In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing met...In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing methods,an enhanced double remnant polarization(2Pr)of 55.4μC/cm^(2),a higher maximum dielectric constant,and nearly wakeup-free were realized by modulating the power of the microwave.It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules,which facilitates the crystallization at low temperature.Furthermore,an amorphous indium gallium zinc oxide ferroelectric fieldeffect transistor treated with microwave annealing was fabricated,and a competitive memory window of 1.5 V was substantially achieved.These findings offer insights into the integration of HfO_(2)ferroelectric materials in non-volatile memory devices compatible with back-end-of-line(BEOL)in the future.展开更多
基金supported by National Key Research and Development Program of China under Grant 2021YFB3202500Shanghai Municipal Science and Technology Commission under Grant 23511102300.
文摘In this work,we demonstrate an extremely low annealing processing at 300C for the crystallization of Hf_(0.5)Zr_(0.5)O_(2)(HZO)films with the adoption of microwave annealing(MWA).Compared to conventional annealing methods,an enhanced double remnant polarization(2Pr)of 55.4μC/cm^(2),a higher maximum dielectric constant,and nearly wakeup-free were realized by modulating the power of the microwave.It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules,which facilitates the crystallization at low temperature.Furthermore,an amorphous indium gallium zinc oxide ferroelectric fieldeffect transistor treated with microwave annealing was fabricated,and a competitive memory window of 1.5 V was substantially achieved.These findings offer insights into the integration of HfO_(2)ferroelectric materials in non-volatile memory devices compatible with back-end-of-line(BEOL)in the future.
