Hybrid perovskites have attracted enormous attention in the next generation resistive switching(RS)memristor for the artificial synapses,owing to their ambipolar charge transport,long diffusion length,and tunable visi...Hybrid perovskites have attracted enormous attention in the next generation resistive switching(RS)memristor for the artificial synapses,owing to their ambipolar charge transport,long diffusion length,and tunable visible bandgap.However,the variable switch,limited reproducibility,and poor endurance are the obstacles to the practical application of the perovskite memristors.Herein,we reported a multilevel RS nonvolatile memory based on a 3D trigonal HC(NH_(2))_(2)PbI_(3)(α‐FAPbI_(3))perovskite layer modified by 1‐cyanobutyl‐3‐methylimidazolium chloride([CNBmim]Cl)and sandwiched between ITO and Au electrodes(Au/[CNBmim]Cl/α‐FAPbI_(3)/SnO_(2)/ITO).In contrast to the bare memristor with failure switching from low resistance state(LRS)to high resistance state(HRS),the memristor device based on theα‐FAPbI_(3) modified with[CNBmim]Cl(Target device)shows the retention time over 10^(4) s with On/Off ratio(>10^(2))and endurance up to 550 cycles.The stable RS cycle benefits from the accelerated electrons de‐trapping from the reduced defects and fast charge separation in the interface ofα‐FAPbI_(3)/electrode,leading to the rupture of conductive filaments and transition of LRS to HRS.As a two‐terminal analog synaptic device,the target device can realize random handwritten digit recognition with an impressive accuracy of 89.3%on the condition of low learning phases(500 training cycles).展开更多
基金The authors are grateful for financial support from the National Natural Science Foundation of China(No.11874143)the Natural Science Foundation of Hubei Province(No.2022CFB402)+1 种基金Science and Technology Major Project of Hubei(No.2022AEA001)the Application Fundamental Research Project of Wuhan Science and Technology Bureau(No.2019010701011396).
文摘Hybrid perovskites have attracted enormous attention in the next generation resistive switching(RS)memristor for the artificial synapses,owing to their ambipolar charge transport,long diffusion length,and tunable visible bandgap.However,the variable switch,limited reproducibility,and poor endurance are the obstacles to the practical application of the perovskite memristors.Herein,we reported a multilevel RS nonvolatile memory based on a 3D trigonal HC(NH_(2))_(2)PbI_(3)(α‐FAPbI_(3))perovskite layer modified by 1‐cyanobutyl‐3‐methylimidazolium chloride([CNBmim]Cl)and sandwiched between ITO and Au electrodes(Au/[CNBmim]Cl/α‐FAPbI_(3)/SnO_(2)/ITO).In contrast to the bare memristor with failure switching from low resistance state(LRS)to high resistance state(HRS),the memristor device based on theα‐FAPbI_(3) modified with[CNBmim]Cl(Target device)shows the retention time over 10^(4) s with On/Off ratio(>10^(2))and endurance up to 550 cycles.The stable RS cycle benefits from the accelerated electrons de‐trapping from the reduced defects and fast charge separation in the interface ofα‐FAPbI_(3)/electrode,leading to the rupture of conductive filaments and transition of LRS to HRS.As a two‐terminal analog synaptic device,the target device can realize random handwritten digit recognition with an impressive accuracy of 89.3%on the condition of low learning phases(500 training cycles).
