Sodium(Na)metal batteries with a high volumetric energy density that can be operated at high rates are highly desirable.However,an uneven Na-ion migration in bulk Na anodes leads to localized deposition/dissolution of...Sodium(Na)metal batteries with a high volumetric energy density that can be operated at high rates are highly desirable.However,an uneven Na-ion migration in bulk Na anodes leads to localized deposition/dissolution of sodium during high-rate plating/stripping behaviors,followed by severe dendrite growth and loose stacking.Herein,we engineer the Na hybrid anode with sodiophilic Na_(3)Bi-penetration to develop the abundant phase-boundary ionic transport channels.Compared to intrinsic Na,the reduced adsorption energy and ion-diffusion barrier on Na_(3)Bi ensure even Na^(+)nucleation and rapid Na^(+)migration within the hybrid electrode,leading to uniform deposition and dissolution at high current densities.Furthermore,the bismuthide enables compact Na deposition within the sodiophilic framework during cycling,thus favoring a high volumetric capacity.Consequently,the obtained anode was endowed with a high current density(up to 5 mA∙cm^(−2)),high areal capacity(up to 5 mA∙h∙cm^(−2)),and long-term cycling stability(up to 2800 h at 2 mA∙cm^(−2)).展开更多
Stoichiometric pure and tellurium （Te） doped indium bismuthide （InBi） were grown using the directional freezing technique in a fabricated furnace. The X-ray diffraction profiles identified the crystallinity and ph...Stoichiometric pure and tellurium （Te） doped indium bismuthide （InBi） were grown using the directional freezing technique in a fabricated furnace. The X-ray diffraction profiles identified the crystallinity and phase composition. The surface topographical features were observed by scanning electron microscopy and atomic force microscopy. The energy dispersive analysis by X-rays was performed to identify the atomic proportion of elements. Studies on the temperature dependence of dielectric constant （e）, loss tangent （tan6）, and AC conductivity （cry） reveal the existence of a ferroelectric phase transition in the doped material at 403 K. When InBi is doped with tellurium （4.04 at%）, a band gap of 0.20 eV can be achieved, and this is confirmed using Fourier transform infrared studies. The results thus show the conversion of semimetallic InBi to a semiconductor with the optical properties suitable for use in infrared detectors.展开更多
基金supported by the National Natural Science Foundation of China (21938005 and 21776197)Key Laboratory of Coal Science and Technology, Education Ministry and Shanxi Province, Taiyuan University of Technology
文摘Sodium(Na)metal batteries with a high volumetric energy density that can be operated at high rates are highly desirable.However,an uneven Na-ion migration in bulk Na anodes leads to localized deposition/dissolution of sodium during high-rate plating/stripping behaviors,followed by severe dendrite growth and loose stacking.Herein,we engineer the Na hybrid anode with sodiophilic Na_(3)Bi-penetration to develop the abundant phase-boundary ionic transport channels.Compared to intrinsic Na,the reduced adsorption energy and ion-diffusion barrier on Na_(3)Bi ensure even Na^(+)nucleation and rapid Na^(+)migration within the hybrid electrode,leading to uniform deposition and dissolution at high current densities.Furthermore,the bismuthide enables compact Na deposition within the sodiophilic framework during cycling,thus favoring a high volumetric capacity.Consequently,the obtained anode was endowed with a high current density(up to 5 mA∙cm^(−2)),high areal capacity(up to 5 mA∙h∙cm^(−2)),and long-term cycling stability(up to 2800 h at 2 mA∙cm^(−2)).
文摘Stoichiometric pure and tellurium （Te） doped indium bismuthide （InBi） were grown using the directional freezing technique in a fabricated furnace. The X-ray diffraction profiles identified the crystallinity and phase composition. The surface topographical features were observed by scanning electron microscopy and atomic force microscopy. The energy dispersive analysis by X-rays was performed to identify the atomic proportion of elements. Studies on the temperature dependence of dielectric constant （e）, loss tangent （tan6）, and AC conductivity （cry） reveal the existence of a ferroelectric phase transition in the doped material at 403 K. When InBi is doped with tellurium （4.04 at%）, a band gap of 0.20 eV can be achieved, and this is confirmed using Fourier transform infrared studies. The results thus show the conversion of semimetallic InBi to a semiconductor with the optical properties suitable for use in infrared detectors.
