Double-sided arc welding with a single power source can effectively increase the weld penetration, diminish distortion, improve welding speed and save energy. Compared to conventional arc welding processes, double-sid...Double-sided arc welding with a single power source can effectively increase the weld penetration, diminish distortion, improve welding speed and save energy. Compared to conventional arc welding processes, double-sided arc welding can generate a penetrating electromaguetic field to help to form fine dendritic microstrueture in the weld due to the symmetry of heating. Type 1Cr1SNi9Ti aastenitic stainless steel was bead-on-plate welded with double-sided arc welding and conventional plasma arc welding processes, respectively, and microstructure in the weld, heat-affected zone and base metal were examined. After analyzing the black carbon-enriched band in the weld during plasma arc welding with electron probe microanalyzer （ EPMA ） and X-ray diffraction （XRD） technology, it was found that the black band was shaped from the aggregation of ferrite in the fasion boundary. Hardness measurement showed that this black band does not apparently affect the microhardncss distribution in the weld.展开更多
The electrical contact properties of Co/4H-SiC structures are investigated.A carbon interfacial layer between a Co film and SiC is used to improve the Ohmic contact properties significantly.The C film is deposited pri...The electrical contact properties of Co/4H-SiC structures are investigated.A carbon interfacial layer between a Co film and SiC is used to improve the Ohmic contact properties significantly.The C film is deposited prior to Co film deposition on SiC using DC sputtering.The high quality Ohmic contact and specific contact resistivity of 2.30×10-6Ω·cm2 are obtained for Co/C/SiC structures after two-step annealing at 500℃for 10 min and 1050℃for 3 min.The physical properties of the contacts are examined by using XRD.The results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing and carbon-enriched layer is produced below the contact,playing a key role in forming an Ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons.The thermal stability of Au/Co/C/SiC Ohmic contacts is investigated.The contacts remain Ohmic on doped n-type（2.8×1018 cm-3） 4H-SiC after thermal aging treatment at 500℃for 20 h.展开更多
文摘Double-sided arc welding with a single power source can effectively increase the weld penetration, diminish distortion, improve welding speed and save energy. Compared to conventional arc welding processes, double-sided arc welding can generate a penetrating electromaguetic field to help to form fine dendritic microstrueture in the weld due to the symmetry of heating. Type 1Cr1SNi9Ti aastenitic stainless steel was bead-on-plate welded with double-sided arc welding and conventional plasma arc welding processes, respectively, and microstructure in the weld, heat-affected zone and base metal were examined. After analyzing the black carbon-enriched band in the weld during plasma arc welding with electron probe microanalyzer （ EPMA ） and X-ray diffraction （XRD） technology, it was found that the black band was shaped from the aggregation of ferrite in the fasion boundary. Hardness measurement showed that this black band does not apparently affect the microhardncss distribution in the weld.
基金Project supported by the Scientific and Technological Development Plan of Lanzhou City,China(No2009-1-1)
文摘The electrical contact properties of Co/4H-SiC structures are investigated.A carbon interfacial layer between a Co film and SiC is used to improve the Ohmic contact properties significantly.The C film is deposited prior to Co film deposition on SiC using DC sputtering.The high quality Ohmic contact and specific contact resistivity of 2.30×10-6Ω·cm2 are obtained for Co/C/SiC structures after two-step annealing at 500℃for 10 min and 1050℃for 3 min.The physical properties of the contacts are examined by using XRD.The results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing and carbon-enriched layer is produced below the contact,playing a key role in forming an Ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons.The thermal stability of Au/Co/C/SiC Ohmic contacts is investigated.The contacts remain Ohmic on doped n-type（2.8×1018 cm-3） 4H-SiC after thermal aging treatment at 500℃for 20 h.
