This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is ...This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is to improve the optical coupling between the laser and modulator;another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator.The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA.Output power at 100mA is more than 10mW.The extinction characteristics,modulation bandwidth,and electrical return loss are measured.3dB bandwidth more than 10GHz is monitored.展开更多
We have realized integration of evanescent wave coupled photodetector(ECPD)and multi-quantum well(MQW)semiconductor optical amplifier(SOA)on MOCVD platform by investigating butt-joint regrowth method of thick InP/InGa...We have realized integration of evanescent wave coupled photodetector(ECPD)and multi-quantum well(MQW)semiconductor optical amplifier(SOA)on MOCVD platform by investigating butt-joint regrowth method of thick InP/InGaAsP waveguides to deep etched SOA mesas.The combination of inductively coupled plasma etching and wet chemical etching technique has been studied to define the final mesa shape before regrowth.By comparing the etching profiles of different non-selective etchants,we have obtained a controllable non-reentrant mesa shape with smooth sidewall by applying one step 2 HBr:2 H_(3)PO_(4):K_(2)Cr_(2)O_(7)wet etching.A high growth temperature of 680℃is found helpful to enhance planar regrowth.By comparing the growth morphologies and simulating optical transmission along different directions,we determined that waveguides should travel across the regrowth interface along the[110]direction.The relation between growth rate and mask design has been extensively studied and the result can provide an important guidance for future mask design and vertical alignment between the active and passive cores.ECPD-SOA integrated device has been successfully achieved by this method without further regrowth steps and provided a responsivity of 7.8 A/W.The butt-joint interface insertion loss is estimated to be 1.05 dB/interface.展开更多
This paper presents an experimental investigation of laser welding low carbon galvanized steel in butt-joint configurations. The experimental work is focused on the effects of various laser welding parameters on the w...This paper presents an experimental investigation of laser welding low carbon galvanized steel in butt-joint configurations. The experimental work is focused on the effects of various laser welding parameters on the welds quality. The investigations are based on a structured experimental design using the Taguchi method. Welding experiments are conducted using a 3 kW Nd:YAG laser source. The selected laser welding parameters (laser power, welding speed, laser fiber diameter, gap between sheets and sheet thickness) are combined and used to evaluate the variation of four weld quality attributes (bead width, penetration depth, underfill and hardness) and to identify the possible relationship between welding parameters and weld physical and geometrical attributes. The effects of these parameters are studied using ANOVA to find their contributions to the variation of different weld characteristics. Plots of the main effects and the interaction effects are also used to understand the influence of the welding parameters. The results reveal that all welding parameters are relevant to bead width (BDW) and depth of penetration (DOP) with a relative predominance of laser power and welding speed. The effect of laser fiber diameter on penetration depth is insignificant. Typical gap-dependent weld shapes show that a small gap results in a narrower and deeper weld. Due to the standard sheared edge, an underfill between 5% and 10% occurs for no-gap experiments. The resulting hardness values are relatively similar for all the experimental tests.展开更多
The characteristics of thickness enhancement fact or and bandgap wavelength of selectively grown InGaAsP are investigated.A high thi ckness enhancement factor of 2.9 is obtained.Spotsize converter integrated DFB las...The characteristics of thickness enhancement fact or and bandgap wavelength of selectively grown InGaAsP are investigated.A high thi ckness enhancement factor of 2.9 is obtained.Spotsize converter integrated DFB lasers are fabricated by using the technique of SAG.The threshold current is as low as 10.8mA.The output power is 10mW at 60mA without coating and the SMSR is 35.8dB.The vertical far field angle (FWHM) is decreased from 34° to 9°.The to lerance of 1dBm misalignment is 3.4μm vertically.展开更多
We demonstrate a ridge waveguide sampled-grating distributed-feedback laser with quasi-continuous wavelength coverage over a 35nm range. The design is based on a 320nm-thick butt jointed passive waveguide optimized fo...We demonstrate a ridge waveguide sampled-grating distributed-feedback laser with quasi-continuous wavelength coverage over a 35nm range. The design is based on a 320nm-thick butt jointed passive waveguide optimized for carrier injection tuning. The butt-joint technology enable optimize the passive waveguide as well as active section. By tuning mirror sections,the laser provides 35nm tuning while maintaining 〉30dB sidemode suppression ratio.展开更多
文摘This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is to improve the optical coupling between the laser and modulator;another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator.The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA.Output power at 100mA is more than 10mW.The extinction characteristics,modulation bandwidth,and electrical return loss are measured.3dB bandwidth more than 10GHz is monitored.
基金Project supported by the National Key R&D Program of China(Grant No.2020YFB1805701)the National Natural Foundation of China(Grant Nos.61934003,61635010,and 61674136)Beijing Natural Science Foundation,China(Grant No.4194093)。
文摘We have realized integration of evanescent wave coupled photodetector(ECPD)and multi-quantum well(MQW)semiconductor optical amplifier(SOA)on MOCVD platform by investigating butt-joint regrowth method of thick InP/InGaAsP waveguides to deep etched SOA mesas.The combination of inductively coupled plasma etching and wet chemical etching technique has been studied to define the final mesa shape before regrowth.By comparing the etching profiles of different non-selective etchants,we have obtained a controllable non-reentrant mesa shape with smooth sidewall by applying one step 2 HBr:2 H_(3)PO_(4):K_(2)Cr_(2)O_(7)wet etching.A high growth temperature of 680℃is found helpful to enhance planar regrowth.By comparing the growth morphologies and simulating optical transmission along different directions,we determined that waveguides should travel across the regrowth interface along the[110]direction.The relation between growth rate and mask design has been extensively studied and the result can provide an important guidance for future mask design and vertical alignment between the active and passive cores.ECPD-SOA integrated device has been successfully achieved by this method without further regrowth steps and provided a responsivity of 7.8 A/W.The butt-joint interface insertion loss is estimated to be 1.05 dB/interface.
文摘This paper presents an experimental investigation of laser welding low carbon galvanized steel in butt-joint configurations. The experimental work is focused on the effects of various laser welding parameters on the welds quality. The investigations are based on a structured experimental design using the Taguchi method. Welding experiments are conducted using a 3 kW Nd:YAG laser source. The selected laser welding parameters (laser power, welding speed, laser fiber diameter, gap between sheets and sheet thickness) are combined and used to evaluate the variation of four weld quality attributes (bead width, penetration depth, underfill and hardness) and to identify the possible relationship between welding parameters and weld physical and geometrical attributes. The effects of these parameters are studied using ANOVA to find their contributions to the variation of different weld characteristics. Plots of the main effects and the interaction effects are also used to understand the influence of the welding parameters. The results reveal that all welding parameters are relevant to bead width (BDW) and depth of penetration (DOP) with a relative predominance of laser power and welding speed. The effect of laser fiber diameter on penetration depth is insignificant. Typical gap-dependent weld shapes show that a small gap results in a narrower and deeper weld. Due to the standard sheared edge, an underfill between 5% and 10% occurs for no-gap experiments. The resulting hardness values are relatively similar for all the experimental tests.
文摘The characteristics of thickness enhancement fact or and bandgap wavelength of selectively grown InGaAsP are investigated.A high thi ckness enhancement factor of 2.9 is obtained.Spotsize converter integrated DFB lasers are fabricated by using the technique of SAG.The threshold current is as low as 10.8mA.The output power is 10mW at 60mA without coating and the SMSR is 35.8dB.The vertical far field angle (FWHM) is decreased from 34° to 9°.The to lerance of 1dBm misalignment is 3.4μm vertically.
基金supported by the National High Technology Research and Development Programof China(No.2006AA03Z427)the State Key Development Programfor Basic Research of China(No.2003CB314903)the National Natural Science Foundation of China(No.60677024)~~
文摘We demonstrate a ridge waveguide sampled-grating distributed-feedback laser with quasi-continuous wavelength coverage over a 35nm range. The design is based on a 320nm-thick butt jointed passive waveguide optimized for carrier injection tuning. The butt-joint technology enable optimize the passive waveguide as well as active section. By tuning mirror sections,the laser provides 35nm tuning while maintaining 〉30dB sidemode suppression ratio.
