High-precision analog-to-digital converters(ADCs)serve as fundamental components in modern electronic systems,bridging physical analog world and digital intelligence.They find ubiquitous applications across diverse do...High-precision analog-to-digital converters(ADCs)serve as fundamental components in modern electronic systems,bridging physical analog world and digital intelligence.They find ubiquitous applications across diverse domains,ranging from internet of things(IoT)to embodied artificial intelligence systems.Achieving high precision necessitates various circuit techniques including high-performance amplifiers and advanced calibration schemes.Furthermore,the evolution of ADC architectures has gradually elevated the significance of peripheral circuitry co-design in optimizing system-level performance metrics.In ISSCC 2025,several techniques are proposed to address these challenges.展开更多
This paper presents a 6 kb SRAM that uses a novel 10T cell to achieve a minimum operating voltage of 320 mV in a 130 nm CMOS process. A number of low power circuit techniques are included to enable the proposed SRAM t...This paper presents a 6 kb SRAM that uses a novel 10T cell to achieve a minimum operating voltage of 320 mV in a 130 nm CMOS process. A number of low power circuit techniques are included to enable the proposed SRAM to operate in the subthreshold region. The reverse short channel effect and the reverse narrow channel effect are utilized to improve the performance of the SRAM. A novel subthreshold pulse generation circuit produces an ideal pulse to make read operation stable. A floating write bit-line effectively reduces the standby leakage consumption. Finally, a short read bit-line makes the read operation fast and energy-saving. Measurements indicate that these techniques are effective, the SRAM can operate at 800 kHz and consume 1.94/zW at its lowest voltage （320 mV）.展开更多
文摘High-precision analog-to-digital converters(ADCs)serve as fundamental components in modern electronic systems,bridging physical analog world and digital intelligence.They find ubiquitous applications across diverse domains,ranging from internet of things(IoT)to embodied artificial intelligence systems.Achieving high precision necessitates various circuit techniques including high-performance amplifiers and advanced calibration schemes.Furthermore,the evolution of ADC architectures has gradually elevated the significance of peripheral circuitry co-design in optimizing system-level performance metrics.In ISSCC 2025,several techniques are proposed to address these challenges.
基金Project supported by the National Natural Science Foundation of China(No.61306039)the Next Generation of Information Technology for Sensing China(No.XDA06020401)
文摘This paper presents a 6 kb SRAM that uses a novel 10T cell to achieve a minimum operating voltage of 320 mV in a 130 nm CMOS process. A number of low power circuit techniques are included to enable the proposed SRAM to operate in the subthreshold region. The reverse short channel effect and the reverse narrow channel effect are utilized to improve the performance of the SRAM. A novel subthreshold pulse generation circuit produces an ideal pulse to make read operation stable. A floating write bit-line effectively reduces the standby leakage consumption. Finally, a short read bit-line makes the read operation fast and energy-saving. Measurements indicate that these techniques are effective, the SRAM can operate at 800 kHz and consume 1.94/zW at its lowest voltage （320 mV）.
