This paper proposes an area-saving dual-path loop filter（LPF）for low-voltage integrated phase-locked loops（PLLs）.With this LPF,output current of the lowpass-path charge-pump（CP）is B times（B〉1）as great as that...This paper proposes an area-saving dual-path loop filter（LPF）for low-voltage integrated phase-locked loops（PLLs）.With this LPF,output current of the lowpass-path charge-pump（CP）is B times（B〉1）as great as that of the integration-path CP.By adding voltages across these two paths,the zero-capacitance is magnified B times equivalently.As a result,the chip size is greatly reduced.Based on this LPF,a 1.2 V 3.5 GHz-band PLL is fabricated in SMIC 0.18μm RFCMOS technology.Its zero-capacitance is only 1/30 of that in conventional second-order LPFs. Measured data show that,at a frequency of 3.20 GHz,phase noise is–120.2 dBc/Hz at 1 MHz offset,reference spur is–72 dBc,and power is 24 mW.展开更多
An area-saving and high power efficiency charge pump is proposed, and methods for optimizing the operation frequency and improving the power efficiency are discussed. Through sharing coupling capacitors the proposed c...An area-saving and high power efficiency charge pump is proposed, and methods for optimizing the operation frequency and improving the power efficiency are discussed. Through sharing coupling capacitors the proposed charge pump realizes two DC-DC functions in one circuit, which can generate both positive and negative high voltages. Due to sharing of the coupling capacitors, as compared with a previous charge pump designed by us for a TFT-LCD driver IC, the die area and the amounts of necessary external capacitors are reduced by 40% and 33%, respectively. Furthermore, the charge pump＇s power efficiency is improved by 8% as a result of employing the new topology. The designed circuit has been successfully applied in a one-chip TFT-LCD driver IC implemented in a 0.18 μm low/mid/high mixed-voltage CMOS process.展开更多
文摘This paper proposes an area-saving dual-path loop filter（LPF）for low-voltage integrated phase-locked loops（PLLs）.With this LPF,output current of the lowpass-path charge-pump（CP）is B times（B〉1）as great as that of the integration-path CP.By adding voltages across these two paths,the zero-capacitance is magnified B times equivalently.As a result,the chip size is greatly reduced.Based on this LPF,a 1.2 V 3.5 GHz-band PLL is fabricated in SMIC 0.18μm RFCMOS technology.Its zero-capacitance is only 1/30 of that in conventional second-order LPFs. Measured data show that,at a frequency of 3.20 GHz,phase noise is–120.2 dBc/Hz at 1 MHz offset,reference spur is–72 dBc,and power is 24 mW.
基金Project supported by the National High Technology Research and Development Program of China (No.2005AA1Z1193)
文摘An area-saving and high power efficiency charge pump is proposed, and methods for optimizing the operation frequency and improving the power efficiency are discussed. Through sharing coupling capacitors the proposed charge pump realizes two DC-DC functions in one circuit, which can generate both positive and negative high voltages. Due to sharing of the coupling capacitors, as compared with a previous charge pump designed by us for a TFT-LCD driver IC, the die area and the amounts of necessary external capacitors are reduced by 40% and 33%, respectively. Furthermore, the charge pump＇s power efficiency is improved by 8% as a result of employing the new topology. The designed circuit has been successfully applied in a one-chip TFT-LCD driver IC implemented in a 0.18 μm low/mid/high mixed-voltage CMOS process.
