The negative ion based neutral beam injector(NNBI)with a beam energy of 400 keV is one of the subsystems at the Comprehensive Research fAcility for Fusion Technology(CRAFT)in China.The distributed capacitance of the h...The negative ion based neutral beam injector(NNBI)with a beam energy of 400 keV is one of the subsystems at the Comprehensive Research fAcility for Fusion Technology(CRAFT)in China.The distributed capacitance of the high-voltage components is an important basis for the design of surge suppression devices at CRAFT NNBI.This study conducted calculations of distributed capacitance for the key components,including the high-voltage deck,transmission line and isolation transformer in the power supply system using the finite element method.The relationship between the high-voltage deck(HVD)distributed capacitance and the distance from the wall is discussed.The differences in distributed capacitance and energy storage between noncoaxial and coaxial transmission lines are also debated.Finally,the capacitance between the primary and secondary windings of the-400 kV isolation transformer,as well as between the secondary winding and the oil tank casing,was calculated.展开更多
The implementation of multifunctional application scenarios for mobile terminal devices has increased the energy density requirements of batteries.Increasing the charging voltage can rapidly increase the specific capa...The implementation of multifunctional application scenarios for mobile terminal devices has increased the energy density requirements of batteries.Increasing the charging voltage can rapidly increase the specific capacity of layered transition metal oxides;however,it also exacerbates the release of lattice oxygen and the contraction of the unit cell.Ternary materials are designed in a secondary particle state to meet the requirements of power battery applications.Therefore,to create ternary materials that can operate under ultrahigh voltages,attention should be given to both surface modification and particle integrity maintenance.By utilizing elemental selenium(Se)with a low melting point,easy sublimation,and multiple variable valence states,deep grain boundary modification was implemented inside the particles.The performance of the cathode material was evaluated through pouch cells,and the improvement mechanism was explored through molecular dynamics simulation calculations.Under the protection of a three-dimensional Se-rich modified layer,LiNi_(1/3)Co_(1/3)Mn_(1/3)O_(2)achieved stable operation at ultrahigh voltages(4.6 V vs.Li/Li^(+));a sacrificial protection mechanism based on the chronic decomposition of the Se-rich layer was proposed to explain the efficacy of Se modification in stabilizing ternary materials.This deep grain boundary modification based on elemental Se provides a new solution for the ultrahigh-voltage operation of transition metal oxides and provides a scientific basis and technical support for solving the interface contact problem of all-solid-state batteries.展开更多
The susceptibility of ore particles to electrical breakdown plays a critical role for high voltage pulse(HVP)breakage,yet its quantitative characterization still lacks deep understanding.Two indicators,namely breakdow...The susceptibility of ore particles to electrical breakdown plays a critical role for high voltage pulse(HVP)breakage,yet its quantitative characterization still lacks deep understanding.Two indicators,namely breakdown delay time(T_(d))and breakdown strength(E_(b))were compared,based on analysis on the two breakdown modes namely wavefront mode and post-wave mode.It was found that T_(d) is more suitable to characterize the susceptibility of ore particles to electrical breakdown in HVP breakage than E_(b).A probabilistic model based on the Weibull distribution is developed to describe the relation of breakdown probability to T_(d).Regression analyses were conducted to investigate how operating parameters and particle properties influence Td and size reduction degree of ore particles in HVP breakage.The regressed models demonstrate potential capability to predict metallic minerals content and HVP breakage degree based on operating parameters and particle properties.展开更多
Accurate estimation of battery health status plays a crucial role in battery management systems.However,the lack of operational data still affects the accuracy of battery state of health(SOH)estimation.For this reason...Accurate estimation of battery health status plays a crucial role in battery management systems.However,the lack of operational data still affects the accuracy of battery state of health(SOH)estimation.For this reason,a SOH estimation method is proposed based on charging data reconstruction combined with image processing.The charging voltage data is used to train the least squares generative adversarial network(LSGAN),which is validated under different levels of missing data.From a visual perspective,the Gram angle field method is applied to convert one-dimensional time series data into image data.This method fully preserves the time series characteristics and nonlinear evolution patterns,which avoids the difficulties and limited expressive power associated with manual feature extraction.At the same time,the Swin Transformer model is introduced to extract global structures and local details from images,enabling better capture of sequence change trends.Combined with the long short-term memory network(LSTM),this enables accurate estimation of battery SOH.Two different types of batteries are used to validate the test.The experimental results show that the proposed method has good estimation accuracy under different training proportions.展开更多
Metal-insulator-metal aluminium electrolytic capacitors(MIM-AECs)combine high capacity-density and high breakdown field strength of solid AECs with high-frequency responsibility,wide workingtemperature window and wate...Metal-insulator-metal aluminium electrolytic capacitors(MIM-AECs)combine high capacity-density and high breakdown field strength of solid AECs with high-frequency responsibility,wide workingtemperature window and waterproof properties of MIM nanocapacitors.However,interfacial atomic diffusion poses a major obstacle,preventing the high-voltage MIM-AECs exploitation and thereby hampering their potential and advantages in high-power and high-energy-density applications.Here,an innovative high-voltage MIM-AECs were fabricated.The AlPO_(4)buffer layer is formed on AlO(OH)/AAO/Al surface by using H_(3)PO_(4)treatment,then a stable van der Waals(vdW)SnO_(2)/AlPO_(4)/AAO/Al multilayer was constructed via atomic layer deposition(ALD)technology.Due to higher diffusion barrier and lower carrier migration of SnO_(2)/AlPO_(4)/AAO interfaces,Sn atom diffusion is inhibited and carrier acceleration by electric field is weakened,guaranteeing high breakdown field strength of dielectric AAO and avoiding local breakdown risks.Through partial etching to hydrated AlO(OH)by H_(3)PO_(4)treatment,the tunnel was further opened up to facilitate subsequent ALD-SnO_(2)entry,thus obtaining a high SnO_(2)coverage.The SnO_(2)/AlPO_(4)/AAO/Al capacitors show a comprehensive performance in high-voltage(260 V),hightemperature(335℃),high-humidity(100%RH)and high-frequency response(100 k Hz),outperforming commercial solid-state AECs,and high-energy density(8.6μWh/cm^(2)),markedly exceeding previously reported MIM capacitors.The work lays the foundation for next-generation capacitors with highvoltage,high-frequency,high-temperature and high-humidity resistance.展开更多
Capacitive voltage transformers (CVTs) are essential in high-voltage systems. An accurate error assessment is crucial for precise energy metering. However, tracking real-time quantitative changes in capacitive voltage...Capacitive voltage transformers (CVTs) are essential in high-voltage systems. An accurate error assessment is crucial for precise energy metering. However, tracking real-time quantitative changes in capacitive voltage transformer errors, particularly minor variations in multi-channel setups, remains challenging. This paper proposes a method for online error tracking of multi-channel capacitive voltage transformers using a Co-Prediction Matrix. The approach leverages the strong correlation between in-phase channels, particularly the invariance of the signal proportions among them. By establishing a co-prediction matrix based on these proportional relationships, The influence of voltage changes on the primary measurements is mitigated. Analyzing the relationships between the co-prediction matrices over time allows for inferring true measurement errors. Experimental validation with real-world data confirms the effectiveness of the method, demonstrating its capability to continuously track capacitive voltage transformer measurement errors online with precision over extended durations.展开更多
Three-level neutral point clamped(NPC)inverters have been widely applied in the high voltage and high power drive fields.The capacitance voltage balancing algorithm is a hot topic that many specialists and scholars ha...Three-level neutral point clamped(NPC)inverters have been widely applied in the high voltage and high power drive fields.The capacitance voltage balancing algorithm is a hot topic that many specialists and scholars have been working on.V arious capacitance voltage balancing strategies have been studied,in which the redundant short vectors are not fully utilized.In order to increase the capacitance voltage control effect of the short vectors,a new algorithm is proposed.展开更多
Photoluminescence （PL） measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, ...Photoluminescence （PL） measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy （SIMS）, transmission electron microscope （TEM）, and capacitance-voltage （C-V） measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 1011 cm-2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results.展开更多
Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models i...Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor（MOSFET） are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a shortchannel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.展开更多
For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To...For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.展开更多
In order to undertake theory analysis in the application area of switching,frequency and power devices,an analytical model for capacitance-voltage (C-V) characteristics of ion-implanted 4H silicon carbide (SiC) Schott...In order to undertake theory analysis in the application area of switching,frequency and power devices,an analytical model for capacitance-voltage (C-V) characteristics of ion-implanted 4H silicon carbide (SiC) Schottky barrier diodes (SBDs) was investigated.This model was established by considering the effects of incomplete ionization of nitrogen in 4H-SiC,the Poole-Frenkel on the ionization energy,and the ion-implanted nitrogen donor profiles.The simulation process is discussed in detail for two multiple nitrogen ion-implanted 4H-SiC SBDs (three and four fold ion-implantations) designed and fabricated in the experiments using this model at different activation rates.An agreement between the modeled C-V curves and the measured results for two ion-implanted 4H-SiC SBDs fabricated is shown.This capacitance model has the potential to be used to simulate and design ion-implanted SiC devices concerned in the future.展开更多
Au/n-Si （MS） structures with a high dielectric interlayer （0.03 graphene-doped PVA） are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-v...Au/n-Si （MS） structures with a high dielectric interlayer （0.03 graphene-doped PVA） are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage （C-V） and conductance-voltage （G/w-V） measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms （ND）, barrier height （ ФB（ C - V） ）, depletion layer width （WD） and series resistance （Rs） show fairly large illumination dispersion. The voltage-dependent profile of surface states （Nss） and resistance of the structure （Ri ） are also obtained by using the dark-illumination capacitance （Cdark- Cm） and Nicollian-Brews methods, respectively, For a clear observation of changes in electrical parameters with illumination, the values of ND, WD, ФB（O- V） and Rs are drawn as a function of illumination intensity. The values of ND and WD change almost linearly with illumination intensity. On the other hand, Rs decreases almost exponentially with increasing illumination intensity whereas ФB（C - V） increases. The experimental results suggest that the use of a high dielectric interlayer （0.03 graphene-doped PVA） considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications.展开更多
An Ni Schottky contact on the A1GaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the A1GaN/GaN heterostructure is obtained from the forward current-voltage characteristics. With...An Ni Schottky contact on the A1GaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the A1GaN/GaN heterostructure is obtained from the forward current-voltage characteristics. With the measured capacitance-voltage curve and the flat-band voltage, the polarization charge density in the A1GaN/GaN heterostructure is investigated, and a simple formula for calculating the polarization charge density is obtained and analyzed. With the approach described in this paper, the obtained polarization charge density agrees well with the one calculated by self-consistently solving Schrodinger＇s and Poisson＇s equations.展开更多
This paper deduces the expression of the Schottky contact capacitance of AlGaN/A1N/GaN high electron mobility transistors （HEMTs）, which will help to understand the electron depleting process. Some material paramete...This paper deduces the expression of the Schottky contact capacitance of AlGaN/A1N/GaN high electron mobility transistors （HEMTs）, which will help to understand the electron depleting process. Some material parameters related with capacitance-voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier.展开更多
The effects of MoO3thin buffer layer on charge carrier injection and extraction in inverted configuration ITO/ZnO/MEH-PPV(poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene))/MoO3(0,5 nm)/Ag hybrid solar cells a...The effects of MoO3thin buffer layer on charge carrier injection and extraction in inverted configuration ITO/ZnO/MEH-PPV(poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene))/MoO3(0,5 nm)/Ag hybrid solar cells are investigated by capacitance–voltage measurement under dark and light illumination conditions.The efficiency of charge carrier injection and extraction is enhanced by inserting 5 nm MoO3thin layer,resulting in better device performances.Charge carrier transport of the whole device is improved and the interface energy barrier is reduced by inserting 5 nm MoO3thin buffer layer.The device fill factor is increased from 54.1%to 57.5%after modifying 5 nm MoO3.Simulations and experimental results consistently show that in the forward voltage under dark,the device with the 5 nm MoO3thin layer modification generates larger value of capacitance than the device without MoO3layer.While under illumination,the device with the 5 nm MoO3layer generates smaller value of capacitance than the device without the 5 nm MoO3layer in the bias region of reverse and before the peak position of maximum capacitance(VCmax).The underlying mechanism of the MoO3anode buffer layer on device current density–voltage characteristics is discussed.展开更多
This paper investigates the capacitance-voltage （C-V） characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure. The F doping SiCOH films are deposited by decamethylcycl...This paper investigates the capacitance-voltage （C-V） characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasilox-ane [DMCPS） and trifluromethane （CHF3） electron cyclotron resonance plasmas. With the CHF3/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of C-V curves and the increase of fiat-band voltage VFB from -6.1 V to 32.2V are obtained. The excursion of C-V curves and the shift of VFB are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF3/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small VFB of 2.0V.展开更多
Energy density,the Achilles’heel of aqueous supercapacitors,is simultaneously determined by the voltage window and specific capacitance of the carbon materials,but the strategy of synchronously boosting them has rare...Energy density,the Achilles’heel of aqueous supercapacitors,is simultaneously determined by the voltage window and specific capacitance of the carbon materials,but the strategy of synchronously boosting them has rarely been reported.Herein,we demonstrate that the rational utilization of the interaction between redox mediators(RMs)and carbon electrode materials,especially those with rich intrinsic defects,contributes to extended potential windows and more stored charges concurrently.Using 4-hydroxy-2,2,6,6-tetramethylpiperidinyloxyl(4OH-TEMPO)and intrinsic defect-rich carbons as the RMs and electrode materials,respectively,the potential window and capacitance are increased by 67%and sixfold in a neutral electrolyte.Moreover,this strategy could also be applied to alkaline and acid electrolytes.The first-principle calculation and experimental results demonstrate that the strong interaction between 4OH-TEMPO and defectrich carbons plays a key role as preferential adsorbed RMs may largely prohibit the contact of free water molecules with the electrode materials to terminate the water splitting at elevated potentials.For the RMs offering weaker interaction with the electrode materials,the water splitting still proceeds with a thus sole increase of the stored charges.The results discovered in this work could provide an alternative solution to address the low energy density of aqueous supercapacitors.展开更多
The concept of Space Charge Capacitance (SCC) is proposed and used to make a novel analytical charge model of quantized inversion layer in MOS structures. Based on SCC, continuous expressions of surface potential and ...The concept of Space Charge Capacitance (SCC) is proposed and used to make a novel analytical charge model of quantized inversion layer in MOS structures. Based on SCC, continuous expressions of surface potential and inversion layer carrier density are derived. Quantum mechanical effects on both inversion layer carrier density and surface potential are extensively included. The accuracy of the model is verified by the numerical solution to Schrodinger and Poisson equation and the model is demonstrated,too.展开更多
Manganese dioxide （MnO2） was prepared using the ultrasonic method. Its electrochemical performance was evaluated as the cathode material for a high voltage hybrid capacitor. And the specific capacitance of the MnO2 ...Manganese dioxide （MnO2） was prepared using the ultrasonic method. Its electrochemical performance was evaluated as the cathode material for a high voltage hybrid capacitor. And the specific capacitance of the MnO2 electrode reached 240 F·g^-1. The new hybrid capacitor was constructed, combining A1/Al2O3 as the anode and MnO2 as the cathode with electrolyte for the aluminum electrolytic capacitor to solve the problem of low working voltage of a supercapacitor unit. The results showed that the hybrid capacitor had a high energy density and the ability of quick charging and discharging according to the electrochemical performance test. The capacitance was 84.4 μF, and the volume and mass energy densities were greatly improved compared to those of the traditional aluminum electrolytic capacitor of 47 μF. The analysis of electrochemical impedance spectroscopy （EIS） showed that the hybrid capacitor had good impedance characteristics.展开更多
Due to its ultra-fast charge/discharge rate,long cyclic life span,and environmental benignity,aqueous supercapacitor(SC)is considered as a proper nextgeneration energy storage device.Unfortunately,limited by undesirab...Due to its ultra-fast charge/discharge rate,long cyclic life span,and environmental benignity,aqueous supercapacitor(SC)is considered as a proper nextgeneration energy storage device.Unfortunately,limited by undesirable water electrolysis and unreasonable electrode potential range,aqueous SC normally generates a narrow cell voltage,resulting in a low energy density.To address such challenge,enormous efforts have been made to construct high-voltage aqueous SCs.Despite these achievements,the systematic reviews about this field are still rare.To fill this knowledge gap,this review summarizes the recent advances about boosting the cell voltage of aqueous SCs.From the viewpoint of electrode,doping alkali cations,modulating the electrode mass ratio,and optimizing the surface charge density are regarded as three effective pathways to achieve this goal.However,adjusting the appropriate pH level,introducing redox mediators,and constructing“water-in-salt”electrolyte are other three universal routes from the electrolyte aspect.Furthermore,it is also effective to obtain the high-voltage aqueous SCs through asymmetric design,such as designing asymmetric SCs.The confronting challenges and future development tendency towards the high-voltage aqueous SCs are further discussed.展开更多
基金supported by the Comprehensive Research Facility for Fusion Technology Program of China(No.2018000052-73-01-001228)National Natural Science Foundation of China(No.11975263)Postgraduate Research and Practice Innovation Program of NUAA(No.xcxjh20231501)。
文摘The negative ion based neutral beam injector(NNBI)with a beam energy of 400 keV is one of the subsystems at the Comprehensive Research fAcility for Fusion Technology(CRAFT)in China.The distributed capacitance of the high-voltage components is an important basis for the design of surge suppression devices at CRAFT NNBI.This study conducted calculations of distributed capacitance for the key components,including the high-voltage deck,transmission line and isolation transformer in the power supply system using the finite element method.The relationship between the high-voltage deck(HVD)distributed capacitance and the distance from the wall is discussed.The differences in distributed capacitance and energy storage between noncoaxial and coaxial transmission lines are also debated.Finally,the capacitance between the primary and secondary windings of the-400 kV isolation transformer,as well as between the secondary winding and the oil tank casing,was calculated.
基金supported by the National Natural Science Foundation of China (52302259)the China Postdoctoral Science Foundation (CPSF) under Grant Number 2023M741479+4 种基金the Postdoctoral Fellowship Program of CPSF under Grant Number GZB20240280the Jiangxi Provincial Natural Science Foundation (20224ACB218006)the financial support from High-level Talent Research Special Funds of Jiangxi University of Science and Technology (Grant No. 205200100670)the Jiangxi Provincial Key Laboratory of Power Energy Storage Batteries and Materials (2024SSY10011)the Major Scientific and Technological Research R&D Special Project of Jiangxi Province(20244AFI92002)
文摘The implementation of multifunctional application scenarios for mobile terminal devices has increased the energy density requirements of batteries.Increasing the charging voltage can rapidly increase the specific capacity of layered transition metal oxides;however,it also exacerbates the release of lattice oxygen and the contraction of the unit cell.Ternary materials are designed in a secondary particle state to meet the requirements of power battery applications.Therefore,to create ternary materials that can operate under ultrahigh voltages,attention should be given to both surface modification and particle integrity maintenance.By utilizing elemental selenium(Se)with a low melting point,easy sublimation,and multiple variable valence states,deep grain boundary modification was implemented inside the particles.The performance of the cathode material was evaluated through pouch cells,and the improvement mechanism was explored through molecular dynamics simulation calculations.Under the protection of a three-dimensional Se-rich modified layer,LiNi_(1/3)Co_(1/3)Mn_(1/3)O_(2)achieved stable operation at ultrahigh voltages(4.6 V vs.Li/Li^(+));a sacrificial protection mechanism based on the chronic decomposition of the Se-rich layer was proposed to explain the efficacy of Se modification in stabilizing ternary materials.This deep grain boundary modification based on elemental Se provides a new solution for the ultrahigh-voltage operation of transition metal oxides and provides a scientific basis and technical support for solving the interface contact problem of all-solid-state batteries.
基金The financial supports from National Natural Science Foundation of China(Nos.52574313,52204272 and 52074091)to this project。
文摘The susceptibility of ore particles to electrical breakdown plays a critical role for high voltage pulse(HVP)breakage,yet its quantitative characterization still lacks deep understanding.Two indicators,namely breakdown delay time(T_(d))and breakdown strength(E_(b))were compared,based on analysis on the two breakdown modes namely wavefront mode and post-wave mode.It was found that T_(d) is more suitable to characterize the susceptibility of ore particles to electrical breakdown in HVP breakage than E_(b).A probabilistic model based on the Weibull distribution is developed to describe the relation of breakdown probability to T_(d).Regression analyses were conducted to investigate how operating parameters and particle properties influence Td and size reduction degree of ore particles in HVP breakage.The regressed models demonstrate potential capability to predict metallic minerals content and HVP breakage degree based on operating parameters and particle properties.
基金supported in part by the National Natural Science Foundation of China(under Grant 62473309,62203352)the Shaanxi Outstanding Youth Science Fund Project(under Grant 2024JC-JCQN-68)+1 种基金the Xi’an Science and Technology Plan Project(under Grant 24GXFW0050)the Xi’an Key Laboratory(under Grant 24ZDSY0015).
文摘Accurate estimation of battery health status plays a crucial role in battery management systems.However,the lack of operational data still affects the accuracy of battery state of health(SOH)estimation.For this reason,a SOH estimation method is proposed based on charging data reconstruction combined with image processing.The charging voltage data is used to train the least squares generative adversarial network(LSGAN),which is validated under different levels of missing data.From a visual perspective,the Gram angle field method is applied to convert one-dimensional time series data into image data.This method fully preserves the time series characteristics and nonlinear evolution patterns,which avoids the difficulties and limited expressive power associated with manual feature extraction.At the same time,the Swin Transformer model is introduced to extract global structures and local details from images,enabling better capture of sequence change trends.Combined with the long short-term memory network(LSTM),this enables accurate estimation of battery SOH.Two different types of batteries are used to validate the test.The experimental results show that the proposed method has good estimation accuracy under different training proportions.
基金supported by the National Natural Science Foundation of China(52477221,52202296)the Natural Science Foundation of Shaanxi Province(2023KXJ-246,2022JQ-048)。
文摘Metal-insulator-metal aluminium electrolytic capacitors(MIM-AECs)combine high capacity-density and high breakdown field strength of solid AECs with high-frequency responsibility,wide workingtemperature window and waterproof properties of MIM nanocapacitors.However,interfacial atomic diffusion poses a major obstacle,preventing the high-voltage MIM-AECs exploitation and thereby hampering their potential and advantages in high-power and high-energy-density applications.Here,an innovative high-voltage MIM-AECs were fabricated.The AlPO_(4)buffer layer is formed on AlO(OH)/AAO/Al surface by using H_(3)PO_(4)treatment,then a stable van der Waals(vdW)SnO_(2)/AlPO_(4)/AAO/Al multilayer was constructed via atomic layer deposition(ALD)technology.Due to higher diffusion barrier and lower carrier migration of SnO_(2)/AlPO_(4)/AAO interfaces,Sn atom diffusion is inhibited and carrier acceleration by electric field is weakened,guaranteeing high breakdown field strength of dielectric AAO and avoiding local breakdown risks.Through partial etching to hydrated AlO(OH)by H_(3)PO_(4)treatment,the tunnel was further opened up to facilitate subsequent ALD-SnO_(2)entry,thus obtaining a high SnO_(2)coverage.The SnO_(2)/AlPO_(4)/AAO/Al capacitors show a comprehensive performance in high-voltage(260 V),hightemperature(335℃),high-humidity(100%RH)and high-frequency response(100 k Hz),outperforming commercial solid-state AECs,and high-energy density(8.6μWh/cm^(2)),markedly exceeding previously reported MIM capacitors.The work lays the foundation for next-generation capacitors with highvoltage,high-frequency,high-temperature and high-humidity resistance.
文摘Capacitive voltage transformers (CVTs) are essential in high-voltage systems. An accurate error assessment is crucial for precise energy metering. However, tracking real-time quantitative changes in capacitive voltage transformer errors, particularly minor variations in multi-channel setups, remains challenging. This paper proposes a method for online error tracking of multi-channel capacitive voltage transformers using a Co-Prediction Matrix. The approach leverages the strong correlation between in-phase channels, particularly the invariance of the signal proportions among them. By establishing a co-prediction matrix based on these proportional relationships, The influence of voltage changes on the primary measurements is mitigated. Analyzing the relationships between the co-prediction matrices over time allows for inferring true measurement errors. Experimental validation with real-world data confirms the effectiveness of the method, demonstrating its capability to continuously track capacitive voltage transformer measurement errors online with precision over extended durations.
文摘Three-level neutral point clamped(NPC)inverters have been widely applied in the high voltage and high power drive fields.The capacitance voltage balancing algorithm is a hot topic that many specialists and scholars have been working on.V arious capacitance voltage balancing strategies have been studied,in which the redundant short vectors are not fully utilized.In order to increase the capacitance voltage control effect of the short vectors,a new algorithm is proposed.
基金supported by the National Natural Science Foundation of China(Grant Nos.61076079 and 61274092)the Doctoral Program Fund of the Ministry of Education of China(Grant No.20090203110012)the Major Program and State Key Program of the National Natural Science Foundation of China(GrantNo.60890191)
文摘Photoluminescence （PL） measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy （SIMS）, transmission electron microscope （TEM）, and capacitance-voltage （C-V） measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 1011 cm-2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results.
基金supported by the National Natural Science Foundation of China(Grant No.61274112)
文摘Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor（MOSFET） are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a shortchannel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.
基金Supported by the Natural Science Foundation of Jiangxi Province under Grant No 20133ACB20005the Key Program of National Natural Science Foundation of China under Grant No 41330318+3 种基金the Key Program of Science and Technology Research of Ministry of Education under Grant No NRE1515the Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province under Grant No 20142BCB22006the Research Foundation of Education Bureau of Jiangxi Province under Grant No GJJ14501the Engineering Research Center of Nuclear Technology Application(East China Institute of Technology)Ministry of Education under Grant NoHJSJYB2016-1
文摘For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.
文摘In order to undertake theory analysis in the application area of switching,frequency and power devices,an analytical model for capacitance-voltage (C-V) characteristics of ion-implanted 4H silicon carbide (SiC) Schottky barrier diodes (SBDs) was investigated.This model was established by considering the effects of incomplete ionization of nitrogen in 4H-SiC,the Poole-Frenkel on the ionization energy,and the ion-implanted nitrogen donor profiles.The simulation process is discussed in detail for two multiple nitrogen ion-implanted 4H-SiC SBDs (three and four fold ion-implantations) designed and fabricated in the experiments using this model at different activation rates.An agreement between the modeled C-V curves and the measured results for two ion-implanted 4H-SiC SBDs fabricated is shown.This capacitance model has the potential to be used to simulate and design ion-implanted SiC devices concerned in the future.
文摘Au/n-Si （MS） structures with a high dielectric interlayer （0.03 graphene-doped PVA） are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage （C-V） and conductance-voltage （G/w-V） measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms （ND）, barrier height （ ФB（ C - V） ）, depletion layer width （WD） and series resistance （Rs） show fairly large illumination dispersion. The voltage-dependent profile of surface states （Nss） and resistance of the structure （Ri ） are also obtained by using the dark-illumination capacitance （Cdark- Cm） and Nicollian-Brews methods, respectively, For a clear observation of changes in electrical parameters with illumination, the values of ND, WD, ФB（O- V） and Rs are drawn as a function of illumination intensity. The values of ND and WD change almost linearly with illumination intensity. On the other hand, Rs decreases almost exponentially with increasing illumination intensity whereas ФB（C - V） increases. The experimental results suggest that the use of a high dielectric interlayer （0.03 graphene-doped PVA） considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10774090 and 11174182)the National Basic Research Program of China (Grant No. 2007CB936602)the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005)
文摘An Ni Schottky contact on the A1GaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the A1GaN/GaN heterostructure is obtained from the forward current-voltage characteristics. With the measured capacitance-voltage curve and the flat-band voltage, the polarization charge density in the A1GaN/GaN heterostructure is investigated, and a simple formula for calculating the polarization charge density is obtained and analyzed. With the approach described in this paper, the obtained polarization charge density agrees well with the one calculated by self-consistently solving Schrodinger＇s and Poisson＇s equations.
基金supported by the National Basic Research Program (973) of China (Grant No.2010CB327500)the National Natural Science Foundation of China (Grant Nos.60976059 and 60890191)
文摘This paper deduces the expression of the Schottky contact capacitance of AlGaN/A1N/GaN high electron mobility transistors （HEMTs）, which will help to understand the electron depleting process. Some material parameters related with capacitance-voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier.
基金supported by the National Basic Research Program of China(2010CB327704)the Research Fund for the Doctoral Program of Higher Education(20130009130001)+3 种基金the National Natural Science Foundation of China(51272022)the Research Fund for the Doctoral Program of Higher Education(20120009130005)the Program for New Century Excellent Talents in University of Ministry of Education of China(NCET-10-0220)the Fundamental Research Funds for the Central Universities(2012JBZ001)
文摘The effects of MoO3thin buffer layer on charge carrier injection and extraction in inverted configuration ITO/ZnO/MEH-PPV(poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene))/MoO3(0,5 nm)/Ag hybrid solar cells are investigated by capacitance–voltage measurement under dark and light illumination conditions.The efficiency of charge carrier injection and extraction is enhanced by inserting 5 nm MoO3thin layer,resulting in better device performances.Charge carrier transport of the whole device is improved and the interface energy barrier is reduced by inserting 5 nm MoO3thin buffer layer.The device fill factor is increased from 54.1%to 57.5%after modifying 5 nm MoO3.Simulations and experimental results consistently show that in the forward voltage under dark,the device with the 5 nm MoO3thin layer modification generates larger value of capacitance than the device without MoO3layer.While under illumination,the device with the 5 nm MoO3layer generates smaller value of capacitance than the device without the 5 nm MoO3layer in the bias region of reverse and before the peak position of maximum capacitance(VCmax).The underlying mechanism of the MoO3anode buffer layer on device current density–voltage characteristics is discussed.
基金Project supported by the National Natural Science Foundation of China (Grant No. 10575074)
文摘This paper investigates the capacitance-voltage （C-V） characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasilox-ane [DMCPS） and trifluromethane （CHF3） electron cyclotron resonance plasmas. With the CHF3/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of C-V curves and the increase of fiat-band voltage VFB from -6.1 V to 32.2V are obtained. The excursion of C-V curves and the shift of VFB are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF3/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small VFB of 2.0V.
基金financially supported by the National Natural Science Foundation of China(22179145,22138013,and 21975287)Shandong Provincial Natural Science Foundation(ZR2020ZD08)+1 种基金Taishan Scholar Project(no.ts201712020)the startup support grant from China University of Petroleum(East China)
文摘Energy density,the Achilles’heel of aqueous supercapacitors,is simultaneously determined by the voltage window and specific capacitance of the carbon materials,but the strategy of synchronously boosting them has rarely been reported.Herein,we demonstrate that the rational utilization of the interaction between redox mediators(RMs)and carbon electrode materials,especially those with rich intrinsic defects,contributes to extended potential windows and more stored charges concurrently.Using 4-hydroxy-2,2,6,6-tetramethylpiperidinyloxyl(4OH-TEMPO)and intrinsic defect-rich carbons as the RMs and electrode materials,respectively,the potential window and capacitance are increased by 67%and sixfold in a neutral electrolyte.Moreover,this strategy could also be applied to alkaline and acid electrolytes.The first-principle calculation and experimental results demonstrate that the strong interaction between 4OH-TEMPO and defectrich carbons plays a key role as preferential adsorbed RMs may largely prohibit the contact of free water molecules with the electrode materials to terminate the water splitting at elevated potentials.For the RMs offering weaker interaction with the electrode materials,the water splitting still proceeds with a thus sole increase of the stored charges.The results discovered in this work could provide an alternative solution to address the low energy density of aqueous supercapacitors.
文摘The concept of Space Charge Capacitance (SCC) is proposed and used to make a novel analytical charge model of quantized inversion layer in MOS structures. Based on SCC, continuous expressions of surface potential and inversion layer carrier density are derived. Quantum mechanical effects on both inversion layer carrier density and surface potential are extensively included. The accuracy of the model is verified by the numerical solution to Schrodinger and Poisson equation and the model is demonstrated,too.
文摘Manganese dioxide （MnO2） was prepared using the ultrasonic method. Its electrochemical performance was evaluated as the cathode material for a high voltage hybrid capacitor. And the specific capacitance of the MnO2 electrode reached 240 F·g^-1. The new hybrid capacitor was constructed, combining A1/Al2O3 as the anode and MnO2 as the cathode with electrolyte for the aluminum electrolytic capacitor to solve the problem of low working voltage of a supercapacitor unit. The results showed that the hybrid capacitor had a high energy density and the ability of quick charging and discharging according to the electrochemical performance test. The capacitance was 84.4 μF, and the volume and mass energy densities were greatly improved compared to those of the traditional aluminum electrolytic capacitor of 47 μF. The analysis of electrochemical impedance spectroscopy （EIS） showed that the hybrid capacitor had good impedance characteristics.
基金financially supported by research grants from the Natural Science Foundation of China(51702032)Natural Science Foundation of Chongqing(cstc2018jcyjAX0375)+1 种基金Fundamental Research Funds for the Central Universities(2019CDXYDL0007)Key Innovation Project for Clinical Technology of the Second Affiliated Hospital of Army Medical University(2018JSLC0025).
文摘Due to its ultra-fast charge/discharge rate,long cyclic life span,and environmental benignity,aqueous supercapacitor(SC)is considered as a proper nextgeneration energy storage device.Unfortunately,limited by undesirable water electrolysis and unreasonable electrode potential range,aqueous SC normally generates a narrow cell voltage,resulting in a low energy density.To address such challenge,enormous efforts have been made to construct high-voltage aqueous SCs.Despite these achievements,the systematic reviews about this field are still rare.To fill this knowledge gap,this review summarizes the recent advances about boosting the cell voltage of aqueous SCs.From the viewpoint of electrode,doping alkali cations,modulating the electrode mass ratio,and optimizing the surface charge density are regarded as three effective pathways to achieve this goal.However,adjusting the appropriate pH level,introducing redox mediators,and constructing“water-in-salt”electrolyte are other three universal routes from the electrolyte aspect.Furthermore,it is also effective to obtain the high-voltage aqueous SCs through asymmetric design,such as designing asymmetric SCs.The confronting challenges and future development tendency towards the high-voltage aqueous SCs are further discussed.
