The capacitively coupled radio frequency（CCRF）plasma has been widely used in various fields.In some cases,it requires us to estimate the range of key plasma parameters simpler and quicker in order to understand the ...The capacitively coupled radio frequency（CCRF）plasma has been widely used in various fields.In some cases,it requires us to estimate the range of key plasma parameters simpler and quicker in order to understand the behavior in plasma.In this paper,a glass vacuum chamber and a pair of plate electrodes were designed and fabricated,using 13.56 MHz radio frequency（RF）discharge technology to ionize the working gas of Ar.This discharge was mathematically described with equivalent circuit model.The discharge voltage and current of the plasma were measured atdifferent pressures and different powers.Based on the capacitively coupled homogeneous discharge model,the equivalent circuit and the analytical formula were established.The plasma density and temperature were calculated by using the equivalent impedance principle and energy balance equation.The experimental results show that when RF discharge power is 50–300 W and pressure is 25–250 Pa,the average electron temperature is about 1.7–2.1 e V and the average electron density is about 0.5？×10^17–3.6？×10^17m^-3.Agreement was found when the results were compared to those given by optical emission spectroscopy and COMSOL simulation.展开更多
A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was ...A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgsand drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore,the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.展开更多
基金supported by National Natural Science Foundation of China(Grant No.61378037)the Fundamental Research Funds for the Central Universities(Nos.2013B33614,2017B15214)+1 种基金the Research Funds of Innovation and Entrepreneurship Education Reform for Chinese Universities(No.16CCJG01Z004)the Changzhou Science and Technology Program(No.CJ20160027)
文摘The capacitively coupled radio frequency（CCRF）plasma has been widely used in various fields.In some cases,it requires us to estimate the range of key plasma parameters simpler and quicker in order to understand the behavior in plasma.In this paper,a glass vacuum chamber and a pair of plate electrodes were designed and fabricated,using 13.56 MHz radio frequency（RF）discharge technology to ionize the working gas of Ar.This discharge was mathematically described with equivalent circuit model.The discharge voltage and current of the plasma were measured atdifferent pressures and different powers.Based on the capacitively coupled homogeneous discharge model,the equivalent circuit and the analytical formula were established.The plasma density and temperature were calculated by using the equivalent impedance principle and energy balance equation.The experimental results show that when RF discharge power is 50–300 W and pressure is 25–250 Pa,the average electron temperature is about 1.7–2.1 e V and the average electron density is about 0.5？×10^17–3.6？×10^17m^-3.Agreement was found when the results were compared to those given by optical emission spectroscopy and COMSOL simulation.
基金The National Natural Science Foundation of China(No.61604038)China Postdoctoral Science Foundation(No.2015M580376)+1 种基金the Natural Science Foundation of Jiangsu Province(No.BK20160691)Jiangsu Postdoctoral Science Foundation(No.1501010A)
文摘A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgsand drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore,the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.
