As the core carrier of integrated circuits,packaging substrates usually respond in time to the evolution of electronic products.Among which,ceramic substrate materials are desired to have excellent dielectric and volt...As the core carrier of integrated circuits,packaging substrates usually respond in time to the evolution of electronic products.Among which,ceramic substrate materials are desired to have excellent dielectric and voltage-resistant properties,high reliability,and good thermal and chemical stability.The β-Ga_(2)O_(3)ceramic prepared in this work has excellent microwave dielectric properties with a Q×f value of ~133140 GHz(Q=1/tanδ),ε_(r) of ~9.57,and temperature coefficient of resonant frequency(TCF)value of ~−58.2 ppm℃^(−1),which meet the requirements of high-frequency packages.Another highlight is that the β-Ga_(2)O_(3)ceramic has a higher dielectric strength of ~30 kV mm^(−1)compared with conventional ceramic substrates,such as Al_(2)O_(3),AlN,etc.,allowing it to be used in higher-power circuits.Meanwhile,a flexural strength of~110 MPa,a thermal expansion of ~+8.9 ppm℃^(−1) and a thermal conductivity of ~15 Wm^(−1)K^(−1) have been achieved in the β-Ga_(2)O_(3)ceramic.In addition,a patch antenna for sub-6 GHz applications was designed and fabricated using the Ga_(2)O_(3)ceramic substrate,showing good performance with a wide bandwidth of ~140 MHz,a return loss S11 of ~−21 dB at the center frequency,a radiation efficiency of ~92% and a gain of ~5 dBi.The stated results guarantee that the Ga_(2)O_(3)ceramic shows great potential in applications towards high-frequency and high-power fields.展开更多
基金supported by the National Natural Science Foundation of China(52072295,62175056)the International Cooperation Project of Shaanxi Province(2021KWZ-10)+2 种基金the Zhejiang Provincial Science and Technology Program under Grant LGG20F010007the Fundamental Research Funds for the Central Universitythe 111 Project of China(B14040).
文摘As the core carrier of integrated circuits,packaging substrates usually respond in time to the evolution of electronic products.Among which,ceramic substrate materials are desired to have excellent dielectric and voltage-resistant properties,high reliability,and good thermal and chemical stability.The β-Ga_(2)O_(3)ceramic prepared in this work has excellent microwave dielectric properties with a Q×f value of ~133140 GHz(Q=1/tanδ),ε_(r) of ~9.57,and temperature coefficient of resonant frequency(TCF)value of ~−58.2 ppm℃^(−1),which meet the requirements of high-frequency packages.Another highlight is that the β-Ga_(2)O_(3)ceramic has a higher dielectric strength of ~30 kV mm^(−1)compared with conventional ceramic substrates,such as Al_(2)O_(3),AlN,etc.,allowing it to be used in higher-power circuits.Meanwhile,a flexural strength of~110 MPa,a thermal expansion of ~+8.9 ppm℃^(−1) and a thermal conductivity of ~15 Wm^(−1)K^(−1) have been achieved in the β-Ga_(2)O_(3)ceramic.In addition,a patch antenna for sub-6 GHz applications was designed and fabricated using the Ga_(2)O_(3)ceramic substrate,showing good performance with a wide bandwidth of ~140 MHz,a return loss S11 of ~−21 dB at the center frequency,a radiation efficiency of ~92% and a gain of ~5 dBi.The stated results guarantee that the Ga_(2)O_(3)ceramic shows great potential in applications towards high-frequency and high-power fields.
