In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector u...In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector unit. One of the transceiving chips emits light at the wavelength of 848.1 nm with a threshold current of 0.8 mA and a slope efficiency of 0.81 W/A. It receives light between 801 and 814 nm with a quantum efficiency of higher than 70%. On its counterpart, the other one of the transceiving chips emits light at the wavelength of 805.3 nm with a threshold current of 1.1 mA and a slope efficiency of 0.86 W/A. It receives light between 838 and 855 nm with a quantum efficiency of higher than 70%. The proposed pair of integrated optoelectronic transceiving chips can work full-duplex with each other, and they can be applied to single fiber bidirectional optical interconnects.展开更多
Optical interconnects based on photonic integrated circuits(PICs)are emerging as a pivotal technology to address the relentless surge in data traffic driven by compute-intensive applications.Combining mode-division mu...Optical interconnects based on photonic integrated circuits(PICs)are emerging as a pivotal technology to address the relentless surge in data traffic driven by compute-intensive applications.Combining mode-division multiplexing(MDM)with wavelength-division multiplexing(WDM)offers a compelling approach to significantly enhance the shoreline density of optical interconnects.However,existing on-chip MDM systems encounter considerable challenges in simultaneously achieving a large optical bandwidth,multi-band operation,and ultra-compactness,thereby limiting scalability as conventional telecom band resources become increasingly constrained.Here we introduce,to our knowledge,the first inverse-designed multi-band mode multiplexer(MUX)utilizing a digital metamaterial structure to support the first three-order TE modes.The proposed device features an ultra-compact footprint of 6μm×4.8μm and exhibits an exceptionally flat spectral response,with numerical simulations confirming spectral variations of less than 0.94 dB across the 1500–2100 nm range.Experimental results further validate its performance,demonstrating insertion losses below 4.3 dB and 4.0 dB,and crosstalk below−11.6 dB and−11.3 dB,within the 1525–1585 nm and 1940–2040 nm bands,respectively.Additionally,system-level optical interconnect experiments using a multi-band MDM circuit successfully achieve single-wavelength transmission rates of 3-modes×180 Gb∕s at the 1.55μm band and record-setting 3-modes×114 Gb∕s in the 2μm band.This work highlights the transformative potential of employing multi-band MDM technology to enhance bandwidth density and scalability,providing a robust foundation for next-generation high-capacity on-chip optical interconnects.展开更多
基金supported by the Fund of State Key Laboratory of Information Photonics and Optical Communications(No.IPOC2016ZT10)the National Natural Science Foundation of China(Nos.61574019,61674020,and 61674018)+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20130005130001)the 111 Project(No.B07005)
文摘In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector unit. One of the transceiving chips emits light at the wavelength of 848.1 nm with a threshold current of 0.8 mA and a slope efficiency of 0.81 W/A. It receives light between 801 and 814 nm with a quantum efficiency of higher than 70%. On its counterpart, the other one of the transceiving chips emits light at the wavelength of 805.3 nm with a threshold current of 1.1 mA and a slope efficiency of 0.86 W/A. It receives light between 838 and 855 nm with a quantum efficiency of higher than 70%. The proposed pair of integrated optoelectronic transceiving chips can work full-duplex with each other, and they can be applied to single fiber bidirectional optical interconnects.
基金National Key Research and Development Program of China(2023YFB2905700)National Natural Science Foundation of China(62235005,61925104,62171137).
文摘Optical interconnects based on photonic integrated circuits(PICs)are emerging as a pivotal technology to address the relentless surge in data traffic driven by compute-intensive applications.Combining mode-division multiplexing(MDM)with wavelength-division multiplexing(WDM)offers a compelling approach to significantly enhance the shoreline density of optical interconnects.However,existing on-chip MDM systems encounter considerable challenges in simultaneously achieving a large optical bandwidth,multi-band operation,and ultra-compactness,thereby limiting scalability as conventional telecom band resources become increasingly constrained.Here we introduce,to our knowledge,the first inverse-designed multi-band mode multiplexer(MUX)utilizing a digital metamaterial structure to support the first three-order TE modes.The proposed device features an ultra-compact footprint of 6μm×4.8μm and exhibits an exceptionally flat spectral response,with numerical simulations confirming spectral variations of less than 0.94 dB across the 1500–2100 nm range.Experimental results further validate its performance,demonstrating insertion losses below 4.3 dB and 4.0 dB,and crosstalk below−11.6 dB and−11.3 dB,within the 1525–1585 nm and 1940–2040 nm bands,respectively.Additionally,system-level optical interconnect experiments using a multi-band MDM circuit successfully achieve single-wavelength transmission rates of 3-modes×180 Gb∕s at the 1.55μm band and record-setting 3-modes×114 Gb∕s in the 2μm band.This work highlights the transformative potential of employing multi-band MDM technology to enhance bandwidth density and scalability,providing a robust foundation for next-generation high-capacity on-chip optical interconnects.
