In this paper, we demonstrate the low-power functionality of silicon nanowire （SiNW）-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with ...In this paper, we demonstrate the low-power functionality of silicon nanowire （SiNW）-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching （or standby） power consumption of -0.2 nW （or -6.6 pW）. The low-power inverting operation with a voltage gain of -18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and -0.39 V and low subthreshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties.展开更多
In this paper, we propose a novel construction of silicon nanowire （SiNW） negative-AND （NAND） logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiN...In this paper, we propose a novel construction of silicon nanowire （SiNW） negative-AND （NAND） logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high Ion/off ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties.展开更多
文摘In this paper, we demonstrate the low-power functionality of silicon nanowire （SiNW）-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching （or standby） power consumption of -0.2 nW （or -6.6 pW）. The low-power inverting operation with a voltage gain of -18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and -0.39 V and low subthreshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties.
文摘In this paper, we propose a novel construction of silicon nanowire （SiNW） negative-AND （NAND） logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high Ion/off ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties.
