This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) unde...This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) under high linear energy transfer heavyion experimentation.The experimental findings demonstrate that applying a negative back-gate bias to NMOS and a positive back-gate bias to PMOS enhances the SEU resistance of SRAM.Specifically,as the back-gate bias for N-type transistors(V_(nsoi)) decreases from 0 to-10 V,the SEU cross section decreases by 93.23%,whereas an increase in the back-gate bias for P-type transistors (V_(psoi)) from 0 to 10 V correlates with an 83.7%reduction in SEU cross section.Furthermore,a significant increase in the SEU cross section was observed with increase in supply voltage,as evidenced by a 159%surge at V_(DD)=1.98 V compared with the nominal voltage of 1.8 V.To explore the physical mechanisms underlying these experimental data,we analyzed the dependence of the critical charge of the circuit and the collected charge on the bias voltage by simulating SEUs using technology computer-aided design.展开更多
A non-depletion floating layer silicon-on-insulator （NFL SOI） lateral double-diffused metal–oxide–semiconductor （LDMOS） is proposed and the NFL-assisted modulated field （NFLAMF） principle is investigated in th...A non-depletion floating layer silicon-on-insulator （NFL SOI） lateral double-diffused metal–oxide–semiconductor （LDMOS） is proposed and the NFL-assisted modulated field （NFLAMF） principle is investigated in this paper. Based on this principle, the floating layer can pin the potential for modulating bulk field. In particular, the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer （BOX）. At variation of back-gate bias, the shielding charges of NFL can also eliminate back-gate effects. The simulated results indicate that the breakdown voltage （BV） is increased from 315 V to 558 V compared to the conventional reduced surface field （RESURF） SOI （CSOI） LDMOS, yielding a 77% improvement. Furthermore, due to the field shielding effect of the NFL, the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.展开更多
We report a back-gated metal-oxide-ferroelectric-metal （MOFM） field-effect transistor （FET） with lead zirconate titanate （PZT） material, in which an Al doped zinc oxide （AZO） channel layer with an optimized do...We report a back-gated metal-oxide-ferroelectric-metal （MOFM） field-effect transistor （FET） with lead zirconate titanate （PZT） material, in which an Al doped zinc oxide （AZO） channel layer with an optimized doping concentration of 1% is applied to reduce the channel resistance of the channel layer, thus guaranteeing a large enough load capacity of the transistor. The hysteresis loops of the Pt/PZT/AZO/Ti/Pt capacitor are measured and compared with a Pt/PZT/Pt capacitor, indicating that the remnant polarization is almost 40 μC/cm^2 and the polarization is saturated at 20 V. The measured capacitance-voltage properties are analyzed as a result of the electron depletion and accumulation switching operation conducted by the modulation of PZT on AZO channel resistance caused by the switchable remnant polarization of PZT. The switching properties of the AZO channel layer are also proved by the current-voltage transfer curves measured in the back-gated MOFM ferroelectric FET, which also show a drain current switching ratio up to about 100 times.展开更多
We show the fabrication of flexible graphene devices with an embedded backgate. The resistance of these devices can be tuned by changing the strain through the bending of the substrate. These devices can be useful for...We show the fabrication of flexible graphene devices with an embedded backgate. The resistance of these devices can be tuned by changing the strain through the bending of the substrate. These devices can be useful for applications requiring a flexible graphene-based field effect transistor in where the graphene channel is not covered (such as biological or chemical sensors and photo-detectors).展开更多
The hysteresis effect in the output characteristics,originating from the floating body effect,has been measured in partially depleted（PD） silicon-on-insulator（SOI） MOSFETs at different back-gate biases.I D hystere...The hysteresis effect in the output characteristics,originating from the floating body effect,has been measured in partially depleted（PD） silicon-on-insulator（SOI） MOSFETs at different back-gate biases.I D hysteresis has been developed to clarify the hysteresis characteristics.The fabricated devices show the positive and negative peaks in the I D hysteresis.The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-渭m PD SOI MOSFETs and does not vary monotonously with the back-gate bias.Based on the steady-state Shockley-Read-Hall（SRH） recombination theory,we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs.展开更多
0.5μm-gate-length lateral double-diffused metal-oxide-semiconductor field-effect transistors （LDMOSFETs） with low barrier body contact （LBBC） and body tied to the source （BTS） were fabricated on silicon-on-insu...0.5μm-gate-length lateral double-diffused metal-oxide-semiconductor field-effect transistors （LDMOSFETs） with low barrier body contact （LBBC） and body tied to the source （BTS） were fabricated on silicon-on-insulator （SOI） substrates. The back-gate effects on front-channel subthreshold characteristics, on-resistance, and off-state breakdown characteristics of these devices are studied in detail. The LDMOSFETs with the LBBC structure show less back-gate effect than those with the BTS structure due to better control of the floating body effect and suppression of the parasitic backchannel leakage current. A model for the SOl LDMOSFETs has been given,including the front- and back-channel conductions as well as the bias-dependent series resistance.展开更多
Deep ultraviolet(DUV)phototransistors are key integral of optoelectronics bearing a wide spectrum of applications in flame sensor,military detector,oil spill detection,biological sensor,and artificial intelligence fie...Deep ultraviolet(DUV)phototransistors are key integral of optoelectronics bearing a wide spectrum of applications in flame sensor,military detector,oil spill detection,biological sensor,and artificial intelligence fields.In order to further improve the responsivity of UV photodetectors based onβ-Ga_(2)O_(3),in present work,high-performanceβ-Ga_(2)O_(3) phototransistors with local back-gate structure were experimentally demonstrated.The phototransistor shows excellent DUV photoelectrical performance with a high responsivity of 1.01×107 A/W,a high external quantum efficiency of 5.02×109%,a sensitive detectivity of 2.98×1015 Jones,and a fast rise time of 0.2 s under 250 nm illumination.Besides,first-principles calculations reveal the decent stability ofβGa_(2)O_(3) nanosheet against oxidation and humidity without significant performance degradations.Additionally,the hexagonal boron nitride(h-BN)/β-Ga_(2)O_(3) phototransistor can behave as a photonic synapse with ultralow power consumption of~9.6 fJ per spike,which shows its potential for neuromorphic computing tasks such as facial recognition.Thisβ-Ga_(2)O_(3) phototransistor will provide a perspective for the next generation optoelectrical systems.展开更多
The stability of a graphene field effect transistor（GFET） is important to its performance optimization, and study of hysteresis behavior can propose useful suggestions for GFET fabrication and optimization.In this w...The stability of a graphene field effect transistor（GFET） is important to its performance optimization, and study of hysteresis behavior can propose useful suggestions for GFET fabrication and optimization.In this work,a back-gate GFET has been fabricated and characterized,which is compatible with the CMOS process.The stability of a GFET in air has been studied and it is found that a GFET＇s electrical performance dramatically changes when exposed to air.The hysteresis characteristic of a GFET depending on time has been observed and analyzed systematically.Hysteresis behavior is reversed at room temperature with the Dirac point positive shifted when the GFET is exposed to air after annealing.展开更多
The performance of a LOCOS-isolated SOI MOSFET heavily depends on its back-gate characteristic, which can be affected by back-gate stress.A large voltage stress was applied to the back gate of SOI devices for at least...The performance of a LOCOS-isolated SOI MOSFET heavily depends on its back-gate characteristic, which can be affected by back-gate stress.A large voltage stress was applied to the back gate of SOI devices for at least 30 s at room temperature,which could effectively modify the back-gate threshold voltage of these devices. This modification is stable and time invariant.In order to improve the back-gate threshold voltage,positive substrate bias was applied to NMOS devices and negative substrate bias was applied to PMOS devices.These results suggest that there is a leakage path between source and drain along the silicon island edge,and the application of large backgate bias with the source,drain and gate grounded can strongly affect this leakage path.So we draw the conclusion that the back-gate threshold voltage,which is directly related to the leakage current,can be influenced by back-gate stress.展开更多
二硫化钨(WS_(2))属于过渡金属硫族化合物(TMDs)材料,具有较宽的可调带隙(1.3~2.1 e V),缺陷密度相对较低,且有超高的表面积比,可通过外界掺杂或相变处理来改善载流子传输性能,在低功耗场效应晶体管和超灵敏光电探测器等领域有广阔的应...二硫化钨(WS_(2))属于过渡金属硫族化合物(TMDs)材料,具有较宽的可调带隙(1.3~2.1 e V),缺陷密度相对较低,且有超高的表面积比,可通过外界掺杂或相变处理来改善载流子传输性能,在低功耗场效应晶体管和超灵敏光电探测器等领域有广阔的应用前景。采用微机械剥离的方法将多层WS_(2)薄膜转移到氧化铪(HfO2)介质层上,制备出具有高栅控、低功耗的WS_(2)背栅场效应晶体管,通过注入三乙胺(TEA)实现WS_(2)薄膜的表面电子掺杂。实验结果表明,修饰后的多层WS_(2)薄膜的面内振动模式有轻微位移,拉曼特征峰强度变弱,证明三乙胺溶液能有效增加WS_(2)薄膜内的电子浓度;薄膜与金属电极之间的欧姆接触良好,器件的电子迁移率由10.87 cm^(2)·V^(-1)·s^(-1)提升到24.89 cm^(2)·V^(-1)·s^(-1),室温下的电流开关比保持在106,亚阈值摆幅为190.11 m V/dec。结合理论分析TEA对WS_(2)原子薄层的掺杂机理,TEA通过表面电荷转移的方式来增加WS_(2)半导体内的电子浓度,完成WS_(2)背栅场效应晶体管的n型掺杂。器件较高的电流开关比及电子迁移率的提升证明了TEA的表面修饰能有效调控多层WS_(2)晶体管器件的电子传输特性。展开更多
基金supported by the National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment(No.6142910220208)National Natural Science Foundation of China(Nos.12105341 and 12035019)the opening fund of Key Laboratory of Silicon Device and Technology,Chinese Academy of Sciences(No.KLSDTJJ2022-3).
文摘This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) under high linear energy transfer heavyion experimentation.The experimental findings demonstrate that applying a negative back-gate bias to NMOS and a positive back-gate bias to PMOS enhances the SEU resistance of SRAM.Specifically,as the back-gate bias for N-type transistors(V_(nsoi)) decreases from 0 to-10 V,the SEU cross section decreases by 93.23%,whereas an increase in the back-gate bias for P-type transistors (V_(psoi)) from 0 to 10 V correlates with an 83.7%reduction in SEU cross section.Furthermore,a significant increase in the SEU cross section was observed with increase in supply voltage,as evidenced by a 159%surge at V_(DD)=1.98 V compared with the nominal voltage of 1.8 V.To explore the physical mechanisms underlying these experimental data,we analyzed the dependence of the critical charge of the circuit and the collected charge on the bias voltage by simulating SEUs using technology computer-aided design.
文摘A non-depletion floating layer silicon-on-insulator （NFL SOI） lateral double-diffused metal–oxide–semiconductor （LDMOS） is proposed and the NFL-assisted modulated field （NFLAMF） principle is investigated in this paper. Based on this principle, the floating layer can pin the potential for modulating bulk field. In particular, the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer （BOX）. At variation of back-gate bias, the shielding charges of NFL can also eliminate back-gate effects. The simulated results indicate that the breakdown voltage （BV） is increased from 315 V to 558 V compared to the conventional reduced surface field （RESURF） SOI （CSOI） LDMOS, yielding a 77% improvement. Furthermore, due to the field shielding effect of the NFL, the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.
基金Supported by the Fundamental Research Funds for the Central Universities of China
文摘We report a back-gated metal-oxide-ferroelectric-metal （MOFM） field-effect transistor （FET） with lead zirconate titanate （PZT） material, in which an Al doped zinc oxide （AZO） channel layer with an optimized doping concentration of 1% is applied to reduce the channel resistance of the channel layer, thus guaranteeing a large enough load capacity of the transistor. The hysteresis loops of the Pt/PZT/AZO/Ti/Pt capacitor are measured and compared with a Pt/PZT/Pt capacitor, indicating that the remnant polarization is almost 40 μC/cm^2 and the polarization is saturated at 20 V. The measured capacitance-voltage properties are analyzed as a result of the electron depletion and accumulation switching operation conducted by the modulation of PZT on AZO channel resistance caused by the switchable remnant polarization of PZT. The switching properties of the AZO channel layer are also proved by the current-voltage transfer curves measured in the back-gated MOFM ferroelectric FET, which also show a drain current switching ratio up to about 100 times.
文摘We show the fabrication of flexible graphene devices with an embedded backgate. The resistance of these devices can be tuned by changing the strain through the bending of the substrate. These devices can be useful for applications requiring a flexible graphene-based field effect transistor in where the graphene channel is not covered (such as biological or chemical sensors and photo-detectors).
基金Project supported by the TCAD Simulation and SPICE Modeling of 0.13μm SOI Technology,China (Grant No. 2009ZX02306-002)
文摘The hysteresis effect in the output characteristics,originating from the floating body effect,has been measured in partially depleted（PD） silicon-on-insulator（SOI） MOSFETs at different back-gate biases.I D hysteresis has been developed to clarify the hysteresis characteristics.The fabricated devices show the positive and negative peaks in the I D hysteresis.The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-渭m PD SOI MOSFETs and does not vary monotonously with the back-gate bias.Based on the steady-state Shockley-Read-Hall（SRH） recombination theory,we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs.
基金the National Natural Science Foundation of China(No.60576051)the State Key Development Program for Basic Research of China(No.2006CB3027-01)~~
文摘0.5μm-gate-length lateral double-diffused metal-oxide-semiconductor field-effect transistors （LDMOSFETs） with low barrier body contact （LBBC） and body tied to the source （BTS） were fabricated on silicon-on-insulator （SOI） substrates. The back-gate effects on front-channel subthreshold characteristics, on-resistance, and off-state breakdown characteristics of these devices are studied in detail. The LDMOSFETs with the LBBC structure show less back-gate effect than those with the BTS structure due to better control of the floating body effect and suppression of the parasitic backchannel leakage current. A model for the SOl LDMOSFETs has been given,including the front- and back-channel conductions as well as the bias-dependent series resistance.
基金supported by the National Natural Science Foundation of China(Nos.62027818,61874034,51861135105,and 51972319)International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300)Science and Technology Commission of Shanghai Municipality(No.19520744400).
文摘Deep ultraviolet(DUV)phototransistors are key integral of optoelectronics bearing a wide spectrum of applications in flame sensor,military detector,oil spill detection,biological sensor,and artificial intelligence fields.In order to further improve the responsivity of UV photodetectors based onβ-Ga_(2)O_(3),in present work,high-performanceβ-Ga_(2)O_(3) phototransistors with local back-gate structure were experimentally demonstrated.The phototransistor shows excellent DUV photoelectrical performance with a high responsivity of 1.01×107 A/W,a high external quantum efficiency of 5.02×109%,a sensitive detectivity of 2.98×1015 Jones,and a fast rise time of 0.2 s under 250 nm illumination.Besides,first-principles calculations reveal the decent stability ofβGa_(2)O_(3) nanosheet against oxidation and humidity without significant performance degradations.Additionally,the hexagonal boron nitride(h-BN)/β-Ga_(2)O_(3) phototransistor can behave as a photonic synapse with ultralow power consumption of~9.6 fJ per spike,which shows its potential for neuromorphic computing tasks such as facial recognition.Thisβ-Ga_(2)O_(3) phototransistor will provide a perspective for the next generation optoelectrical systems.
基金supported by the National Sciences and Technology Major Project 02
文摘The stability of a graphene field effect transistor（GFET） is important to its performance optimization, and study of hysteresis behavior can propose useful suggestions for GFET fabrication and optimization.In this work,a back-gate GFET has been fabricated and characterized,which is compatible with the CMOS process.The stability of a GFET in air has been studied and it is found that a GFET＇s electrical performance dramatically changes when exposed to air.The hysteresis characteristic of a GFET depending on time has been observed and analyzed systematically.Hysteresis behavior is reversed at room temperature with the Dirac point positive shifted when the GFET is exposed to air after annealing.
基金supported by the National Natural Science Foundation of China(No.60927006)the Major Projects of National Science and Technology
文摘The performance of a LOCOS-isolated SOI MOSFET heavily depends on its back-gate characteristic, which can be affected by back-gate stress.A large voltage stress was applied to the back gate of SOI devices for at least 30 s at room temperature,which could effectively modify the back-gate threshold voltage of these devices. This modification is stable and time invariant.In order to improve the back-gate threshold voltage,positive substrate bias was applied to NMOS devices and negative substrate bias was applied to PMOS devices.These results suggest that there is a leakage path between source and drain along the silicon island edge,and the application of large backgate bias with the source,drain and gate grounded can strongly affect this leakage path.So we draw the conclusion that the back-gate threshold voltage,which is directly related to the leakage current,can be influenced by back-gate stress.
文摘二硫化钨(WS_(2))属于过渡金属硫族化合物(TMDs)材料,具有较宽的可调带隙(1.3~2.1 e V),缺陷密度相对较低,且有超高的表面积比,可通过外界掺杂或相变处理来改善载流子传输性能,在低功耗场效应晶体管和超灵敏光电探测器等领域有广阔的应用前景。采用微机械剥离的方法将多层WS_(2)薄膜转移到氧化铪(HfO2)介质层上,制备出具有高栅控、低功耗的WS_(2)背栅场效应晶体管,通过注入三乙胺(TEA)实现WS_(2)薄膜的表面电子掺杂。实验结果表明,修饰后的多层WS_(2)薄膜的面内振动模式有轻微位移,拉曼特征峰强度变弱,证明三乙胺溶液能有效增加WS_(2)薄膜内的电子浓度;薄膜与金属电极之间的欧姆接触良好,器件的电子迁移率由10.87 cm^(2)·V^(-1)·s^(-1)提升到24.89 cm^(2)·V^(-1)·s^(-1),室温下的电流开关比保持在106,亚阈值摆幅为190.11 m V/dec。结合理论分析TEA对WS_(2)原子薄层的掺杂机理,TEA通过表面电荷转移的方式来增加WS_(2)半导体内的电子浓度,完成WS_(2)背栅场效应晶体管的n型掺杂。器件较高的电流开关比及电子迁移率的提升证明了TEA的表面修饰能有效调控多层WS_(2)晶体管器件的电子传输特性。
