The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light...The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interracial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.展开更多
Transparent conducting oxides are increasingly important for optoelectronic and thin film transistor applications.La doped BaSnO_(3)is a strong candidate for its high transparency,high carrier concentration,high mobil...Transparent conducting oxides are increasingly important for optoelectronic and thin film transistor applications.La doped BaSnO_(3)is a strong candidate for its high transparency,high carrier concentration,high mobility and abundancy.However,due to the lack of lattice-matched substrates,the mobility of La:BaSnO_(3)remains inferior to single crystals.Here,by constructing a novel approach via delta doping La:BaSnO_(3)in a BaSnO_(3)/La:BaSnO_(3)/BaSnO_(3)(BSO/LBSO/BSO)heterostructure,we achieved room temperature mobility enhancement up to 110 cm^(2)·V^(−1)·s^(−1)while keeping the high carrier concentration at 5×10^(20)cm^(−3),reaching to the highest electrical conductivity in BaSnO_(3)based systems.The mobility is enhanced more than 100%compared to our La:BaSnO_(3)films,which is among the highest mobility in BaSnO_(3)based films and heterostructures.From atomic structural investigations,we found that both(1)the carrier confinement due to delta doping and(2)dislocation-free La:BaSnO_(3)conducting channel,revealed by atomic resolution scanning transmission electron microscopy(STEM)studies,are responsible for mobility enhancement.The enhanced mobility from heterostructure approach is widely applicable for transparent electrodes and high current thin film transistor applications.展开更多
Co-precipitation method and conventional solid-state reaction technique were used to synthesize BaSnO3 nanoparticles and (BaSnO3)x/Bi1.6Pb0.4Sr2Ca2Cu3O10+δ (0≤x≤ 1.50w t％) samples,respectively.X-ray powder diffrac...Co-precipitation method and conventional solid-state reaction technique were used to synthesize BaSnO3 nanoparticles and (BaSnO3)x/Bi1.6Pb0.4Sr2Ca2Cu3O10+δ (0≤x≤ 1.50w t％) samples,respectively.X-ray powder diffraction (XRD),scanning electron microscopy (SEM),and electrical resistivity data were used to characterize BiPb-2223 phase added by BaSnO3 nanoparticles.The relative volume fraction and superconducting transition temperature Tc of BiPb-2223 phase were enhanced by increasing BaSnO3 addition up to 0.50 wt％.These parameters were decreased with further increase of x.The resistive transition broadening under different applied DC magnetic fields (0.29-4.40kG) was analyzed through thermally activated flux creep (TAFC) model and Ambegaokar-Halperin (AH) theory.Improvements of the derived flux pinning energy U,critical current density Jc (0) estimated from AH parameter C(B),and upper critical magnetic field Bc2 (0),were recorded by adding BaSnO3 nanoparticles up to 0.50 wt％,beyond which these parameters were suppressed.The magnetic field dependence of the flux pinning energy and critical current density decreased as a power-law relation,which indicated the single junction sensitivity between the superconducting grains to the applied magnetic field.Furthermore,the increase in the applied magnetic field did not affect the electronic thermal conductivity Ke above the superconducting transition temperature and suppressed it below Tc.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11174135 and 60976016)the National 973 Project,China(Gant No.0213117005)+3 种基金the State Key Program for Basic Research of China(Grant No.2010CB630704)the Science Foundation of Henan Province,China(Grant No.14A430020)the Science Foundation of Henan University,China(Grant No.SBGJ090503)China Postdoctoral Science Foundation(Grant No.2012M511250)
文摘The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interracial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.
基金supported by National Natural Science Foundation of China(Grant Nos.52172115)Nature Science Foundation of Guangdong Province,China(Grant Nos.2022A1515010762)+3 种基金supported by Shenzhen Science and Technology Program(Grant Nos.20231121093057002)Outstanding Talents Training Fund in Shenzhen(202106)supported by the Guangdong Provincial Key Laboratory Program(Grant No.2021B1212040001)Guangdong Basic and Applied Basic Research Foundation(Grant No.2023B1515130003)。
文摘Transparent conducting oxides are increasingly important for optoelectronic and thin film transistor applications.La doped BaSnO_(3)is a strong candidate for its high transparency,high carrier concentration,high mobility and abundancy.However,due to the lack of lattice-matched substrates,the mobility of La:BaSnO_(3)remains inferior to single crystals.Here,by constructing a novel approach via delta doping La:BaSnO_(3)in a BaSnO_(3)/La:BaSnO_(3)/BaSnO_(3)(BSO/LBSO/BSO)heterostructure,we achieved room temperature mobility enhancement up to 110 cm^(2)·V^(−1)·s^(−1)while keeping the high carrier concentration at 5×10^(20)cm^(−3),reaching to the highest electrical conductivity in BaSnO_(3)based systems.The mobility is enhanced more than 100%compared to our La:BaSnO_(3)films,which is among the highest mobility in BaSnO_(3)based films and heterostructures.From atomic structural investigations,we found that both(1)the carrier confinement due to delta doping and(2)dislocation-free La:BaSnO_(3)conducting channel,revealed by atomic resolution scanning transmission electron microscopy(STEM)studies,are responsible for mobility enhancement.The enhanced mobility from heterostructure approach is widely applicable for transparent electrodes and high current thin film transistor applications.
文摘Co-precipitation method and conventional solid-state reaction technique were used to synthesize BaSnO3 nanoparticles and (BaSnO3)x/Bi1.6Pb0.4Sr2Ca2Cu3O10+δ (0≤x≤ 1.50w t％) samples,respectively.X-ray powder diffraction (XRD),scanning electron microscopy (SEM),and electrical resistivity data were used to characterize BiPb-2223 phase added by BaSnO3 nanoparticles.The relative volume fraction and superconducting transition temperature Tc of BiPb-2223 phase were enhanced by increasing BaSnO3 addition up to 0.50 wt％.These parameters were decreased with further increase of x.The resistive transition broadening under different applied DC magnetic fields (0.29-4.40kG) was analyzed through thermally activated flux creep (TAFC) model and Ambegaokar-Halperin (AH) theory.Improvements of the derived flux pinning energy U,critical current density Jc (0) estimated from AH parameter C(B),and upper critical magnetic field Bc2 (0),were recorded by adding BaSnO3 nanoparticles up to 0.50 wt％,beyond which these parameters were suppressed.The magnetic field dependence of the flux pinning energy and critical current density decreased as a power-law relation,which indicated the single junction sensitivity between the superconducting grains to the applied magnetic field.Furthermore,the increase in the applied magnetic field did not affect the electronic thermal conductivity Ke above the superconducting transition temperature and suppressed it below Tc.
