A novel planar vertical double-diffused metal-oxide-semiconductor （VDMOS） structure with an ultra-low specific on-resistance （Ron,sp）, whose distinctive feature is the use of inhomogeneous floating p-islands in th...A novel planar vertical double-diffused metal-oxide-semiconductor （VDMOS） structure with an ultra-low specific on-resistance （Ron,sp）, whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its Ron,sp is deduced, the influence of structure parameters on the breakdown voltage （BV） and Ron,sp are investigated, and the optimized results with BV of 83 V and Ron,sp of 54 mΩ.mm2 are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor （MOSFET） has a superior ＂Ron,sp/BV＂ trade-off to the conventional VDMOS （a 38% reduction of Ron,sp with the same BV） and the homogeneous-floating-islands MOSFET （a 10% reduction of Ron,sp with the same BV）. The inhomogeneous-floatingislands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively.展开更多
The various configurations of multilevel inverter involve the use of more numbers of switching devices, energy storage devices and/or unidirectional devices. Each switching unit necessitates the add-on driver circuit ...The various configurations of multilevel inverter involve the use of more numbers of switching devices, energy storage devices and/or unidirectional devices. Each switching unit necessitates the add-on driver circuit for proper functionality. Cascaded H-Bridge Multilevel Inverter requires overlapped switching pulses for the switching devices in positive and negative arms of the bridge which may lead to short circuit during the device failure. This work addresses the problems in different configurations of multilevel inverter by using reduced number of switching and energy storage devices and driver circuits. In the present approach Single Switch is used for each stair case positive output and single H-Bridge for phase reversal. Driver circuits are reduced by using the property of body diode of the MOSFET. Switching pulses are generated by Arduino Development Board. The circuit is simulated using Matlab. More so, through experimental means, it is physically tested and results are analyzed for the 5-step inverter and thereby simulation is fully validated. Consequently, cycloconverter operation of the circuit is simulated using Matlab. Moreover, half bridge configuration of the multilevel inverter is also analyzed for high frequency induction heating applications.展开更多
The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) de...The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency( fT), maximum frequency of oscillation( fmax), etc. Because of the lack of a back gate conducting channel, the drain conductance(gd) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance(gm) of TDBC is almost independent of back gate bias. The values of fT of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ～ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance.展开更多
Although the dead-time optimization design of resonant converters has been widely researched,classical design methods focus more on achieving zero-voltage switching(ZVS)operation.The body diode loss is always ignored,...Although the dead-time optimization design of resonant converters has been widely researched,classical design methods focus more on achieving zero-voltage switching(ZVS)operation.The body diode loss is always ignored,which results in low-efficiency of the converter,especially,in energy router(ER).To deal with this problem,this paper proposes an adaptive deadtime modulation scheme for bidirectional LLC resonant converters in ER.First,the power loss of the MOSFET is analyzed based on the dead-time.Then,a novel dead-time optimization modulation principle is proposed.It can eliminate the body diode loss of MOSFET compared with existing literature.Based on the optimization modulation principle,this paper proposes an adaptive dead-time modulation scheme.To this end,the converter adopting the scheme no longer needs to calculate dead-time,which simplifies the parameter design process.Meanwhile,this scheme enables dead-time to dynamically change with working conditions according to the dead-time optimization modulation principle.With these effects,the ZVS operation is achieved,and the body diode loss of MOSFET is also eliminated.Furthermore,a digital implementation method is designed to make the proposed modulation scheme have fast-transient response.Finally,experimental results show that the proposed dead-time modulation scheme enables converters to achieve ZVS operation in all working conditions,and has higher efficiency than classical dead-time design methods.展开更多
基金Project supported by the National Key Scientific and Technological Project (Grant No. 2011ZX02503-005)the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2010J038)
文摘A novel planar vertical double-diffused metal-oxide-semiconductor （VDMOS） structure with an ultra-low specific on-resistance （Ron,sp）, whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its Ron,sp is deduced, the influence of structure parameters on the breakdown voltage （BV） and Ron,sp are investigated, and the optimized results with BV of 83 V and Ron,sp of 54 mΩ.mm2 are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor （MOSFET） has a superior ＂Ron,sp/BV＂ trade-off to the conventional VDMOS （a 38% reduction of Ron,sp with the same BV） and the homogeneous-floating-islands MOSFET （a 10% reduction of Ron,sp with the same BV）. The inhomogeneous-floatingislands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively.
文摘The various configurations of multilevel inverter involve the use of more numbers of switching devices, energy storage devices and/or unidirectional devices. Each switching unit necessitates the add-on driver circuit for proper functionality. Cascaded H-Bridge Multilevel Inverter requires overlapped switching pulses for the switching devices in positive and negative arms of the bridge which may lead to short circuit during the device failure. This work addresses the problems in different configurations of multilevel inverter by using reduced number of switching and energy storage devices and driver circuits. In the present approach Single Switch is used for each stair case positive output and single H-Bridge for phase reversal. Driver circuits are reduced by using the property of body diode of the MOSFET. Switching pulses are generated by Arduino Development Board. The circuit is simulated using Matlab. More so, through experimental means, it is physically tested and results are analyzed for the 5-step inverter and thereby simulation is fully validated. Consequently, cycloconverter operation of the circuit is simulated using Matlab. Moreover, half bridge configuration of the multilevel inverter is also analyzed for high frequency induction heating applications.
文摘The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency( fT), maximum frequency of oscillation( fmax), etc. Because of the lack of a back gate conducting channel, the drain conductance(gd) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance(gm) of TDBC is almost independent of back gate bias. The values of fT of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ～ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance.
文摘Although the dead-time optimization design of resonant converters has been widely researched,classical design methods focus more on achieving zero-voltage switching(ZVS)operation.The body diode loss is always ignored,which results in low-efficiency of the converter,especially,in energy router(ER).To deal with this problem,this paper proposes an adaptive deadtime modulation scheme for bidirectional LLC resonant converters in ER.First,the power loss of the MOSFET is analyzed based on the dead-time.Then,a novel dead-time optimization modulation principle is proposed.It can eliminate the body diode loss of MOSFET compared with existing literature.Based on the optimization modulation principle,this paper proposes an adaptive dead-time modulation scheme.To this end,the converter adopting the scheme no longer needs to calculate dead-time,which simplifies the parameter design process.Meanwhile,this scheme enables dead-time to dynamically change with working conditions according to the dead-time optimization modulation principle.With these effects,the ZVS operation is achieved,and the body diode loss of MOSFET is also eliminated.Furthermore,a digital implementation method is designed to make the proposed modulation scheme have fast-transient response.Finally,experimental results show that the proposed dead-time modulation scheme enables converters to achieve ZVS operation in all working conditions,and has higher efficiency than classical dead-time design methods.
