In this study,a compact 16-channel integrated charge-sensitive preamplifier named the smart preamplifier(SPA)was developed to support the large-scale detector array used in modern nuclear physics experiments.Two types...In this study,a compact 16-channel integrated charge-sensitive preamplifier named the smart preamplifier(SPA)was developed to support the large-scale detector array used in modern nuclear physics experiments.Two types of SPA,namely SPA02 and SPA03(with external field effect transistor),have been manufactured to match silicon detectors with small and large capacitances,respectively.The characteristics of the SPA include fast response of typically less than 6 ns for pulse rising time and low equivalent noise of 1.5 keV at zero input capacitance.The energy sensitivity and pulse decay time can be easily adjusted by changing the feedback capacitance Cfand resistance Rfin various applications.A good energy resolution of 24.4 keV for 5.803-MeV alpha particles from 244 Cm was achieved using a small-sized Si-PIN detector;for the silicon strip detectors in the test with the alpha source,a typical energy resolution of 0.6–0.8%was achieved.The integrated SPA has been employed in several experiments of silicon strip detectors with hundreds of channels,and a good performance has been realized.展开更多
Among the various micro-pattern gas detectors (MPGD) that are available, the gas electron multiplier (GEM) detector is an attractive gas detector that has been used in particle physics experiments. However, the GEM de...Among the various micro-pattern gas detectors (MPGD) that are available, the gas electron multiplier (GEM) detector is an attractive gas detector that has been used in particle physics experiments. However, the GEM detector usually needs thousands of preamplifier units for its large number of micro-pattern readout strips or pads, which leads to considerable difficulties and complexities for front end electronics (FEE). Nowadays, by making use of complementary metal-oxide semiconductor (CMOS)-based application specific integrated circuit (ASIC), it is fea- sible to integrate hundreds of preamplifier units and other signal process circuits in a small-sized chip, which can be bound to the readout strips or pads of a micro-pattern particle detector (MPPD). Therefore, CMOS ASIC may provide an ideal solution to the readout problem of MPPD. In this article, a triple GEM detector is constructed and one of its readout strips is connected to a CMOS charge-sensitive preamplifier chip. The chip was exposed to an 55Fe source of 5.9 keV X-ray, and the amplitude spectrum of the chip was tested, and it was found that the energy resolution was approximately 27%, which indicates that the chip can be used in triple GEM detectors.展开更多
Using a scanning electron microscope (SEM) in the back-scattered electron (BSE) mode the composition of multi-element specimens may be determined based on the strong dependence of emission coefficient η on the averag...Using a scanning electron microscope (SEM) in the back-scattered electron (BSE) mode the composition of multi-element specimens may be determined based on the strong dependence of emission coefficient η on the average atomic number of elements Z. The output video signal of the usual BSE detectors is produced from their sensors, and the larger proportion of high-energy electrons with modified spectrum is added. Since η = is/ip (is and ip currents of specimen and probe), better accuracy must be achieved by direct measurements those currents on the specimen surface. Here, an experimental model of a current detector for a presented specimen is described. The cage is mounted on the carousel of the moving specimen stage. The input of the preamplifier is connected to the specimen holder in the form of a disk, the diameter of which is 12 mm. When the probe along its surface scanned, the input potential begins to pulsate with a negative polarity. The output of this preamplifier is connected to a small light-emitting diode, which creates intensity-modulated radiation in the chamber. Thus created the light video signal will be picked up by the photomultiplier of the E-T detector. The modes of true SE and BSE are set by applying tens bias volts of various polarities to the specimens or the cage itself.展开更多
A monolithic integrated CMOS preamplifier is presented for neural recording applications. Two AC-coupied capacitors are used to eliminate the large and random DC offsets existing in the electrode-electrolyte interface...A monolithic integrated CMOS preamplifier is presented for neural recording applications. Two AC-coupied capacitors are used to eliminate the large and random DC offsets existing in the electrode-electrolyte interface. Diode-connected nMOS transistors with a negative voltage between the gate and source are candidates for the large resistors necessary for the preamplifier. A novel analysis is given to determine the noise power spectral density. Simulation results show that the two-stage CMOS preamplifier in a closed-loop capacitive feedback configuration provides an AC in-band gain of 38.8dB,a DC gain of 0,and an input-referred noise of 277nVmax, integrated from 0. 1Hz to 1kHz. The preamplifier can eliminate the DC offset voltage and has low input-referred noise by novel circuit configuration and theoretical analysis.展开更多
A high gain cascade connected preamplifier for optical receivers is developed with 0.5μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3dB ban...A high gain cascade connected preamplifier for optical receivers is developed with 0.5μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3dB bandwidth of 10GHz, with a small signal gain of around 9dB. The post-stage distributed amplifier （DA） has a -3dB bandwidth of close to 20GHz,with a small signal gain of around 12dB. As a whole,the cascade preamplifier has a measured small signal gain of 21.3dB and a transimpedance of 55.3dBΩ in a 50Ω system. With a higher signal-to-noise ratio than that of the TIA and a markedly improved waveform distortion compared with that of the DA, the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence is clear and symmetric.展开更多
A single power supply common-gate （CG） current mode transimpedance preamplifier （TIA） is developed with a 0.5μm GaAs PHEMT process. The amplifier has a measured - 3dB bandwidth of 7. 5GHz and a transimpedance gai...A single power supply common-gate （CG） current mode transimpedance preamplifier （TIA） is developed with a 0.5μm GaAs PHEMT process. The amplifier has a measured - 3dB bandwidth of 7. 5GHz and a transimpedance gain of 45dBΩ. Both the input and output voltage standing wave ratios （VSWR） are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22pA/√Hz, with an average value of 17. 2pA/√Hz. Having a timing jitter of 14ps and eye amplitude of about 138mV,the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence （PRBS） is clear and satisfactory.展开更多
A 10 Gbit/s burst-mode preamplifier is designed for passive optical networks （PONs）. To achieve a high dynamic range and fast response, the circuit is DC coupled, and a feed-back type peak detector is designed to pe...A 10 Gbit/s burst-mode preamplifier is designed for passive optical networks （PONs）. To achieve a high dynamic range and fast response, the circuit is DC coupled, and a feed-back type peak detector is designed to perform auto-gaincontrol and threshold extraction. Regulated cascade （RGC） architecture is exploited as the input stage to reduce the input impedance of the circuit and isolate the large parasitic capacitance including the photodiode capacitance from the determination pole, thus increasing the bandwidth. This preamplifier is implemented using the low-cost 0. 13 ixm CMOS technology. The die area is 425 μm × 475 μm and the total power dissipation is 23.4 mW. The test results indicate that the preamplifier can work at a speed from 1.25 to 10.312 5 Gbit/s, providing a high transimpedance gain of 64.0 dBΩ and a low gain of 54. 6 dBl2 with a dynamic input range of over 22.9 dB. The equivalent input noise current is 23. 4 pA/ Hz1/2. The proposed burst amplifier satisfies related specifications defined in 10G-EPON and XG-PON standards.展开更多
The service provided by the GC(Gamma Cameras)in the Nuclear Medicine departments fails because of their breakdown,generally due to the associated electronics and not to the physical detection components.For this reaso...The service provided by the GC(Gamma Cameras)in the Nuclear Medicine departments fails because of their breakdown,generally due to the associated electronics and not to the physical detection components.For this reason,it was decided to develop an electronic system that allows the recovery and optimization of disused GC,starting with the design of the preamplifier for a PMT(photomultiplier tube).The circuit was designed and simulated and the list of components necessary for the construction of the preamplifier was generated,as well as the printed circuit board was designed for its assembly.By simulating the preamplifier this worked in linear mode.This determines that the amplitude of the output signal is proportional to the amount of charge delivered by the detector.This card allows an automatic adjustment of the signals of the PMT as do the modern GC.展开更多
In this paper,to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors,the CMOS FET is implemented as a feedback capacitor Cfp,so that the entire system should be built only w...In this paper,to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors,the CMOS FET is implemented as a feedback capacitor Cfp,so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit,the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns,the output resistance less than 94 ? and the linearity almost good.展开更多
In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire syste...In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94? and the linearity almost good.展开更多
We demonstrate a novel picosecond optical parametric preamplification to generate high-stability, high-energy and high-contrast seed pulses. The 5ps seed pulse is amplified from 60pJ to 300μJ with an 8.6ps/ 3mJ pump ...We demonstrate a novel picosecond optical parametric preamplification to generate high-stability, high-energy and high-contrast seed pulses. The 5ps seed pulse is amplified from 60pJ to 300μJ with an 8.6ps/ 3mJ pump laser in a signal stage of short pulse non-collinear optical parametric chirped pulse amplification. The total gain is more than 106 and the rms energy stability is under 1.35%. The contrast ratio is higher than 10s within a scale of 20ps before the main pulse. Consequently, the improvement factor of the signal contrast is approximately equal to the gain 106 outside the pump window.展开更多
A time-of-flight (TOF) detector has been used in the BESIII experiment to provide charged particle identification. In this paper, we present a novel high performance differential amplifier, which has been designed for...A time-of-flight (TOF) detector has been used in the BESIII experiment to provide charged particle identification. In this paper, we present a novel high performance differential amplifier, which has been designed for amplifying the signals from the detectors. The preamplifier can amplify differential signals, which can help to eliminate the common mode pickup, and increase the signal-to-noise ratio (SNR). Bilinear gain is one of the features of this preamplifier, which greatly increases the dynamic range and avoids the dead time of the preamplifier. In order to describe the bilinear gain, a 4-parameter function is developed. And this 4-parameter function can also be used in the calibration of the time walk caused by the amplitude due to the bilinear gain. The preamplifier has a gain about 10V/V with a small signal and about 1.0V/V with a large signal. The rise time of the preamp is less than 2 ns.展开更多
Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscop...Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873 K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073 K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.展开更多
Position-sensitive micro-channel plate (MCP) detectors are frequently used for the detection of particles like electrons and ions in atomic collision processes[1??3]. In this report, we present a one-dimensional posit...Position-sensitive micro-channel plate (MCP) detectors are frequently used for the detection of particles like electrons and ions in atomic collision processes[1??3]. In this report, we present a one-dimensional position-sensitive MCP detector based on a novel parallel-strip resistance anode and a pair of integrated charge sensitive spectroscopy amplifiers.展开更多
基金supported by the National Key R&D Program of China(No.2018YFA0404404)the National Natural Science Foundation of China(Nos.11635015,U1732145,11705285,11805280,U1867212,and 11961131012)the Continuous Basic Scientific Research Project(No.WDJC-2019-13).
文摘In this study,a compact 16-channel integrated charge-sensitive preamplifier named the smart preamplifier(SPA)was developed to support the large-scale detector array used in modern nuclear physics experiments.Two types of SPA,namely SPA02 and SPA03(with external field effect transistor),have been manufactured to match silicon detectors with small and large capacitances,respectively.The characteristics of the SPA include fast response of typically less than 6 ns for pulse rising time and low equivalent noise of 1.5 keV at zero input capacitance.The energy sensitivity and pulse decay time can be easily adjusted by changing the feedback capacitance Cfand resistance Rfin various applications.A good energy resolution of 24.4 keV for 5.803-MeV alpha particles from 244 Cm was achieved using a small-sized Si-PIN detector;for the silicon strip detectors in the test with the alpha source,a typical energy resolution of 0.6–0.8%was achieved.The integrated SPA has been employed in several experiments of silicon strip detectors with hundreds of channels,and a good performance has been realized.
文摘Among the various micro-pattern gas detectors (MPGD) that are available, the gas electron multiplier (GEM) detector is an attractive gas detector that has been used in particle physics experiments. However, the GEM detector usually needs thousands of preamplifier units for its large number of micro-pattern readout strips or pads, which leads to considerable difficulties and complexities for front end electronics (FEE). Nowadays, by making use of complementary metal-oxide semiconductor (CMOS)-based application specific integrated circuit (ASIC), it is fea- sible to integrate hundreds of preamplifier units and other signal process circuits in a small-sized chip, which can be bound to the readout strips or pads of a micro-pattern particle detector (MPPD). Therefore, CMOS ASIC may provide an ideal solution to the readout problem of MPPD. In this article, a triple GEM detector is constructed and one of its readout strips is connected to a CMOS charge-sensitive preamplifier chip. The chip was exposed to an 55Fe source of 5.9 keV X-ray, and the amplitude spectrum of the chip was tested, and it was found that the energy resolution was approximately 27%, which indicates that the chip can be used in triple GEM detectors.
文摘Using a scanning electron microscope (SEM) in the back-scattered electron (BSE) mode the composition of multi-element specimens may be determined based on the strong dependence of emission coefficient η on the average atomic number of elements Z. The output video signal of the usual BSE detectors is produced from their sensors, and the larger proportion of high-energy electrons with modified spectrum is added. Since η = is/ip (is and ip currents of specimen and probe), better accuracy must be achieved by direct measurements those currents on the specimen surface. Here, an experimental model of a current detector for a presented specimen is described. The cage is mounted on the carousel of the moving specimen stage. The input of the preamplifier is connected to the specimen holder in the form of a disk, the diameter of which is 12 mm. When the probe along its surface scanned, the input potential begins to pulsate with a negative polarity. The output of this preamplifier is connected to a small light-emitting diode, which creates intensity-modulated radiation in the chamber. Thus created the light video signal will be picked up by the photomultiplier of the E-T detector. The modes of true SE and BSE are set by applying tens bias volts of various polarities to the specimens or the cage itself.
文摘A monolithic integrated CMOS preamplifier is presented for neural recording applications. Two AC-coupied capacitors are used to eliminate the large and random DC offsets existing in the electrode-electrolyte interface. Diode-connected nMOS transistors with a negative voltage between the gate and source are candidates for the large resistors necessary for the preamplifier. A novel analysis is given to determine the noise power spectral density. Simulation results show that the two-stage CMOS preamplifier in a closed-loop capacitive feedback configuration provides an AC in-band gain of 38.8dB,a DC gain of 0,and an input-referred noise of 277nVmax, integrated from 0. 1Hz to 1kHz. The preamplifier can eliminate the DC offset voltage and has low input-referred noise by novel circuit configuration and theoretical analysis.
文摘A high gain cascade connected preamplifier for optical receivers is developed with 0.5μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3dB bandwidth of 10GHz, with a small signal gain of around 9dB. The post-stage distributed amplifier （DA） has a -3dB bandwidth of close to 20GHz,with a small signal gain of around 12dB. As a whole,the cascade preamplifier has a measured small signal gain of 21.3dB and a transimpedance of 55.3dBΩ in a 50Ω system. With a higher signal-to-noise ratio than that of the TIA and a markedly improved waveform distortion compared with that of the DA, the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence is clear and symmetric.
文摘A single power supply common-gate （CG） current mode transimpedance preamplifier （TIA） is developed with a 0.5μm GaAs PHEMT process. The amplifier has a measured - 3dB bandwidth of 7. 5GHz and a transimpedance gain of 45dBΩ. Both the input and output voltage standing wave ratios （VSWR） are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22pA/√Hz, with an average value of 17. 2pA/√Hz. Having a timing jitter of 14ps and eye amplitude of about 138mV,the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence （PRBS） is clear and satisfactory.
基金The Key Technology Research and Development Program of Jiangsu Province ( No. BE2008128)
文摘A 10 Gbit/s burst-mode preamplifier is designed for passive optical networks （PONs）. To achieve a high dynamic range and fast response, the circuit is DC coupled, and a feed-back type peak detector is designed to perform auto-gaincontrol and threshold extraction. Regulated cascade （RGC） architecture is exploited as the input stage to reduce the input impedance of the circuit and isolate the large parasitic capacitance including the photodiode capacitance from the determination pole, thus increasing the bandwidth. This preamplifier is implemented using the low-cost 0. 13 ixm CMOS technology. The die area is 425 μm × 475 μm and the total power dissipation is 23.4 mW. The test results indicate that the preamplifier can work at a speed from 1.25 to 10.312 5 Gbit/s, providing a high transimpedance gain of 64.0 dBΩ and a low gain of 54. 6 dBl2 with a dynamic input range of over 22.9 dB. The equivalent input noise current is 23. 4 pA/ Hz1/2. The proposed burst amplifier satisfies related specifications defined in 10G-EPON and XG-PON standards.
文摘The service provided by the GC(Gamma Cameras)in the Nuclear Medicine departments fails because of their breakdown,generally due to the associated electronics and not to the physical detection components.For this reason,it was decided to develop an electronic system that allows the recovery and optimization of disused GC,starting with the design of the preamplifier for a PMT(photomultiplier tube).The circuit was designed and simulated and the list of components necessary for the construction of the preamplifier was generated,as well as the printed circuit board was designed for its assembly.By simulating the preamplifier this worked in linear mode.This determines that the amplitude of the output signal is proportional to the amount of charge delivered by the detector.This card allows an automatic adjustment of the signals of the PMT as do the modern GC.
基金National Natural Science Fundation of China (10675153)in part by the Third World Academy of Sciencesin part by the Institute of Modern Physics, Chinese Academy of Sciences
文摘In this paper,to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors,the CMOS FET is implemented as a feedback capacitor Cfp,so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit,the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns,the output resistance less than 94 ? and the linearity almost good.
基金Supported in part by the Third World Academy of Sciences, in part by the Institute of Modern Physics, Chinese Academy of Sciencesin part by the National Natural Science Foundation of China (10675153)
文摘In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94? and the linearity almost good.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11604350 and 61405211
文摘We demonstrate a novel picosecond optical parametric preamplification to generate high-stability, high-energy and high-contrast seed pulses. The 5ps seed pulse is amplified from 60pJ to 300μJ with an 8.6ps/ 3mJ pump laser in a signal stage of short pulse non-collinear optical parametric chirped pulse amplification. The total gain is more than 106 and the rms energy stability is under 1.35%. The contrast ratio is higher than 10s within a scale of 20ps before the main pulse. Consequently, the improvement factor of the signal contrast is approximately equal to the gain 106 outside the pump window.
基金The project supported by the major upgrade program of the Beijing Electron Positron Collider Ⅱ
文摘A time-of-flight (TOF) detector has been used in the BESIII experiment to provide charged particle identification. In this paper, we present a novel high performance differential amplifier, which has been designed for amplifying the signals from the detectors. The preamplifier can amplify differential signals, which can help to eliminate the common mode pickup, and increase the signal-to-noise ratio (SNR). Bilinear gain is one of the features of this preamplifier, which greatly increases the dynamic range and avoids the dead time of the preamplifier. In order to describe the bilinear gain, a 4-parameter function is developed. And this 4-parameter function can also be used in the calibration of the time walk caused by the amplitude due to the bilinear gain. The preamplifier has a gain about 10V/V with a small signal and about 1.0V/V with a large signal. The rise time of the preamp is less than 2 ns.
基金Project supported by the National Natural Science Foundation of China (Grant No 10575124)
文摘Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873 K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073 K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.
文摘Position-sensitive micro-channel plate (MCP) detectors are frequently used for the detection of particles like electrons and ions in atomic collision processes[1??3]. In this report, we present a one-dimensional position-sensitive MCP detector based on a novel parallel-strip resistance anode and a pair of integrated charge sensitive spectroscopy amplifiers.
