Nanocomposite dielectrics show great promising application in developing next generation wearable all-solidstate cooling devices owing to the possessed advantages of high cooling efficiency, light-weight and small vol...Nanocomposite dielectrics show great promising application in developing next generation wearable all-solidstate cooling devices owing to the possessed advantages of high cooling efficiency, light-weight and small volume without the induced greenhouse effect or serious harm to ozone layer in the exploited refrigerants. However, low electrocaloric strength in nanocomposite dielectric is severely restricting its wide-spread application because of high applied operating voltage to improve electrocaloric effect. After addressing the chosen optimized ferroelectric ceramic and ferroelectric polymer matrix in conjunction with the analysis of crucial parameters, recent progress of electrocaloric effect(ECE) in polymer nanocomposites has been considerably reviewed. Subsequently, prior to proposing the conceptual design and devices/systems in electrocaloric nanocomposites, the existing developed devices/systems are reviewed. Finally, conclusions and prospects are conducted, including the aspects of materials chosen, structural design and key issues to be considered in improving electrocaloric effect of polymer nanocomposite dielectrics for flexible solidstate cooling devices.展开更多
Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships amon...Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.展开更多
Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation method...Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer （LET） of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device.展开更多
Perovskite optoelectronic devices,capitalizing on the exceptional light-matter interaction and semiconductor properties of perovskite materials,have emerged as transformative platforms for energy conversion,informatio...Perovskite optoelectronic devices,capitalizing on the exceptional light-matter interaction and semiconductor properties of perovskite materials,have emerged as transformative platforms for energy conversion,information storage,and photonic technologies.While material innovations and device engineering breakthroughs have propelled remarkable advancements,persistent challenges in operational stability,scalable manufacturing,and batch reproducibility continue to hinder commercial implementation.Recently,molecular ferroelectrics(MOFEs),as a class of materials characterized by polar crystal structures and switchable spontaneous polarization(P_(s)),offer novel pathways to regulate high-efficiency and stable perovskite optoelectronic devices.Here,we systematically review the application of MOFEs into diverse perovskite optoelectronic systems,emphasizing the synergistic effect between P_(s)and optoelectronic properties.We analyze MOFEs-based photodetectors spanning self-powered,X-ray,and polarized-light detectors,detailing how P_(s)and synergistic physical effects optimize device performance.For photovoltaic applications,we elucidate polarizationdriven performance enhancement mechanisms in perovskite solar cells(PSCs),including built-in field amplification,defect passivation,and stability improvement.Furthermore,we envisage the emerging applications of MOFEs in optoelectronic fields such as non-volatile memory,neuromorphic computing,and optical communication.Overall,this review furnishes valuable insights into optoelectronics and future energy.展开更多
The application of heavy-metal complexes in bulk-heterojunction（BHJ） solar cells is a promising new research field which has attracted increasing attention,due to their strong spin-orbit coupling for efficient singl...The application of heavy-metal complexes in bulk-heterojunction（BHJ） solar cells is a promising new research field which has attracted increasing attention,due to their strong spin-orbit coupling for efficient singlet to triplet intersystem crossing.This review article focuses on recent advances of heavy metal complex containing organic and polymer materials as photovoltaic donors in BHJ solar cells.Platinum-acetylide containing oligomersor and polymers have been firstly illustrated due to the good solubility,square planar structure,as well as the fairly strong Pt-Pt interaction.Then the cyclometalated Pt or Ir complex containing conjugated oligomers and polymers are presented in which the triplet organometallic compounds are embedded into the organic/polymer backbone either through cyclometalated main ligand or the auxiliary ligand.Pure triplet small molecular cyclometalated Ir complex are also briefly introduced.Besides the chemical modification,physical doping of cyclometalated heavy metal complexes as additives into the photovoltaic active layers is finally demonstrated.展开更多
As a versatile and environmentally benign oxidant,hydrogen peroxide(H_(2)O_(2))is highly desired in sanitation,disinfection,environmental remediation,and the chemical industry.Compared with the conventional anthraquin...As a versatile and environmentally benign oxidant,hydrogen peroxide(H_(2)O_(2))is highly desired in sanitation,disinfection,environmental remediation,and the chemical industry.Compared with the conventional anthraquinone process,the electrosynthesis of H_(2)O_(2)through the two-electron oxygen reduction reaction(2e^(−)ORR)is an efficient,competitive,and promising avenue.Electrocatalysts and devices are two core factors in 2e^(−)ORR,but the design principles of catalysts for different pH conditions and the development trends of relevant synthesis devices remain unclear.To this end,this review adopts a multiscale perspective to summarize recent advancements in the design principles,catalytic mechanisms,and application prospects of 2e^(−)ORR catalysts,with a particular focus on the influence of pH conditions,aiming at providing guidance for the selective design of advanced 2e^(−)ORR catalysts for highly-efficient H_(2)O_(2)production.Moreover,in response to diverse on-site application demands,we elaborate on the evolution of H_(2)O_(2)electrosynthesis devices,from rotating ring-disk electrodes and H-type cells to diverse flow-type cells.We elaborate on their characteristics and shortcomings,which can be beneficial for their further upgrades and customized applications.These insights may inspire the rational design of innovative catalysts and devices with high performance and wide serviceability for large-scale implementations.展开更多
A reduction of fuel consumption and an increase in efficiency are currently required for river–sea bulk carriers.Pre-swirl and ducted stators are widely used devices in the industry and efficiency gains can be obtain...A reduction of fuel consumption and an increase in efficiency are currently required for river–sea bulk carriers.Pre-swirl and ducted stators are widely used devices in the industry and efficiency gains can be obtained for single-screw and twin-screw vessels.Based on the hydrodynamic characteristics of the 20,000DWT river–sea bulk carrier,in this study,we proposed,designed,and tested a series of pre-swirl energy-saving devices(ESDs).The experimental results demonstrate that the proposed ESDs improved the propulsive efficiency and reduced the delivered power.The results confirm the success of our ESD for the 20,000DWT river–sea bulk carrier.We validated the role of Reynolds-averaged Navier–Stokes(RANS)computational fluid dynamics(CFD)in the twin-skeg river–sea vessel ESD design and found the circumferential arrangement and number of stators to be important factors in the design process.展开更多
The radiation effects of the metal-oxide-semiconductor （MOS） and the bipolar devices are characterised using 8 MeV protons, 60 MeV Br ions and 1 MeV electrons. Key parameters are measured in-situ and compared for th...The radiation effects of the metal-oxide-semiconductor （MOS） and the bipolar devices are characterised using 8 MeV protons, 60 MeV Br ions and 1 MeV electrons. Key parameters are measured in-situ and compared for the devices. The ionising and nonionising energy losses of incident particles are calculated using the Geant4 and the stopping and range of ions in matter code. The results of the experiment and energy loss calculation for different particles show that different incident particles may give different contributions to MOS and bipolar devices. The irradiation particles, which cause a larger displacement dose within the same chip depth of bipolar devices at a given total dose, would generate more severe damage to the voltage parameters of the bipolar devices. On the contrary, the irradiation particles, which cause larger ionising damage in the gate oxide, would generate more severe damage to MOS devices. In this investigation, we attempt to analyse the sensitivity to radiation damage of the different parameter of the MOS and bipolar devices by comparing the irradiation experimental data and the calculated results using Geant4 and SRIM code.展开更多
We investigate the effect of the formation process under pulse and dc modes on the performance of one transistor and one resistor （1 T1R） resistance random access memory （RRAM） device. All the devices are operated...We investigate the effect of the formation process under pulse and dc modes on the performance of one transistor and one resistor （1 T1R） resistance random access memory （RRAM） device. All the devices are operated under the same test conditions, except for the initial formation process with different modes. Based on the statistical results, the high resistance state （FIRS） under the dc forming mode shows a lower value with better distribution compared with that under the pulse mode. One of the possible reasons for such a phenomenon originates from different properties of conductive filament （CF） formed in the resistive switching layer under two different modes. For the dc forming mode, the formed filament is thought to be continuous, which is hard to be ruptured, resulting in a lower HRS. However, in the case of pulse forming, the filament is discontinuous where the transport mechanism is governed by hopping. The low resistance state （LRS） can be easily changed by removing a few trapping states from the conducting path. Hence, a higher FIRS is thus observed. However, the HRS resistance is highly dependent on the length of the gap opened. A slight variation of the gap length will cause wide dispersion of resistance.展开更多
In order to realize tobacco curing with energy saving and emission reduc- ing and lower cost, the waste heat recovering equipment was designed and built on blowing-upward type bulk curing barn. The comparative experim...In order to realize tobacco curing with energy saving and emission reduc- ing and lower cost, the waste heat recovering equipment was designed and built on blowing-upward type bulk curing barn. The comparative experiment of tobacco leaf curing was conducted between a bulk curing barn with waste heat of flue gas and conventional bulk curing barn. The results showed that the effect of saving coal in bulk curing barn with waste heat of flue gas was obvious than the contrast. The coal consumption quantity was 1.531 kg per kg of dry tobacco leaf. The saving coal in bulk curing barn with use waste heat of flue gas was 0.181 kg per kg of dry tobacco leaf than the contrast and saving coal rate was 10.57%. The electricity consumption quantity was 0.593 kWh per kg of dry tobacco leaf. The saving elec- tricity quantity in bulk curing barn with use waste heat of flue gas was 0.022 kWh/kg and the saving electricity rate was 3.58% than the contrast. The saving curing cost was 0.158 yuan per kg of dry tobacco leaf and saving cost rate 9.09% in bulk cur- ing barn with use waste heat of flue gas than the contrast. The appearance quality, grade structure and primary chemical composition had no significant difference be- tween bulk curing barn with use waste heat of flue gas and the contrast.展开更多
The investigation on Curie temperature and magnetocaloric effect of the FeCrMoCBYNi bulk metallic glass(BMG) with different crystallized phases was carried out by XRD,TEM and PPMS. The experimental results show that t...The investigation on Curie temperature and magnetocaloric effect of the FeCrMoCBYNi bulk metallic glass(BMG) with different crystallized phases was carried out by XRD,TEM and PPMS. The experimental results show that the Curie temperature(T_c) of Fe_(45)Cr_(15)Mo_(14)C_(15)B_6 Y_2 Ni_3 BMG with different annealing condition reaches a highest value of 95 K. The value of magnetic entropy change △S_M(T) of Sample 3 reaches a maxima of 0.48 J/(kg·K) at Tc temperature, which result from the interaction among the precipitated phases of(Fe,Cr)_(23)(C,B)_6, Fe_3 Mo_3 C and residual amorphous phase. Based on the experiment results, it can be obtained that the Curie temperature, magnetocaloric effect can reach their optimal value at low temperature, when the content of amorphous phase and precipitated phases type run up to certain value. The magnetic properties of Sample 1 with full amorphous phase and Sample 4 with full crystalline phase will both decrease.展开更多
A two-dimensional （2D） full band self-consistent ensemble Monte Carlo （MC） method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to exten...A two-dimensional （2D） full band self-consistent ensemble Monte Carlo （MC） method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical （QM） effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.展开更多
Bulking characteristics of gangue are of great significance for the stability of goafs in mining overburden in the caving zones.In this paper,a particle discrete element method with clusters to represent gangue was ad...Bulking characteristics of gangue are of great significance for the stability of goafs in mining overburden in the caving zones.In this paper,a particle discrete element method with clusters to represent gangue was adopted to explore the bulking coefficient time effect of the broken rock in the caving zone under three-dimensional triaxial compression condition.The phenomena of stress corrosion,deformation,and failure of rock blocks were simulated in the numerical model.Meanwhile,a new criterion of rock fragments damage was put forward.It was found that the broken rock has obvious viscoelastic properties.A new equation based on the Burgers creep model was proposed to predict the bulking coefficient of broken rock.A deformation characteristic parameter of the prediction equation was analyzed,which can be set as a fixed value in the mid-and long-term prediction of the bulking coefficient.There are quadratic function relationships between the deformation characteristic parameter value and Talbot gradation index,axial pressure and confining pressure.展开更多
Ultrasonic vibration-assisted grinding(UVAG)is an effective and promising method for machining of hard-to-cut materials.This article proposed an ultrasonic vibration plate device enabling the longitudinal full-wave an...Ultrasonic vibration-assisted grinding(UVAG)is an effective and promising method for machining of hard-to-cut materials.This article proposed an ultrasonic vibration plate device enabling the longitudinal full-wave and transverse half-wave(L2T1)vibration mode for UVAG.The characteristics of two-dimensional coupled vibration in different directions were analyzed on the basis of apparent elastic method and finite element method.Furthermore,a correction factor was applied to correct the frequency error caused by the apparent elastic method.Finally,the comparative experiments between the conventional creep-feed grinding and UVAG of Inconel 718 nickel-based superalloy were carried out.The results indicate that the apparent elastic method with the correction factor is accurate for the design of plate device under the L2T1 vibration mode.Compared with the conventional creep-feed grinding,the UVAG causes the reduction of grinding force and the improvement of machined surface quality of Inconel 718 nickel-based superalloy.Furthermore,under the current experimental conditions,the optimal ultrasonic vibration amplitude is determined as 6μm,with which the minimum surface roughness is achieved.展开更多
We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then ...We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is completed.The surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion concentration.We will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.展开更多
We have performed a full numerical calculation of the Franz-Keldysh （FK） effect on magnetoexcitons in a bulk GaAs semiconductor. By employing an initial wlue method in combination with the application of a perfect m...We have performed a full numerical calculation of the Franz-Keldysh （FK） effect on magnetoexcitons in a bulk GaAs semiconductor. By employing an initial wlue method in combination with the application of a perfect matched layer, the numerical effort and storage size are dramatically reduced due to a significant reduction in both computed domain and number of base functions. In the absence of an electric field, the higher magnetoexcitonic peaks show distinct Fano lineshape due to the degeneracy with continuum states of the lower Landau levels. The magnetoexcitons that belong to the zeroth Landau level remain in bound states and lead to Lorentzian lineshape, because they are not degenerated with continuum states. In the presence of an electric field, the FK effect on each magnetoexcitonic resonance can be identified for high magnetic fields. However, for low magnetic fields, the FK oscillations dominate the spectrum structure in the vicinity of the bandgap edge and the magnetoexcitonic resonances dominate the spectrum structure of higher energies. In the moderate electric fields, the interplay of FK effect and magnetoexcitonic resonance leads to a complex and rich structure in the absorption spectrum.展开更多
Classical micromechanical methods for calculating the effective moduli of a heteroge- neous material are generalized to include the interface(surface)effect.By using Hashin's Composite Sphere Assemblage(CSA)model,...Classical micromechanical methods for calculating the effective moduli of a heteroge- neous material are generalized to include the interface(surface)effect.By using Hashin's Composite Sphere Assemblage(CSA)model,a new expression of the bulk modulus for a particle-reinforced com- posite is derived.It is emphasized that the present study is within the finite-deformation framework such that the effective properties are not influenced by the interface stress itself solely,but influenced by the change of the interface stress due to changes of the shape and size of the interface.Hence some inadequacies in previous papers are pointed out.展开更多
Thermal transport in a highly porous metallic wire-woven bulk Kagome （WBK） is numerically and analytically modeled. Based on topology similarity and upon introducing an elongation parameter in thermal tortuosity, an...Thermal transport in a highly porous metallic wire-woven bulk Kagome （WBK） is numerically and analytically modeled. Based on topology similarity and upon introducing an elongation parameter in thermal tortuosity, an idealized Kagome with non-twisted struts is employed. Special focus is placed upon quanti- fying the effect of topological anisotropy of WBK upon its effective conductivity. It is demonstrated that the effective conductivity reduces linearly as the poros- ity increases, and the extent of the reduction is significantly dependent on the orientation of WBK. The governing physical mechanism of anisotropic thermal transport in WBK is found to be the anisotropic thermal tortuosity caused by the intrinsic anisotropic topology of WBK.展开更多
Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradi...Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal.展开更多
The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential vale...The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential valence and conduction band tail states is used to simulate the photovoltaic cell. The simulation result shows that the open circuit voltage depends Iinearly on the logarithm of the generation rate and the slope depends on the width of the valence band tail. The open circuit voltage decreases with the increasing width of the band tail. The dark and light ideality factors increase with the width of the valence band tail.展开更多
基金Project(202045007) supported by the Start-up Funds for Outstanding Talents in Central South University,China。
文摘Nanocomposite dielectrics show great promising application in developing next generation wearable all-solidstate cooling devices owing to the possessed advantages of high cooling efficiency, light-weight and small volume without the induced greenhouse effect or serious harm to ozone layer in the exploited refrigerants. However, low electrocaloric strength in nanocomposite dielectric is severely restricting its wide-spread application because of high applied operating voltage to improve electrocaloric effect. After addressing the chosen optimized ferroelectric ceramic and ferroelectric polymer matrix in conjunction with the analysis of crucial parameters, recent progress of electrocaloric effect(ECE) in polymer nanocomposites has been considerably reviewed. Subsequently, prior to proposing the conceptual design and devices/systems in electrocaloric nanocomposites, the existing developed devices/systems are reviewed. Finally, conclusions and prospects are conducted, including the aspects of materials chosen, structural design and key issues to be considered in improving electrocaloric effect of polymer nanocomposite dielectrics for flexible solidstate cooling devices.
文摘Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1532261,11690041,and 11675233)
文摘Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer （LET） of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device.
基金financially supported by the National Natural Science Foundation of China(No.52302229)the State Key Laboratory of Photovoltaic Science and Technology of China(No.202401030301)the Key Lab of Modern Optical Technologies of Education Ministry of China,Soochow University(No.KJS2425)。
文摘Perovskite optoelectronic devices,capitalizing on the exceptional light-matter interaction and semiconductor properties of perovskite materials,have emerged as transformative platforms for energy conversion,information storage,and photonic technologies.While material innovations and device engineering breakthroughs have propelled remarkable advancements,persistent challenges in operational stability,scalable manufacturing,and batch reproducibility continue to hinder commercial implementation.Recently,molecular ferroelectrics(MOFEs),as a class of materials characterized by polar crystal structures and switchable spontaneous polarization(P_(s)),offer novel pathways to regulate high-efficiency and stable perovskite optoelectronic devices.Here,we systematically review the application of MOFEs into diverse perovskite optoelectronic systems,emphasizing the synergistic effect between P_(s)and optoelectronic properties.We analyze MOFEs-based photodetectors spanning self-powered,X-ray,and polarized-light detectors,detailing how P_(s)and synergistic physical effects optimize device performance.For photovoltaic applications,we elucidate polarizationdriven performance enhancement mechanisms in perovskite solar cells(PSCs),including built-in field amplification,defect passivation,and stability improvement.Furthermore,we envisage the emerging applications of MOFEs in optoelectronic fields such as non-volatile memory,neuromorphic computing,and optical communication.Overall,this review furnishes valuable insights into optoelectronics and future energy.
基金The Agro-Industry R and D Special Fund of China(973 Program,No.2015CB932200)the National Natural Science Foundation of China(No.21304047)+2 种基金NSF of Jiangsu Province(No.13KJB430017)Research Fund for the Doctoral Programof Higher Education(No.20133221120015)Synergetic Innovation Center for Organic Electronics and Information Displays for financial support
文摘The application of heavy-metal complexes in bulk-heterojunction（BHJ） solar cells is a promising new research field which has attracted increasing attention,due to their strong spin-orbit coupling for efficient singlet to triplet intersystem crossing.This review article focuses on recent advances of heavy metal complex containing organic and polymer materials as photovoltaic donors in BHJ solar cells.Platinum-acetylide containing oligomersor and polymers have been firstly illustrated due to the good solubility,square planar structure,as well as the fairly strong Pt-Pt interaction.Then the cyclometalated Pt or Ir complex containing conjugated oligomers and polymers are presented in which the triplet organometallic compounds are embedded into the organic/polymer backbone either through cyclometalated main ligand or the auxiliary ligand.Pure triplet small molecular cyclometalated Ir complex are also briefly introduced.Besides the chemical modification,physical doping of cyclometalated heavy metal complexes as additives into the photovoltaic active layers is finally demonstrated.
基金supported by the National Natural Science Foundation of China(Nos.22102073,22075147).
文摘As a versatile and environmentally benign oxidant,hydrogen peroxide(H_(2)O_(2))is highly desired in sanitation,disinfection,environmental remediation,and the chemical industry.Compared with the conventional anthraquinone process,the electrosynthesis of H_(2)O_(2)through the two-electron oxygen reduction reaction(2e^(−)ORR)is an efficient,competitive,and promising avenue.Electrocatalysts and devices are two core factors in 2e^(−)ORR,but the design principles of catalysts for different pH conditions and the development trends of relevant synthesis devices remain unclear.To this end,this review adopts a multiscale perspective to summarize recent advancements in the design principles,catalytic mechanisms,and application prospects of 2e^(−)ORR catalysts,with a particular focus on the influence of pH conditions,aiming at providing guidance for the selective design of advanced 2e^(−)ORR catalysts for highly-efficient H_(2)O_(2)production.Moreover,in response to diverse on-site application demands,we elaborate on the evolution of H_(2)O_(2)electrosynthesis devices,from rotating ring-disk electrodes and H-type cells to diverse flow-type cells.We elaborate on their characteristics and shortcomings,which can be beneficial for their further upgrades and customized applications.These insights may inspire the rational design of innovative catalysts and devices with high performance and wide serviceability for large-scale implementations.
基金supported by Ministry of Science and Technology of the People’s Republic of China No.2014BAG04B01
文摘A reduction of fuel consumption and an increase in efficiency are currently required for river–sea bulk carriers.Pre-swirl and ducted stators are widely used devices in the industry and efficiency gains can be obtained for single-screw and twin-screw vessels.Based on the hydrodynamic characteristics of the 20,000DWT river–sea bulk carrier,in this study,we proposed,designed,and tested a series of pre-swirl energy-saving devices(ESDs).The experimental results demonstrate that the proposed ESDs improved the propulsive efficiency and reduced the delivered power.The results confirm the success of our ESD for the 20,000DWT river–sea bulk carrier.We validated the role of Reynolds-averaged Navier–Stokes(RANS)computational fluid dynamics(CFD)in the twin-skeg river–sea vessel ESD design and found the circumferential arrangement and number of stators to be important factors in the design process.
基金Project supported by the National Basis Research Program of China (Grant No. 61343)
文摘The radiation effects of the metal-oxide-semiconductor （MOS） and the bipolar devices are characterised using 8 MeV protons, 60 MeV Br ions and 1 MeV electrons. Key parameters are measured in-situ and compared for the devices. The ionising and nonionising energy losses of incident particles are calculated using the Geant4 and the stopping and range of ions in matter code. The results of the experiment and energy loss calculation for different particles show that different incident particles may give different contributions to MOS and bipolar devices. The irradiation particles, which cause a larger displacement dose within the same chip depth of bipolar devices at a given total dose, would generate more severe damage to the voltage parameters of the bipolar devices. On the contrary, the irradiation particles, which cause larger ionising damage in the gate oxide, would generate more severe damage to MOS devices. In this investigation, we attempt to analyse the sensitivity to radiation damage of the different parameter of the MOS and bipolar devices by comparing the irradiation experimental data and the calculated results using Geant4 and SRIM code.
基金Supported by the National Basic Research Program of China under Grant Nos 2011CBA00602,2010CB934200,2011CB921804,2011CB707600,2011AA010401,and 2011AA010402the National Natural Science Foundation of China under Grant Nos61322408,61334007,61376112,61221004,61274091,61106119,61106082,and 61006011
文摘We investigate the effect of the formation process under pulse and dc modes on the performance of one transistor and one resistor （1 T1R） resistance random access memory （RRAM） device. All the devices are operated under the same test conditions, except for the initial formation process with different modes. Based on the statistical results, the high resistance state （FIRS） under the dc forming mode shows a lower value with better distribution compared with that under the pulse mode. One of the possible reasons for such a phenomenon originates from different properties of conductive filament （CF） formed in the resistive switching layer under two different modes. For the dc forming mode, the formed filament is thought to be continuous, which is hard to be ruptured, resulting in a lower HRS. However, in the case of pulse forming, the filament is discontinuous where the transport mechanism is governed by hopping. The low resistance state （LRS） can be easily changed by removing a few trapping states from the conducting path. Hence, a higher FIRS is thus observed. However, the HRS resistance is highly dependent on the length of the gap opened. A slight variation of the gap length will cause wide dispersion of resistance.
基金Supported by Hebei Industrial Co.,LTD.of China Tobacco(111201315524)Qiannan Co.LTD.Of Guizhou Industrial Co.,LTD.,China Tobacco([2012]17)~~
文摘In order to realize tobacco curing with energy saving and emission reduc- ing and lower cost, the waste heat recovering equipment was designed and built on blowing-upward type bulk curing barn. The comparative experiment of tobacco leaf curing was conducted between a bulk curing barn with waste heat of flue gas and conventional bulk curing barn. The results showed that the effect of saving coal in bulk curing barn with waste heat of flue gas was obvious than the contrast. The coal consumption quantity was 1.531 kg per kg of dry tobacco leaf. The saving coal in bulk curing barn with use waste heat of flue gas was 0.181 kg per kg of dry tobacco leaf than the contrast and saving coal rate was 10.57%. The electricity consumption quantity was 0.593 kWh per kg of dry tobacco leaf. The saving elec- tricity quantity in bulk curing barn with use waste heat of flue gas was 0.022 kWh/kg and the saving electricity rate was 3.58% than the contrast. The saving curing cost was 0.158 yuan per kg of dry tobacco leaf and saving cost rate 9.09% in bulk cur- ing barn with use waste heat of flue gas than the contrast. The appearance quality, grade structure and primary chemical composition had no significant difference be- tween bulk curing barn with use waste heat of flue gas and the contrast.
基金supported by the National Natural Science Foundation of China(51741105)
文摘The investigation on Curie temperature and magnetocaloric effect of the FeCrMoCBYNi bulk metallic glass(BMG) with different crystallized phases was carried out by XRD,TEM and PPMS. The experimental results show that the Curie temperature(T_c) of Fe_(45)Cr_(15)Mo_(14)C_(15)B_6 Y_2 Ni_3 BMG with different annealing condition reaches a highest value of 95 K. The value of magnetic entropy change △S_M(T) of Sample 3 reaches a maxima of 0.48 J/(kg·K) at Tc temperature, which result from the interaction among the precipitated phases of(Fe,Cr)_(23)(C,B)_6, Fe_3 Mo_3 C and residual amorphous phase. Based on the experiment results, it can be obtained that the Curie temperature, magnetocaloric effect can reach their optimal value at low temperature, when the content of amorphous phase and precipitated phases type run up to certain value. The magnetic properties of Sample 1 with full amorphous phase and Sample 4 with full crystalline phase will both decrease.
基金Project supported by the Special Foundation for State Major Basic Research Program of China （Grant No G2000035602） and the National Natural Science Foundation of China （Grant No 90307006）.
文摘A two-dimensional （2D） full band self-consistent ensemble Monte Carlo （MC） method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical （QM） effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.
基金This work was supported by the National Natural Science Foundation of China,NSFC(Nos.U1803118 and 51974296)and the China Scholarship Council(CSC)(award to Fanfei Meng for PhD period at Kyushu University).
文摘Bulking characteristics of gangue are of great significance for the stability of goafs in mining overburden in the caving zones.In this paper,a particle discrete element method with clusters to represent gangue was adopted to explore the bulking coefficient time effect of the broken rock in the caving zone under three-dimensional triaxial compression condition.The phenomena of stress corrosion,deformation,and failure of rock blocks were simulated in the numerical model.Meanwhile,a new criterion of rock fragments damage was put forward.It was found that the broken rock has obvious viscoelastic properties.A new equation based on the Burgers creep model was proposed to predict the bulking coefficient of broken rock.A deformation characteristic parameter of the prediction equation was analyzed,which can be set as a fixed value in the mid-and long-term prediction of the bulking coefficient.There are quadratic function relationships between the deformation characteristic parameter value and Talbot gradation index,axial pressure and confining pressure.
基金financially supported by the National Natural Science Foundation of China(Nos.51921003 and 51775275)National Key Laboratory of Science and Technology on Helicopter Transmission(Nanjing University of Aeronautics and Astronautics)(No.HTL-A-20G01)Postgraduate Research&Practice Innovation Program of Jiangsu Province(No.KYCX20_0179)。
文摘Ultrasonic vibration-assisted grinding(UVAG)is an effective and promising method for machining of hard-to-cut materials.This article proposed an ultrasonic vibration plate device enabling the longitudinal full-wave and transverse half-wave(L2T1)vibration mode for UVAG.The characteristics of two-dimensional coupled vibration in different directions were analyzed on the basis of apparent elastic method and finite element method.Furthermore,a correction factor was applied to correct the frequency error caused by the apparent elastic method.Finally,the comparative experiments between the conventional creep-feed grinding and UVAG of Inconel 718 nickel-based superalloy were carried out.The results indicate that the apparent elastic method with the correction factor is accurate for the design of plate device under the L2T1 vibration mode.Compared with the conventional creep-feed grinding,the UVAG causes the reduction of grinding force and the improvement of machined surface quality of Inconel 718 nickel-based superalloy.Furthermore,under the current experimental conditions,the optimal ultrasonic vibration amplitude is determined as 6μm,with which the minimum surface roughness is achieved.
文摘We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is completed.The surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion concentration.We will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.
基金Project supported by the Major Program of the National Natural Science Foundation of China （Grant No 10390160）, and the National Natural Science Foundation of China （Grant No 30370420）.
文摘We have performed a full numerical calculation of the Franz-Keldysh （FK） effect on magnetoexcitons in a bulk GaAs semiconductor. By employing an initial wlue method in combination with the application of a perfect matched layer, the numerical effort and storage size are dramatically reduced due to a significant reduction in both computed domain and number of base functions. In the absence of an electric field, the higher magnetoexcitonic peaks show distinct Fano lineshape due to the degeneracy with continuum states of the lower Landau levels. The magnetoexcitons that belong to the zeroth Landau level remain in bound states and lead to Lorentzian lineshape, because they are not degenerated with continuum states. In the presence of an electric field, the FK effect on each magnetoexcitonic resonance can be identified for high magnetic fields. However, for low magnetic fields, the FK oscillations dominate the spectrum structure in the vicinity of the bandgap edge and the magnetoexcitonic resonances dominate the spectrum structure of higher energies. In the moderate electric fields, the interplay of FK effect and magnetoexcitonic resonance leads to a complex and rich structure in the absorption spectrum.
基金The project supported by the National Natural Science Foundation of China(10032010,10372004)Shanghai Leading Academic Discipline
文摘Classical micromechanical methods for calculating the effective moduli of a heteroge- neous material are generalized to include the interface(surface)effect.By using Hashin's Composite Sphere Assemblage(CSA)model,a new expression of the bulk modulus for a particle-reinforced com- posite is derived.It is emphasized that the present study is within the finite-deformation framework such that the effective properties are not influenced by the interface stress itself solely,but influenced by the change of the interface stress due to changes of the shape and size of the interface.Hence some inadequacies in previous papers are pointed out.
基金supported by the National 111 Project of China(B06024)the National Basic Research Program of China(2011CB610305)
文摘Thermal transport in a highly porous metallic wire-woven bulk Kagome （WBK） is numerically and analytically modeled. Based on topology similarity and upon introducing an elongation parameter in thermal tortuosity, an idealized Kagome with non-twisted struts is employed. Special focus is placed upon quanti- fying the effect of topological anisotropy of WBK upon its effective conductivity. It is demonstrated that the effective conductivity reduces linearly as the poros- ity increases, and the extent of the reduction is significantly dependent on the orientation of WBK. The governing physical mechanism of anisotropic thermal transport in WBK is found to be the anisotropic thermal tortuosity caused by the intrinsic anisotropic topology of WBK.
基金Project supported by the Foundation of State Key Laboratory of China(Grant Nos.SKLIPR1903Z,1803)the National Natural Science Foundation of China(Grant Nos.U2167208 and 11875223).
文摘Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal.
文摘The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential valence and conduction band tail states is used to simulate the photovoltaic cell. The simulation result shows that the open circuit voltage depends Iinearly on the logarithm of the generation rate and the slope depends on the width of the valence band tail. The open circuit voltage decreases with the increasing width of the band tail. The dark and light ideality factors increase with the width of the valence band tail.
