With the development of the third generation of semiconductor devices,it is essential to achieve precise etching of gallium nitride(GaN)materials that is close to the atomic level.Compared with the traditional wet etc...With the development of the third generation of semiconductor devices,it is essential to achieve precise etching of gallium nitride(GaN)materials that is close to the atomic level.Compared with the traditional wet etching and continuous plasma etching,plasma atomic layer etching(ALE)of GaN has the advantages of self-limiting etching,high selectivity to other materials,and smooth etched surface.In this paper the basic properties and applications of GaN are presented.It also presents the various etching methods of GaN.GaN plasma ALE systems are reviewed,and their similarities and differences are compared.In addition,the industrial application of GaN plasma ALE is outlined.展开更多
Atomic layer etching(ALE)of thin film GaN(0001)is reported in detail using sequential surface modification by BCl_(3) adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a reactive...Atomic layer etching(ALE)of thin film GaN(0001)is reported in detail using sequential surface modification by BCl_(3) adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a reactive ion etching system.The estimated etching rate of GaN is~0.74 nm/cycle.The GaN is removed from the surface of AlGaN after 135 cycles.To study the mechanism of the etching,the detailed characterization and analyses are carried out,including scanning electron microscope(SEM),x-ray photoelectron spectroscopy(XPS),and atomic force microscope(AFM).It is found that in the presence of GaCl_(x) after surface modification by BCl_(3),the GaCl_(x) disappears after having exposed to low energy Ar plasma,which effectively exhibits the mechanism of atomic layer etch.This technique enables a uniform and reproducible fabrication process for enhancement-mode high electron mobility transistors with a p-GaN gate.展开更多
基金This work was supported by the Key Projects of Ministry of Science and Technology of the People’s Republic of China(Grant No.SQ2020YFF0407077)the Industry-University-Research Cooperation Project of Jiangsu Province(Grant No.BY2020462)+1 种基金the National Foreign Experts Bureau High-end Foreign Experts Project(Grant No.G20190114003)Postgraduate Research&Practice Innovation Program of Jiangsu Province(Grant No.2021XKT1206).
文摘With the development of the third generation of semiconductor devices,it is essential to achieve precise etching of gallium nitride(GaN)materials that is close to the atomic level.Compared with the traditional wet etching and continuous plasma etching,plasma atomic layer etching(ALE)of GaN has the advantages of self-limiting etching,high selectivity to other materials,and smooth etched surface.In this paper the basic properties and applications of GaN are presented.It also presents the various etching methods of GaN.GaN plasma ALE systems are reviewed,and their similarities and differences are compared.In addition,the industrial application of GaN plasma ALE is outlined.
基金the National Foreign Experts Bureau High-end Foreign Experts Project,China(Grant No.G20190114003)the Key Research and Development Program of Jiangsu Province,China(Grant No.BE2018063)+1 种基金the Natural Science Research Projects of Colleges and Universities in Jiangsu Province,China(Grant No.19KJD140002)the Scientific Research Program for Doctoral Teachers of JSNU,China(Grant No.9212218113).
文摘Atomic layer etching(ALE)of thin film GaN(0001)is reported in detail using sequential surface modification by BCl_(3) adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a reactive ion etching system.The estimated etching rate of GaN is~0.74 nm/cycle.The GaN is removed from the surface of AlGaN after 135 cycles.To study the mechanism of the etching,the detailed characterization and analyses are carried out,including scanning electron microscope(SEM),x-ray photoelectron spectroscopy(XPS),and atomic force microscope(AFM).It is found that in the presence of GaCl_(x) after surface modification by BCl_(3),the GaCl_(x) disappears after having exposed to low energy Ar plasma,which effectively exhibits the mechanism of atomic layer etch.This technique enables a uniform and reproducible fabrication process for enhancement-mode high electron mobility transistors with a p-GaN gate.
