundation under Grant No 09QB1401700.
文摘We report the passive phase locking of four high power Yb-doped fiber amplifiers with ring cavity.The interference patterns at different output power are observed and the Strehl ratios are measured.The maximum coherent output power of the fiber array is up to 1062 W by multi-stage amplification.The stable beam profiles of various phase relationships are observed by controlling the position of the feedback fiber,in good agreement with the calculated results.By using master oscillator power-amplifier(MOPA)architecture and broadband operation of passively phased systems,higher power scaling with high beam quality appears to be feasible.
文摘This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.
文摘To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, are proposed for predistorter design. Two adaptive digital predistortion （ADPD） schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square （RLS） algorithm, and the other utilizes the memory LUT model and the least mean square （LMS） algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.
文摘A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along QD-SOA cavity are considered as state variables of the system.Simulations show that SSM calculates QD-SOA′s static and dynamic characteristics with high accuracy.
文摘A novel and fast model of erbium-doped fiber amplifiers (EDFAs) is presented. By calculating a typical EDFA, numerical results are compared with the results obtained by spectral-solved method. The results of comparison show that such a model can improve the computational speed and preserve the precision. Some characteristics of the EDFA are then analyzed using this model. The results are consistent with those of the experiments.
文摘Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward.Several approaches have been proposed and demonstrated to address this issue.In this paper,a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented.Representative device demonstrations,including ultra-narrow linewidthⅢ-Ⅴ/Si lasers,fully integratedⅢ-Ⅴ/Si/Si3N4 lasers,high-channel count mode locked quantum dot(QD)lasers,and high gain QD amplifiers will be covered.
