In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing met...In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing methods,an enhanced double remnant polarization(2Pr)of 55.4μC/cm^(2),a higher maximum dielectric constant,and nearly wakeup-free were realized by modulating the power of the microwave.It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules,which facilitates the crystallization at low temperature.Furthermore,an amorphous indium gallium zinc oxide ferroelectric fieldeffect transistor treated with microwave annealing was fabricated,and a competitive memory window of 1.5 V was substantially achieved.These findings offer insights into the integration of HfO_(2)ferroelectric materials in non-volatile memory devices compatible with back-end-of-line(BEOL)in the future.展开更多
A hearing aid on-chip system based on accuracy optimized front- and back-end blocks is presented for enhancing the signal processing accuracy of the hearing aid. Compared with the conventional system, the accuracy opt...A hearing aid on-chip system based on accuracy optimized front- and back-end blocks is presented for enhancing the signal processing accuracy of the hearing aid. Compared with the conventional system, the accuracy optimized system is characterized by the dual feedback network and the gain compensation technique used in the front-andback-endblocks,respectively,soastoalleviatethenonlinearitydistortioncausedbytheoutputswing.By usingthetechnique,theaccuracyofthewholehearingaidsystemcanbesignificantlyimproved.Theprototypechip has been designed with a 0.13 m standard CMOS process and tested with 1 V supply voltage. The measurement results show that, for driving a 16 loudspeaker with a normalized output level of 300 mV p-p, the total harmonic distortion reached about60 dB, achieving at least three times reduction compared to the previously reported works. In addition, the typical input referred noise is only about 5 υV rms.展开更多
基金supported by National Key Research and Development Program of China under Grant 2021YFB3202500Shanghai Municipal Science and Technology Commission under Grant 23511102300.
文摘In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing methods,an enhanced double remnant polarization(2Pr)of 55.4μC/cm^(2),a higher maximum dielectric constant,and nearly wakeup-free were realized by modulating the power of the microwave.It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules,which facilitates the crystallization at low temperature.Furthermore,an amorphous indium gallium zinc oxide ferroelectric fieldeffect transistor treated with microwave annealing was fabricated,and a competitive memory window of 1.5 V was substantially achieved.These findings offer insights into the integration of HfO_(2)ferroelectric materials in non-volatile memory devices compatible with back-end-of-line(BEOL)in the future.
基金Project supported by the National High Technology Research and Development Program of China(No.2008AA010701)
文摘A hearing aid on-chip system based on accuracy optimized front- and back-end blocks is presented for enhancing the signal processing accuracy of the hearing aid. Compared with the conventional system, the accuracy optimized system is characterized by the dual feedback network and the gain compensation technique used in the front-andback-endblocks,respectively,soastoalleviatethenonlinearitydistortioncausedbytheoutputswing.By usingthetechnique,theaccuracyofthewholehearingaidsystemcanbesignificantlyimproved.Theprototypechip has been designed with a 0.13 m standard CMOS process and tested with 1 V supply voltage. The measurement results show that, for driving a 16 loudspeaker with a normalized output level of 300 mV p-p, the total harmonic distortion reached about60 dB, achieving at least three times reduction compared to the previously reported works. In addition, the typical input referred noise is only about 5 υV rms.
