As the core component of ferroelectric memories,HfO_(2)-based ferroelectric thin films play a crucial role in achieving their excellent storage performance.Here,we improved the ferroelectric properties and domain swit...As the core component of ferroelectric memories,HfO_(2)-based ferroelectric thin films play a crucial role in achieving their excellent storage performance.Here,we improved the ferroelectric properties and domain switching properties through in situ stress loading during annealing.The thin films are annealed under different bending states by applying different stress actions,and it is observed that,within a certain range of stress bending,the optimization of the ferroelectric properties of the annealed thin films can reach an extreme value.Specifically,under the influence of a small electric field,the 2Pr values of thin films annealed at+10 and-10 mm increased by 87.1%and 71.1%,respectively,compared with the unbent films.Additionally,these thin films exhibit extremely high domain wall mobility and excellent domain switching capabilities.Once the ferroelectric phase is formed through in situ stress modulation,it remains stable even under multiple service environments.展开更多
基金supported by the National Natural Science Foundation of China(Nos.12372331,12072307)the Department of Education Project of Hunan Province,China(No.21B0112)+1 种基金the fund of Innovation Center of Radiation Application(No.KFZC2022020602)the Outstanding Youth Science Foundation of Hunan Province,China(No.2021JJ20041).
文摘As the core component of ferroelectric memories,HfO_(2)-based ferroelectric thin films play a crucial role in achieving their excellent storage performance.Here,we improved the ferroelectric properties and domain switching properties through in situ stress loading during annealing.The thin films are annealed under different bending states by applying different stress actions,and it is observed that,within a certain range of stress bending,the optimization of the ferroelectric properties of the annealed thin films can reach an extreme value.Specifically,under the influence of a small electric field,the 2Pr values of thin films annealed at+10 and-10 mm increased by 87.1%and 71.1%,respectively,compared with the unbent films.Additionally,these thin films exhibit extremely high domain wall mobility and excellent domain switching capabilities.Once the ferroelectric phase is formed through in situ stress modulation,it remains stable even under multiple service environments.
