This paper describes a multimode high-resolution digital pulse width modulator.This modulator,based on a novel hybrid structure,not only has a programmable duty cycle but also realizes phase modulation.A 576 ps pulse ...This paper describes a multimode high-resolution digital pulse width modulator.This modulator,based on a novel hybrid structure,not only has a programmable duty cycle but also realizes phase modulation.A 576 ps pulse resolution is achieved based on a 13.56 MHz switching frequency for near field communication.Fabricated in a SMIC 0.18-μm EEPROM CMOS process,the total area of modulator is only 130×180μm2.Measurement results validate the multi-mode modulation function and high pulse resolution.展开更多
In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different ph...In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different phase profiles,can be transformed into each other.In principle,the LP and OAM modes have a different mode spatial intensity distribution and a gain difference for FM-EDF amplifiers.How to analyze and characterize the differential mode-bases gain(DMBG)is important,but still an issue.We build,for the first time to our knowledge,a local analysis model composed of discrete elements of the FM-EDF cross section in areas of mode spatial intensity distribution azimuthal variation.Using the model of the two mode bases,analysis of local particle number distribution and detailed description of the local gain difference are realized,and the overall gain difference between the two mode bases is obtained.By building an amplifier system based on mode phase profile controlling,the gain of two mode bases is characterized experimentally.The measured DMBG is∼0.8 dB in the second-order mode,which is consistent with the simulation result.This result provides a potential way to reduce the mode gain difference in the FM-EDF,which is important in improving the performance of the SDM communication system.展开更多
To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for...To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial （MP）predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%.展开更多
Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order in...Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.展开更多
A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the paramet...A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the parameters, the back- propagation algorithm is applied to train the proposed neural networks. The proposed model is verified by the typical odd- order-only memory polynomial model in simulation, and the performance is compared with different numbers of taped delay lines（TDLs） and perceptrons of the hidden layer. For validating the TDFFNN model by experiments, a digital test bench is set up to collect input and output data of power amplifiers at a 60 × 10^6 sample/s sampling rate. The 3.75 MHz 16-QAM signal generated in the vector signal generator（VSG） is chosen as the input signal, when measuring the dynamic AM/AM and AM/PM characteristics of power amplifiers. By comparisons and analyses, the presented model provides a good performance in convergence, accuracy and efficiency, which is approved by simulation results and experimental results in the time domain and frequency domain.展开更多
A CMOS radio frequency low noise amplifier with high linearity and low operation voltage of less than 1.0V is presented.In this circuit,an auxiliary MOSFET in the triode region is used to boost the linearity.Simulatio...A CMOS radio frequency low noise amplifier with high linearity and low operation voltage of less than 1.0V is presented.In this circuit,an auxiliary MOSFET in the triode region is used to boost the linearity.Simulation shows that this method can boost the input-referred 3rd-order intercept point with much less power dissipation than that of traditional power/linearity tradeoff solution which pays at least 1dB power for 1dB linearity improvement.It is also shown that the size of the common-gate PMOS transistor needs to be optimized to reduce its loaded input impedance so as not to degrade the linearity due to high voltage gain at its source terminal.The simulation is carried out with TSMC 0.18μm RF CMOS technology and SpectreRF.展开更多
A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performanc...A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performances than previous works. Implemented in standard 0.35μm CMOS technology, our three-stage amplifier achieves 105dB DC gain, 3.3M GBW,68 phase margin, and 2.56V/μs average slew rate under a 150pF capacitive load. All of these are realized with only 40μW power consumption under a 2V power supply,with very small compensation capacitors.展开更多
Efficiency and linearity of the microwave power amplifier are critical elements for mobile communication systems. A memory polynomial baseband predistorter based on an indirect learning architecture is presented for i...Efficiency and linearity of the microwave power amplifier are critical elements for mobile communication systems. A memory polynomial baseband predistorter based on an indirect learning architecture is presented for improving the linearity of an envelope tracing （ET） amplifier with application to a wireless transmitter. To deal with large peak-to-average ratio （PAR） problem, a clipping procedure for the input signal is employed. Then the system performance is verified by simulation results. For a single carrier wideband code division multiple access （WCDMA） signal of 16-quadrature amplitude modulation （16-QAM）, about 2% improvement of the error vector magnitude （EVM） is achieved at an average output power of 45.5 dBm and gain of 10.6 dB, with adjacent channel leakage ratio （ACLR） of -64.55 dBc at offset frequency of 5 MHz. Moreover, a three-carrier WCDMA signal and a third-generation （3G） long term evolution （LTE） signal are used as test signals to demonstrate the performance of the proposed linearization scheme under different bandwidth signals.展开更多
We report the passive phase locking of four high power Yb-doped fiber amplifiers with ring cavity.The interference patterns at different output power are observed and the Strehl ratios are measured.The maximum coheren...We report the passive phase locking of four high power Yb-doped fiber amplifiers with ring cavity.The interference patterns at different output power are observed and the Strehl ratios are measured.The maximum coherent output power of the fiber array is up to 1062 W by multi-stage amplification.The stable beam profiles of various phase relationships are observed by controlling the position of the feedback fiber,in good agreement with the calculated results.By using master oscillator power-amplifier(MOPA)architecture and broadband operation of passively phased systems,higher power scaling with high beam quality appears to be feasible.展开更多
This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadb...This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.展开更多
To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, ...To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, are proposed for predistorter design. Two adaptive digital predistortion （ADPD） schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square （RLS） algorithm, and the other utilizes the memory LUT model and the least mean square （LMS） algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.展开更多
A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along ...A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along QD-SOA cavity are considered as state variables of the system.Simulations show that SSM calculates QD-SOA′s static and dynamic characteristics with high accuracy.展开更多
Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully...Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward.Several approaches have been proposed and demonstrated to address this issue.In this paper,a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented.Representative device demonstrations,including ultra-narrow linewidthⅢ-Ⅴ/Si lasers,fully integratedⅢ-Ⅴ/Si/Si3N4 lasers,high-channel count mode locked quantum dot(QD)lasers,and high gain QD amplifiers will be covered.展开更多
A novel and fast model of erbium-doped fiber amplifiers (EDFAs) is presented. By calculating a typical EDFA, numerical results are compared with the results obtained by spectral-solved method. The results of compariso...A novel and fast model of erbium-doped fiber amplifiers (EDFAs) is presented. By calculating a typical EDFA, numerical results are compared with the results obtained by spectral-solved method. The results of comparison show that such a model can improve the computational speed and preserve the precision. Some characteristics of the EDFA are then analyzed using this model. The results are consistent with those of the experiments.展开更多
In this paper,a 5G wideband power amplifier(PA)with bandpass filtering response is synthesized using a bandwidth-extended bandpass filter as the matching network(MN).In this structure,the bandwidth(θ_(C))is defined a...In this paper,a 5G wideband power amplifier(PA)with bandpass filtering response is synthesized using a bandwidth-extended bandpass filter as the matching network(MN).In this structure,the bandwidth(θ_(C))is defined as a variable in the closedform equations provided by the microstrip bandpass filter.It can be extended over a wide range only by changing the characteristic impedances of the structure.Different from the other wideband MNs,the extension of bandwidth does not increase the complexity of the structure(order n is fixed).In addition,based on the bandwidth-extended structure,the wideband design of bandpass filtering PA is not limited to the fixed bandwidth of the specific filter structure.The theoretical analysis of the MN and the design flow of the PA are provided in this design.The fabricated bandpass filtering PA can support almost one-octave bandwidth(2-3.8 GHz),covering the two 5G bands(n41 and n78).The drain efficiency of 47%-60%and output power higher than 40 dBm are measured.Good frequency selectivity in S-parameter measurements can be observed.展开更多
A scheme of double grating expanders is first proposed for high energy chirped pulse amplifiers.It is demonstrated that they can compensate for the amplifier's material dispersion up to the fourth-order,together w...A scheme of double grating expanders is first proposed for high energy chirped pulse amplifiers.It is demonstrated that they can compensate for the amplifier's material dispersion up to the fourth-order,together with a suitable grating compressor.The scheme makes it possible that the pulse expansion in Chirped pulse amplifiers(CPAs)is no longer restricted by the material dispersion,and the corresponding grating compressor can be independently optimized according to the available gratings'size and damage threshold.展开更多
In this letter, a novel model is proposed for modeling the nonlinearity and memory effects of power amplifiers. The classical Volterra model is modified through a function of the sum of nonlinearity order with sum of ...In this letter, a novel model is proposed for modeling the nonlinearity and memory effects of power amplifiers. The classical Volterra model is modified through a function of the sum of nonlinearity order with sum of memory length. The parameters of this model can be extracted in digital domain since the model is analyzed based on the envelope signals. The model we proposed enables a substantial reduction in the number of coefficients involved, and with excellent accuracy.展开更多
Quasi-PID control method that is able to effectively inhibit the inherent tracking error of PI control method is proposed on the basis of a rounded theoretical analysis of a model of switching power amplifiers (SPAs)....Quasi-PID control method that is able to effectively inhibit the inherent tracking error of PI control method is proposed on the basis of a rounded theoretical analysis of a model of switching power amplifiers (SPAs). To avoid the harmful impacts of the circuit parameter variations and the random disturbances on quasi-PID control method, a single neuron is introduced to endow it with self-adaptability. Quasi-PID control method and the single neuron combine with each other perfectly, and their formation is named as single-neuron adaptive quasi-PID control method. Simulation and experimental results show that single-neuron adaptive quasi-PID control method can accurately track both the predictable and the unpredictable waveforms. Quantitative analysis demonstrates that the accuracy of single-neuron adaptive quasi-PID control method is comparable to that of linear power amplifiers (LPAs) and so can fulfill the requirements of some high-accuracy applications, such as protective relay test. Such accuracy is very difficult to be achieved by many modern control methods for converter controls. Compared with other modern control methods, the programming realization of single-neuron adaptive quasi-PID control method is more suitable for real-time applications and realization on low-end microprocessors for its simple structure and lower computational complexity.展开更多
The developing tendency of continuous-variable （CV） measurement-device-independent （MDI） quantum cryptography is to cope with the practical issue of implementing sealable quantum networks. Up to now, most theoreti...The developing tendency of continuous-variable （CV） measurement-device-independent （MDI） quantum cryptography is to cope with the practical issue of implementing sealable quantum networks. Up to now, most theoretical and experimental researches on CV-MDI QKD are focused on two-party protocols. However, we suggest a CV-MDI multipartite quantum secret sharing （QSS） protocol use the EPR states coupled with optical amplifiers. More remarkable, QSS is the real application in multipartite CV-MDI QKD, in other words, is the concrete implementation method of multipartite CV-MDI QKD. It can implement a practical quantum network scheme, under which the legal participants create the secret correlations by using EPR states connecting to an untrusted relay via insecure links and applying the multi-entangled Greenberger-Horne-Zeilinger （GHZ） state analysis at relay station. Even if there is a possibility that the relay may be completely tampered, the legal participants are still able to extract a secret key from network communication. The numerical simulation indicates that the quantum network communication can be achieved in an asymmetric scenario, fulfilling the demands of a practical quantum network. Additionally, we illustrate that the use of optical amplifiers can compensate the partial inherent imperfections of detectors and increase the transmission distance of the CV-MDI quantum system.展开更多
Based on the transfer matrix method, we present a new one-dimensional steady-state model of vertical-cavity semiconductor optical amplifiers （VCSOAs）, in which the longitudinal carrier concentration distribution in ...Based on the transfer matrix method, we present a new one-dimensional steady-state model of vertical-cavity semiconductor optical amplifiers （VCSOAs）, in which the longitudinal carrier concentration distribution in the active region and the discontinuity of the refractive index inside the cavity is taken into consideration. The model is theoretically proven to be a reliable one for describing the standing wave effect in a periodic gain structure. By using this model, some optical amplification characteristics of VCSOAs are investigated.展开更多
基金Project supported by the Important National Science & Technology Specific Projects(No2009ZX03001-012-03)
文摘This paper describes a multimode high-resolution digital pulse width modulator.This modulator,based on a novel hybrid structure,not only has a programmable duty cycle but also realizes phase modulation.A 576 ps pulse resolution is achieved based on a 13.56 MHz switching frequency for near field communication.Fabricated in a SMIC 0.18-μm EEPROM CMOS process,the total area of modulator is only 130×180μm2.Measurement results validate the multi-mode modulation function and high pulse resolution.
基金supported by the National Key Research and Development Program of China(Grant No.2019YFA0706300)the National Natural Science Foundation of China(Grant Nos.U22B2010,62035018,and U2001601)+1 种基金the Program of Marine Economy Development Special Fund(Six Marine Industries)under the Department of Natural Resources of Guangdong Province(Grant No.GDNRC[2024]16)the project supported by the Southern Marine Science and Engineering Guangdong Laboratory(Zhuhai)(Grant No.SML2023SP231).
文摘In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different phase profiles,can be transformed into each other.In principle,the LP and OAM modes have a different mode spatial intensity distribution and a gain difference for FM-EDF amplifiers.How to analyze and characterize the differential mode-bases gain(DMBG)is important,but still an issue.We build,for the first time to our knowledge,a local analysis model composed of discrete elements of the FM-EDF cross section in areas of mode spatial intensity distribution azimuthal variation.Using the model of the two mode bases,analysis of local particle number distribution and detailed description of the local gain difference are realized,and the overall gain difference between the two mode bases is obtained.By building an amplifier system based on mode phase profile controlling,the gain of two mode bases is characterized experimentally.The measured DMBG is∼0.8 dB in the second-order mode,which is consistent with the simulation result.This result provides a potential way to reduce the mode gain difference in the FM-EDF,which is important in improving the performance of the SDM communication system.
基金The National High Technology Research and Development Program of China (863 Program) (No.2008AA01Z211)the Project of Industry-Academia-Research Demonstration Base of Education Ministry of Guangdong Province (No.2007B090200012)
文摘To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial （MP）predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%.
文摘Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.
基金The National Natural Science Foundation of China(No.60621002)the National High Technology Research and Development Pro-gram of China(863 Program)(No.2007AA01Z2B4).
文摘A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the parameters, the back- propagation algorithm is applied to train the proposed neural networks. The proposed model is verified by the typical odd- order-only memory polynomial model in simulation, and the performance is compared with different numbers of taped delay lines（TDLs） and perceptrons of the hidden layer. For validating the TDFFNN model by experiments, a digital test bench is set up to collect input and output data of power amplifiers at a 60 × 10^6 sample/s sampling rate. The 3.75 MHz 16-QAM signal generated in the vector signal generator（VSG） is chosen as the input signal, when measuring the dynamic AM/AM and AM/PM characteristics of power amplifiers. By comparisons and analyses, the presented model provides a good performance in convergence, accuracy and efficiency, which is approved by simulation results and experimental results in the time domain and frequency domain.
文摘A CMOS radio frequency low noise amplifier with high linearity and low operation voltage of less than 1.0V is presented.In this circuit,an auxiliary MOSFET in the triode region is used to boost the linearity.Simulation shows that this method can boost the input-referred 3rd-order intercept point with much less power dissipation than that of traditional power/linearity tradeoff solution which pays at least 1dB power for 1dB linearity improvement.It is also shown that the size of the common-gate PMOS transistor needs to be optimized to reduce its loaded input impedance so as not to degrade the linearity due to high voltage gain at its source terminal.The simulation is carried out with TSMC 0.18μm RF CMOS technology and SpectreRF.
文摘A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performances than previous works. Implemented in standard 0.35μm CMOS technology, our three-stage amplifier achieves 105dB DC gain, 3.3M GBW,68 phase margin, and 2.56V/μs average slew rate under a 150pF capacitive load. All of these are realized with only 40μW power consumption under a 2V power supply,with very small compensation capacitors.
基金supported by the National High Technology Researchand Development Program of China (863 Program) (YJCB2008023WL)
文摘Efficiency and linearity of the microwave power amplifier are critical elements for mobile communication systems. A memory polynomial baseband predistorter based on an indirect learning architecture is presented for improving the linearity of an envelope tracing （ET） amplifier with application to a wireless transmitter. To deal with large peak-to-average ratio （PAR） problem, a clipping procedure for the input signal is employed. Then the system performance is verified by simulation results. For a single carrier wideband code division multiple access （WCDMA） signal of 16-quadrature amplitude modulation （16-QAM）, about 2% improvement of the error vector magnitude （EVM） is achieved at an average output power of 45.5 dBm and gain of 10.6 dB, with adjacent channel leakage ratio （ACLR） of -64.55 dBc at offset frequency of 5 MHz. Moreover, a three-carrier WCDMA signal and a third-generation （3G） long term evolution （LTE） signal are used as test signals to demonstrate the performance of the proposed linearization scheme under different bandwidth signals.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60908011 and 60907045the National High Technology Research and Development Program of China under Grant No 2008AA03Z405the National Science and Technology Major Project of China under Grant No 2010ZX04013 and the Shanghai“Phosphor”Science Foundation under Grant No 09QB1401700.
文摘We report the passive phase locking of four high power Yb-doped fiber amplifiers with ring cavity.The interference patterns at different output power are observed and the Strehl ratios are measured.The maximum coherent output power of the fiber array is up to 1062 W by multi-stage amplification.The stable beam profiles of various phase relationships are observed by controlling the position of the feedback fiber,in good agreement with the calculated results.By using master oscillator power-amplifier(MOPA)architecture and broadband operation of passively phased systems,higher power scaling with high beam quality appears to be feasible.
文摘This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.
文摘To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, are proposed for predistorter design. Two adaptive digital predistortion （ADPD） schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square （RLS） algorithm, and the other utilizes the memory LUT model and the least mean square （LMS） algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.
文摘A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along QD-SOA cavity are considered as state variables of the system.Simulations show that SSM calculates QD-SOA′s static and dynamic characteristics with high accuracy.
文摘Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward.Several approaches have been proposed and demonstrated to address this issue.In this paper,a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented.Representative device demonstrations,including ultra-narrow linewidthⅢ-Ⅴ/Si lasers,fully integratedⅢ-Ⅴ/Si/Si3N4 lasers,high-channel count mode locked quantum dot(QD)lasers,and high gain QD amplifiers will be covered.
文摘A novel and fast model of erbium-doped fiber amplifiers (EDFAs) is presented. By calculating a typical EDFA, numerical results are compared with the results obtained by spectral-solved method. The results of comparison show that such a model can improve the computational speed and preserve the precision. Some characteristics of the EDFA are then analyzed using this model. The results are consistent with those of the experiments.
基金supported by National Natural Science Foundations of China (No.61971052 and No.U20A20203)Key Research and Development Project of Guangdong Province (2020B0101080001)
文摘In this paper,a 5G wideband power amplifier(PA)with bandpass filtering response is synthesized using a bandwidth-extended bandpass filter as the matching network(MN).In this structure,the bandwidth(θ_(C))is defined as a variable in the closedform equations provided by the microstrip bandpass filter.It can be extended over a wide range only by changing the characteristic impedances of the structure.Different from the other wideband MNs,the extension of bandwidth does not increase the complexity of the structure(order n is fixed).In addition,based on the bandwidth-extended structure,the wideband design of bandpass filtering PA is not limited to the fixed bandwidth of the specific filter structure.The theoretical analysis of the MN and the design flow of the PA are provided in this design.The fabricated bandpass filtering PA can support almost one-octave bandwidth(2-3.8 GHz),covering the two 5G bands(n41 and n78).The drain efficiency of 47%-60%and output power higher than 40 dBm are measured.Good frequency selectivity in S-parameter measurements can be observed.
基金Chinese Academy of Sciences,the National Natural Science Foundation of China under Grant Nos 10734080,60921004,60908008 and 61078037the National Basic Research Program of China under Grant No 2011CB808101International S&T Cooperation Program of China under Grant No 2011DFA11300.
文摘A scheme of double grating expanders is first proposed for high energy chirped pulse amplifiers.It is demonstrated that they can compensate for the amplifier's material dispersion up to the fourth-order,together with a suitable grating compressor.The scheme makes it possible that the pulse expansion in Chirped pulse amplifiers(CPAs)is no longer restricted by the material dispersion,and the corresponding grating compressor can be independently optimized according to the available gratings'size and damage threshold.
文摘In this letter, a novel model is proposed for modeling the nonlinearity and memory effects of power amplifiers. The classical Volterra model is modified through a function of the sum of nonlinearity order with sum of memory length. The parameters of this model can be extracted in digital domain since the model is analyzed based on the envelope signals. The model we proposed enables a substantial reduction in the number of coefficients involved, and with excellent accuracy.
文摘Quasi-PID control method that is able to effectively inhibit the inherent tracking error of PI control method is proposed on the basis of a rounded theoretical analysis of a model of switching power amplifiers (SPAs). To avoid the harmful impacts of the circuit parameter variations and the random disturbances on quasi-PID control method, a single neuron is introduced to endow it with self-adaptability. Quasi-PID control method and the single neuron combine with each other perfectly, and their formation is named as single-neuron adaptive quasi-PID control method. Simulation and experimental results show that single-neuron adaptive quasi-PID control method can accurately track both the predictable and the unpredictable waveforms. Quantitative analysis demonstrates that the accuracy of single-neuron adaptive quasi-PID control method is comparable to that of linear power amplifiers (LPAs) and so can fulfill the requirements of some high-accuracy applications, such as protective relay test. Such accuracy is very difficult to be achieved by many modern control methods for converter controls. Compared with other modern control methods, the programming realization of single-neuron adaptive quasi-PID control method is more suitable for real-time applications and realization on low-end microprocessors for its simple structure and lower computational complexity.
基金Supported by National Natural Science Foundation of China under Grant Nos.61379153,61579725
文摘The developing tendency of continuous-variable （CV） measurement-device-independent （MDI） quantum cryptography is to cope with the practical issue of implementing sealable quantum networks. Up to now, most theoretical and experimental researches on CV-MDI QKD are focused on two-party protocols. However, we suggest a CV-MDI multipartite quantum secret sharing （QSS） protocol use the EPR states coupled with optical amplifiers. More remarkable, QSS is the real application in multipartite CV-MDI QKD, in other words, is the concrete implementation method of multipartite CV-MDI QKD. It can implement a practical quantum network scheme, under which the legal participants create the secret correlations by using EPR states connecting to an untrusted relay via insecure links and applying the multi-entangled Greenberger-Horne-Zeilinger （GHZ） state analysis at relay station. Even if there is a possibility that the relay may be completely tampered, the legal participants are still able to extract a secret key from network communication. The numerical simulation indicates that the quantum network communication can be achieved in an asymmetric scenario, fulfilling the demands of a practical quantum network. Additionally, we illustrate that the use of optical amplifiers can compensate the partial inherent imperfections of detectors and increase the transmission distance of the CV-MDI quantum system.
文摘Based on the transfer matrix method, we present a new one-dimensional steady-state model of vertical-cavity semiconductor optical amplifiers （VCSOAs）, in which the longitudinal carrier concentration distribution in the active region and the discontinuity of the refractive index inside the cavity is taken into consideration. The model is theoretically proven to be a reliable one for describing the standing wave effect in a periodic gain structure. By using this model, some optical amplification characteristics of VCSOAs are investigated.
