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Small-Signal Equivalent Circuit Modeling of a Photodetector Chip 被引量:1
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作者 苗昂 李轶群 +4 位作者 吴强 崔海林 黄永清 黄辉 任晓敏 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第12期1878-1882,共5页
A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector's RF performance i... A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector's RF performance into consideration,is first determined based on the device's physical structure. The photodetector's S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip's high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits. 展开更多
关键词 small-signal equivalent circuit model of photodetector parameter extraction high frequency meas-urement genetic algorithm
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Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation 被引量:1
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作者 Shi-Yu Feng Yong-Bo Su +4 位作者 Peng Ding Jing-Tao Zhou Song-Ang Peng Wu-Chang Ding Zhi Jin 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第4期638-646,共9页
With the widespread utilization of indium-phosphide-based high-electron-mobility transistors(InP HEMTs)in the millimeter-wave(mmW)band,the distributed and high-frequency parasitic coupling behavior of the device is pa... With the widespread utilization of indium-phosphide-based high-electron-mobility transistors(InP HEMTs)in the millimeter-wave(mmW)band,the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent.We present an InP HEMT extrinsic parasitic equivalent circuit,in which the conductance between the device electrodes and a new gate-drain mutual inductance term L_(mgd)are taken into account for the high-frequency magnetic field coupling between device electrodes.Based on the suggested parasitic equivalent circuit,through HFSS and advanced design system(ADS)co-simulation,the equivalent circuit parameters are directly extracted in the multi-step system.The HFSS simulation prediction,measurement data,and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent circuit.The proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted. 展开更多
关键词 extrinsic equivalent circuit modeling InP HEMT HFSS and ADS co-simulation S-PARAMETERS
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An equivalent circuit model for terahertz quantum cascade lasers:Modeling and experiments
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作者 姚辰 徐天鸿 +2 位作者 万文坚 朱永浩 曹俊诚 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第9期257-260,共4页
Terahertz quantum cascade lasers(THz QCLs) emitted at 4.4 THz are fabricated and characterized. An equivalent circuit model is established based on the five-level rate equations to describe their characteristics. In... Terahertz quantum cascade lasers(THz QCLs) emitted at 4.4 THz are fabricated and characterized. An equivalent circuit model is established based on the five-level rate equations to describe their characteristics. In order to illustrate the capability of the model, the steady and dynamic performances of the fabricated THz QCLs are simulated by the model.Compared to the sophisticated numerical methods, the presented model has advantages of fast calculation and good compatibility with circuit simulation for system-level designs and optimizations. The validity of the model is verified by the experimental and numerical results. 展开更多
关键词 TERAHERTZ quantum cascade laser equivalent circuit model five-level rate equations
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Parametric Modeling of Circuit Model for AC Glow Discharge in Air
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作者 Yu Bing Yuan Pei +1 位作者 Shen Enyu Shu Wenjun 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI CSCD 2018年第4期710-718,共9页
In the parametric modeling of the circuit model for glow discharge in air,a new method for the design of glow discharge circuit model is presented.The new circuit model is an important reference for the design of plas... In the parametric modeling of the circuit model for glow discharge in air,a new method for the design of glow discharge circuit model is presented.The new circuit model is an important reference for the design of plasma power supply,the simulation of glow discharge plasma actuator and the simulation of glow discharge plasma anemometer.The modeling approach consists in developing an electrical model of the glow discharge in air based on circuit components.The structure of the circuit model is established according to the theoretical analysis and the experimental device.Then the parameters of the circuit model are obtained based on the circuit analysis.Finally,the circuit model is verified by comparing the simulation current with the experimental current.This model takes into account the whole framework of the air glow discharge including the sheath and the plasma area.The built circuit model is feasible and reliable,thus being instructive for the investigation of the glow discharge in air. 展开更多
关键词 parametric modeling glow discharge circuit model ORCAD
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Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs 被引量:1
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作者 Can Li Cong-Wei Liao +3 位作者 Tian-Bao Yu Jian-Yuan Ke Sheng-Xiang Huang Lian-Wen Deng 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第2期93-96,共4页
An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors(a-IGZO TFTs)with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating mo... An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors(a-IGZO TFTs)with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges,which are controlled by gate voltage.It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance(C_(TI)/C_(BI)).Incorporating the proposed model with Verilog-A,a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations.Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure. 展开更多
关键词 TFT Concise modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated circuit Designs Zn
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Design and validation of RLC equivalent circuit model based on long-wave infrared metamaterial absorber
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作者 ZHAO Ji-Cong DANG Yan-Meng +3 位作者 HOU Hai-Yang LIN Ye-Fan SUN Hai-Yan ZHANG Kun 《红外与毫米波学报》 北大核心 2025年第1期129-137,共9页
In this paper,we propose an RLC equivalent circuit model theory which can accurately predict the spectral response and resonance characteristics of metamaterial absorption structures,extend its design,and characterize... In this paper,we propose an RLC equivalent circuit model theory which can accurately predict the spectral response and resonance characteristics of metamaterial absorption structures,extend its design,and characterize the parameters of the model in detail.By employing this model,we conducted computations to characterize the response wavelength and bandwidth of variously sized metamaterial absorbers.A comparative analysis with Finite Difference Time Domain(FDTD)simulations demonstrated a remarkable level of consistency in the results.The designed absorbers were fabricated using micro-nano fabrication processes,and were experimentally tested to demonstrate absorption rates exceeding 90%at a wavelength of 9.28μm.The predicted results are then compared with test results.The comparison reveals good consistency in two aspects of the resonance responses,thereby confirming the rationality and accuracy of this model. 展开更多
关键词 METAMATERIAL surface plasmons magnetic dipoles RLC circuit model
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An intelligent matching method for the equivalent circuit of electrochemical impedance spectroscopy based on Random Forest
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作者 Wenbo Chen Bingjun Yan +7 位作者 Aidong Xu Xin Mu Xiufang Zhou Maowei Jiang Changgang Wang Rui Li Jie Huang Junhua Dong 《Journal of Materials Science & Technology》 2025年第6期300-310,共11页
One of the core works of analyzing Electrochemical Impedance Spectroscopy(EIS)data is to select an appropriate equivalent circuit model to quantify the parameters of the electrochemical reaction process.However,this p... One of the core works of analyzing Electrochemical Impedance Spectroscopy(EIS)data is to select an appropriate equivalent circuit model to quantify the parameters of the electrochemical reaction process.However,this process often relies on human experience and judgment,which will introduce subjectivity and error.In this paper,an intelligent approach is proposed for matching EIS data to their equivalent circuits based on the Random Forest algorithm.It can automatically select the most suitable equivalent circuit model based on the characteristics and patterns of EIS data.Addressing the typical scenario of metal corrosion,an atmospheric corrosion EIS dataset of low-carbon steel is constructed in this paper,which includes five different corrosion scenarios.This dataset was used to validate and evaluate the pro-posed method in this paper.The contributions of this paper can be summarized in three aspects:(1)This paper proposes a method for selecting equivalent circuit models for EIS data based on the Random Forest algorithm.(2)Using authentic EIS data collected from metal atmospheric corrosion,the paper es-tablishes a dataset encompassing five categories of metal corrosion scenarios.(3)The superiority of the proposed method is validated through the utilization of the established authentic EIS dataset.The ex-periment results demonstrate that,in terms of equivalent circuit matching,this method surpasses other machine learning algorithms in both precision and robustness.Furthermore,it shows strong applicability in the analysis of EIS data. 展开更多
关键词 Electrochemical impedance spectroscopy Random forest CORROSION Equivalent circuit model
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Simulation of capacitively coupled Ar/O_(2)discharges based on global/equivalent circuit model and an extended reaction set
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作者 Yi Wang Wan Dong +2 位作者 Yi-Fan Zhang Liu-Qin Song Yuan-Hong Song 《Chinese Physics B》 2025年第8期623-635,共13页
Radio frequency capacitively coupled plasmas(RF CCPs)operated in Ar/O_(2)gas mixtures which are widely adopted in microelectronics,display,and photovoltaic industry,are investigated based on an equivalent circuit mode... Radio frequency capacitively coupled plasmas(RF CCPs)operated in Ar/O_(2)gas mixtures which are widely adopted in microelectronics,display,and photovoltaic industry,are investigated based on an equivalent circuit model coupled with a global model.This study focuses on the effects of singlet metastable molecule O_(2)(b^(1)∑_(8)^(+)),highly excited Herzberg states O_(2)(A^(3)∑_(u)^(+),A^(3)△_(u),c^(1)∑_(u)^(-)),and the negative ion O_(2)^(-),which are usually neglected in simulation studies.Specifically,their impact on particle densities,electronegativity,electron temperature,voltage drop across the sheath,and absorbed power in the discharge is analyzed.The results indicate that O_(2)(b^(1)∑_(8)^(+))and O_(2)^(-)exhibit relatively high densities in argon-oxygen discharges.While O_(2)(A^(3)∑_(u)^(+),A^(3)△_(u),c^(1)∑_(u)^(-))play a critical role in O_(2)b1S+g production,especially at higher pressure.The inclusion of these particles reduces the electronegativity,electron temperature,and key species densities,especially the O^(-)and O^(*)densities.Moreover,the sheath voltage drop,as well as the inductance and resistance of the plasma bulk are enhanced,while the sheath dissipation power and total absorbed power decrease slightly.With the increasing pressure,the influence of these particles on the discharge properties becomes more significant.The study also explores the generation and loss of main neutral species and charged particles within the pressure range of 20 mTorr-100 mTorr(1 Torr=1.33322×10^(2)Pa),offering insights into essential and non-essential reactions for future low-pressure O_(2)and Ar/O_(2)CCP discharge modeling. 展开更多
关键词 Ar/O_(2)CCP discharges reaction set equivalent circuit model global model
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Small Signal Equivalent Circuit Model and Modulation Properties of Vertical Cavity-Surface Emitting Lasers
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作者 毛陆虹 陈弘达 +5 位作者 梁琨 唐君 吴荣汉 粘华 郭维廉 吴霞宛 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第1期82-86,共5页
Small signal equivalent circuit model and modulation properties of vertical cavity surface emitting lasers(VCSEL's) are presented.The modulation properties both in analytic equation calculation and in circuit mo... Small signal equivalent circuit model and modulation properties of vertical cavity surface emitting lasers(VCSEL's) are presented.The modulation properties both in analytic equation calculation and in circuit model simulation are studied.The analytic equation calculation of the modulation properties is calculated by using Mathcad program and the circuit model simulation is simulated by using Pspice program respectively.The results of calculation and the simulation are in good agreement with each other.Experiment is performed to testify the circuit model. 展开更多
关键词 VCSEL circuit model modulation property
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Designing Chaotic Mathematical Circuits for Solving Practical Problems
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作者 Ren Lozi 《International Journal of Automation and computing》 EI CSCD 2014年第6期588-597,共10页
We introduce the paradigm of chaotic mathematical circuitry which shows some similarity to the paradigm of electronic circuitry, especially in the frame of chaotic attractors for solving practical problems(generating ... We introduce the paradigm of chaotic mathematical circuitry which shows some similarity to the paradigm of electronic circuitry, especially in the frame of chaotic attractors for solving practical problems(generating hyperchaos; developing chaos based pseudo random number generator(CPRNG) and chaotic multistream PRNG; secure communication via synchronization). They can also be used in cryptography, generic algorithms in optimization, control, etc. 展开更多
关键词 Chaotic mathematical circuit circuit modeling CHAOS Chua’s circuit pseudo-random number generator
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Modeling and Simulations in Symmetrical Supercapacitors Using Time Domain Mathematical Expressions
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作者 Antonio Paulo Rodrigues Fernandez Elio Alberto Périgo Rubens Nunes de Faria Júnior 《Journal of Applied Mathematics and Physics》 2022年第10期3083-3100,共18页
This study presents the deduction of time domain mathematical equations to simulate the curve of the charging process of a symmetrical electrochemical supercapacitor with activated carbon electrodes fed by a source of... This study presents the deduction of time domain mathematical equations to simulate the curve of the charging process of a symmetrical electrochemical supercapacitor with activated carbon electrodes fed by a source of constant electric potential in time ε and the curve of the discharge process through two fixed resistors. The first resistor R<sub>Co</sub> is a control that aims to prevent sudden variations in the intensity of the electric current i<sub>1</sub>(t) present at the terminals of the electrochemical supercapacitor at the beginning of the charging process. The second resistor is the internal resistance R<sub>A</sub> of the ammeter used in the calculation of the intensity of the electric current i<sub>1</sub>(t) over time in the charging and discharging processes. The mathematical equations generated were based on a 2R(C + kU<sub>C</sub>(t)) electrical circuit model and allowed to simulate the effects of the potential-dependent capacitance (kU<sub>C</sub>(t)) on the charge and discharge curves and hence on the calculated values of the fixed capacitance C, the equivalent series resistance (ESR), the equivalent parallel resistance (EPR) and the electrical potential dependent capacitance index k. 展开更多
关键词 Symmetrical Supercapacitors Electrical circuit modeling Potential Dependent Capacitance Simulation of Charge and Discharge Curves Time Domain Mathematical Equations
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Evaluation of the Capacitance and Charge Distribution for Conducting Bodies by Circuit Modelling
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作者 Dhamodaran Muneeswaran Dhanasekaran Raghavan 《Circuits and Systems》 2016年第4期280-291,共12页
This paper presents a numerical analysis for computation of free space capacitance of different arbitrarily shaped conducting bodies based on the finite element method with triangular subsection modeling. Evaluation o... This paper presents a numerical analysis for computation of free space capacitance of different arbitrarily shaped conducting bodies based on the finite element method with triangular subsection modeling. Evaluation of capacitance of different arbitrary shapes is important for the electrostatic analysis. Capacitance computation is an important step in the prediction of electrostatic discharge which causes electromagnetic interference. We specifically illustrated capacitance computation of electrostatic models like unit cube, rectangular plate, triangular plate, T-shaped plate, sphere and two touching spheres. Numerical data on the capacitance of conducting objects are presented. The results are compared with other available results in the literature. We used the COMSOL Multiphysics software for the simulation. The models are designed in three-dimensional form using electrostatic environment and can be applied to any spacecraft circuit modeling design. The findings of this study show that the finite element method is a more accurate method and can be applied to any circuit modeling design. 展开更多
关键词 CAPACITANCE Spacecraft circuit modeling Electrostatic Analysis Electrostatic Discharge Finite Element Method
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Transfer function modeling and analysis of the open-loop Buck converter using the fractional calculus 被引量:11
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作者 王发强 马西奎 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第3期232-239,共8页
Based on the fact that the real inductor and the real capacitor are fractional order in nature and the fractional calculus,the transfer function modeling and analysis of the open-loop Buck converter in a continuous co... Based on the fact that the real inductor and the real capacitor are fractional order in nature and the fractional calculus,the transfer function modeling and analysis of the open-loop Buck converter in a continuous conduction mode(CCM) operation are carried out in this paper.The fractional order small signal model and the corresponding equivalent circuit of the open-loop Buck converter in a CCM operation are presented.The transfer functions from the input voltage to the output voltage,from the input voltage to the inductor current,from the duty cycle to the output voltage,from the duty cycle to the inductor current,and the output impedance of the open-loop Buck converter in CCM operation are derived,and their bode diagrams and step responses are calculated,respectively.It is found that all the derived fractional order transfer functions of the system are influenced by the fractional orders of the inductor and the capacitor.Finally,the realization of the fractional order inductor and the fractional order capacitor is designed,and the corresponding PSIM circuit simulation results of the open-loop Buck converter in CCM operation are given to confirm the correctness of the derivations and the theoretical analysis. 展开更多
关键词 Buck converter small signal equivalent circuit model fractional calculus transfer function
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Simulation of second-order RC equivalent circuit model of lithium battery based on variable resistance and capacitance 被引量:11
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作者 JI Yan-ju QIU Shi-lin LI Gang 《Journal of Central South University》 SCIE EI CAS CSCD 2020年第9期2606-2613,共8页
With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in ... With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in this paper.The ampere-hour(Ah)integration method based on external characteristics is analyzed,and the open-circuit voltage(OCV)method is studied.The two methods are combined to estimate SOC.Considering the accuracy and complexity of the model,the second-order RC equivalent circuit model of lithium battery is selected.Pulse discharge and exponential fitting of lithium battery are used to obtain corresponding parameters.The simulation is carried out by using fixed resistance capacitance and variable resistance capacitor respectively.The accuracy of variable resistance and capacitance model is 2.9%,which verifies the validity of the proposed model. 展开更多
关键词 lithium battery equivalent circuit model parameter identification SOC estimation
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A Comparative Study on Open Circuit Voltage Models for Lithium-ion Batteries 被引量:10
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作者 Quan-Qing Yu Rui Xiong +1 位作者 Le-Yi Wang Cheng Lin 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2018年第4期84-91,共8页
The current research of state of charge(SoC) online estimation of lithium-ion battery(LiB) in electric vehicles(EVs)mainly focuses on adopting or improving of battery models and estimation filters. However, little att... The current research of state of charge(SoC) online estimation of lithium-ion battery(LiB) in electric vehicles(EVs)mainly focuses on adopting or improving of battery models and estimation filters. However, little attention has been paid to the accuracy of various open circuit voltage(OCV) models for correcting the SoC with aid of the ampere-hour counting method. This paper presents a comprehensive comparison study on eighteen OCV models which cover the majority of models used in literature. The low-current OCV tests are conducted on the typical commercial LiFePO/graphite(LFP) and LiNiMnCoO/graphite(NMC) cells to obtain the experimental OCV-SoC curves at different ambient temperature and aging stages. With selected OCV and SoC points from experimental OCV-SoC curves, the parameters of each OCV model are determined by curve fitting toolbox of MATLAB 2013. Then the fitting OCV-SoC curves based on diversified OCV models are also obtained. The indicator of root-mean-square error(RMSE) between the experimental data and fitted data is selected to evaluate the adaptabilities of these OCV models for their main features, advantages,and limitations. The sensitivities of OCV models to ambient temperatures, aging stages, numbers of data points,and SoC regions are studied for both NMC and LFP cells. Furthermore, the influences of these models on SoC estimation are discussed. Through a comprehensive comparison and analysis on OCV models, some recommendations in selecting OCV models for both NMC and LFP cells are given. 展开更多
关键词 State of charge Open circuit voltage model Lithium-ion battery NMC LFP
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Modeling and Parameter Extraction of VDMOSFET
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作者 赖柯吉 张莉 田立林 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第3期251-256,共6页
A sub circuit model for VDMOS is built according to its physical structure.Parameters and formulas describing the device are also derived from this model.Comparing to former results,this model avoids too many technic... A sub circuit model for VDMOS is built according to its physical structure.Parameters and formulas describing the device are also derived from this model.Comparing to former results,this model avoids too many technical parameters and simplify the sub circuit efficiently.As a result of numeric computation,this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response (DC error within 5%,AC error within 10%).Such a model is now available for circuit simulation and parameter extraction. 展开更多
关键词 vertical double diffused MOSFET parameter extraction sub circuit model JFET effect
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Investigation of the compact torus plasma motion in the KTX-CTI device based on circuit analyses 被引量:2
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作者 Qilong DONG Defeng KONG +19 位作者 Xiaohe WU Yang YE Kun YANG Tao LAN Chen CHEN Jie WU Sen ZHANG Wenzhe MAO Zhihao ZHAO Fanwei MENG Xiaohui ZHANG Yanqing HUANG Wei BAI Dezheng YANG Fei WEN Pengfei ZI Lei LI Guanghai HU Shoubiao ZHANG Ge ZHUANG 《Plasma Science and Technology》 SCIE EI CAS CSCD 2022年第2期36-44,共9页
Compact torus(CT)injection is one of the most promising methods for the central fuelling of next-generation reactor-grade fusion devices due to its high density,high velocity,and selfcontained magnetised structure.A n... Compact torus(CT)injection is one of the most promising methods for the central fuelling of next-generation reactor-grade fusion devices due to its high density,high velocity,and selfcontained magnetised structure.A newly compact torus injector(CTI)device in Keda Torus e Xperiment(KTX),named KTX-CTI,was successfully developed and tested at the University of Science and Technology in China.In this study,first,we briefly introduce the basic principles and structure of KTX-CTI,and then,present an accurate circuit model that relies on nonlinear regression analysis(NRA)for studying the current waveform of the formation region.The current waveform,displacement,and velocity of CT plasma in the acceleration region are calculated using this NRA-based one-dimensional point model.The model results were in good agreement with the experiments.The next-step upgrading reference scheme of the KTX-CTI device is preliminarily investigated using this NRA-based point model.This research can provide insights for the development of experiments and future upgrades of the device. 展开更多
关键词 compact torus(CT) circuit modelling nonlinear regression analysis(NRA) point model
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Modeling of Amperometric Immunosensor for CMOS Integration 被引量:1
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作者 Ce Li Haigang Yang +1 位作者 Shanhong Xia Chao Bian 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2006年第A03期439-442,共4页
A circuit model of the Amperometric immunosensor for use in the biosensor system-on-chip simulation is proposed in this paper.The model parameters are extracted with several methods and verified by MATLAB and SPICE si... A circuit model of the Amperometric immunosensor for use in the biosensor system-on-chip simulation is proposed in this paper.The model parameters are extracted with several methods and verified by MATLAB and SPICE simulation.A CMOS potentiostat circuit required for conditioning the Amperometric immunosensor is also included in the circuit model.The mean square error norm of the simulated curve against the measured one is 8.65×10^(-17) The whole circuit has been fabricated in a 0.35μm CMOS process. 展开更多
关键词 AMPEROMETRIC MICROELECTRODE circuit model POTENTIOSTAT FOLDED-CASCODE
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Modeling and optimization of the multichannel spark discharge 被引量:1
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作者 张志波 吴云 +3 位作者 贾敏 宋慧敏 孙正中 李应红 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第6期244-253,共10页
This paper reports a novel analytic model of this multichannel spark discharge, considering the delay time in the breakdown process, the electric transforming of the discharge channel from a capacitor to a resistor in... This paper reports a novel analytic model of this multichannel spark discharge, considering the delay time in the breakdown process, the electric transforming of the discharge channel from a capacitor to a resistor induced by the air breakdown, and the varying plasma resistance in the discharge process. The good agreement between the experimental and the simulated results validated the accuracy of this model. Based on this model, the influence of the circuit parameters on the maximum discharge channel number(MDCN) is investigated. Both the input voltage amplitude and the breakdown voltage threshold of each discharge channel play a critical role. With the increase of the input voltage and the decrease of the breakdown voltage, the MCDN increases almost linearly. With the increase of the discharge capacitance, the MDCN first rises and then remains almost constant. With the increase of the circuit inductance, the MDCN increases slowly but decreases quickly when the inductance increases over a certain value. There is an optimal value of the capacitor connected to the discharge channel corresponding to the MDCN. Finally, based on these results, to shorten the discharge time, a modified multichannel discharge circuit is developed and validated by the experiment. With only 6-kV input voltage, 31-channels discharge is achieved. The breakdown voltage of each electrode gap is larger than 3 kV. The modified discharge circuit is certain to be widely used in the PSJA flow control field. 展开更多
关键词 multichannel discharge circuit circuit model PSJA array plasma flow control
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Small Signal Circuit Model of Double Photodiodes 被引量:1
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作者 HANJian,zhong NiGuo-qiang MAOLu-hong 《Semiconductor Photonics and Technology》 CAS 2004年第3期164-167,173,共5页
The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission d... The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is given.From analysis on the frequency domain of the circuit model the device has two poles.One has the relationship with junction capacitance and the DPD’s load,the other with the depth and the doping concentration of the N-well in the DPD.Different depth of the N-well and different area of the DPDs with bandwidth were compared.The analysis results are important to design the high speed DPDs. 展开更多
关键词 PHOTODETECTOR circuit model Device simulation
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