The development of high-performance neuromorphic phototransistors is of paramount importance for image perception and depth memory learning.Here,based on metal-oxide heterojunction architecture,artificial synaptic pho...The development of high-performance neuromorphic phototransistors is of paramount importance for image perception and depth memory learning.Here,based on metal-oxide heterojunction architecture,artificial synaptic phototransistors with synaptic plasticity have been achieved,demonstrating an artificial synapse that integrates central and optic nerve functions.Thanks to the sensitive light-detection properties,the optical power consumption of such photonic artificial synapses can be as low as 22 picojoules,which is extremely competitive compared with other pure metal oxide photoelectric synapses ever reported.What is more,owing to its good short-term(STP)and tunable amplitude-frequency characteristics,the as-constructed device can function as a biomimetic high-pass filter for picture edge detection.Dual-mode synaptic modulation has been performed,combining photonic pulse with gate voltage stimulus.After photoelectric-synergistic modulation,the high synaptic weights enable the device to simulate complex neural learning rules for neuromorphic applications,including gesture recognition,image perception in the visual system,and classically conditioned reflexes.These results suggest that the current oxide-based heterojunction architecture displays potential application in future multifunction neuromorphic devices and systems.展开更多
The ionic environment of body fluids influences nervous functions for maintaining homeostasis in organisms and ensures normal perceptual abilities and reflex activities.Neural reflex activities,such as limb movements,...The ionic environment of body fluids influences nervous functions for maintaining homeostasis in organisms and ensures normal perceptual abilities and reflex activities.Neural reflex activities,such as limb movements,are closely associated with potassium ions(K+).In this study,we developed artificial synaptic devices based on ion concentration-adjustable gels for emulating various synaptic plasticities under different K+concentrations in body fluids.In addition to performing essential synaptic functions,potential applications in information processing and associative learning using short-and long-term plasticity realized using ion concentration-adjustable gels are presented.Artificial synaptic devices can be used for constructing an artificial neural pathway that controls artificial muscle reflex activities and can be used for image pattern recognition.All tests show a strong relationship with ion homeostasis.These devices could be applied to neuromorphic robots and human-machine interfaces.展开更多
Various core memory devices have been proposed for utilization in future inmemory computing technology featuring high energy efficiency.Flash memory is considered as a viable choice owing to its high integration densi...Various core memory devices have been proposed for utilization in future inmemory computing technology featuring high energy efficiency.Flash memory is considered as a viable choice owing to its high integration density,stability,and reliability,which has been verified by commercialized products.However,its high operating voltage and slow operation speed issues caused by the tunneling mechanism make its adoption in in-memory computing applications difficult.In this paper,we introduce a dual-mode memory device named“ferro-floating memory”,fabricated using van der Waals(vdW)materials(h-BN,MoS2,andα-In2Se3).The vdW material,α-In2Se3,acts as a polarization control layer for the ferroelectric memory operation and charge storage layer for the conventional flash memory operation.Compared to the tunnelingbased memory operation,the ferro-floating memory operates 1.9 and 3.3 times faster at 6.7 and 5.8 times lower operating voltages for programming and erasing operations,respectively.The dual-mode operation improves the linearity of conductance change by 5 times and the dynamic range by 48%through achieving conductance variation regions.Furthermore,we assess the effects of the variation in device operating voltage on neural networks and suggest a memory array operating scheme for maximizing the networks'performance through various training/inference simulations.展开更多
基金supported by the National Natural Science Foun-dation of China(Nos.11774001,52202156,52103297)the Anhui Project(No.Z010118169)+2 种基金the Scientific research project of colleges and universities in Anhui Province(No.2022AH050113)the Uni-versity Synergy Innovation Program of Anhui Province(No.GXXT-2022-012)the Postdoctoral daily public start-up funds of An-hui University(No.S202418001/069).
文摘The development of high-performance neuromorphic phototransistors is of paramount importance for image perception and depth memory learning.Here,based on metal-oxide heterojunction architecture,artificial synaptic phototransistors with synaptic plasticity have been achieved,demonstrating an artificial synapse that integrates central and optic nerve functions.Thanks to the sensitive light-detection properties,the optical power consumption of such photonic artificial synapses can be as low as 22 picojoules,which is extremely competitive compared with other pure metal oxide photoelectric synapses ever reported.What is more,owing to its good short-term(STP)and tunable amplitude-frequency characteristics,the as-constructed device can function as a biomimetic high-pass filter for picture edge detection.Dual-mode synaptic modulation has been performed,combining photonic pulse with gate voltage stimulus.After photoelectric-synergistic modulation,the high synaptic weights enable the device to simulate complex neural learning rules for neuromorphic applications,including gesture recognition,image perception in the visual system,and classically conditioned reflexes.These results suggest that the current oxide-based heterojunction architecture displays potential application in future multifunction neuromorphic devices and systems.
基金supported by the National Science Foundation for Distinguished Young Scholars of China(T2125005)Tianjin Science Foundation for Distinguished Young Scholars(19JCJQJC61000)the Shenzhen Science and Technology Project(JCYJ20210324121002008).
文摘The ionic environment of body fluids influences nervous functions for maintaining homeostasis in organisms and ensures normal perceptual abilities and reflex activities.Neural reflex activities,such as limb movements,are closely associated with potassium ions(K+).In this study,we developed artificial synaptic devices based on ion concentration-adjustable gels for emulating various synaptic plasticities under different K+concentrations in body fluids.In addition to performing essential synaptic functions,potential applications in information processing and associative learning using short-and long-term plasticity realized using ion concentration-adjustable gels are presented.Artificial synaptic devices can be used for constructing an artificial neural pathway that controls artificial muscle reflex activities and can be used for image pattern recognition.All tests show a strong relationship with ion homeostasis.These devices could be applied to neuromorphic robots and human-machine interfaces.
基金National Research Foundation of Korea,Grant/Award Numbers:2020M3F3A2A02082436,2020R1A4A2002806,2021R1A2C2010026,2022M3F3A2A01072215Samsung Electronics Co.Ltd.,Grant/Award Number:IO201210-07994-01。
文摘Various core memory devices have been proposed for utilization in future inmemory computing technology featuring high energy efficiency.Flash memory is considered as a viable choice owing to its high integration density,stability,and reliability,which has been verified by commercialized products.However,its high operating voltage and slow operation speed issues caused by the tunneling mechanism make its adoption in in-memory computing applications difficult.In this paper,we introduce a dual-mode memory device named“ferro-floating memory”,fabricated using van der Waals(vdW)materials(h-BN,MoS2,andα-In2Se3).The vdW material,α-In2Se3,acts as a polarization control layer for the ferroelectric memory operation and charge storage layer for the conventional flash memory operation.Compared to the tunnelingbased memory operation,the ferro-floating memory operates 1.9 and 3.3 times faster at 6.7 and 5.8 times lower operating voltages for programming and erasing operations,respectively.The dual-mode operation improves the linearity of conductance change by 5 times and the dynamic range by 48%through achieving conductance variation regions.Furthermore,we assess the effects of the variation in device operating voltage on neural networks and suggest a memory array operating scheme for maximizing the networks'performance through various training/inference simulations.
