Ferroelectric thin films have gained significant attention in recent years due to their potential applications in electronic devices such as ferroelectric memories,phase shifters,filters,and energy storage capacitors....Ferroelectric thin films have gained significant attention in recent years due to their potential applications in electronic devices such as ferroelectric memories,phase shifters,filters,and energy storage capacitors.In the present study,a local chemical design strategy was employed to enhance the ferroelectric and dielectric characteristics of Sr_(0.6)Ba_(0.4)TiO_(3)thin films.The samples were prepared using the chemical solution deposition technique,with Bi^(3+)ions being introduced into the A-sites.As the concentration of Bi^(3+)ions increased,both the maximum polarization and the recoverable energy storage density showed a gradual rise,reaching values of 11.77μC cm^(-2)and 4.19 J cm^(-3),respectively,under an applied voltage of 30 V.Notably.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.52302151,52122205,12302429 and 11932016)Qin Chuang Yuan Cited High-level Innovation and Entrepreneurship Talent Project(Grant No.QCYRCXM-2023-075)+2 种基金Xidian University Specially Funded Project for Interdisciplinary Exploration(Grant No.TZJH2024054)Fundamental Research Funds for the Central Universities(Grant No.ZYTS24122)Start-up Foundation of Xidian University(Grant No.10251220008).
文摘Ferroelectric thin films have gained significant attention in recent years due to their potential applications in electronic devices such as ferroelectric memories,phase shifters,filters,and energy storage capacitors.In the present study,a local chemical design strategy was employed to enhance the ferroelectric and dielectric characteristics of Sr_(0.6)Ba_(0.4)TiO_(3)thin films.The samples were prepared using the chemical solution deposition technique,with Bi^(3+)ions being introduced into the A-sites.As the concentration of Bi^(3+)ions increased,both the maximum polarization and the recoverable energy storage density showed a gradual rise,reaching values of 11.77μC cm^(-2)and 4.19 J cm^(-3),respectively,under an applied voltage of 30 V.Notably.
