Photodetectors with long detection distances and fast response are important media in constructing a non-contact human-machine interface for the Masterly Internet of Things(MIT).All-inorganic perovskites have excellen...Photodetectors with long detection distances and fast response are important media in constructing a non-contact human-machine interface for the Masterly Internet of Things(MIT).All-inorganic perovskites have excellent optoelectronic performance with high moisture and oxygen resistance,making them one of the promising candidates for high-performance photodetectors,but a simple,low-cost and reliable fabrication technology is urgently needed.Here,a dual-function laser etching method is developed to complete both the lyophilic split-ring structure and electrode patterning.This novel split-ring structure can capture the perovskite precursor droplet efficiently and achieve the uniform and compact deposition of CsPbBr3 films.Furthermore,our devices based on laterally conducting split-ring structured photodetectors possess outstanding performance,including the maximum responsivity of 1.44×105 mA W^(−1),a response time of 150μs in 1.5 kHz and one-unit area<4×10-2 mm2.Based on these split-ring photodetector arrays,we realized three-dimensional gesture detection with up to 100 mm distance detection and up to 600 mm s^(−1) speed detection,for low-cost,integrative,and non-contact human-machine interfaces.Finally,we applied this MIT to wearable and flexible digital gesture recognition watch panel,safe and comfortable central controller integrated on the car screen,and remote control of the robot,demonstrating the broad potential applications.展开更多
We have provided optical simulations of the evanescently coupled waveguide photodiodes integrated with a 13- channels AWGs. The photodiode could exhibit high internal efficiency by appropriate choice of layers geometr...We have provided optical simulations of the evanescently coupled waveguide photodiodes integrated with a 13- channels AWGs. The photodiode could exhibit high internal efficiency by appropriate choice of layers geometry and refrac- tive index. Aseamless joint structure has been designed and fabricated for integrating the output waveguides of AWGs with the evanescently coupled waveguide photodiode array. The highest simulation quantum efficiency could achieve 92% when the matching layer thickfiess of the PD is 120 nm and the insertion length is 2 μm. The fabricated PD with 320-nm-thick match.ing layer and 2-μm-length insertion matching layer present a responsivity of 0.87 A/W.展开更多
We design and fabricate a parallel system with 10 high speed side-illuminated evanescently coupled waveguide photodetectors （ECPDs）. The 10 ECPDs exhibit a uniform 3dB bandwidth of 20 GHz and low dark current of abo...We design and fabricate a parallel system with 10 high speed side-illuminated evanescently coupled waveguide photodetectors （ECPDs）. The 10 ECPDs exhibit a uniform 3dB bandwidth of 20 GHz and low dark current of about i nA at 2 V reverse bias. The 10 ECPDs also exhibit uniform photo-responsivity of about 0.23A/W with an active region of 5 × 25μmS. The photodetector array has a total bandwidth of more than 200 GHz and can be integrated with other optoelectronic devices.展开更多
A 4×4 beta-phase gallium oxide(β-Ga_(2)O_(3))deep-ultraviolet(DUV)rectangular 10-fingers interdigital metalsemiconductor-metal(MSM)photodetector array of high photo responsivity is introduced.The Ga2O_(3)thin fi...A 4×4 beta-phase gallium oxide(β-Ga_(2)O_(3))deep-ultraviolet(DUV)rectangular 10-fingers interdigital metalsemiconductor-metal(MSM)photodetector array of high photo responsivity is introduced.The Ga2O_(3)thin film is prepared through the metalorganic chemical vapor deposition technique,then used to construct the photodetector array via photolithography,lift-off,and ion beam sputtering methods.The one photodetector cell shows dark current of 1.94 p A,phototo-dark current ratio of 6×10_(7),photo responsivity of 634.15 A·W^(-1),specific detectivity of 5.93×1011cm·Hz1/2·W^(-1)(Jones),external quantum efficiency of 310000%,and linear dynamic region of 108.94 d B,indicating high performances for DUV photo detection.Furthermore,the 16-cell photodetector array displays uniform performances with decent deviation of 19.6%for photo responsivity.展开更多
In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing application.The 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor depositio...In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing application.The 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;and the photodetector array was fabricated through ultraviolet photolithography,lift-off,and electron-beam evaporation.In addition to the high solar-blind/visible rejection ratio of 104,every photodetector cell in the array has high performance and fast response speed,such as responsivity of 49.4 A W^(-1),specific detectivity of 6.8×10^(14)Jones,external quantum efficiency of 1.9×10^(4)%,linear dynamic range of 117.8 d B,and response time of 41 ms,respectively,indicating the high photo-response performance of the photodetector.Moreover,the photodetector array displayed uniform responsivity with a standard deviation of~6%,and presented a sensing image of low chromatic aberration,owing to the high resolution of the photodetector array.In a word,this work may contribute to developing Ga_(2)O_(3)-based optoelectronic device applications.展开更多
Ga_(2)O_(3)has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost.Although semiconductor microwires(MWs)possess unique optical and electronic characteristi...Ga_(2)O_(3)has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost.Although semiconductor microwires(MWs)possess unique optical and electronic characteristics,the performances of photodetectors developed from Ga_(2)O_(3)MWs are still less than satisfactory.Herein,we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga_(2)O_(3)MWs,possessing a light/dark current ratio of 107 and a responsivity of 2,409 A/W at 40 V.Moreover,a 1×10 solar-blind photodetector linear array is developed based on the Sn-doped Ga_(2)O_(3)MWs via a patternedelectrodes method.And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solarblind imaging system.The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga_(2)O_(3)MWs,and thus may push forward their future applications.展开更多
In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various a...In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications.This study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga_(2)O_(3) (InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga_(2)O_(3) through the plasmonenhanced chemical vapor deposition(PECVD)technique.Subsequently,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process.The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons.This process is facilitated by non-radiative decay processes induced by PtNPs.Notably,the array achieves maximum responsivity(R)of 353 mA/W,external quantum efficiency(EQE)of 173%,detectivity(D*)of approximately 10~(13)Jones,and photoconductive gain of 1.58.In addition,the standard deviation for photocurrent stays below17%for more than 80%of the array units within the array.Subsequently,the application of this array extends to photon detection in the deep-UV(DUV)range.This includes critical areas such as imaging sensing and water quality monitoring.By leveraging surface plasmon coupling,the array achieves high-performance DUV photon detection.This approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of DUV detectors.展开更多
The vacuum-ultraviolet(VUV,10200 nm)imaging photodetector(PD)based on the wide bandgap semiconductor(WBGS)can realize a more detailed observation of solar storms than the silicon ones.Here,an 8×8 VUV PD array bas...The vacuum-ultraviolet(VUV,10200 nm)imaging photodetector(PD)based on the wide bandgap semiconductor(WBGS)can realize a more detailed observation of solar storms than the silicon ones.Here,an 8×8 VUV PD array based on the semiconductor AlN with an ultra-wide bandgap is presented,exhibiting the shortest cutoff wavelength(203 nm)reported so far.The PD array with a Pt/AlN/SiC/Ti/Au photovoltaic structure shows an excellent selective response to VUV light,an extremely low dark current density of 2.85×10^(11)A・cm^(-2)@-2 V,a responsivity of 0.054 A・W^(-1)@0 V and an ultra-short rise time of 13 ns.Also,the clear boundaries and an obvious contrast between light and dark of the VUV image displayed in the imaging measurement indicate the good imaging ability of this PD array,which can be used for the imaging application with high signal-to-noise ratio and high response speed.These results provide rich experience for the development of VUV imaging PDs based on WBGSs both in their fabrication and the practical applications in VUV detection.展开更多
As the large single-crystalline silicon wafers have revolutionized many industries including electronics and solar cells, it is envisioned that the availability of large single-crystalline perovskite crystals and wafe...As the large single-crystalline silicon wafers have revolutionized many industries including electronics and solar cells, it is envisioned that the availability of large single-crystalline perovskite crystals and wafers will revolutionize its broad applications in photovoltaics, optoelectronics, lasers, photodetectors, light emitting diodes(LEDs), etc. Here we report a method to grow large single-crystalline perovskites including single-halide crystals: CH3NH3PbX3(X=I, Br, Cl), and dual-halide ones:CH3NH3Pb(ClxBr1.x)3 and CH3NH3Pb(BrxI1.x)3, with the largest crystal being 120 mm in length. Meanwhile, we have advanced a process to slice the large perovskite crystals into thin wafers. It is found that the wafers exhibit remarkable features:(1)its trap-state density is a million times smaller than that in the microcrystalline perovskite thin films(MPTF);(2) its carrier mobility is 410 times higher than its most popular organic counterpart P3HT;(3) its optical absorption is expanded to as high as910 nm comparing to 797 nm for the MPTF;(4) while MPTF decomposes at 150 °C, the wafer is stable at high temperature up to270 °C;(5) when exposed to high humidity(75% RH), MPTF decomposes in 5 h while the wafer shows no change for overnight;(6) its photocurrent response is 250 times higher than its MPTF counterpart. A few electronic devices have been fabricated using the crystalline wafers. Among them, the Hall test gives low carrier concentration with high mobility. The trap-state density is measured much lower than common semiconductors. Moreover, the large SC-wafer is found particularly useful for mass production of integrated circuits. By adjusting the halide composition, both the optical absorption and the light emission can be fine-tuned across the entire visible spectrum from 400 nm to 800 nm. It is envisioned that a range of visible lasers and LEDs may be developed using the dual-halide perovskites. With fewer trap states, high mobility, broader absorption, and humidity resistance, it is expected that solar cells with high stable efficiency maybe attainable using the crystalline wafers.展开更多
基金support by the Key Research Project of Zhejiang Laboratory(N.O.2021PE0AC02)the National Natural Science Foundation of China(N.O.11674210)the Project of Hetao Shenzhen-Hong Kong Science and Technology Innovation Cooperation Zone(HZQB-KCZYB-2020083).
文摘Photodetectors with long detection distances and fast response are important media in constructing a non-contact human-machine interface for the Masterly Internet of Things(MIT).All-inorganic perovskites have excellent optoelectronic performance with high moisture and oxygen resistance,making them one of the promising candidates for high-performance photodetectors,but a simple,low-cost and reliable fabrication technology is urgently needed.Here,a dual-function laser etching method is developed to complete both the lyophilic split-ring structure and electrode patterning.This novel split-ring structure can capture the perovskite precursor droplet efficiently and achieve the uniform and compact deposition of CsPbBr3 films.Furthermore,our devices based on laterally conducting split-ring structured photodetectors possess outstanding performance,including the maximum responsivity of 1.44×105 mA W^(−1),a response time of 150μs in 1.5 kHz and one-unit area<4×10-2 mm2.Based on these split-ring photodetector arrays,we realized three-dimensional gesture detection with up to 100 mm distance detection and up to 600 mm s^(−1) speed detection,for low-cost,integrative,and non-contact human-machine interfaces.Finally,we applied this MIT to wearable and flexible digital gesture recognition watch panel,safe and comfortable central controller integrated on the car screen,and remote control of the robot,demonstrating the broad potential applications.
基金Project supported by the National High Technology Research and Development Program of China(Grant Nos.2013AA031401,2015AA016902,and 2015AA016904)the National Natural Science Foundation of China(Grant Nos.61176053,61274069,and 61435002)the National Basic Research Program of China(Grant Nos.2012CB933503 and 2013CB932904)
文摘We have provided optical simulations of the evanescently coupled waveguide photodiodes integrated with a 13- channels AWGs. The photodiode could exhibit high internal efficiency by appropriate choice of layers geometry and refrac- tive index. Aseamless joint structure has been designed and fabricated for integrating the output waveguides of AWGs with the evanescently coupled waveguide photodiode array. The highest simulation quantum efficiency could achieve 92% when the matching layer thickfiess of the PD is 120 nm and the insertion length is 2 μm. The fabricated PD with 320-nm-thick match.ing layer and 2-μm-length insertion matching layer present a responsivity of 0.87 A/W.
基金Supported by the High-Tech Research and Development Program of China under Grant Nos 2013AA031401,2015AA016902 and 2015AA016904the National Natural Science Foundation of China under Grant Nos 61176053,61274069 and 61435002the National Basic Research Program of China under Grant No 2012CB933503
文摘We design and fabricate a parallel system with 10 high speed side-illuminated evanescently coupled waveguide photodetectors （ECPDs）. The 10 ECPDs exhibit a uniform 3dB bandwidth of 20 GHz and low dark current of about i nA at 2 V reverse bias. The 10 ECPDs also exhibit uniform photo-responsivity of about 0.23A/W with an active region of 5 × 25μmS. The photodetector array has a total bandwidth of more than 200 GHz and can be integrated with other optoelectronic devices.
基金Project supported by the National Natural Science Foundation of China(Grant No.61774019)Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(Grant Nos.XK1060921115 and XK1060921002)。
文摘A 4×4 beta-phase gallium oxide(β-Ga_(2)O_(3))deep-ultraviolet(DUV)rectangular 10-fingers interdigital metalsemiconductor-metal(MSM)photodetector array of high photo responsivity is introduced.The Ga2O_(3)thin film is prepared through the metalorganic chemical vapor deposition technique,then used to construct the photodetector array via photolithography,lift-off,and ion beam sputtering methods.The one photodetector cell shows dark current of 1.94 p A,phototo-dark current ratio of 6×10_(7),photo responsivity of 634.15 A·W^(-1),specific detectivity of 5.93×1011cm·Hz1/2·W^(-1)(Jones),external quantum efficiency of 310000%,and linear dynamic region of 108.94 d B,indicating high performances for DUV photo detection.Furthermore,the 16-cell photodetector array displays uniform performances with decent deviation of 19.6%for photo responsivity.
基金supported by the National Key R&D Program of China(Grant No.2022YFB3605404)the National Natural Science Foundation of China(Grant No.62204125)+2 种基金the Open Fund of Key Laboratory of Aerospace Information Materials and Physics(NUAA)MIITthe Natural Science Research Start-up Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications(Grant Nos.XK1060921115XK1060921002)。
文摘In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing application.The 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;and the photodetector array was fabricated through ultraviolet photolithography,lift-off,and electron-beam evaporation.In addition to the high solar-blind/visible rejection ratio of 104,every photodetector cell in the array has high performance and fast response speed,such as responsivity of 49.4 A W^(-1),specific detectivity of 6.8×10^(14)Jones,external quantum efficiency of 1.9×10^(4)%,linear dynamic range of 117.8 d B,and response time of 41 ms,respectively,indicating the high photo-response performance of the photodetector.Moreover,the photodetector array displayed uniform responsivity with a standard deviation of~6%,and presented a sensing image of low chromatic aberration,owing to the high resolution of the photodetector array.In a word,this work may contribute to developing Ga_(2)O_(3)-based optoelectronic device applications.
基金the National Natural Science Foundation of China(Nos.61804136,U1804155,and 62027816).
文摘Ga_(2)O_(3)has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost.Although semiconductor microwires(MWs)possess unique optical and electronic characteristics,the performances of photodetectors developed from Ga_(2)O_(3)MWs are still less than satisfactory.Herein,we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga_(2)O_(3)MWs,possessing a light/dark current ratio of 107 and a responsivity of 2,409 A/W at 40 V.Moreover,a 1×10 solar-blind photodetector linear array is developed based on the Sn-doped Ga_(2)O_(3)MWs via a patternedelectrodes method.And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solarblind imaging system.The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga_(2)O_(3)MWs,and thus may push forward their future applications.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFB3605404)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.62204125)+2 种基金the Joint Funds of the National Natural Science Foundation of China(Grant No.U23A20349)the Natural Science Research Start-up Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications(Grant Nos.XK1060921115 and XK1060921002)Postgraduate Research&Practice Innovation Program of Jiangsu Province(Grant No.SJCX23_0300)。
文摘In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications.This study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga_(2)O_(3) (InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga_(2)O_(3) through the plasmonenhanced chemical vapor deposition(PECVD)technique.Subsequently,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process.The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons.This process is facilitated by non-radiative decay processes induced by PtNPs.Notably,the array achieves maximum responsivity(R)of 353 mA/W,external quantum efficiency(EQE)of 173%,detectivity(D*)of approximately 10~(13)Jones,and photoconductive gain of 1.58.In addition,the standard deviation for photocurrent stays below17%for more than 80%of the array units within the array.Subsequently,the application of this array extends to photon detection in the deep-UV(DUV)range.This includes critical areas such as imaging sensing and water quality monitoring.By leveraging surface plasmon coupling,the array achieves high-performance DUV photon detection.This approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of DUV detectors.
基金supported by the National Natural Science Foundation of China(No.62374186)the Guangdong Natural Science Funds for Distinguished Young Scholars(No.2021B1515020105).
文摘The vacuum-ultraviolet(VUV,10200 nm)imaging photodetector(PD)based on the wide bandgap semiconductor(WBGS)can realize a more detailed observation of solar storms than the silicon ones.Here,an 8×8 VUV PD array based on the semiconductor AlN with an ultra-wide bandgap is presented,exhibiting the shortest cutoff wavelength(203 nm)reported so far.The PD array with a Pt/AlN/SiC/Ti/Au photovoltaic structure shows an excellent selective response to VUV light,an extremely low dark current density of 2.85×10^(11)A・cm^(-2)@-2 V,a responsivity of 0.054 A・W^(-1)@0 V and an ultra-short rise time of 13 ns.Also,the clear boundaries and an obvious contrast between light and dark of the VUV image displayed in the imaging measurement indicate the good imaging ability of this PD array,which can be used for the imaging application with high signal-to-noise ratio and high response speed.These results provide rich experience for the development of VUV imaging PDs based on WBGSs both in their fabrication and the practical applications in VUV detection.
基金supported by the National Key Research Project MOST (2016YFA0202400)the National Natural Science Foundation of China (61604090, 61604091, 61674098)+4 种基金National University Research Fund (GK261001009, GK201603107)the Changjiang Scholar and Innovative Research Team (IRT_14R33)the 111 Project (B14041)the Chinese National 1000-talent-plan Program (1110010341)the Innovation Funds of Graduate Programs, SNNU (2015CXS047)
文摘As the large single-crystalline silicon wafers have revolutionized many industries including electronics and solar cells, it is envisioned that the availability of large single-crystalline perovskite crystals and wafers will revolutionize its broad applications in photovoltaics, optoelectronics, lasers, photodetectors, light emitting diodes(LEDs), etc. Here we report a method to grow large single-crystalline perovskites including single-halide crystals: CH3NH3PbX3(X=I, Br, Cl), and dual-halide ones:CH3NH3Pb(ClxBr1.x)3 and CH3NH3Pb(BrxI1.x)3, with the largest crystal being 120 mm in length. Meanwhile, we have advanced a process to slice the large perovskite crystals into thin wafers. It is found that the wafers exhibit remarkable features:(1)its trap-state density is a million times smaller than that in the microcrystalline perovskite thin films(MPTF);(2) its carrier mobility is 410 times higher than its most popular organic counterpart P3HT;(3) its optical absorption is expanded to as high as910 nm comparing to 797 nm for the MPTF;(4) while MPTF decomposes at 150 °C, the wafer is stable at high temperature up to270 °C;(5) when exposed to high humidity(75% RH), MPTF decomposes in 5 h while the wafer shows no change for overnight;(6) its photocurrent response is 250 times higher than its MPTF counterpart. A few electronic devices have been fabricated using the crystalline wafers. Among them, the Hall test gives low carrier concentration with high mobility. The trap-state density is measured much lower than common semiconductors. Moreover, the large SC-wafer is found particularly useful for mass production of integrated circuits. By adjusting the halide composition, both the optical absorption and the light emission can be fine-tuned across the entire visible spectrum from 400 nm to 800 nm. It is envisioned that a range of visible lasers and LEDs may be developed using the dual-halide perovskites. With fewer trap states, high mobility, broader absorption, and humidity resistance, it is expected that solar cells with high stable efficiency maybe attainable using the crystalline wafers.
