A new 11 T SRAM cell with write-assist is proposed to improve operation at low supply voltage. In this technique, a negative bit-line voltage is applied to one of the write bit-lines, while a boosted voltage is applie...A new 11 T SRAM cell with write-assist is proposed to improve operation at low supply voltage. In this technique, a negative bit-line voltage is applied to one of the write bit-lines, while a boosted voltage is applied to the other write bit-line where transmission gate access is used in proposed 11 T cell. Supply voltage to one of the inverters is interrupted to weaken the feedback. Improved write feature is attributed to strengthened write access devices and weakened feedback loop of cell at the same time. Amount of boosting required for write performance improvement is also reduced due to feedback weakening, solving the persistent problem of half-selected cells and reliability reduction of access devices with the other suggested boosted and negative bit-line techniques. The proposed design improves write time by 79%, 63% and slower by 52% with respect to LP 10 T, WRE 8 T and 6 T cells respectively. It is found that write margin for the proposed cell is improved by about 4×, 2.4× and 5.37× compared to WRE8 T, LP10 T and 6 T respectively. The proposed cell with boosted negative bit line（BNBL） provides47%, 31%, and 68.4% improvement in write margin with respect to no write-assist, negative bit line（NBL） and boosted bit line（BBL） write-assist respectively. Also, new sensing circuit with replica bit-line is proposed to give a more precise timing of applying boosted voltages for improved results. All simulations are done on TSMC 45 nm CMOS technology.展开更多
A multi-stage dual replica bit-line delay （MDRBD） technique is proposed for reducing access time by suppressing the sense-amplifier enable （SAE） timing variation of low voltage static randomaccess memory （SRAM） ...A multi-stage dual replica bit-line delay （MDRBD） technique is proposed for reducing access time by suppressing the sense-amplifier enable （SAE） timing variation of low voltage static randomaccess memory （SRAM） applications. Compared with the traditional technique, this strategy, using statistical theory, reduces the timing variation by using multi-stage ideas, meanwhile doubling the replica bit-fine （RBL） capacitance and discharge path simultaneously in each stage. At a supply voltage of 0.6 V, the simulation results show that the standard deviations of the SAE timing and cycle time with the proposed technique are 69.2% and 47.2%, respectively, smaller than that with a conventional RBL delay technique in TSMC 65 nm CMOS technology （Taiwan Semiconductor Manufacturing Company, Taiwan）.展开更多
我们在异步FIFO(First In First Out)设计中,引入了门控时钟技术降低了控制电路和译码电路80%的功耗;并采用位线分割技术降低了存储单元38%的功耗.利用格雷码作异步FIFO指针的控制电路,能有效消除多时钟域中的亚稳态.基于CSMC0.6μm标...我们在异步FIFO(First In First Out)设计中,引入了门控时钟技术降低了控制电路和译码电路80%的功耗;并采用位线分割技术降低了存储单元38%的功耗.利用格雷码作异步FIFO指针的控制电路,能有效消除多时钟域中的亚稳态.基于CSMC0.6μm标准单元库的半定制设计流程对其进行设计和实现:使用Verilog硬件描述语言,利用Modelsim进行时序和功能仿真、Synopsys DC完成逻辑综合、SE实现自动布局布线.展开更多
文摘A new 11 T SRAM cell with write-assist is proposed to improve operation at low supply voltage. In this technique, a negative bit-line voltage is applied to one of the write bit-lines, while a boosted voltage is applied to the other write bit-line where transmission gate access is used in proposed 11 T cell. Supply voltage to one of the inverters is interrupted to weaken the feedback. Improved write feature is attributed to strengthened write access devices and weakened feedback loop of cell at the same time. Amount of boosting required for write performance improvement is also reduced due to feedback weakening, solving the persistent problem of half-selected cells and reliability reduction of access devices with the other suggested boosted and negative bit-line techniques. The proposed design improves write time by 79%, 63% and slower by 52% with respect to LP 10 T, WRE 8 T and 6 T cells respectively. It is found that write margin for the proposed cell is improved by about 4×, 2.4× and 5.37× compared to WRE8 T, LP10 T and 6 T respectively. The proposed cell with boosted negative bit line（BNBL） provides47%, 31%, and 68.4% improvement in write margin with respect to no write-assist, negative bit line（NBL） and boosted bit line（BBL） write-assist respectively. Also, new sensing circuit with replica bit-line is proposed to give a more precise timing of applying boosted voltages for improved results. All simulations are done on TSMC 45 nm CMOS technology.
基金Project supported by the National Natural Science Foundation of China （No. 61474001）
文摘A multi-stage dual replica bit-line delay （MDRBD） technique is proposed for reducing access time by suppressing the sense-amplifier enable （SAE） timing variation of low voltage static randomaccess memory （SRAM） applications. Compared with the traditional technique, this strategy, using statistical theory, reduces the timing variation by using multi-stage ideas, meanwhile doubling the replica bit-fine （RBL） capacitance and discharge path simultaneously in each stage. At a supply voltage of 0.6 V, the simulation results show that the standard deviations of the SAE timing and cycle time with the proposed technique are 69.2% and 47.2%, respectively, smaller than that with a conventional RBL delay technique in TSMC 65 nm CMOS technology （Taiwan Semiconductor Manufacturing Company, Taiwan）.
文摘我们在异步FIFO(First In First Out)设计中,引入了门控时钟技术降低了控制电路和译码电路80%的功耗;并采用位线分割技术降低了存储单元38%的功耗.利用格雷码作异步FIFO指针的控制电路,能有效消除多时钟域中的亚稳态.基于CSMC0.6μm标准单元库的半定制设计流程对其进行设计和实现:使用Verilog硬件描述语言,利用Modelsim进行时序和功能仿真、Synopsys DC完成逻辑综合、SE实现自动布局布线.
