Currently,the synthesis of nanostructures still encounters two grand challenges:one is the often-required high temperatures and/or high pressures,and the other is the scalable fabrication.Here,to break through such bo...Currently,the synthesis of nanostructures still encounters two grand challenges:one is the often-required high temperatures and/or high pressures,and the other is the scalable fabrication.Here,to break through such bottlenecks,we demonstrate an ambient-condition strategy for rapid mass production of fourthgeneration semiconductor Ga_(2)O_(3)nanoarchitectures assembled by single-crystalline nanosheets in a controlled manner based on sonochemistry.Their growth is fundamentally determined by the introduced ethanediamine in rationally designed source materials,which could not only protect the metal Ga against reacting with H_(2)O into GaOOH,but facilitate the reaction of Ga with OH·radicals for target crystalline Ga_(2)O_(3)nanostructures.As a proof of concept for applications,the as-fabricated Ga_(2)O_(3)nanoarchitectures exhibit superb performances for electromagnetic wave absorption with a reflection loss value of 52.2 dB at 8.1 GHz,and ammonia sensing with high sensitivity and selectivity at room temperature,representing their bright future to be commercially applied in modern devices.展开更多
Ferroelectrics are a type of material with a polar structure and their polarization direction can be inverted reversibly by applying an electric field.They have attracted tremendous attention for their extensive appli...Ferroelectrics are a type of material with a polar structure and their polarization direction can be inverted reversibly by applying an electric field.They have attracted tremendous attention for their extensive applications in non-volatile memory,sensors and neuromorphic computing.However,conventional ferroelectric materials face insulating and interfacial issues in the commercialization process.In contrast,two-dimensional(2D)ferroelectric materials usually have excellent semiconductor performance,clean van der Waals interfaces and robust ferroelectric order in atom-thick layers,and hold greater promise for constructing multifunctional ferroelectric optoelectronic devices and nondestructive ultra-high-density memory.Recently,2D ferroelectrics have obtained impressive breakthroughs,showing overwhelming superiority.Herein,firstly,the progress of experimental research on 2D ferroelectric materials is reviewed.Then,the preparation of 2D ferroelectric devices and their applications are discussed.Finally,the future development trend of 2D ferroelectrics is looked at.展开更多
Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications.State of the art in the field is currently a two-st...Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications.State of the art in the field is currently a two-step process:a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition(CVD)followed by delicate layer transfer onto device-relevant substrates.Here,we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation to directly synthesize large area,high quality,and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer process.Carbon(C)ion implantation was performed on Cu-Ni film deposited on a variety of device-relevant substrates.A well-controlled number of layers of graphene,primarily monolayer and bilayer,is precisely controlled by the equivalent fluence of the implanted C-atoms(1 monolayer~4×10^(15)C-atoms/cm^(2)).Upon thermal annealing to promote Cu-Ni alloying,the pre-implanted C-atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu.As a result,the expelled C-atoms precipitate into a graphene structure at the interface facilitated by the Cu-like alloy catalysis.After removing the alloyed Cu-like surface layer,the layer-tunable graphene on the desired substrate is directly realized.The layer-selectivity,high quality,and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films.Molecular dynamics(MD)simulations using the reactive force field(ReaxFF)were performed to elucidate the graphene formation mechanisms in this novel synthesis approach.With the wide use of ion implantation technology in the microelectronics industry,this novel graphene synthesis approach with precise layer-tunability and transfer-free processing has the promise to advance efficient graphene-device manufacturing and expedite their versatile applications in many fields.展开更多
0 Introduction Fifteen years have passed since the first AlGaN/GaN HFET was reported in 1993.The FETs have already commercialized as microwave power devices,but volume production has not yet realized.The main applicat...0 Introduction Fifteen years have passed since the first AlGaN/GaN HFET was reported in 1993.The FETs have already commercialized as microwave power devices,but volume production has not yet realized.The main application field is mobile phone base stations.For such applications,GaAs power transistors and silicon LDMOS have already been used.Therefore,advantages compared with these existing devices will be required,such as high efficiency,low distortion,low noise,high reliability and,especially,low cost.However,the latter two items are normally difficult for devices using new materials.展开更多
Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick ...Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick films and integrating them on the silicon substrate as electronic and MEMS devices is a very attractive research area and challenging. In this paper, we report our research works on ferroelectric MEMS and ferroelectric films for electronic device applications. Pyroelectric thin film infrared sensors have been made, characterized, and a 32×32 array with its size of 1cm×1cm has been obtained on Si membrane. Ferroelectric thin films in amorphous phase have been applied to make silicon based hydrogen gas sensors with the metal/amorphous ferroelectric film/metal device structure, and its turn-on voltage of about 4.5V at ～1000 ppm in air is about 7 times of the best value reported in the literature. For the application of electron emission flat panel display, ferroelectric BST thin films with excess Ti concentrations have been coated on Si tips, the threshold voltage of those ferroelectric film coated tips has been reduced about one order from ～70 V/μm to 4～10 V/μm for different Ti concentrations, and however, the electron emission current density has been increased at least 3～4 order for those coated tips compared to that of the bare Si tips. To fulfill in the thickness gap between thin film of typical ～1 μm made by PVD/CVD and polished ceramic wafer of ～50 μm from the bulk, piezoelectric films with thickness in a range of 1～30 μm have been successfully deposited on Si substrate at a low temperature of 650oC by a novel hybridized deposition technique, and piezoelectric MEMS ultrasonic arrays have been very recently obtained with the sound pressure level up to ～120 dB. More detailed results will be presented and mechanisms will be discussed.展开更多
With the aim of creating biodegradable materials for medical devices clinical appointments with high hemocompatibility we have developed a new polymer product.The basis of this product is plasticized by polyethylene g...With the aim of creating biodegradable materials for medical devices clinical appointments with high hemocompatibility we have developed a new polymer product.The basis of this product is plasticized by polyethylene glycol bacterial copolymer of hydroxybutyrate and oxovalerate. A well-known antitbrombotic supplement--acetylsalicylic acid has been added to improve hemocompatibility in the polymer. The results of our studies showed a controlled prolonged separation of acetylsalicylic acid from polymeric material in the blood. We studied in vitro the dynamics of liberation of acetylsalicylic acid from polymeric coatings. It was shown that the concentration of polyethylene glycol and the thickness of the polymer layer can affect the rate of diffusion of acetylsalicylic acid from polymer films.展开更多
Two-dimensional(2D)materials,such as transition metal dichalcogenides(TMDs),black phosphorus(BP),MXene and borophene,have aroused extensive attention since the discovery of graphene in 2004.They have wide range of app...Two-dimensional(2D)materials,such as transition metal dichalcogenides(TMDs),black phosphorus(BP),MXene and borophene,have aroused extensive attention since the discovery of graphene in 2004.They have wide range of applications in many research fields,such as optoelectronic devices,energy storage,catalysis,owing to their striking physical and chemical properties.Among them,anisotropic 2D material is one kind of 2D materials that possess different properties along different directions caused by the intrinsic anisotropic atoms5 arrangement of the 2D materials,mainly including BP,borophene,low-symmetry TMDs(ReSe2 and ReSa)and group IV monochalcogenides(SnS,SnSe,GeS,and GeSe).Recently,a series of new devices has been fabricated based on these anisotropic 2D materials.In this review,we start from a brief introduction of the classifications,crystal structures,preparation techniques,stability,as well as the strategy to discriminate the anisotropic characteristics of 2D materials.Then,the recent advanced applications including electronic devices,optoelectronic devices,thermoelectric devices and nanomechanical devices based on the anisotropic 2D materials both in experiment and theory have been summarized.Finally,the current challenges and prospects in device designs,integration,mechanical analysis,and micro-/nano-fabrication techniques related to anisotropic 2D materials have been discussed.This review is aimed to give a generalized knowledge of anisotropic 2D materials and their current devices applications,and thus inspiring the exploration and development of other kinds of new anisotropic 2D materials and various novel device applications.展开更多
We review the state of the art and our perspectives on silicon and hybrid silicon photonic devices for optical interconnects in datacenters. After a brief discussion of the key requirements for intra-datacenter optica...We review the state of the art and our perspectives on silicon and hybrid silicon photonic devices for optical interconnects in datacenters. After a brief discussion of the key requirements for intra-datacenter optical interconnects, we propose a wavelength-division-multiplexing(WDM)-based optical interconnect for intra-datacenter applications. Following our proposed interconnects configuration, the bulk of the review emphasizes recent developments concerning on-chip hybrid silicon microlasers and WDM transmitters, and silicon photonic switch fabrics for intra-datacenters. For hybrid silicon microlasers and WDM transmitters, we outline the remaining challenges and key issues toward realizing low power consumption, direct modulation, and integration of multiwavelength microlaser arrays. For silicon photonic switch fabrics, we review various topologies and configurations of high-port-count N-by-N switch fabrics using Mach–Zehnder interferometers and microring resonators as switch elements, and discuss their prospects toward practical implementations with active reconfiguration.For the microring-based switch fabrics, we review recent developments of active stabilization schemes at the subsystem level. Last, we outline several large challenges and problems for silicon and hybrid silicon photonics to meet for intra-datacenter applications and propose potential solutions.展开更多
Flexible electronics technology is considered as a revolutionary technology to unlock the bottleneck of traditional rigid electronics that prevalent for decades,thereby fueling the next-generation electronics.In the p...Flexible electronics technology is considered as a revolutionary technology to unlock the bottleneck of traditional rigid electronics that prevalent for decades,thereby fueling the next-generation electronics.In the past few decades,the research on flexible electronic devices based on organic materials has witnessed rapid development and substantial achievements,and inorganic semiconductors are also now beginning to shine in the field of flexible electronics.As validated by the latest research,some of the inorganic semiconductors,particularly those at low dimension,unexpectedly exhibited excellent mechanical flexibility on top of superior electrical properties.Herein,we bring together a comprehensive analysis on the recently burgeoning low-dimension inorganic semiconductor materials in flexible electronics,including one-dimensional(1D)inorganic semiconductor nanowires(NWs)and two-dimensional(2D)transition metal dichalcogenides(TMDs).The fundamental electrical properties,optical properties,mechanical properties and strain engineering of materials,and their performance in flexible device applications are discussed in detail.We also propose current challenges and predict future development directions including material synthesis and device fabrication and integration.展开更多
Remarkable progresses have been made in developing special polymer optical fibres and devices for photonic applications in recent years. This presentation will mainly report on the development of electro-optic, photos...Remarkable progresses have been made in developing special polymer optical fibres and devices for photonic applications in recent years. This presentation will mainly report on the development of electro-optic, photosensitive and photorefractive polymer optical fibres and related devices.展开更多
In this paper, we present the finding that periodic structural defects(PSDs) along a Bragg grating can shift the Bragg wavelength. This effect is theoretically analyzed and confirmed by numerical calculation. We find ...In this paper, we present the finding that periodic structural defects(PSDs) along a Bragg grating can shift the Bragg wavelength. This effect is theoretically analyzed and confirmed by numerical calculation. We find that the Bragg wavelength shift is determined by the defect size and the period of the defects. The Bragg wavelength can be well tuned by properly designing the PSDs, and this may provide an alternative method to fabricate grating-based multiwavelength devices, including optical filter arrays and laser arrays. In regards to wavelength precision, the proposed method has an advantage over the traditional methods, where the Bragg wavelengths are changed directly by changing the grating period. In addition, the proposed method can maintain grating strength when tuning the wavelength since only the period of defects is changed. This will be a benefit for devices such as arrays.展开更多
A metallic nanostructured array that scatters radiation toward a thin metallic layer generates surface plasmon resonances for normally incident light. The location of the minimum of the spectral reflectivity serves to...A metallic nanostructured array that scatters radiation toward a thin metallic layer generates surface plasmon resonances for normally incident light. The location of the minimum of the spectral reflectivity serves to detect changes in the index of refraction of the medium under analysis. The normal incidence operation eases its integration with optical fibers. The geometry of the arrangement and the material selection are changed to optimize some performance parameters as sensitivity, figure of merit, field enhancement, and spectral width. This optimization takes into account the feasibility of the fabrication. The evaluated results of sensitivity(1020 nm/RIU)and figure of merit(614 RIU^(-1)) are competitive with those previously reported.展开更多
Layered two-dimensional(2D)materials have garnered marvelous attention in diverse fields,including sensors,capacitors,nanocomposites and transistors,owing to their distinctive structural morphologies and superior phys...Layered two-dimensional(2D)materials have garnered marvelous attention in diverse fields,including sensors,capacitors,nanocomposites and transistors,owing to their distinctive structural morphologies and superior physicochemical properties.Recently,layered quasi-2D materials,especially layered bismuth oxyselenide(Bi2O2Se),are of particular interest,because of their different interlayer interactions from other layered 2D materials.On this basis,this material offers richer and more intriguing physics,including high electron mobility,sizeable bandgap,and remarkable thermal and chemical durability,rendering it an utterly prospective contender for use in advanced electronic and optoelectronic applications.Herein,this article reviews the recent advances related with Bi2O2Se.Initially,its structural characterization,band structure,and basic properties are briefly introduced.Further,the synthetic strategies for the preparation of Bi_(2)O_(2)Se are presented.Furthermore,the diverse applications of Bi2O2Se in the field of electronics and optoelectronics,photocatalytic,solar cells and sensing were summarized in detail.Ultimately,the challenges and future perspectives of Bi2O2Se are included.展开更多
Cutting fluid plays a cooling-lubrication role in the cutting of metal materials.However,the substantial usage of cutting fluid in traditional flood machining seriously pollutes the environment and threatens the healt...Cutting fluid plays a cooling-lubrication role in the cutting of metal materials.However,the substantial usage of cutting fluid in traditional flood machining seriously pollutes the environment and threatens the health of workers.Environmental machining technologies,such as dry cutting,minimum quantity lubrication(MQL),and cryogenic cooling technology,have been used as substitute for flood machining.However,the insufficient cooling capacity of MQL with normal-temperature compressed gas and the lack of lubricating performance of cryogenic cooling technology limit their industrial application.The technical bottleneck of mechanical-thermal damage of difficult-to-cut materials in aerospace and other fields can be solved by combining cryogenic medium and MQL.The latest progress of cryogenic minimum quantity lubrication(CMQL)technology is reviewed in this paper,and the key scientific issues in the research achievements of CMQL are clarified.First,the application forms and process characteristics of CMQL devices in turning,milling,and grinding are systematically summarized from traditional settings to innovative design.Second,the cooling-lubrication mechanism of CMQL and its influence mechanism on material hardness,cutting force,tool wear,and workpiece surface quality in cutting are extensively revealed.The effects of CMQL are systematically analyzed based on its mechanism and application form.Results show that the application effect of CMQL is better than that of cryogenic technology or MQL alone.Finally,the prospect,which provides basis and support for engineering application and development of CMQL technology,is introduced considering the limitations of CMQL.展开更多
Two-dimensional(2D)transition metal dichalcogenides(TMDs)with fascinating electronic energy band structures,rich valley physical properties and strong spin–orbit coupling have attracted tremendous interest,and show g...Two-dimensional(2D)transition metal dichalcogenides(TMDs)with fascinating electronic energy band structures,rich valley physical properties and strong spin–orbit coupling have attracted tremendous interest,and show great potential in electronic,optoelectronic,spintronic and valleytronic fields.Stacking 2D TMDs have provided unprecedented opportunities for constructing artificial functional structures.Due to the low cost,high yield and industrial compatibility,chemical vapor deposition(CVD)is regarded as one of the most promising growth strategies to obtain high-quality and large-area 2D TMDs and heterostructures.Here,state-of-the-art strategies for preparing TMDs details of growth control and related heterostructures construction via CVD method are reviewed and discussed,including wafer-scale synthesis,phase transition,doping,alloy and stacking engineering.Meanwhile,recent progress on the application of multi-functional devices is highlighted based on 2D TMDs.Finally,challenges and prospects are proposed for the practical device applications of 2D TMDs.展开更多
The discovery of the quantum Hall effect in the presence of a relatively strong magnetic field has profoundly inspired the study of topological phase of matter[1],[2],[3],which not only deepens our understanding of co...The discovery of the quantum Hall effect in the presence of a relatively strong magnetic field has profoundly inspired the study of topological phase of matter[1],[2],[3],which not only deepens our understanding of condensed materials beyond the scope of symmetry breaking but also holds significant promise in device application with low or even vanishing energy dissipation.In principle,since the role of magnetic field can be completely replaced by magnetic ordering,quantum Hall effect and its anomalous counterpart,termed quantum anomalous Hall effect(QAHE),typically appear as complementary pair.展开更多
Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications.Here we review recent results on the Raman spectroscopy and imaging of graphene.We show ...Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications.Here we review recent results on the Raman spectroscopy and imaging of graphene.We show that Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers.The strong Raman signal of single layer graphene compared to graphite is explained by an interference enhancement model.We have also studied the effect of substrates,the top layer deposition,the annealing process,as well as folding(stacking order)on the physical and electronic properties of graphene.Finally,Raman spectroscopy of epitaxial graphene grown on a SiC substrate is presented and strong compressive strain on epitaxial graphene is observed.The results presented here are highly relevant to the application of graphene in nano-electronic devices and help in developing a better understanding of the physical and electronic properties of graphene.展开更多
The fast booming of wearable electronics provides great opportunities for intelligent gas detection with improved healthcare of mining workers,and a variety of gas sensors have been simultaneously developed.However,th...The fast booming of wearable electronics provides great opportunities for intelligent gas detection with improved healthcare of mining workers,and a variety of gas sensors have been simultaneously developed.However,these sensing systems are always limited to single gas detection and are highly susceptible to the inference of ubiquitous moisture,resulting in less accuracy in the analysis of gas compositions in real mining conditions.To address these challenges,we propose a synergistic strategy based on sensor integration and machine learning algorithms to realize precise NH_(3) and NO_(2) gas detections under real mining conditions.A wearable sensing array based on the graphene and polyaniline composite is developed to largely enhance the sensitivity and selectivity under mixed gas conditions.Further introduction of backpropagation neural network(BP-NN)and partial least squares(PLS)algorithms could improve the accuracy of gas identification and concentration prediction and settle the inference of moisture,realizing over 99%theoretical prediction level on NH_(3) and NO_(2) concentrations within a wide relative humidity range,showing great promise in real mining detection.As proof of concept,a wireless wearable bracelet,integrated with sensing arrays and machine-learning algorithms,is developed for wireless real-time warning of hazardous gases in mines under different humidity conditions.展开更多
基金Top Talent Project of Ningbo Municipal Government,National Natural Science Foundation of China(No.51972178)。
文摘Currently,the synthesis of nanostructures still encounters two grand challenges:one is the often-required high temperatures and/or high pressures,and the other is the scalable fabrication.Here,to break through such bottlenecks,we demonstrate an ambient-condition strategy for rapid mass production of fourthgeneration semiconductor Ga_(2)O_(3)nanoarchitectures assembled by single-crystalline nanosheets in a controlled manner based on sonochemistry.Their growth is fundamentally determined by the introduced ethanediamine in rationally designed source materials,which could not only protect the metal Ga against reacting with H_(2)O into GaOOH,but facilitate the reaction of Ga with OH·radicals for target crystalline Ga_(2)O_(3)nanostructures.As a proof of concept for applications,the as-fabricated Ga_(2)O_(3)nanoarchitectures exhibit superb performances for electromagnetic wave absorption with a reflection loss value of 52.2 dB at 8.1 GHz,and ammonia sensing with high sensitivity and selectivity at room temperature,representing their bright future to be commercially applied in modern devices.
基金Project supported by the National Key Research and Development Program of China (Grant No.2022YFB3505301)the National Natural Science Foundation of China (Grant Nos.12241403 and12174237)the Graduate Education Innovation Project in Shanxi Province (Grant No.2021Y484)。
文摘Ferroelectrics are a type of material with a polar structure and their polarization direction can be inverted reversibly by applying an electric field.They have attracted tremendous attention for their extensive applications in non-volatile memory,sensors and neuromorphic computing.However,conventional ferroelectric materials face insulating and interfacial issues in the commercialization process.In contrast,two-dimensional(2D)ferroelectric materials usually have excellent semiconductor performance,clean van der Waals interfaces and robust ferroelectric order in atom-thick layers,and hold greater promise for constructing multifunctional ferroelectric optoelectronic devices and nondestructive ultra-high-density memory.Recently,2D ferroelectrics have obtained impressive breakthroughs,showing overwhelming superiority.Herein,firstly,the progress of experimental research on 2D ferroelectric materials is reviewed.Then,the preparation of 2D ferroelectric devices and their applications are discussed.Finally,the future development trend of 2D ferroelectrics is looked at.
基金supported by the National Key R&D Program of China(No.2022YFA1203400)the National Natural Science Foundation of China under Grant(Nos.62174093 and 12075307)+7 种基金the Ningbo Youth Science and Technology Innovation Leading Talent Project under Grant(No.2023QL006)the Open Research Fund of China National Key Laboratory of Materials for Integrated Circuits(No.NKLJC-K2023-01)Guangdong Basic and Applied Basic Research Foundation(No.2022A1515110628)the support by LDRD Seedling ER project at Los Alamos National Laboratory,NM,USA(No.20210867ER)partially supported by Guangdong Provincial Key Laboratory of Computational Science and Material Design(No.2019B030301001)supported by Center for Computational Science and Engineering at Southern University of Science and TechnologyShanghai Rising-Star Program(No.21QA1410900)the support from the Youth Innovation Promotion Association CAS
文摘Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications.State of the art in the field is currently a two-step process:a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition(CVD)followed by delicate layer transfer onto device-relevant substrates.Here,we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation to directly synthesize large area,high quality,and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer process.Carbon(C)ion implantation was performed on Cu-Ni film deposited on a variety of device-relevant substrates.A well-controlled number of layers of graphene,primarily monolayer and bilayer,is precisely controlled by the equivalent fluence of the implanted C-atoms(1 monolayer~4×10^(15)C-atoms/cm^(2)).Upon thermal annealing to promote Cu-Ni alloying,the pre-implanted C-atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu.As a result,the expelled C-atoms precipitate into a graphene structure at the interface facilitated by the Cu-like alloy catalysis.After removing the alloyed Cu-like surface layer,the layer-tunable graphene on the desired substrate is directly realized.The layer-selectivity,high quality,and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films.Molecular dynamics(MD)simulations using the reactive force field(ReaxFF)were performed to elucidate the graphene formation mechanisms in this novel synthesis approach.With the wide use of ion implantation technology in the microelectronics industry,this novel graphene synthesis approach with precise layer-tunability and transfer-free processing has the promise to advance efficient graphene-device manufacturing and expedite their versatile applications in many fields.
文摘0 Introduction Fifteen years have passed since the first AlGaN/GaN HFET was reported in 1993.The FETs have already commercialized as microwave power devices,but volume production has not yet realized.The main application field is mobile phone base stations.For such applications,GaAs power transistors and silicon LDMOS have already been used.Therefore,advantages compared with these existing devices will be required,such as high efficiency,low distortion,low noise,high reliability and,especially,low cost.However,the latter two items are normally difficult for devices using new materials.
文摘Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick films and integrating them on the silicon substrate as electronic and MEMS devices is a very attractive research area and challenging. In this paper, we report our research works on ferroelectric MEMS and ferroelectric films for electronic device applications. Pyroelectric thin film infrared sensors have been made, characterized, and a 32×32 array with its size of 1cm×1cm has been obtained on Si membrane. Ferroelectric thin films in amorphous phase have been applied to make silicon based hydrogen gas sensors with the metal/amorphous ferroelectric film/metal device structure, and its turn-on voltage of about 4.5V at ～1000 ppm in air is about 7 times of the best value reported in the literature. For the application of electron emission flat panel display, ferroelectric BST thin films with excess Ti concentrations have been coated on Si tips, the threshold voltage of those ferroelectric film coated tips has been reduced about one order from ～70 V/μm to 4～10 V/μm for different Ti concentrations, and however, the electron emission current density has been increased at least 3～4 order for those coated tips compared to that of the bare Si tips. To fulfill in the thickness gap between thin film of typical ～1 μm made by PVD/CVD and polished ceramic wafer of ～50 μm from the bulk, piezoelectric films with thickness in a range of 1～30 μm have been successfully deposited on Si substrate at a low temperature of 650oC by a novel hybridized deposition technique, and piezoelectric MEMS ultrasonic arrays have been very recently obtained with the sound pressure level up to ～120 dB. More detailed results will be presented and mechanisms will be discussed.
文摘With the aim of creating biodegradable materials for medical devices clinical appointments with high hemocompatibility we have developed a new polymer product.The basis of this product is plasticized by polyethylene glycol bacterial copolymer of hydroxybutyrate and oxovalerate. A well-known antitbrombotic supplement--acetylsalicylic acid has been added to improve hemocompatibility in the polymer. The results of our studies showed a controlled prolonged separation of acetylsalicylic acid from polymeric material in the blood. We studied in vitro the dynamics of liberation of acetylsalicylic acid from polymeric coatings. It was shown that the concentration of polyethylene glycol and the thickness of the polymer layer can affect the rate of diffusion of acetylsalicylic acid from polymer films.
基金the State Key Research Development Program of China(No.2019YFB2203503)the National Natural Science Foundation of China(Nos.61875138,61961136001,61435010,U1801254)+5 种基金the Guangdong Science Foundation for Distinguished Young Scholars(No.2018B030306038)the Science and Technology Innovation Com mission o f Shenzhen(Nos.JCYJ20180507182047316,KQJSCX20180328095501798,KQTD2015032416270385,GIHZ20180928160209731)the Natural Science Foundation of SZU(No.860-000002110429)the Educational Com mission of Guangdong Province(Nos.2016KCXTD006,2018KCXTD026)the Science and Technology Development Fund(Nos.007/2017/A1,132/2017/A3)Macao SAR,China.
文摘Two-dimensional(2D)materials,such as transition metal dichalcogenides(TMDs),black phosphorus(BP),MXene and borophene,have aroused extensive attention since the discovery of graphene in 2004.They have wide range of applications in many research fields,such as optoelectronic devices,energy storage,catalysis,owing to their striking physical and chemical properties.Among them,anisotropic 2D material is one kind of 2D materials that possess different properties along different directions caused by the intrinsic anisotropic atoms5 arrangement of the 2D materials,mainly including BP,borophene,low-symmetry TMDs(ReSe2 and ReSa)and group IV monochalcogenides(SnS,SnSe,GeS,and GeSe).Recently,a series of new devices has been fabricated based on these anisotropic 2D materials.In this review,we start from a brief introduction of the classifications,crystal structures,preparation techniques,stability,as well as the strategy to discriminate the anisotropic characteristics of 2D materials.Then,the recent advanced applications including electronic devices,optoelectronic devices,thermoelectric devices and nanomechanical devices based on the anisotropic 2D materials both in experiment and theory have been summarized.Finally,the current challenges and prospects in device designs,integration,mechanical analysis,and micro-/nano-fabrication techniques related to anisotropic 2D materials have been discussed.This review is aimed to give a generalized knowledge of anisotropic 2D materials and their current devices applications,and thus inspiring the exploration and development of other kinds of new anisotropic 2D materials and various novel device applications.
基金financial support from the National Science Foundation of China (NSFC)the Research Grants Council (RGC) of the Hong Kong Special Administrative Region (HKSAR) under project N_HKUST606/10+5 种基金the State Key Laboratory on Integrated Optoelectronics, ChinaOpen Fund of the State Key Laboratory on Integrated Optoelectronics under project IOSKL2013KF04the Innovation and Technology Fund (ITF) of the HKSAR under project ITS/023/14 and ITS/087/13the Proof-of-Concept Fund (PCF) of The Hong Kong University of Science and Technology (HKUST) under project no. PCF007.12/13the General Research Fund (GRF) of the HKSAR under project no. 16208114postdoctoral fellowship support from the Hong Kong Scholars Program 2013
文摘We review the state of the art and our perspectives on silicon and hybrid silicon photonic devices for optical interconnects in datacenters. After a brief discussion of the key requirements for intra-datacenter optical interconnects, we propose a wavelength-division-multiplexing(WDM)-based optical interconnect for intra-datacenter applications. Following our proposed interconnects configuration, the bulk of the review emphasizes recent developments concerning on-chip hybrid silicon microlasers and WDM transmitters, and silicon photonic switch fabrics for intra-datacenters. For hybrid silicon microlasers and WDM transmitters, we outline the remaining challenges and key issues toward realizing low power consumption, direct modulation, and integration of multiwavelength microlaser arrays. For silicon photonic switch fabrics, we review various topologies and configurations of high-port-count N-by-N switch fabrics using Mach–Zehnder interferometers and microring resonators as switch elements, and discuss their prospects toward practical implementations with active reconfiguration.For the microring-based switch fabrics, we review recent developments of active stabilization schemes at the subsystem level. Last, we outline several large challenges and problems for silicon and hybrid silicon photonics to meet for intra-datacenter applications and propose potential solutions.
基金supported by the Natural Science Foundation of China(No.51902101)Natural Science Foundation of Jiangsu Province(No.BK20201381)+1 种基金Science Foundation of Nanjing University of Posts and Telecommunications(No.NY219144)Postgraduate Research&Practice Innovation Program of Jiangsu Province(No.SJCX22_0254).
文摘Flexible electronics technology is considered as a revolutionary technology to unlock the bottleneck of traditional rigid electronics that prevalent for decades,thereby fueling the next-generation electronics.In the past few decades,the research on flexible electronic devices based on organic materials has witnessed rapid development and substantial achievements,and inorganic semiconductors are also now beginning to shine in the field of flexible electronics.As validated by the latest research,some of the inorganic semiconductors,particularly those at low dimension,unexpectedly exhibited excellent mechanical flexibility on top of superior electrical properties.Herein,we bring together a comprehensive analysis on the recently burgeoning low-dimension inorganic semiconductor materials in flexible electronics,including one-dimensional(1D)inorganic semiconductor nanowires(NWs)and two-dimensional(2D)transition metal dichalcogenides(TMDs).The fundamental electrical properties,optical properties,mechanical properties and strain engineering of materials,and their performance in flexible device applications are discussed in detail.We also propose current challenges and predict future development directions including material synthesis and device fabrication and integration.
文摘Remarkable progresses have been made in developing special polymer optical fibres and devices for photonic applications in recent years. This presentation will mainly report on the development of electro-optic, photosensitive and photorefractive polymer optical fibres and related devices.
基金supported by the National Natural Science Foundation of China(Youth)(61306068)the Natural Science Foundation of Jiangsu Province of China(BK20130585,BK20140414)+1 种基金the National Natural Science Foundation of China(61435014,61504170,61504058)the National 863 Program(2015AA016902)
文摘In this paper, we present the finding that periodic structural defects(PSDs) along a Bragg grating can shift the Bragg wavelength. This effect is theoretically analyzed and confirmed by numerical calculation. We find that the Bragg wavelength shift is determined by the defect size and the period of the defects. The Bragg wavelength can be well tuned by properly designing the PSDs, and this may provide an alternative method to fabricate grating-based multiwavelength devices, including optical filter arrays and laser arrays. In regards to wavelength precision, the proposed method has an advantage over the traditional methods, where the Bragg wavelengths are changed directly by changing the grating period. In addition, the proposed method can maintain grating strength when tuning the wavelength since only the period of defects is changed. This will be a benefit for devices such as arrays.
基金Funding.Ministerio de Economía y Competitividad(MINECO)(TEC2013-40442)Ministry of Higher Education(MOHE)(missions section)
文摘A metallic nanostructured array that scatters radiation toward a thin metallic layer generates surface plasmon resonances for normally incident light. The location of the minimum of the spectral reflectivity serves to detect changes in the index of refraction of the medium under analysis. The normal incidence operation eases its integration with optical fibers. The geometry of the arrangement and the material selection are changed to optimize some performance parameters as sensitivity, figure of merit, field enhancement, and spectral width. This optimization takes into account the feasibility of the fabrication. The evaluated results of sensitivity(1020 nm/RIU)and figure of merit(614 RIU^(-1)) are competitive with those previously reported.
基金NSFC of China,Grant/Award Numbers:52072059,11774044Foundation of Sichuan Excellent Young Talents,Grant/Award Number:2021JDJQ0015+1 种基金Fundamental Research Funds for the Central Universities,Grant/Award Number:ZYGX2020J023ARC Future Fellowship,Grant/Award Number:FT160100205。
文摘Layered two-dimensional(2D)materials have garnered marvelous attention in diverse fields,including sensors,capacitors,nanocomposites and transistors,owing to their distinctive structural morphologies and superior physicochemical properties.Recently,layered quasi-2D materials,especially layered bismuth oxyselenide(Bi2O2Se),are of particular interest,because of their different interlayer interactions from other layered 2D materials.On this basis,this material offers richer and more intriguing physics,including high electron mobility,sizeable bandgap,and remarkable thermal and chemical durability,rendering it an utterly prospective contender for use in advanced electronic and optoelectronic applications.Herein,this article reviews the recent advances related with Bi2O2Se.Initially,its structural characterization,band structure,and basic properties are briefly introduced.Further,the synthetic strategies for the preparation of Bi_(2)O_(2)Se are presented.Furthermore,the diverse applications of Bi2O2Se in the field of electronics and optoelectronics,photocatalytic,solar cells and sensing were summarized in detail.Ultimately,the challenges and future perspectives of Bi2O2Se are included.
基金This paper was financially supported by the National Natural Science Foundation of China(Grant Nos.51975305 and 51905289)the Key Project of Shandong Province,China(Grant No.ZR2020KE027)+2 种基金the Major Research Project of Shandong Province,China(Grant Nos.2019GGX104040 and 2019GSF108236)the Natural Science Foundation of Shandong Province,China(Grant No.ZR2020ME158)the Applied Basic Research Youth Project of Qingdao Science and Technology Plan,China(Grant No.19-6-2-63-cg).
文摘Cutting fluid plays a cooling-lubrication role in the cutting of metal materials.However,the substantial usage of cutting fluid in traditional flood machining seriously pollutes the environment and threatens the health of workers.Environmental machining technologies,such as dry cutting,minimum quantity lubrication(MQL),and cryogenic cooling technology,have been used as substitute for flood machining.However,the insufficient cooling capacity of MQL with normal-temperature compressed gas and the lack of lubricating performance of cryogenic cooling technology limit their industrial application.The technical bottleneck of mechanical-thermal damage of difficult-to-cut materials in aerospace and other fields can be solved by combining cryogenic medium and MQL.The latest progress of cryogenic minimum quantity lubrication(CMQL)technology is reviewed in this paper,and the key scientific issues in the research achievements of CMQL are clarified.First,the application forms and process characteristics of CMQL devices in turning,milling,and grinding are systematically summarized from traditional settings to innovative design.Second,the cooling-lubrication mechanism of CMQL and its influence mechanism on material hardness,cutting force,tool wear,and workpiece surface quality in cutting are extensively revealed.The effects of CMQL are systematically analyzed based on its mechanism and application form.Results show that the application effect of CMQL is better than that of cryogenic technology or MQL alone.Finally,the prospect,which provides basis and support for engineering application and development of CMQL technology,is introduced considering the limitations of CMQL.
基金supported by the National Key R&D Program of China(No.2018YFA0703700,J.H.)the National Natural Science Foundation of China(Nos.91964203,J.H.,62004142,Y.W.,62134001,62104171,R.C.,62104172,L.Y.,62174122,Y.G.and 11774269,S.Y.)+3 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB44000000,J.H.)the Natural Science Foundation of Hubei Province,China(Nos.2021CFB037,R.C.and 2020CFA041,S.Y.)the Fundamental Research Funds for the Central Universities(No.2042021kf0067,R.C.)the Special Fund of Hubei Luojia Laboratory.
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs)with fascinating electronic energy band structures,rich valley physical properties and strong spin–orbit coupling have attracted tremendous interest,and show great potential in electronic,optoelectronic,spintronic and valleytronic fields.Stacking 2D TMDs have provided unprecedented opportunities for constructing artificial functional structures.Due to the low cost,high yield and industrial compatibility,chemical vapor deposition(CVD)is regarded as one of the most promising growth strategies to obtain high-quality and large-area 2D TMDs and heterostructures.Here,state-of-the-art strategies for preparing TMDs details of growth control and related heterostructures construction via CVD method are reviewed and discussed,including wafer-scale synthesis,phase transition,doping,alloy and stacking engineering.Meanwhile,recent progress on the application of multi-functional devices is highlighted based on 2D TMDs.Finally,challenges and prospects are proposed for the practical device applications of 2D TMDs.
基金supported by the National Key R&D Program of China(2022YFA1403700 and 2024YFA1409003)the National Natural Science Foundation of China(12204044,12350401,and 12404056)the Shanghai Science and Technology Innovation Action Plan(24LZ1400800).
文摘The discovery of the quantum Hall effect in the presence of a relatively strong magnetic field has profoundly inspired the study of topological phase of matter[1],[2],[3],which not only deepens our understanding of condensed materials beyond the scope of symmetry breaking but also holds significant promise in device application with low or even vanishing energy dissipation.In principle,since the role of magnetic field can be completely replaced by magnetic ordering,quantum Hall effect and its anomalous counterpart,termed quantum anomalous Hall effect(QAHE),typically appear as complementary pair.
文摘Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications.Here we review recent results on the Raman spectroscopy and imaging of graphene.We show that Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers.The strong Raman signal of single layer graphene compared to graphite is explained by an interference enhancement model.We have also studied the effect of substrates,the top layer deposition,the annealing process,as well as folding(stacking order)on the physical and electronic properties of graphene.Finally,Raman spectroscopy of epitaxial graphene grown on a SiC substrate is presented and strong compressive strain on epitaxial graphene is observed.The results presented here are highly relevant to the application of graphene in nano-electronic devices and help in developing a better understanding of the physical and electronic properties of graphene.
基金National Key Research and Development Program of China,Grant/Award Number:2022YFB3205500National Nature Science Foundation of China,Grant/Award Numbers:61833006,61831011+1 种基金Fundamental Research Funds for the Central UniversitiesMinistry of Education Academic Research Fund Tier 1,Grant/Award Number:A-0009304-00-00。
文摘The fast booming of wearable electronics provides great opportunities for intelligent gas detection with improved healthcare of mining workers,and a variety of gas sensors have been simultaneously developed.However,these sensing systems are always limited to single gas detection and are highly susceptible to the inference of ubiquitous moisture,resulting in less accuracy in the analysis of gas compositions in real mining conditions.To address these challenges,we propose a synergistic strategy based on sensor integration and machine learning algorithms to realize precise NH_(3) and NO_(2) gas detections under real mining conditions.A wearable sensing array based on the graphene and polyaniline composite is developed to largely enhance the sensitivity and selectivity under mixed gas conditions.Further introduction of backpropagation neural network(BP-NN)and partial least squares(PLS)algorithms could improve the accuracy of gas identification and concentration prediction and settle the inference of moisture,realizing over 99%theoretical prediction level on NH_(3) and NO_(2) concentrations within a wide relative humidity range,showing great promise in real mining detection.As proof of concept,a wireless wearable bracelet,integrated with sensing arrays and machine-learning algorithms,is developed for wireless real-time warning of hazardous gases in mines under different humidity conditions.
