IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when ...IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when it is in on- state since the channel of the p- MOSFET is pinched- off.During the course of turning off,the channel of the p- MOSFET will prevent the injection of m inorities and introduce an extra access for the carriers to flow to the anode directly,which m akes the IGBT reach its off- state in a shorter time.The simulation results prove that the new structure can reduce the turn- off time by m ore than75 % compared with the normal one under the same break- down voltage and on- state perform ance.Only two more resistors are needed when using this structure,and the re- quirement of the drive circuits is just the sam e as normal.展开更多
To improve the performance of a metal ion plasma jet in vacuum discharge, an anode-insulated cone-cylinder electrode with insulating sleeve is proposed in this paper. Discharge characteristics and generation character...To improve the performance of a metal ion plasma jet in vacuum discharge, an anode-insulated cone-cylinder electrode with insulating sleeve is proposed in this paper. Discharge characteristics and generation characteristics of plasma of the electrode are investigated, effects of diameter of insulating sleeve, variety of cathode material and length of the insulating sleeve on characteristics of metal ion plasma jet are discussed. Results indicate that a directional and steady plasma jet is formed by using the novel electrode with insulating sleeve under high vacuum conditions. Moreover, the properties of metal ion plasma jet are improved by using the aluminum cathode and thin and long insulating sleeve. The study provides strong support for research of vacuum metal ion plasma thruster and ion implantation technology.展开更多
文摘IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when it is in on- state since the channel of the p- MOSFET is pinched- off.During the course of turning off,the channel of the p- MOSFET will prevent the injection of m inorities and introduce an extra access for the carriers to flow to the anode directly,which m akes the IGBT reach its off- state in a shorter time.The simulation results prove that the new structure can reduce the turn- off time by m ore than75 % compared with the normal one under the same break- down voltage and on- state perform ance.Only two more resistors are needed when using this structure,and the re- quirement of the drive circuits is just the sam e as normal.
基金supported by National Natural Science Foundation of China(No.51577011)
文摘To improve the performance of a metal ion plasma jet in vacuum discharge, an anode-insulated cone-cylinder electrode with insulating sleeve is proposed in this paper. Discharge characteristics and generation characteristics of plasma of the electrode are investigated, effects of diameter of insulating sleeve, variety of cathode material and length of the insulating sleeve on characteristics of metal ion plasma jet are discussed. Results indicate that a directional and steady plasma jet is formed by using the novel electrode with insulating sleeve under high vacuum conditions. Moreover, the properties of metal ion plasma jet are improved by using the aluminum cathode and thin and long insulating sleeve. The study provides strong support for research of vacuum metal ion plasma thruster and ion implantation technology.
