We present the growth of CaN epilayer on Si （111） substrate with a single A1GaN interlayer sandwiched between the GaN epilayer and A1N buffer layer by using the metalorganic chemical vapour deposition. The influence...We present the growth of CaN epilayer on Si （111） substrate with a single A1GaN interlayer sandwiched between the GaN epilayer and A1N buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an A1N buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.展开更多
Organic solar cells with inverted planar heterojunction structure based on subphthalocya- nine and C60 were fabricated using several kinds of materials as cathode buffer layer （CBL）, including tris-8-hydroxy-quinoli...Organic solar cells with inverted planar heterojunction structure based on subphthalocya- nine and C60 were fabricated using several kinds of materials as cathode buffer layer （CBL）, including tris-8-hydroxy-quinolinato aluminum （Alq3）, bathophenanthroline （Bphen）, bathocuproine, 2,3,8,9,14,15-hexakis-dodecyl-sulfanyl-5,6,11,12,17,18-hexaazatrinaphthylene （HATNA）, and an inorganic compound of Cs2CO3. The influence of the lowest unoccupied molecular orbital level and the electron mobility of organic CBL on the solar cells perfor- mance was compared. The results showed that Alq3, Bphen, and HATNA could significantly improve the device performance. The highest efficiency was obtained from device with an- nealed HATNA as CBL and increased for more than 7 times compared with device without CBL. Furthermore~ the simulation results with space charge-limited current theory indicated that the Schottky barrier at the organic/electrode interface in inverted OSC structure was reduced for 27% by inserting HATNA CBL.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001,60476021,60576003,60776047and 60836003)the National Basic Research Program of China (Grant No. 2007CB936700)the Project of Technological Research and Development of Hebei Province,China (Grant No. 07215134)
文摘We present the growth of CaN epilayer on Si （111） substrate with a single A1GaN interlayer sandwiched between the GaN epilayer and A1N buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an A1N buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.
文摘Organic solar cells with inverted planar heterojunction structure based on subphthalocya- nine and C60 were fabricated using several kinds of materials as cathode buffer layer （CBL）, including tris-8-hydroxy-quinolinato aluminum （Alq3）, bathophenanthroline （Bphen）, bathocuproine, 2,3,8,9,14,15-hexakis-dodecyl-sulfanyl-5,6,11,12,17,18-hexaazatrinaphthylene （HATNA）, and an inorganic compound of Cs2CO3. The influence of the lowest unoccupied molecular orbital level and the electron mobility of organic CBL on the solar cells perfor- mance was compared. The results showed that Alq3, Bphen, and HATNA could significantly improve the device performance. The highest efficiency was obtained from device with an- nealed HATNA as CBL and increased for more than 7 times compared with device without CBL. Furthermore~ the simulation results with space charge-limited current theory indicated that the Schottky barrier at the organic/electrode interface in inverted OSC structure was reduced for 27% by inserting HATNA CBL.
